D-Index & Metrics Best Publications
Nadine Collaert

Nadine Collaert

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 50 Citations 9,696 615 World Ranking 1756 National Ranking 39
Materials Science D-index 50 Citations 9,384 582 World Ranking 7029 National Ranking 72

Overview

What is she best known for?

The fields of study she is best known for:

  • Quantum mechanics
  • Semiconductor
  • Electrical engineering

Nadine Collaert spends much of her time researching Optoelectronics, MOSFET, Electrical engineering, Electronic engineering and Transistor. Her research investigates the connection between Optoelectronics and topics such as Voltage that intersect with issues in Figure of merit. The concepts of her MOSFET study are interwoven with issues in NMOS logic, Communication channel, Leakage, PMOS logic and Silicon on insulator.

Her research in Electrical engineering tackles topics such as Quantum tunnelling which are related to areas like Statistical fluctuations, Junction leakage, Quantum dot, Heterojunction and Homojunction. The Electronic engineering study combines topics in areas such as Capacitance, Germanium, Read-write memory and Silicon-germanium. Her Transistor research is multidisciplinary, incorporating elements of Nanoscopic scale and Static random-access memory.

Her most cited work include:

  • Analysis of the parasitic S/D resistance in multiple-gate FETs (311 citations)
  • Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET (259 citations)
  • Transport spectroscopy of a single dopant in a gated silicon nanowire. (209 citations)

What are the main themes of her work throughout her whole career to date?

Her primary areas of study are Optoelectronics, Electrical engineering, MOSFET, Electronic engineering and Transistor. As part of one scientific family, Nadine Collaert deals mainly with the area of Optoelectronics, narrowing it down to issues related to the Logic gate, and often Nanowire. Nadine Collaert studied Electrical engineering and Tin that intersect with Electrode.

Her MOSFET research incorporates elements of Electron mobility, Transconductance, PMOS logic, Threshold voltage and Gate dielectric. Her Electronic engineering research includes themes of Communication channel and Silicon-germanium. Nadine Collaert has included themes like High-κ dielectric and Dielectric in her Metal gate study.

She most often published in these fields:

  • Optoelectronics (66.67%)
  • Electrical engineering (27.36%)
  • MOSFET (25.31%)

What were the highlights of her more recent work (between 2017-2021)?

  • Optoelectronics (66.67%)
  • Transistor (19.34%)
  • Silicon (16.35%)

In recent papers she was focusing on the following fields of study:

Her primary areas of investigation include Optoelectronics, Transistor, Silicon, Logic gate and CMOS. Nadine Collaert has researched Optoelectronics in several fields, including Voltage, NMOS logic and Infrasound. Her Voltage study which covers Figure of merit that intersects with MOSFET.

Her Transistor study combines topics in areas such as Silicon on insulator, Irradiation and Activation energy. Her work on Germanium as part of general Silicon research is often related to Trapping, thus linking different fields of science. The subject of her Logic gate research is within the realm of Electronic engineering.

Between 2017 and 2021, her most popular works were:

  • First Demonstration of Vertically Stacked Gate-All-Around Highly Strained Germanium Nanowire pFETs (21 citations)
  • Non-destructive characterization of extended crystalline defects in confined semiconductor device structures. (16 citations)
  • First Demonstration of 3D stacked Finfets at a 45nm fin pitch and 110nm gate pitch technology on 300mm wafers (11 citations)

In her most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Semiconductor
  • Electron

Nadine Collaert focuses on Optoelectronics, Logic gate, Silicon, Nanowire and NMOS logic. Her Optoelectronics research is multidisciplinary, relying on both Threshold voltage, Voltage and Infrasound. Her research on Infrasound also deals with topics like

  • Gate oxide that intertwine with fields like Quality and Electron mobility,
  • Transistor and related Noise power.

Nadine Collaert interconnects Telecommunications and Random access memory in the investigation of issues within Silicon. Her studies deal with areas such as Leakage, Strain engineering, Spectroscopy and Germanium as well as Nanowire. Her research in NMOS logic intersects with topics in PMOS logic, Metal gate and Reliability.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Analysis of the parasitic S/D resistance in multiple-gate FETs

A. Dixit;A. Kottantharayil;N. Collaert;M. Goodwin.
IEEE Transactions on Electron Devices (2005)

423 Citations

Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

G P Lansbergen;R Rahman;C J Wellard;I Woo.
Nature Physics (2008)

414 Citations

Transport spectroscopy of a single dopant in a gated silicon nanowire.

H. Sellier;G. P. Lansbergen;J. Caro;S. Rogge.
Physical Review Letters (2006)

325 Citations

Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification

B. Kaczer;V. Arkhipov;R. Degraeve;N. Collaert.
international reliability physics symposium (2005)

206 Citations

Integrated semiconductor fin device and a method for manufacturing such device

Nadine Collaert;Kristin De Meyer.
(2003)

174 Citations

Vertical GAAFETs for the Ultimate CMOS Scaling

Dmitry Yakimets;Geert Eneman;Pieter Schuddinck;Trong Huynh Bao.
IEEE Transactions on Electron Devices (2015)

173 Citations

Planar Bulk MOSFET s Versus FinFETs: An Analog/RF Perspective

V. Subramanian;B. Parvais;J. Borremans;A. Mercha.
IEEE Transactions on Electron Devices (2006)

168 Citations

Fabrication and Analysis of a ${ m Si}/{ m Si}_{0.55}{ m Ge}_{0.45}$ Heterojunction Line Tunnel FET

Amey M. Walke;Anne Vandooren;Rita Rooyackers;Daniele Leonelli.
IEEE Transactions on Electron Devices (2014)

139 Citations

Review of FINFET technology

M. Jurczak;N. Collaert;A. Veloso;T. Hoffmann.
international soi conference (2009)

137 Citations

Multi-gate devices for the 32 nm technology node and beyond

N. Collaert;A. De Keersgieter;A. Dixit;I. Ferain.
Solid-state Electronics (2008)

132 Citations

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