World's Best Scientists 2026 revealed!
Jinfeng Kang

Jinfeng Kang

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
52
Citations
13140
World Ranking
2490
National Ranking
415

Jinfeng Kang publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Jinfeng Kang sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 420 publications — 77th percentile

77% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Jinfeng Kang D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Jinfeng Kang sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 52 D-Index — 64th percentile

64% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Jinfeng Kang is a researcher affiliated with Peking University in China, specializing in engineering with a focus on electrical and electronic engineering. Their work spans multiple subfields including artificial intelligence, materials chemistry, cellular and molecular neuroscience, and aerospace engineering.

The main areas of research for Jinfeng Kang include advanced memory and neural computing, ferroelectric and negative capacitance devices, semiconductor materials and devices, CCD and CMOS imaging sensors, metamaterials and metasurfaces applications, neural networks and reservoir computing, and neuroscience and neural engineering.

Jinfeng Kang has contributed to several peer-reviewed papers published in respected venues. Notable recent publications are:

  • "Bioinspired in-sensor visual adaptation for accurate perception," 2022, Nature Electronics
  • "Optoelectronic graded neurons for bioinspired in-sensor motion perception," 2023, Nature Nanotechnology
  • "Multispectral flexible ultrawideband metamaterial absorbers for radar stealth and visible light transparency," 2022, Optical Materials
  • "Microstructure-based high-quality factor terahertz metamaterial bio-detection sensor," 2023, Advanced Composites and Hybrid Materials
  • "Improvement of State Stability in Multi-Level Resistive Random-Access Memory (RRAM) Array for Neuromorphic Computing," 2021, IEEE Electron Device Letters

The researcher frequently publishes in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Science China Information Sciences, Japanese Journal of Applied Physics, and Advanced Composites and Hybrid Materials.

Prominent coauthors who have collaborated extensively with Jinfeng Kang include Peng Huang, Xiaoyan Liu, Lifeng Liu, Zheng Zhou, and Haozhang Yang.

Best Publications

  • Optoelectronic resistive random access memory for neuromorphic vision sensors.

    Feichi Zhou;Zheng Zhou;Jiewei Chen;Tsz Hin Choy

  • Recommended Methods to Study Resistive Switching Devices

    Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini

  • A Low Energy Oxide‐Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation

    Shimeng Yu;Bin Gao;Zheng Fang;Hongyu Yu

  • HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture.

    Shimeng Yu;Hong Yu Chen;Bin Gao;Jinfeng Kang

  • HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector

    Hong-Yu Chen;Shimeng Yu;Bin Gao;Peng Huang

  • Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

    M. Lanza;K. Zhang;M. Porti;M. Nafría

  • Ionic doping effect in ZrO2 resistive switching memory

    Haowei Zhang;Bin Gao;Bing Sun;Guopeng Chen

  • A neuromorphic visual system using RRAM synaptic devices with Sub-pJ energy and tolerance to variability: Experimental characterization and large-scale modeling

    Shimeng Yu;Bin Gao;Zheng Fang;Hongyu Yu

  • A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations

    Peng Huang;Xiao Yan Liu;Bing Chen;Hai Tong Li

  • Reconfigurable Nonvolatile Logic Operations in Resistance Switching Crossbar Array for Large-Scale Circuits.

    Peng Huang;Jinfeng Kang;Yudi Zhao;Sijie Chen

  • Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

    Bin Gao;Bing Sun;Haowei Zhang;Lifeng Liu

  • Ultra-Low-Energy Three-Dimensional Oxide-Based Electronic Synapses for Implementation of Robust High-Accuracy Neuromorphic Computation Systems

    Bin Gao;Yingjie Bi;Hong Yu Chen;Rui Liu

  • RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study

    Yexin Deng;Peng Huang;Bing Chen;Xiaolin Yang

  • Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach

    Haowei Zhang;Lifeng Liu;Bin Gao;Yuanjun Qiu

  • Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by In Situ TEM Studies

    Chao Li;Bin Gao;Yuan Yao;Xiangxiang Guan

  • Stochastic learning in oxide binary synaptic device for neuromorphic computing

    Shimeng Yu;Shimeng Yu;Bin Gao;Zheng Fang;Hongyu Yu

  • Improved Uniformity of Resistive Switching Behaviors in HfO2 Thin Films with Embedded Al Layers

    Shimeng Yu;Bin Gao;Haibo Dai;Bing Sun

  • Physical mechanisms of endurance degradation in TMO-RRAM

    B. Chen;Y. Lu;B. Gao;Y.H. Fu

  • Fermi pinning-induced thermal instability of metal-gate work functions

    H.Y. Yu;C. Ren;Yee-Chia Yeo;J.F. Kang

  • Oxide-based RRAM switching mechanism: A new ion-transport-recombination model

    B. Gao;S. Yu;N. Xu;L.F. Liu

  • Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention

    N Xu;L F Liu;X Sun;C Chen

Frequent Co-Authors

Bin Gao
Bin Gao Xi'an Jiaotong University
Shimeng Yu
Shimeng Yu Georgia Institute of Technology
H.-S. Philip Wong
H.-S. Philip Wong Stanford University
Dim-Lee Kwong
Dim-Lee Kwong National University of Singapore
Yangyuan Wang
Yangyuan Wang Peking University
Hongyu Yu
Hongyu Yu Southern University of Science and Technology
Huaqiang Wu
Huaqiang Wu Tsinghua University
He Qian
He Qian Tsinghua University
Yoshio Nishi
Yoshio Nishi Stanford University
Guo-Qiang Lo
Guo-Qiang Lo Global Foundries

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