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Electronics and Electrical Engineering
Taiwan
2026

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 70 923 881 9 9 493 18235
Materials Science 72 4025 3896 44 43 571 19527

Tseung-Yuen Tseng publications per year

The chart shows the history of publications by Tseung-Yuen Tseng between 1983 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Tseung-Yuen Tseng published across 43 years, from 1983 to 2025, averaging 13.8 papers a year. Output peaked at 30 publications in 2009. 15 of the 594 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 1983 to 2025. Vertical axis: number of publications, 0 to 30. Peak 30 publications in 2009. 1983: 1 publication 1984: 3 publications 1985: 0 publications 1986: 3 publications 1987: 3 publications 1988: 5 publications 1989: 12 publications 1990: 11 publications 1991: 8 publications 1992: 8 publications 1993: 13 publications 1994: 10 publications 1995: 15 publications 1996: 24 publications 1997: 12 publications 1998: 11 publications 1999: 18 publications 2000: 11 publications 2001: 15 publications 2002: 17 publications 2003: 10 publications 2004: 23 publications 2005: 14 publications 2006: 13 publications 2007: 14 publications 2008: 13 publications 2009: 30 publications 2010: 21 publications 2011: 25 publications 2012: 21 publications 2013: 18 publications 2014: 23 publications 2015: 13 publications 2016: 23 publications 2017: 27 publications 2018: 19 publications 2019: 21 publications 2020: 15 publications 2021: 11 publications 2022: 13 publications 2023: 12 publications 2024: 7 publications 2025: 8 publications
1983 2025

594 publications in total across all disciplines

View publications per year as a table
Tseung-Yuen Tseng: publications per year, 1983 to 2025
Year Publications
1983 1
1984 3
1985 0
1986 3
1987 3
1988 5
1989 12
1990 11
1991 8
1992 8
1993 13
1994 10
1995 15
1996 24
1997 12
1998 11
1999 18
2000 11
2001 15
2002 17
2003 10
2004 23
2005 14
2006 13
2007 14
2008 13
2009 30
2010 21
2011 25
2012 21
2013 18
2014 23
2015 13
2016 23
2017 27
2018 19
2019 21
2020 15
2021 11
2022 13
2023 12
2024 7
2025 8
Total 594
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Tseung-Yuen Tseng publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Tseung-Yuen Tseng sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 474–493 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 493 publications — 84th percentile

84% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117 493
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Tseung-Yuen Tseng D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Tseung-Yuen Tseng sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 70 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 70 D-Index — 87th percentile

87% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57 70
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
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Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in Taiwan Leader Award
  • 2025 - Research.com Electronics and Electrical Engineering in Taiwan Leader Award

Overview

Tseung-Yuen Tseng is affiliated with National Yang Ming Chiao Tung University in Taiwan and specializes in research at the intersection of engineering, neuroscience, and materials science. Their scholarly contributions span multiple subfields including electrical and electronic engineering, cellular and molecular neuroscience, polymers and plastics, materials chemistry, and artificial intelligence.

The primary topics of Tseng's research encompass advanced memory and neural computing, neuroscience and neural engineering, photoreceptor and optogenetics research, ferroelectric and negative capacitance devices, transition metal oxide nanomaterials, neural networks and reservoir computing, and supercapacitor materials and fabrication.

Tseng has published extensively in various scientific venues, with frequent appearances in:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • Applied Physics Letters
  • ACS Applied Electronic Materials
  • APL Materials

Recent publications authored or coauthored by Tseng include:

  • Fully Photon Controlled Synaptic Memristor for Neuro-Inspired Computing, 2023, Advanced Electronic Materials
  • Porous carbon materials derived from areca palm leaves for high performance symmetrical solid-state supercapacitors, 2020, Journal of Materials Science
  • High-Performance TiN/Al2O3/ZnO/Al2O3/TiN Flexible RRAM Device With High Bending Condition, 2020, IEEE Transactions on Electron Devices
  • Oxygen Vacancy Transition in HfOx-Based Flexible, Robust, and Synaptic Bi-Layer Memristor for Neuromorphic and Wearable Applications, 2022, Advanced Materials Technologies
  • Transformation of digital to analog switching in TaOx-based memristor device for neuromorphic applications, 2021, Applied Physics Letters

Frequent collaborators include Firman Mangasa Simanjuntak, Debashis Panda, Saransh Shrivastava, Sridhar Chandrasekaran, and Dayanand Kumar. This indicates a consistent partnership across multiple projects and publications.

Best Publications

  • Overview of emerging nonvolatile memory technologies

    Jagan Singh Meena;Simon Min Sze;Umesh Chand;Tseung-Yuen Tseng

  • Effect of Top Electrode Material on Resistive Switching Properties of $\hbox{ZrO}_{2}$ Film Memory Devices

    Chih-Yang Lin;Chen-Yu Wu;Chung-Yi Wu;Tzyh-Cheang Lee

  • Progress in the developments of (Ba,Sr)TiO3 (BST) thin films for Gigabit era DRAMs

    S Ezhilvalavan;Tseung-Yuen Tseng

  • Copper-catalyzed ZnO nanowires on silicon (100) grown by vapor-liquid-solid process

    Seu Yi Li;Chia Ying Lee;Tseung Yuen Tseng

  • Growth, dielectric properties, and memory device applications of ZrO2 thin films

    Debashis Panda;Tseung-Yuen Tseng

  • Characteristics and Electrochemical Performance of Supercapacitors with Manganese Oxide-Carbon Nanotube Nanocomposite Electrodes

    Chia Ying Lee;Huei Mei Tsai;Huey Jan Chuang;Seu Yi Li

  • Field emission and photofluorescent characteristics of zinc oxide nanowires synthesized by a metal catalyzed vapor-liquid-solid process

    Seu Yi Li;Pang Lin;Chia Ying Lee;Tseung Yuen Tseng

  • Status and Prospects of ZnO-Based Resistive Switching Memory Devices

    Firman Mangasa Simanjuntak;Debashis Panda;Kung-Hwa Wei;Tseung-Yuen Tseng

  • Bistable Resistive Switching in Al2O3 Memory Thin Films

    Chih Yang Lin;Chen Yu Wu;Chung Yi Wu;Chen-Ming Hu

  • One-dimensional ZnO nanostructures: fabrication, optoelectronic properties, and device applications

    Debashis Panda;Tseung-Yuen Tseng

  • Preparation of SiO2 Glass from Model Powder Compacts: I, Formation and Characterization of Powders, Suspensions, and Green Compacts

    Michael D. Sacks;Tseung-Yuen Tseng

  • Multilevel resistive switching in Ti/CuxO/Pt memory devices

    Sheng Yu Wang;Chin Wen Huang;Dai Ying Lee;Tseung-Yuen Tseng

  • Effect of oxygen to argon ratio on properties of (Ba,Sr)TiO3 thin films prepared by radio-frequency magnetron sputtering

    M. S. Tsai;S. C. Sun;S. C. Sun;Tseung-Yuen Tseng

  • Electrical Properties of TiO2-K2Ti6O13 Porous Ceramic Humidity Sensor

    Yuan-Chang Yeh;Tseung-Yuen Tseng;De-An Chang

  • Analysis of the d.c. and a.c. properties of K2O-doped porous Ba0.5Sr0.5TiO3 ceramic humidity sensor

    Y. C. Yeh;Tseung-Yuen Tseng

  • Preparation and properties of tantalum pentoxide (Ta2O5) thin films for ultra large scale integrated circuits (ULSIs) application - a review

    S. Ezhilvalavan;Tseung-Yuen Tseng

  • Modified resistive switching behavior of ZrO2 memory films based on the interface layer formed by using Ti top electrode

    Chih Yang Lin;Chung Yi Wu;Chen Yu Wu;Tseung-Yuen Tseng

  • Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress

    Yu Chun Chen;Ting Chang Chang;Hung Wei Li;Shih Ching Chen

  • Device modeling of ferroelectric memory field-effect transistor (FeMFET)

    Hang-Ting Lue;Chien-Jang Wu;Tseung-Yuen Tseng

  • Phase identification and electrical properties in ZnO-glass varistors

    Yih‐Shing ‐S Lee;Tseung-Yuen Tseng

Frequent Co-Authors

Ting-Chang Chang
Ting-Chang Chang National Sun Yat-sen University
Simon M. Sze
Simon M. Sze National Yang Ming Chiao Tung University
Po-Tsun Liu
Po-Tsun Liu National Yang Ming Chiao Tung University
Kung-Hwa Wei
Kung-Hwa Wei National Yang Ming Chiao Tung University
I-Nan Lin
I-Nan Lin Tamkang University
Hang-Ting Lue
Hang-Ting Lue Macronix International (Taiwan)
Wen-Wei Wu
Wen-Wei Wu National Yang Ming Chiao Tung University
Haydn Chen
Haydn Chen University of Macau
Chih-Yuan Lu
Chih-Yuan Lu Macronix International (Taiwan)
Chenming Hu
Chenming Hu University of California, Berkeley

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