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Nadine Collaert

Nadine Collaert

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
54
Citations
12733
World Ranking
2266
National Ranking
46

Materials Science

D-Index
55
Citations
12639
World Ranking
8519
National Ranking
99

Overview

Nadine Collaert is affiliated with Imec in Belgium and focuses on research primarily in the fields of Engineering and Physics and Astronomy. Their work includes a significant emphasis on Electrical and Electronic Engineering, condensed matter physics, and related subfields such as Atomic and Molecular Physics, and Optics, as well as Biomedical Engineering and Electronic, Optical and Magnetic Materials.

The scientific contributions of Nadine Collaert revolve around semiconductor materials and devices, particularly GaN-based semiconductor devices and materials. They have also contributed to advancements in semiconductor devices and circuit design, radio frequency integrated circuit design, semiconductor quantum structures and devices, nanowire synthesis and applications, and Ga2O3 and related materials.

Frequent collaborators of Nadine Collaert include Bertrand Parvais, Uthayasankaran Peralagu, A. Alian, Eddy Simoen, and João Antônio Martino.

Several publication venues frequently feature Nadine Collaert's research, including:

  • IEEE Transactions on Electron Devices
  • Solid-State Electronics
  • ECS Meeting Abstracts
  • Journal of Integrated Circuits and Systems
  • 2022 International Electron Devices Meeting (IEDM)

Notable recent papers authored by or involving Nadine Collaert include:

  • Low-Frequency Noise Investigation of GaN/AlGaN Metal-Oxide-Semiconductor High-Electron-Mobility Field-Effect Transistor With Different Gate Length and Orientation, 2020, IEEE Transactions on Electron Devices
  • Back Barrier Trapping Induced Resistance Dispersion in GaN HEMT: Mechanism, Modeling, and Solutions, 2022, 2022 International Electron Devices Meeting (IEDM)
  • Analog design with Line-TFET device experimental data: from device to circuit level, 2020, Semiconductor Science and Technology
  • Application of an Sb Surfactant in InGaAs Nano-ridge Engineering on 300 mm Silicon Substrates, 2021, Crystal Growth & Design
  • Surface State Spectrum of AlGaN/AlN/GaN Extracted From Static Equilibrium Electrostatics, 2021, IEEE Transactions on Electron Devices

Best Publications

  • Analysis of the parasitic S/D resistance in multiple-gate FETs

    A. Dixit;A. Kottantharayil;N. Collaert;M. Goodwin

  • Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET

    G P Lansbergen;R Rahman;C J Wellard;I Woo

  • Transport spectroscopy of a single dopant in a gated silicon nanowire.

    H. Sellier;G. P. Lansbergen;J. Caro;S. Rogge

  • Vertical GAAFETs for the Ultimate CMOS Scaling

    Dmitry Yakimets;Geert Eneman;Pieter Schuddinck;Trong Huynh Bao

  • Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification

    B. Kaczer;V. Arkhipov;R. Degraeve;N. Collaert

  • Planar Bulk MOSFET s Versus FinFETs: An Analog/RF Perspective

    V. Subramanian;B. Parvais;J. Borremans;A. Mercha

  • Review of FINFET technology

    M. Jurczak;N. Collaert;A. Veloso;T. Hoffmann

  • Fabrication and Analysis of a ${ m Si}/{ m Si}_{0.55}{ m Ge}_{0.45}$ Heterojunction Line Tunnel FET

    Amey M. Walke;Anne Vandooren;Rita Rooyackers;Daniele Leonelli

  • Integrated semiconductor fin device and a method for manufacturing such device

    Nadine Collaert;Kristin De Meyer

  • Multi-gate devices for the 32 nm technology node and beyond

    N. Collaert;A. De Keersgieter;A. Dixit;I. Ferain

  • Direct Measurement of Top and Sidewall Interface Trap Density in SOI FinFETs

    G. Kapila;B. Kaczer;A. Nackaerts;N. Collaert

  • FinFET analogue characterization from DC to 110 GHz

    Dimitri Lederer;Valeriya Kilchytska;Tamara Rudenko;Nadine Collaert

  • Heteroepitaxy of InP on Si(001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering

    Clement Merckling;Niamh Waldron;Sijia Jiang;W Guo

  • Highly manufacturable FinFETs with sub-10nm fin width and high aspect ratio fabricated with immersion lithography

    M. J. H. van Dal;N. Collaert;G. Doornbos;G. Vellianitis

  • Impact of fin width on digital and analog performances of n-FinFETs

    Vaidyanathan Subramanian;A Mercha;B Parvais;J Loo

  • InGaAs Gate-All-Around Nanowire Devices on 300mm Si Substrates

    Niamh Waldron;Clement Merckling;Lieve Teugels;Patrick Ong

  • A Low-Power Multi-Gate FET CMOS Technology with 13.9ps Inverter Delay, Large-Scale Integrated High Performance Digital Circuits and SRAM

    K. von Arnim;E. Augendre;A.C. Pacha;T. Schulz

  • Single-cell recording and stimulation with a 16k micro-nail electrode array integrated on a 0.18 μm CMOS chip

    Roeland Huys;Dries Braeken;Danny Jans;Andim Stassen

  • An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates

    N. Waldron;C. Merckling;W. Guo;P. Ong

  • Tall triple-gate devices with TiN/HfO/sub 2/ gate stack

    N. Collaert;M. Demand;I. Ferain;J. Lisoni

  • FinFET analog characterization from DC to 110 GHz

    Dimitri Lederer;Valeriya Kilchytska;Tamara Rudenko;N. Collaert

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