His primary areas of investigation include Optoelectronics, Electronic engineering, Resistive random-access memory, MOSFET and Electrical engineering. His study of Non-volatile memory is a part of Optoelectronics. Malgorzata Jurczak interconnects Node, Silicon-germanium, Wafer and Current in the investigation of issues within Electronic engineering.
The Resistive random-access memory study combines topics in areas such as Condensed matter physics, Hafnium compounds and Protein filament. His research in Protein filament intersects with topics in Electrical conductor, Oxide and Nanotechnology. The concepts of his MOSFET study are interwoven with issues in Electron mobility, NMOS logic, Stress, Time-dependent gate oxide breakdown and Strained silicon.
Malgorzata Jurczak mostly deals with Optoelectronics, Electronic engineering, Electrical engineering, Resistive random-access memory and MOSFET. His work carried out in the field of Optoelectronics brings together such families of science as Transistor and Tin. His Electronic engineering research integrates issues from Electrostatic discharge, Scaling, Current and Reliability.
Much of his study explores Electrical engineering relationship to Quantum tunnelling. In his study, Programmable metallization cell is inextricably linked to Nanotechnology, which falls within the broad field of Resistive random-access memory. His work in MOSFET tackles topics such as NMOS logic which are related to areas like PMOS logic.
His primary areas of study are Resistive random-access memory, Optoelectronics, Nanotechnology, Electronic engineering and Electrical engineering. His Resistive random-access memory research is multidisciplinary, relying on both Resistive touchscreen, Oxide, Tin and Protein filament. Dielectric is the focus of his Optoelectronics research.
The Nanotechnology study combines topics in areas such as Programmable metallization cell, Condensed matter physics and Metal–insulator transition. His research on Electronic engineering also deals with topics like
Malgorzata Jurczak mainly focuses on Resistive random-access memory, Optoelectronics, Nanotechnology, Protein filament and Electrode. His Resistive random-access memory research incorporates themes from Oxide, Silicon, Electronic engineering, Resistive touchscreen and Reliability. Malgorzata Jurczak is interested in Dielectric, which is a field of Optoelectronics.
His work on Layer and Thin film as part of general Nanotechnology research is frequently linked to Replica, bridging the gap between disciplines. In his work, Electrical conductor and Nanoscopic scale is strongly intertwined with Programmable metallization cell, which is a subfield of Protein filament. His study looks at the intersection of Electrode and topics like Tin with Electrode material, Barrier layer and Oxygen scavenger.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
10×10nm 2 Hf/HfO x crossbar resistive RAM with excellent performance, reliability and low-energy operation
B. Govoreanu;G.S. Kar;Y-Y. Chen;V. Paraschiv.
international electron devices meeting (2011)
Analysis of the parasitic S/D resistance in multiple-gate FETs
A. Dixit;A. Kottantharayil;N. Collaert;M. Goodwin.
IEEE Transactions on Electron Devices (2005)
Transport spectroscopy of a single dopant in a gated silicon nanowire.
H. Sellier;G. P. Lansbergen;J. Caro;S. Rogge.
Physical Review Letters (2006)
Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices.
Umberto Celano;Ludovic Goux;Attilio Belmonte;Karl Opsomer.
Nano Letters (2014)
High-k dielectrics for future generation memory devices (Invited Paper)
J. A. Kittl;K. Opsomer;M. Popovici;N. Menou.
Microelectronic Engineering (2009)
Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells
Ludovic Goux;Piotr Czarnecki;Yang Yin Chen;Luigi Pantisano.
Applied Physics Letters (2010)
Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM
Yang Yin Chen;L. Goux;S. Clima;B. Govoreanu.
IEEE Transactions on Electron Devices (2013)
Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers
L. Goux;J. G. Lisoni;M. Jurczak;D. J. Wouters.
Journal of Applied Physics (2010)
Modulation of the Ni FUSI workfunction by Yb doping: from midgap to n-type band-edge
H.Y. Yu;J.D. Chen;M.F. Li;S.J. Lee.
international electron devices meeting (2005)
Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM
Yang Yin Chen;B. Govoreanu;L. Goux;R. Degraeve.
IEEE Transactions on Electron Devices (2012)
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