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Malgorzata Jurczak

Malgorzata Jurczak

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
66
Citations
15337
World Ranking
1158
National Ranking
25

Materials Science

D-Index
66
Citations
15382
World Ranking
5367
National Ranking
52

Overview

Malgorzata Jurczak is affiliated with Lam Research in Belgium. Their research primarily focuses on engineering, with a particular emphasis on electrical and electronic engineering. The scope of their work includes several interrelated subfields, examining surfaces, coatings, and films.

Their research encompasses multiple topics related to semiconductor science and technology. Key areas include integrated circuits and semiconductor failure analysis, advancements in semiconductor devices and circuit design, semiconductor materials and devices, photolithography techniques, and electron and X-ray spectroscopy techniques.

Malgorzata Jurczak has contributed to the academic community through various publications. Notable recent papers include:

  • On the Variability of the Low-Frequency Noise in UTBOX SOI nMOS-FETs, 2020, published in the Journal of Integrated Circuits and Systems
  • Electrical validation of massive E-beam defect metrology in EUV-patterned interconnects, 2021, presented at Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV
  • Calibration of Multi-Spectral Photosynthetically Active Radiation Sensor, 2025, published in SSRN Electronic Journal

Their work has appeared repeatedly in the following venues:

  • Journal of Integrated Circuits and Systems
  • Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV
  • SSRN Electronic Journal

Frequent collaborators include:

  • Eddy Simoen
  • Maria Glória Caño de Andrade
  • Luciano M. Almeida
  • M. Aoulaiche
  • C. Caillat

Best Publications

  • 10×10nm 2 Hf/HfO x crossbar resistive RAM with excellent performance, reliability and low-energy operation

    B. Govoreanu;G.S. Kar;Y-Y. Chen;V. Paraschiv

  • Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices.

    Umberto Celano;Ludovic Goux;Attilio Belmonte;Karl Opsomer

  • Transport spectroscopy of a single dopant in a gated silicon nanowire.

    H. Sellier;G. P. Lansbergen;J. Caro;S. Rogge

  • High-k dielectrics for future generation memory devices (Invited Paper)

    J. A. Kittl;K. Opsomer;M. Popovici;N. Menou

  • Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

    Yang Yin Chen;L. Goux;S. Clima;B. Govoreanu

  • Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

    Ludovic Goux;Piotr Czarnecki;Yang Yin Chen;Luigi Pantisano

  • Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight

    Sergiu Clima;Dirk Wouters;Christoph Adelmann;Tony Schenk

  • Intrinsic switching variability in HfO 2 RRAM

    A. Fantini;L. Goux;R. Degraeve;D. J. Wouters

  • Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers

    L. Goux;J. G. Lisoni;M. Jurczak;D. J. Wouters

  • Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM

    Yang Yin Chen;B. Govoreanu;L. Goux;R. Degraeve

  • Silicon-on-Nothing (SON)-an innovative process for advanced CMOS

    Unknown

  • Modulation of the Ni FUSI workfunction by Yb doping: from midgap to n-type band-edge

    H.Y. Yu;J.D. Chen;M.F. Li;S.J. Lee

  • Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory

    Umberto Celano;Ludovic Goux;Robin Degraeve;Andrea Fantini

  • Planar Bulk MOSFET s Versus FinFETs: An Analog/RF Perspective

    V. Subramanian;B. Parvais;J. Borremans;A. Mercha

  • Review of FINFET technology

    M. Jurczak;N. Collaert;A. Veloso;T. Hoffmann

  • Impact of Line-Edge Roughness on FinFET Matching Performance

    E.. Baravelli;A.. Dixit;R.. Rooyackers;M.. Jurczak

  • Cellulose Nanofiber Paper as an Ultra Flexible Nonvolatile Memory

    Kazuki Nagashima;Hirotaka Koga;Umberto Celano;Fuwei Zhuge

  • Te-based chalcogenide materials for selector applications.

    A Velea;K Opsomer;Wouter Devulder;Jan Dumortier

  • Multi-gate devices for the 32 nm technology node and beyond

    N. Collaert;A. De Keersgieter;A. Dixit;I. Ferain

  • On the Gradual Unipolar and Bipolar Resistive Switching of TiN\ HfO2\Pt Memory Systems

    Ludovic Goux;Yang Yin Chen;Luigi Pantisano;Xin Peng Wang

  • Impact of LER and Random Dopant Fluctuations on FinFET Matching Performance

    E. Baravelli;M. Jurczak;N. Speciale;K. De Meyer

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