World's Best Scientists 2026 revealed!
Jinfeng Kang

Jinfeng Kang

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 52 2490 2386 415 413 420 13140

Jinfeng Kang publications per year

The chart shows the history of publications by Jinfeng Kang between 1994 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Jinfeng Kang published across 32 years, from 1994 to 2025, averaging 15.6 papers a year. Output peaked at 40 publications in 2012. 47 of the 500 publications appeared in the last two years.

No. of publications
10 20 30 40
Bar chart. Horizontal axis: year, 1994 to 2025. Vertical axis: number of publications, 0 to 40. Peak 40 publications in 2012. 1994: 1 publication 1995: 2 publications 1996: 1 publication 1997: 4 publications 1998: 4 publications 1999: 2 publications 2000: 2 publications 2001: 5 publications 2002: 2 publications 2003: 8 publications 2004: 17 publications 2005: 13 publications 2006: 15 publications 2007: 7 publications 2008: 32 publications 2009: 21 publications 2010: 21 publications 2011: 26 publications 2012: 40 publications 2013: 34 publications 2014: 29 publications 2015: 24 publications 2016: 19 publications 2017: 22 publications 2018: 17 publications 2019: 25 publications 2020: 10 publications 2021: 14 publications 2022: 13 publications 2023: 23 publications 2024: 18 publications 2025: 29 publications
1994 2025

500 publications in total across all disciplines

View publications per year as a table
Jinfeng Kang: publications per year, 1994 to 2025
Year Publications
1994 1
1995 2
1996 1
1997 4
1998 4
1999 2
2000 2
2001 5
2002 2
2003 8
2004 17
2005 13
2006 15
2007 7
2008 32
2009 21
2010 21
2011 26
2012 40
2013 34
2014 29
2015 24
2016 19
2017 22
2018 17
2019 25
2020 10
2021 14
2022 13
2023 23
2024 18
2025 29
Total 500
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Jinfeng Kang publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Jinfeng Kang sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 414–433 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 420 publications — 77th percentile

77% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169 420
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Jinfeng Kang D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Jinfeng Kang sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 52 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 52 D-Index — 64th percentile

64% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108 52
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Overview

Jinfeng Kang is a researcher affiliated with Peking University in China, specializing in engineering with a focus on electrical and electronic engineering. Their work spans multiple subfields including artificial intelligence, materials chemistry, cellular and molecular neuroscience, and aerospace engineering.

The main areas of research for Jinfeng Kang include advanced memory and neural computing, ferroelectric and negative capacitance devices, semiconductor materials and devices, CCD and CMOS imaging sensors, metamaterials and metasurfaces applications, neural networks and reservoir computing, and neuroscience and neural engineering.

Jinfeng Kang has contributed to several peer-reviewed papers published in respected venues. Notable recent publications are:

  • "Bioinspired in-sensor visual adaptation for accurate perception," 2022, Nature Electronics
  • "Optoelectronic graded neurons for bioinspired in-sensor motion perception," 2023, Nature Nanotechnology
  • "Multispectral flexible ultrawideband metamaterial absorbers for radar stealth and visible light transparency," 2022, Optical Materials
  • "Microstructure-based high-quality factor terahertz metamaterial bio-detection sensor," 2023, Advanced Composites and Hybrid Materials
  • "Improvement of State Stability in Multi-Level Resistive Random-Access Memory (RRAM) Array for Neuromorphic Computing," 2021, IEEE Electron Device Letters

The researcher frequently publishes in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Science China Information Sciences, Japanese Journal of Applied Physics, and Advanced Composites and Hybrid Materials.

Prominent coauthors who have collaborated extensively with Jinfeng Kang include Peng Huang, Xiaoyan Liu, Lifeng Liu, Zheng Zhou, and Haozhang Yang.

Best Publications

  • Optoelectronic resistive random access memory for neuromorphic vision sensors.

    Feichi Zhou;Zheng Zhou;Jiewei Chen;Tsz Hin Choy

  • Recommended Methods to Study Resistive Switching Devices

    Mario Lanza;H.-S. Philip Wong;Eric Pop;Daniele Ielmini

  • A Low Energy Oxide‐Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation

    Shimeng Yu;Bin Gao;Zheng Fang;Hongyu Yu

  • HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture.

    Shimeng Yu;Hong Yu Chen;Bin Gao;Jinfeng Kang

  • HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector

    Hong-Yu Chen;Shimeng Yu;Bin Gao;Peng Huang

  • Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

    M. Lanza;K. Zhang;M. Porti;M. Nafría

  • Ionic doping effect in ZrO2 resistive switching memory

    Haowei Zhang;Bin Gao;Bing Sun;Guopeng Chen

  • A neuromorphic visual system using RRAM synaptic devices with Sub-pJ energy and tolerance to variability: Experimental characterization and large-scale modeling

    Shimeng Yu;Bin Gao;Zheng Fang;Hongyu Yu

  • A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations

    Peng Huang;Xiao Yan Liu;Bing Chen;Hai Tong Li

  • Reconfigurable Nonvolatile Logic Operations in Resistance Switching Crossbar Array for Large-Scale Circuits.

    Peng Huang;Jinfeng Kang;Yudi Zhao;Sijie Chen

  • Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory

    Bin Gao;Bing Sun;Haowei Zhang;Lifeng Liu

  • Ultra-Low-Energy Three-Dimensional Oxide-Based Electronic Synapses for Implementation of Robust High-Accuracy Neuromorphic Computation Systems

    Bin Gao;Yingjie Bi;Hong Yu Chen;Rui Liu

  • RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study

    Yexin Deng;Peng Huang;Bing Chen;Xiaolin Yang

  • Gd-doping effect on performance of HfO2 based resistive switching memory devices using implantation approach

    Haowei Zhang;Lifeng Liu;Bin Gao;Yuanjun Qiu

  • Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by In Situ TEM Studies

    Chao Li;Bin Gao;Yuan Yao;Xiangxiang Guan

  • Stochastic learning in oxide binary synaptic device for neuromorphic computing

    Shimeng Yu;Shimeng Yu;Bin Gao;Zheng Fang;Hongyu Yu

  • Improved Uniformity of Resistive Switching Behaviors in HfO2 Thin Films with Embedded Al Layers

    Shimeng Yu;Bin Gao;Haibo Dai;Bing Sun

  • Physical mechanisms of endurance degradation in TMO-RRAM

    B. Chen;Y. Lu;B. Gao;Y.H. Fu

  • Fermi pinning-induced thermal instability of metal-gate work functions

    H.Y. Yu;C. Ren;Yee-Chia Yeo;J.F. Kang

  • Oxide-based RRAM switching mechanism: A new ion-transport-recombination model

    B. Gao;S. Yu;N. Xu;L.F. Liu

  • Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention

    N Xu;L F Liu;X Sun;C Chen

Frequent Co-Authors

Bin Gao
Bin Gao Xi'an Jiaotong University
Shimeng Yu
Shimeng Yu Georgia Institute of Technology
H.-S. Philip Wong
H.-S. Philip Wong Stanford University
Dim-Lee Kwong
Dim-Lee Kwong National University of Singapore
Yangyuan Wang
Yangyuan Wang Peking University
Hongyu Yu
Hongyu Yu Southern University of Science and Technology
Huaqiang Wu
Huaqiang Wu Tsinghua University
He Qian
He Qian Tsinghua University
Yoshio Nishi
Yoshio Nishi Stanford University
Guo-Qiang Lo
Guo-Qiang Lo Global Foundries

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