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Malgorzata Jurczak

Malgorzata Jurczak

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
66
Citations
15337
World Ranking
1158
National Ranking
25

Materials Science

D-Index
66
Citations
15382
World Ranking
5365
National Ranking
52

Malgorzata Jurczak publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Malgorzata Jurczak sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 491 publications — 83rd percentile

83% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Malgorzata Jurczak D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Malgorzata Jurczak sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 66 D-Index — 84th percentile

84% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Malgorzata Jurczak is affiliated with Lam Research in Belgium. Their research primarily focuses on engineering, with a particular emphasis on electrical and electronic engineering. The scope of their work includes several interrelated subfields, examining surfaces, coatings, and films.

Their research encompasses multiple topics related to semiconductor science and technology. Key areas include integrated circuits and semiconductor failure analysis, advancements in semiconductor devices and circuit design, semiconductor materials and devices, photolithography techniques, and electron and X-ray spectroscopy techniques.

Malgorzata Jurczak has contributed to the academic community through various publications. Notable recent papers include:

  • On the Variability of the Low-Frequency Noise in UTBOX SOI nMOS-FETs, 2020, published in the Journal of Integrated Circuits and Systems
  • Electrical validation of massive E-beam defect metrology in EUV-patterned interconnects, 2021, presented at Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV
  • Calibration of Multi-Spectral Photosynthetically Active Radiation Sensor, 2025, published in SSRN Electronic Journal

Their work has appeared repeatedly in the following venues:

  • Journal of Integrated Circuits and Systems
  • Metrology, Inspection, and Process Control for Semiconductor Manufacturing XXXV
  • SSRN Electronic Journal

Frequent collaborators include:

  • Eddy Simoen
  • Maria Glória Caño de Andrade
  • Luciano M. Almeida
  • M. Aoulaiche
  • C. Caillat

Best Publications

  • 10×10nm 2 Hf/HfO x crossbar resistive RAM with excellent performance, reliability and low-energy operation

    B. Govoreanu;G.S. Kar;Y-Y. Chen;V. Paraschiv

  • Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices.

    Umberto Celano;Ludovic Goux;Attilio Belmonte;Karl Opsomer

  • Transport spectroscopy of a single dopant in a gated silicon nanowire.

    H. Sellier;G. P. Lansbergen;J. Caro;S. Rogge

  • High-k dielectrics for future generation memory devices (Invited Paper)

    J. A. Kittl;K. Opsomer;M. Popovici;N. Menou

  • Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

    Yang Yin Chen;L. Goux;S. Clima;B. Govoreanu

  • Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

    Ludovic Goux;Piotr Czarnecki;Yang Yin Chen;Luigi Pantisano

  • Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight

    Sergiu Clima;Dirk Wouters;Christoph Adelmann;Tony Schenk

  • Intrinsic switching variability in HfO 2 RRAM

    A. Fantini;L. Goux;R. Degraeve;D. J. Wouters

  • Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers

    L. Goux;J. G. Lisoni;M. Jurczak;D. J. Wouters

  • Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM

    Yang Yin Chen;B. Govoreanu;L. Goux;R. Degraeve

  • Silicon-on-Nothing (SON)-an innovative process for advanced CMOS

    Unknown

  • Modulation of the Ni FUSI workfunction by Yb doping: from midgap to n-type band-edge

    H.Y. Yu;J.D. Chen;M.F. Li;S.J. Lee

  • Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory

    Umberto Celano;Ludovic Goux;Robin Degraeve;Andrea Fantini

  • Planar Bulk MOSFET s Versus FinFETs: An Analog/RF Perspective

    V. Subramanian;B. Parvais;J. Borremans;A. Mercha

  • Review of FINFET technology

    M. Jurczak;N. Collaert;A. Veloso;T. Hoffmann

  • Impact of Line-Edge Roughness on FinFET Matching Performance

    E.. Baravelli;A.. Dixit;R.. Rooyackers;M.. Jurczak

  • Cellulose Nanofiber Paper as an Ultra Flexible Nonvolatile Memory

    Kazuki Nagashima;Hirotaka Koga;Umberto Celano;Fuwei Zhuge

  • Te-based chalcogenide materials for selector applications.

    A Velea;K Opsomer;Wouter Devulder;Jan Dumortier

  • Multi-gate devices for the 32 nm technology node and beyond

    N. Collaert;A. De Keersgieter;A. Dixit;I. Ferain

  • On the Gradual Unipolar and Bipolar Resistive Switching of TiN\ HfO2\Pt Memory Systems

    Ludovic Goux;Yang Yin Chen;Luigi Pantisano;Xin Peng Wang

  • Impact of LER and Random Dopant Fluctuations on FinFET Matching Performance

    E. Baravelli;M. Jurczak;N. Speciale;K. De Meyer

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Related Online Degrees & Career Pathways

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