Bernardette Kunert

Best Publications

• GaP-nucleation on exact Si (0 0 1) substrates for III/V device integration

  Kerstin Volz;Andreas Beyer;Wiebke Witte;Jens Ohlmann

  396
  Citations

• 106 W continuous-wave output power from vertical-external-cavity surface-emitting laser

  Bernd Heinen;Tzu-Lin Wang;M. Sparenberg;Andreas Weber

  281
  Citations

• Heteroepitaxy of GaP on Si: Correlation of morphology, anti-phase-domain structure and MOVPE growth conditions

  I. Németh;B. Kunert;W. Stolz;K. Volz

  203
  Citations

• 4.35 kW peak power femtosecond pulse mode-locked VECSEL for supercontinuum generation

  Keith G. Wilcox;Anne C. Tropper;Harvey E. Beere;David A. Ritchie

  186
  Citations

• How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches

  Bernardette Kunert;Yves Mols;Marina Baryshniskova;Niamh Waldron

  165
  Citations

• Si (001) surface preparation for the antiphase domain free heteroepitaxial growth of GaP on Si substrate

  B. Kunert;I. Németh;S. Reinhard;K. Volz

  164
  Citations

• Passively modelocked VECSEL emitting 682 fs pulses with 5.1W of average output power

  M. Scheller;T.-L. Wang;B. Kunert;W. Stolz

  159
  Citations

• Direct-band-gap Ga(NAsP)-material system pseudomorphically grown on GaP substrate

  B. Kunert;K. Volz;J. Koch;W. Stolz

  139
  Citations

• Optical pumped InGaAs/GaAs nano-ridge laser epitaxially grown on a standard 300-mm Si wafer

  Yuting Shi;Zhechao Wang;Joris Van Campenhout;Marianna Pantouvaki

  119
  Citations

• III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate

  B. Kunert;W. Guo;Y. Mols;B. Tian

  117
  Citations

• High-Power Optically Pumped Semiconductor Laser at 1040 nm

  Tsuei-Lian Wang;Yushi Kaneda;J M Yarborough;Jorg Hader

  102
  Citations

• Optimization of annealing conditions of (GaIn)(NAs) for solar cell applications

  K. Volz;D. Lackner;I. Németh;B. Kunert

  89
  Citations

• Quantum design strategy pushes high‐power vertical‐external‐cavity surface‐emitting lasers beyond 100 W

  Tsuei Lian Wang;Bernd Heinen;Jörg Hader;Colm Dineen

  77
  Citations

• Near room temperature electrical injection lasing for dilute nitride Ga(NAsP)/GaP quantum-well structures grown by metal organic vapour phase epitaxy

  B. Kunert;A. Klehr;S. Reinhard;K. Volz

  73
  Citations

• A 23-watt single-frequency vertical-external-cavity surface-emitting laser

  Fan Zhang;Bernd Heinen;Matthias Wichmann;Christoph Möller

  68
  Citations

• MOVPE growth of dilute nitride III/V semiconductors using all liquid metalorganic precursors

  Kerstin Volz;Jörg Koch;Falko Höhnsdorf;Bernardette Kunert

  61
  Citations

• Peculiarities of the photoluminescence of metastable Ga(N,As,P)/GaP quantum well structures

  C. Karcher;K. Jandieri;B. Kunert;R. Fritz

  56
  Citations

• Ways to quantitatively detect antiphase disorder in GaP films grown on Si(0 0 1) by transmission electron microscopy

  I. Németh;B. Kunert;W. Stolz;K. Volz

  52
  Citations

• Heterogeneous Integration on Silicon Photonics

  Owen Marshall;Mark Hsu;Zhechao Wang;Bernardette Kunert

  43
  Citations

• On the Measurement of the Thermal Resistance of Vertical-External-Cavity Surface-Emitting Lasers (VECSELs)

  Bernd Heinen;Fan Zhang;M. Sparenberg;B. Kunert

  42
  Citations