D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 53 Citations 9,966 343 World Ranking 1507 National Ranking 680
Materials Science D-index 49 Citations 9,206 318 World Ranking 7295 National Ranking 1956

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Electrical engineering
  • Transistor

His primary areas of investigation include Optoelectronics, Electronic engineering, Resistive random-access memory, MOSFET and Electrical engineering. His study of Non-volatile memory is a part of Optoelectronics. Malgorzata Jurczak interconnects Node, Silicon-germanium, Wafer and Current in the investigation of issues within Electronic engineering.

The Resistive random-access memory study combines topics in areas such as Condensed matter physics, Hafnium compounds and Protein filament. His research in Protein filament intersects with topics in Electrical conductor, Oxide and Nanotechnology. The concepts of his MOSFET study are interwoven with issues in Electron mobility, NMOS logic, Stress, Time-dependent gate oxide breakdown and Strained silicon.

His most cited work include:

  • 10×10nm 2 Hf/HfO x crossbar resistive RAM with excellent performance, reliability and low-energy operation (474 citations)
  • Analysis of the parasitic S/D resistance in multiple-gate FETs (311 citations)
  • Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices. (222 citations)

What are the main themes of his work throughout his whole career to date?

Malgorzata Jurczak mostly deals with Optoelectronics, Electronic engineering, Electrical engineering, Resistive random-access memory and MOSFET. His work carried out in the field of Optoelectronics brings together such families of science as Transistor and Tin. His Electronic engineering research integrates issues from Electrostatic discharge, Scaling, Current and Reliability.

Much of his study explores Electrical engineering relationship to Quantum tunnelling. In his study, Programmable metallization cell is inextricably linked to Nanotechnology, which falls within the broad field of Resistive random-access memory. His work in MOSFET tackles topics such as NMOS logic which are related to areas like PMOS logic.

He most often published in these fields:

  • Optoelectronics (59.45%)
  • Electronic engineering (27.18%)
  • Electrical engineering (26.96%)

What were the highlights of his more recent work (between 2013-2018)?

  • Resistive random-access memory (24.63%)
  • Optoelectronics (59.45%)
  • Nanotechnology (13.38%)

In recent papers he was focusing on the following fields of study:

His primary areas of study are Resistive random-access memory, Optoelectronics, Nanotechnology, Electronic engineering and Electrical engineering. His Resistive random-access memory research is multidisciplinary, relying on both Resistive touchscreen, Oxide, Tin and Protein filament. Dielectric is the focus of his Optoelectronics research.

The Nanotechnology study combines topics in areas such as Programmable metallization cell, Condensed matter physics and Metal–insulator transition. His research on Electronic engineering also deals with topics like

  • Reliability which intersects with area such as CMOS and Scaling,
  • Amorphous silicon that intertwine with fields like Silicon. His work carried out in the field of Electrical engineering brings together such families of science as Random access memory and Quantum tunnelling.

Between 2013 and 2018, his most popular works were:

  • Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices. (222 citations)
  • Imaging the Three-Dimensional Conductive Channel in Filamentary-Based Oxide Resistive Switching Memory (114 citations)
  • Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight (94 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Electrical engineering
  • Integrated circuit

Malgorzata Jurczak mainly focuses on Resistive random-access memory, Optoelectronics, Nanotechnology, Protein filament and Electrode. His Resistive random-access memory research incorporates themes from Oxide, Silicon, Electronic engineering, Resistive touchscreen and Reliability. Malgorzata Jurczak is interested in Dielectric, which is a field of Optoelectronics.

His work on Layer and Thin film as part of general Nanotechnology research is frequently linked to Replica, bridging the gap between disciplines. In his work, Electrical conductor and Nanoscopic scale is strongly intertwined with Programmable metallization cell, which is a subfield of Protein filament. His study looks at the intersection of Electrode and topics like Tin with Electrode material, Barrier layer and Oxygen scavenger.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

10×10nm 2 Hf/HfO x crossbar resistive RAM with excellent performance, reliability and low-energy operation

B. Govoreanu;G.S. Kar;Y-Y. Chen;V. Paraschiv.
international electron devices meeting (2011)

528 Citations

Analysis of the parasitic S/D resistance in multiple-gate FETs

A. Dixit;A. Kottantharayil;N. Collaert;M. Goodwin.
IEEE Transactions on Electron Devices (2005)

423 Citations

Transport spectroscopy of a single dopant in a gated silicon nanowire.

H. Sellier;G. P. Lansbergen;J. Caro;S. Rogge.
Physical Review Letters (2006)

325 Citations

Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices.

Umberto Celano;Ludovic Goux;Attilio Belmonte;Karl Opsomer.
Nano Letters (2014)

310 Citations

High-k dielectrics for future generation memory devices (Invited Paper)

J. A. Kittl;K. Opsomer;M. Popovici;N. Menou.
Microelectronic Engineering (2009)

285 Citations

Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

Ludovic Goux;Piotr Czarnecki;Yang Yin Chen;Luigi Pantisano.
Applied Physics Letters (2010)

284 Citations

Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

Yang Yin Chen;L. Goux;S. Clima;B. Govoreanu.
IEEE Transactions on Electron Devices (2013)

260 Citations

Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers

L. Goux;J. G. Lisoni;M. Jurczak;D. J. Wouters.
Journal of Applied Physics (2010)

220 Citations

Modulation of the Ni FUSI workfunction by Yb doping: from midgap to n-type band-edge

H.Y. Yu;J.D. Chen;M.F. Li;S.J. Lee.
international electron devices meeting (2005)

207 Citations

Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM

Yang Yin Chen;B. Govoreanu;L. Goux;R. Degraeve.
IEEE Transactions on Electron Devices (2012)

198 Citations

If you think any of the details on this page are incorrect, let us know.

Contact us

Best Scientists Citing Malgorzata Jurczak

Eddy Simoen

Eddy Simoen

Ghent University

Publications: 116

Rainer Waser

Rainer Waser

RWTH Aachen University

Publications: 99

Cor Claeys

Cor Claeys

Imec

Publications: 90

Guido Groeseneken

Guido Groeseneken

KU Leuven

Publications: 70

Shimeng Yu

Shimeng Yu

Georgia Institute of Technology

Publications: 67

Nadine Collaert

Nadine Collaert

Imec

Publications: 67

Robin Degraeve

Robin Degraeve

Imec

Publications: 60

Ming Liu

Ming Liu

Chinese Academy of Sciences

Publications: 56

Stephan Menzel

Stephan Menzel

Forschungszentrum Jülich

Publications: 53

Bin Gao

Bin Gao

Xi'an Jiaotong University

Publications: 51

Jinfeng Kang

Jinfeng Kang

Peking University

Publications: 43

Shibing Long

Shibing Long

University of Science and Technology of China

Publications: 43

Daniele Ielmini

Daniele Ielmini

Polytechnic University of Milan

Publications: 42

Hyunsang Hwang

Hyunsang Hwang

Pohang University of Science and Technology

Publications: 42

H.-S. Philip Wong

H.-S. Philip Wong

Stanford University

Publications: 42

Hangbing Lv

Hangbing Lv

Chinese Academy of Sciences

Publications: 40

Trending Scientists

Steven Hand

Steven Hand

Google (United States)

Panos K. Chrysanthis

Panos K. Chrysanthis

University of Pittsburgh

Miroslaw J. Skibniewski

Miroslaw J. Skibniewski

University of Maryland, College Park

Sheng Quan Xie

Sheng Quan Xie

University of Leeds

Philip J. Stephens

Philip J. Stephens

University of Southern California

Lili Lin

Lili Lin

Sichuan University

Stefan Oscarson

Stefan Oscarson

University College Dublin

Niyaz Mohammad Mahmoodi

Niyaz Mohammad Mahmoodi

Institute for Color Science and Technology

Peter B. Hitchcock

Peter B. Hitchcock

University of Sussex

Markus C. Wahl

Markus C. Wahl

Freie Universität Berlin

Patrizia Hrelia

Patrizia Hrelia

University of Bologna

Lupei Zhu

Lupei Zhu

Saint Louis University

Mauro Delorenzi

Mauro Delorenzi

Swiss Institute of Bioinformatics

Per A. Tesch

Per A. Tesch

Karolinska Institute

Paola Escudero

Paola Escudero

University of Sydney

Nu Xu

Nu Xu

Lawrence Berkeley National Laboratory

Something went wrong. Please try again later.