His main research concerns Resistive random-access memory, Optoelectronics, Electronic engineering, Oxide and Tin. His Resistive random-access memory research is multidisciplinary, relying on both Reset, Neuromorphic engineering, Non-volatile memory and Nanotechnology. His Optoelectronics study integrates concerns from other disciplines, such as Electrical conductor, Resistive touchscreen, Electrode and Oxygen ions.
The Electronic engineering study combines topics in areas such as Nonlinear system, Condensed matter physics, Dielectric and Modulation. Jinfeng Kang combines subjects such as Electrical resistance and conductance and Massively parallel with his study of Oxide. His Tin study incorporates themes from Polarization, Stress, Space charge, Operating temperature and Dielectric strength.
Jinfeng Kang mainly investigates Resistive random-access memory, Optoelectronics, Electronic engineering, Electrical engineering and Condensed matter physics. His research in Resistive random-access memory tackles topics such as Resistive switching which are related to areas like Oxygen ions. His Optoelectronics research includes elements of Tin, Electrode, MOSFET and Voltage.
His MOSFET study combines topics in areas such as Threshold voltage and Schottky barrier. His research integrates issues of Energy consumption, Neuromorphic engineering and Reliability in his study of Electronic engineering. In his study, Gate dielectric is inextricably linked to Dielectric, which falls within the broad field of Condensed matter physics.
His primary scientific interests are in Resistive random-access memory, Electronic engineering, Optoelectronics, Artificial neural network and Resistive switching. His study with Resistive random-access memory involves better knowledge in Voltage. His study looks at the intersection of Electronic engineering and topics like Energy consumption with Convolutional neural network.
The study incorporates disciplines such as Layer, Tin, Electrode, Resistive touchscreen and Reliability in addition to Optoelectronics. Jinfeng Kang has researched Resistive switching in several fields, including Hafnium compounds, Random access memory, Computer data storage and Electronics. His study in Oxide is interdisciplinary in nature, drawing from both Characterization and Reset.
His primary areas of investigation include Resistive random-access memory, Optoelectronics, Electronic engineering, Resistive switching and Neuromorphic engineering. His work deals with themes such as Pattern recognition, Artificial intelligence, Pattern recognition, Reading and MNIST database, which intersect with Resistive random-access memory. His work carried out in the field of Optoelectronics brings together such families of science as Layer, Oxide, Thermal stability and Electrode.
His research integrates issues of Artificial neural network, Random access memory, Condensed matter physics and Characterization in his study of Electronic engineering. His research investigates the connection between Resistive switching and topics such as Electronics that intersect with issues in Electronic synapse and Figure of merit. His studies deal with areas such as Image sensor, CMOS and Power consumption as well as Neuromorphic engineering.
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A Low Energy Oxide‐Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation
Shimeng Yu;Bin Gao;Zheng Fang;Hongyu Yu.
Advanced Materials (2013)
Optoelectronic resistive random access memory for neuromorphic vision sensors.
Feichi Zhou;Zheng Zhou;Jiewei Chen;Tsz Hin Choy.
Nature Nanotechnology (2019)
Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories
Nuo Xu;Lifeng Liu;Xiao Sun;Xiaoyan Liu.
Applied Physics Letters (2008)
Recommended Methods to Study Resistive Switching Devices
Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini.
Advanced electronic materials (2019)
HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture.
Shimeng Yu;Hong Yu Chen;Bin Gao;Jinfeng Kang.
ACS Nano (2013)
HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector
Hong-Yu Chen;Shimeng Yu;Bin Gao;Peng Huang.
international electron devices meeting (2012)
Ionic doping effect in ZrO2 resistive switching memory
Haowei Zhang;Bin Gao;Bing Sun;Guopeng Chen.
Applied Physics Letters (2010)
Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory
Bin Gao;Bing Sun;Haowei Zhang;Lifeng Liu.
IEEE Electron Device Letters (2009)
A neuromorphic visual system using RRAM synaptic devices with Sub-pJ energy and tolerance to variability: Experimental characterization and large-scale modeling
Shimeng Yu;Bin Gao;Zheng Fang;Hongyu Yu.
international electron devices meeting (2012)
Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures
M. Lanza;K. Zhang;M. Porti;M. Nafría.
Applied Physics Letters (2012)
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