Wolfgang Stolz

Wolfgang Stolz publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Wolfgang Stolz sits on this spectrum.

Wolfgang Stolz D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Wolfgang Stolz sits on this spectrum.

Overview

Best Publications

• GaP-nucleation on exact Si (0 0 1) substrates for III/V device integration

  Kerstin Volz;Andreas Beyer;Wiebke Witte;Jens Ohlmann

  396
  Citations

• 106 W continuous-wave output power from vertical-external-cavity surface-emitting laser

  Bernd Heinen;Tzu-Lin Wang;M. Sparenberg;Andreas Weber

  281
  Citations

• Exciton-LO-phonon quantum kinetics: Evidence of memory effects in bulk GaAs.

  L. Bányai;D. B. Tran Thoai;E. Reitsamer;H. Haug

  254
  Citations

• (Ga, In)(N, As)-fine structure of the band gap due to nearest-neighbor configurations of the isovalent nitrogen

  P. J. Klar;H. Grüning;J. Koch;S. Schäfer

  240
  Citations

• From N isoelectronic impurities to N-induced bands in the GaNxAs1−x alloy

  P. J. Klar;H. Grüning;W. Heimbrodt;J. Koch

  215
  Citations

• Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28 - 1.38 [micro sign]m

  F. Hohnsdorf;J. Koch;S. Leu;W. Stolz

  205
  Citations

• Heteroepitaxy of GaP on Si: Correlation of morphology, anti-phase-domain structure and MOVPE growth conditions

  I. Németh;B. Kunert;W. Stolz;K. Volz

  203
  Citations

• 4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation

  Keith G. Wilcox;Anne C. Tropper;Harvey E. Beere;David A. Ritchie

  186
  Citations

• Electrical injection Ga(AsBi)/(AlGa)As single quantum well laser

  P. Ludewig;N. Knaub;N. Hossain;S. Reinhard

  178
  Citations

• Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate

  S. Liebich;M. Zimprich;A. Beyer;C. Lange

  174
  Citations

• Si (001) surface preparation for the antiphase domain free heteroepitaxial growth of GaP on Si substrate

  B. Kunert;I. Németh;S. Reinhard;K. Volz

  164
  Citations

• Disorder mediated biexcitonic beats in semiconductor quantum wells

  T. F. Albrecht;K. Bott;T. Meier;A. Schulze

  161
  Citations

• Passively modelocked VECSEL emitting 682 fs pulses with 5.1W of average output power

  M. Scheller;T.-L. Wang;B. Kunert;W. Stolz

  159
  Citations

• Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements in Ga As 1 − x N x

  Francesco Masia;G. Pettinari;A. Polimeni;M. Felici

  143
  Citations

• Direct-band-gap Ga(NAsP)-material system pseudomorphically grown on GaP substrate

  B. Kunert;K. Volz;J. Koch;W. Stolz

  139
  Citations

• Optical Coherence in Semiconductors: Strong Emission Mediated by Nondegenerate Interactions.

  S. T. Cundiff;M. Koch;W. H. Knox;J. Shah

  138
  Citations

• Room-temperature threshold reduction in vertical-cavity surface-emitting lasers by injection of spin-polarized electrons

  J. Rudolph;S. Döhrmann;D. Hägele;M. Oestreich

  134
  Citations

• Optical and structural properties of GaAs grown on (100) Si by molecular‐beam epitaxy

  W. Stolz;F. E. G. Guimaraes;K. Ploog

  129
  Citations

• Tunable high-power high-brightness linearly polarized vertical-external-cavity surface-emitting lasers

  Li Fan;Mahmoud Fallahi;James T. Murray;Robert Bedford

  123
  Citations

• Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy

  O. Rubel;M. Galluppi;S. D. Baranovskii;K. Volz

  119
  Citations