2026 Wolfgang Stolz: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	60	7085	6849	415	402	622	12444

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Materials Science

7085

6849

415

402

622

12444

Overview

Wolfgang Stolz is affiliated with Philipp University of Marburg in Germany and has made contributions in the fields of Engineering as well as Physics and Astronomy. Their research focuses primarily on Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics, with additional work in Spectroscopy, Condensed Matter Physics, and Biomedical Engineering.

The scientist's work covers several main topics, including:

Semiconductor Quantum Structures and Devices
Semiconductor Lasers and Optical Devices
Photonic and Optical Devices
Spectroscopy and Laser Applications
Advanced Semiconductor Detectors and Materials
Advanced Fiber Laser Technologies
Semiconductor materials and devices

Recent publications by Wolfgang Stolz include:

"Signatures of a frequency-modulated comb in a VECSEL," 2021, published in Optica
"Widely Tunable Terahertz-Generating Semiconductor Disk Laser," 2020, published in physica status solidi (RRL) - Rapid Research Letters
"Direct Probe of Room-Temperature Quantum-Tunneling Processes in Type-II Heterostructures Using Terahertz Emission Spectroscopy," 2020, published in Physical Review Applied
"In situ analysis of Bi terminated GaAs (0 0 1) and Ga(As,Bi) surfaces during growth by MOVPE," 2020, published in Applied Surface Science
"Performance characteristics of low threshold current 1.25 μm type-II GaInAs/GaAsSb 'W'-lasers for optical communications," 2021, published in Journal of Physics D Applied Physics

Wolfgang Stolz often collaborates with several researchers, including:

Kerstin Volz
Christian Fuchs
Jannik Lehr
Martín Koch
Dominic A. Duffy

The scientist has published frequently in venues such as:

arXiv (Cornell University)
Physical Review B
Applied Physics Letters
Electronics Letters
Optics Express

Best Publications

GaP-nucleation on exact Si (0 0 1) substrates for III/V device integration

Kerstin Volz;Andreas Beyer;Wiebke Witte;Jens Ohlmann

396
Citations
106 W continuous-wave output power from vertical-external-cavity surface-emitting laser

Bernd Heinen;Tzu-Lin Wang;M. Sparenberg;Andreas Weber

281
Citations
Exciton-LO-phonon quantum kinetics: Evidence of memory effects in bulk GaAs.

L. Bányai;D. B. Tran Thoai;E. Reitsamer;H. Haug

254
Citations
(Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen

P. J. Klar;H. Grüning;J. Koch;S. Schäfer

240
Citations
From N isoelectronic impurities to N-induced bands in the GaNxAs1−x alloy

P. J. Klar;H. Grüning;W. Heimbrodt;J. Koch

215
Citations
Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28 - 1.38 [micro sign]m

F. Hohnsdorf;J. Koch;S. Leu;W. Stolz

205
Citations
Heteroepitaxy of GaP on Si: Correlation of morphology, anti-phase-domain structure and MOVPE growth conditions

I. Németh;B. Kunert;W. Stolz;K. Volz

203
Citations
4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation

Keith G. Wilcox;Anne C. Tropper;Harvey E. Beere;David A. Ritchie

186
Citations
Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser

P. Ludewig;N. Knaub;N. Hossain;S. Reinhard

178
Citations
Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate

S. Liebich;M. Zimprich;A. Beyer;C. Lange

174
Citations
Si (001) surface preparation for the antiphase domain free heteroepitaxial growth of GaP on Si substrate

B. Kunert;I. Németh;S. Reinhard;K. Volz

164
Citations
Disorder mediated biexcitonic beats in semiconductor quantum wells

T. F. Albrecht;K. Bott;T. Meier;A. Schulze

161
Citations
Passively modelocked VECSEL emitting 682 fs pulses with 5.1W of average output power

M. Scheller;T.-L. Wang;B. Kunert;W. Stolz

159
Citations
Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in Ga As 1 − x N x

Francesco Masia;G. Pettinari;A. Polimeni;M. Felici

143
Citations
Direct-band-gap Ga(NAsP)-material system pseudomorphically grown on GaP substrate

B. Kunert;K. Volz;J. Koch;W. Stolz

139
Citations
Optical Coherence in Semiconductors: Strong Emission Mediated by Nondegenerate Interactions.

S. T. Cundiff;M. Koch;W. H. Knox;J. Shah

138
Citations
Room-temperature threshold reduction in vertical-cavity surface-emitting lasers by injection of spin-polarized electrons

J. Rudolph;S. Döhrmann;D. Hägele;M. Oestreich

134
Citations
Optical and structural properties of GaAs grown on (100) Si by molecular‐beam epitaxy

W. Stolz;F. E. G. Guimaraes;K. Ploog

129
Citations
Tunable high-power high-brightness linearly polarized vertical-external-cavity surface-emitting lasers

Li Fan;Mahmoud Fallahi;James T. Murray;Robert Bedford

123
Citations
Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy

O. Rubel;M. Galluppi;S. D. Baranovskii;K. Volz

119
Citations