2026 Weimin Chen: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	51	9773	9436	107	99	645	12513

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Materials Science

9773

9436

107

645

12513

Overview

Weimin Chen is affiliated with Linköping University in Sweden. Their research primarily focuses on engineering and materials science, with significant contributions in subfields such as materials chemistry, electrical and electronic engineering, atomic and molecular physics and optics, biomedical engineering, and civil and structural engineering.

The scientist's work extensively covers topics including perovskite materials and applications, nanowire synthesis and applications, semiconductor quantum structures and devices, crystallization and solubility studies, X-ray diffraction in crystallography, organic electronics and photovoltaics, as well as conducting polymers and their applications.

Recent publications by Weimin Chen demonstrate a broad scope in materials science and applied physics. Notable papers include:

"Ion-modulated radical doping of spiro-OMeTAD for more efficient and stable perovskite solar cells," 2022, Science
"A high-conductivity n-type polymeric ink for printed electronics," 2021, Nature Communications
"Ground-state electron transfer in all-polymer donor-acceptor heterojunctions," 2020, Nature Materials
"Magnetizing lead-free halide double perovskites," 2020, Science Advances
"Near-Infrared Light-Responsive Cu-Doped Cs₂AgBiBr₆," 2020, Advanced Functional Materials

The scientist collaborates frequently with several researchers in their field. Frequent co-authors include:

I. A. Buyanova
Mattias Jansson
Yuttapoom Puttisong
Mats Fahlman
Fumitaro Ishikawa

Weimin Chen's research has appeared across numerous scientific venues. The most common publication platforms include:

The Cambridge Structural Database
Nature Communications
SSRN Electronic Journal
Applied Physics Letters
Scientific Reports

Best Publications

Semi-metallic polymers

Olga Bubnova;Zia Ullah Khan;Hui Wang;Slawomir Braun

923
Citations
Design rules for minimizing voltage losses in high-efficiency organic solar cells.

Deping Qian;Zilong Zheng;Huifeng Yao;Wolfgang Tress

912
Citations
Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy

I. A. Buyanova;W. M. Chen;G. Pozina;J. P. Bergman

324
Citations
Silicon vacancy related defect in 4H and 6H SiC

E. Sörman;N. T. Son;W. M. Chen;O. Kordina

304
Citations
Local spectroscopy of a Kondo impurity: Co on Au(111)

V. Madhavan;V. Madhavan;W. Chen;W. Chen;T. Jamneala;T. Jamneala;M. F. Crommie;M. F. Crommie

254
Citations
Direct determination of electron effective mass in GaNAs/GaAs quantum wells

P. N. Hai;Weimin Chen;Irina Buyanova;H. P. Xin

238
Citations
Electronic Properties of Ga(In)NAs Alloys

Irina Buyanova;Weimin Chen;Bo Monemar

237
Citations
A high-conductivity n-type polymeric ink for printed electronics.

Chi Yuan Yang;Marc Antoine Stoeckel;Tero Petri Ruoko;Han Yan Wu

231
Citations
Wide bandgap GaN-based semiconductors for spintronics

SJ Pearton;CR Abernathy;GT Thaler;RM Frazier

194
Citations
Mechanism responsible for the semi‐insulating properties of low‐temperature‐grown GaAs

X. Liu;A. Prasad;W. M. Chen;A. Kurpiewski

193
Citations
ZnO Doped With Transition Metal Ions

S.J. Pearton;D.P. Norton;M.P. Mil;A.F. Hebard

189
Citations
Oxygen and zinc vacancies in as-grown ZnO single crystals

Xingjun Wang;Leonid Vlasenko;S J Pearton;Weimin Chen

171
Citations
Electron effective masses in 4H SiC

N. T. Son;W. M. Chen;O. Kordina;A. O. Konstantinov

160
Citations
Ground-state electron transfer in all-polymer donor-acceptor heterojunctions

Kai Xu;Hengda Sun;Tero-Petri Ruoko;Gang Wang

143
Citations
Mechanism for rapid thermal annealing improvements in undoped GaNxAs1−x/GaAs structures grown by molecular beam epitaxy

I. A. Buyanova;G. Pozina;P. N. Hai;N. Q. Thinh

138
Citations
Physics and Applications of Dilute Nitrides

Irina A. Buyanova;Weimin M. Chen

135
Citations
Scanning tunneling spectroscopy of transition-metal impurities at the surface of gold

T. Jamneala;T. Jamneala;V. Madhavan;V. Madhavan;W. Chen;W. Chen;M. F. Crommie;M. F. Crommie

132
Citations
Influence of conduction-band nonparabolicity on electron confinement and effective mass in GaNxAs1−x∕GaAs quantum wells

Stanko Tomić;Eoin P. O’Reilly;Peter J. Klar;Heiko Grüning

128
Citations
Electronic structure of the neutral silicon vacancy in 4H and 6H SiC

Matthias Wagner;Björn Magnusson;Weimin Chen;Erik Janzén

123
Citations
ELECTRON EFFECTIVE MASSES AND MOBILITIES IN HIGH-PURITY 6H-SIC CHEMICAL VAPOR DEPOSITION LAYERS

N. T. Son;O. Kordina;A. O. Konstantinov;W. M. Chen

121
Citations
Time-resolved studies of photoluminescence in GaNxP1−x alloys: Evidence for indirect-direct band gap crossover

I. A. Buyanova;G. Pozina;J. P. Bergman;W. M. Chen

114
Citations
ZnO Doped with Transition Metal Ions

Stephen J. Pearton;David P. Norton;Matt P. Ivill;Art F. Hebard

0
Citations