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Jinfeng Kang

Jinfeng Kang

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
52
Citations
13140
World Ranking
2490
National Ranking
414

Overview

Jinfeng Kang is a researcher affiliated with Peking University in China, specializing in engineering with a focus on electrical and electronic engineering. Their work spans multiple subfields including artificial intelligence, materials chemistry, cellular and molecular neuroscience, and aerospace engineering.

The main areas of research for Jinfeng Kang include advanced memory and neural computing, ferroelectric and negative capacitance devices, semiconductor materials and devices, CCD and CMOS imaging sensors, metamaterials and metasurfaces applications, neural networks and reservoir computing, and neuroscience and neural engineering.

Jinfeng Kang has contributed to several peer-reviewed papers published in respected venues. Notable recent publications are:

  • "Bioinspired in-sensor visual adaptation for accurate perception," 2022, Nature Electronics
  • "Optoelectronic graded neurons for bioinspired in-sensor motion perception," 2023, Nature Nanotechnology
  • "Multispectral flexible ultrawideband metamaterial absorbers for radar stealth and visible light transparency," 2022, Optical Materials
  • "Microstructure-based high-quality factor terahertz metamaterial bio-detection sensor," 2023, Advanced Composites and Hybrid Materials
  • "Improvement of State Stability in Multi-Level Resistive Random-Access Memory (RRAM) Array for Neuromorphic Computing," 2021, IEEE Electron Device Letters

The researcher frequently publishes in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Science China Information Sciences, Japanese Journal of Applied Physics, and Advanced Composites and Hybrid Materials.

Prominent coauthors who have collaborated extensively with Jinfeng Kang include Peng Huang, Xiaoyan Liu, Lifeng Liu, Zheng Zhou, and Haozhang Yang.

Best Publications

  • Optoelectronic resistive random access memory for neuromorphic vision sensors.

    Feichi Zhou;Zheng Zhou;Jiewei Chen;Tsz Hin Choy

  • Recommended Methods to Study Resistive Switching Devices

    Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini

  • A Low Energy Oxide‐Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation

    Shimeng Yu;Bin Gao;Zheng Fang;Hongyu Yu

  • HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture.

    Shimeng Yu;Hong Yu Chen;Bin Gao;Jinfeng Kang

  • HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector

    Hong-Yu Chen;Shimeng Yu;Bin Gao;Peng Huang

  • Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

    M. Lanza;K. Zhang;M. Porti;M. Nafría

  • Ionic doping effect in ZrO2 resistive switching memory

    Haowei Zhang;Bin Gao;Bing Sun;Guopeng Chen

  • A neuromorphic visual system using RRAM synaptic devices with Sub-pJ energy and tolerance to variability: Experimental characterization and large-scale modeling

    Shimeng Yu;Bin Gao;Zheng Fang;Hongyu Yu

  • A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations

    Peng Huang;Xiao Yan Liu;Bing Chen;Hai Tong Li

  • Reconfigurable Nonvolatile Logic Operations in Resistance Switching Crossbar Array for Large-Scale Circuits.

    Peng Huang;Jinfeng Kang;Yudi Zhao;Sijie Chen

  • Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

    Bin Gao;Bing Sun;Haowei Zhang;Lifeng Liu

  • Ultra-Low-Energy Three-Dimensional Oxide-Based Electronic Synapses for Implementation of Robust High-Accuracy Neuromorphic Computation Systems

    Bin Gao;Yingjie Bi;Hong Yu Chen;Rui Liu

  • RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study

    Yexin Deng;Peng Huang;Bing Chen;Xiaolin Yang

  • Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach

    Haowei Zhang;Lifeng Liu;Bin Gao;Yuanjun Qiu

  • Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by In Situ TEM Studies

    Chao Li;Bin Gao;Yuan Yao;Xiangxiang Guan

  • Stochastic learning in oxide binary synaptic device for neuromorphic computing

    Shimeng Yu;Shimeng Yu;Bin Gao;Zheng Fang;Hongyu Yu

  • Improved Uniformity of Resistive Switching Behaviors in HfO2 Thin Films with Embedded Al Layers

    Shimeng Yu;Bin Gao;Haibo Dai;Bing Sun

  • Physical mechanisms of endurance degradation in TMO-RRAM

    B. Chen;Y. Lu;B. Gao;Y.H. Fu

  • Fermi pinning-induced thermal instability of metal-gate work functions

    H.Y. Yu;C. Ren;Yee-Chia Yeo;J.F. Kang

  • Oxide-based RRAM switching mechanism: A new ion-transport-recombination model

    B. Gao;S. Yu;N. Xu;L.F. Liu

  • Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention

    N Xu;L F Liu;X Sun;C Chen

Frequent Co-Authors

Bin Gao
Bin Gao Xi'an Jiaotong University
Shimeng Yu
Shimeng Yu Georgia Institute of Technology
H.-S. Philip Wong
H.-S. Philip Wong Stanford University
Dim-Lee Kwong
Dim-Lee Kwong National University of Singapore
Yangyuan Wang
Yangyuan Wang Peking University
Huaqiang Wu
Huaqiang Wu Tsinghua University
He Qian
He Qian Tsinghua University
Mario Lanza
Mario Lanza National University of Singapore
Yoshio Nishi
Yoshio Nishi Stanford University
Guo-Qiang Lo
Guo-Qiang Lo Global Foundries

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