World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
45
Citations
8149
World Ranking
11709
National Ranking
144

Wen-Wei Wu publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Wen-Wei Wu sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 233 publications — 41st percentile

41% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Wen-Wei Wu D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Wen-Wei Wu sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 45 D-Index — 10th percentile

10% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Wen-Wei Wu is affiliated with National Yang Ming Chiao Tung University in Taiwan. Their research spans several areas within engineering and materials science, reflecting extensive expertise supported by a substantial number of publications across various subfields.

The primary fields of study include:

  • Engineering
  • Materials Science

Within these broad areas, their work focuses on several subfields, such as:

  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Electronic, Optical and Magnetic Materials
  • Polymers and Plastics
  • Mechanical Engineering

Key research topics addressed in their publications include:

  • Advanced Memory and Neural Computing
  • 2D Materials and Applications
  • Advancements in Battery Materials
  • Ferroelectric and Negative Capacitance Devices
  • Advanced Battery Materials and Technologies
  • Transition Metal Oxide Nanomaterials
  • MXene and MAX Phase Materials

Wen-Wei Wu has contributed articles to a variety of publication venues, with frequent appearances in:

  • SSRN Electronic Journal
  • ECS Meeting Abstracts
  • Advanced Science
  • Advanced Functional Materials
  • Advanced Materials

Their recent papers exemplify the range and focus of their research:

  • A reconfigurable transistor and memory based on a two-dimensional heterostructure and photoinduced trapping, 2023, Nature Electronics
  • Supercritical CO2-Assisted SiOx/Carbon Multi-Layer Coating on Si Anode for Lithium-Ion Batteries, 2021, Advanced Functional Materials
  • Atomic-scale investigation of Lithiation/Delithiation mechanism in High-entropy spinel oxide with superior electrochemical performance, 2021, Chemical Engineering Journal
  • A novel high-performance and energy-efficient RRAM device with multi-functional conducting nanofilaments, 2020, Nano Energy
  • Atomic-Scale Investigation of Electromigration with Different Directions of Electron Flow into High-Density Nanotwinned Copper through In Situ HRTEM, 2021, Acta Materialia

Collaboration is an important feature of their research activities. Wen-Wei Wu frequently coauthors work with:

  • Chun-Wei Huang
  • Chih-Yang Huang
  • Hung-Yang Lo
  • Che-Hung Wang
  • Fang-Chun Shen

Best Publications

  • High Mobility MoS2 Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer

    Jingli Wang;Qian Yao;Chun Wei Huang;Xuming Zou

  • Observation of atomic diffusion at twin-modified grain boundaries in copper

    Kuan Chia Chen;Wen-Wei Wu;Chien Neng Liao;Lih Juann Chen

  • Dynamic evolution of conducting nanofilament in resistive switching memories.

    Jui Yuan Chen;Cheng Lun Hsin;Cheng Lun Hsin;Cheng Lun Hsin;Chun Wei Huang;Chung Hua Chiu

  • Interface Engineering for High‐Performance Top‐Gated MoS2 Field‐Effect Transistors

    Xuming Zou;Jingli Wang;Chung Hua Chiu;Yun Wu

  • Switching Kinetic of VCM‐Based Memristor: Evolution and Positioning of Nanofilament

    Jui-Yuan Chen;Chun-Wei Huang;Chung-Hua Chiu;Yu-Ting Huang

  • Thermal Stability and Performance of NbSiTaTiZr High-Entropy Alloy Barrier for Copper Metallization

    Ming Hung Tsai;Ming Hung Tsai;Chun Wen Wang;Che Wei Tsai;Wan Jui Shen

  • Flexible ferroelectric element based on van der Waals heteroepitaxy

    Jie Jiang;Yugandhar Bitla;Chun Wei Huang;Thi Hien Do

  • In situ Control of Atomic-Scale Si Layer with Huge Strain in the Nanoheterostructure NiSi/Si/NiSi through Point Contact Reaction

    Kuo Chang Lu;Wen-Wei Wu;Han Wei Wu;Carey M. Tanner

  • Single crystalline PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices.

    Yung Chen Lin;Kuo Chang Lu;Wen Wei Wu;Jingwei Bai

  • Van der Waals heteroepitaxial AZO/NiO/AZO/muscovite (ANA/muscovite) transparent flexible memristor

    Van Qui Le;Thi Hien Do;José Ramón Durán Retamal;Pao Wen Shao

  • In-situ TEM observation of repeating events of nucleation in epitaxial growth of nano CoSi2 in nanowires of Si.

    Yi-Chia Chou;Wen-Wei Wu;Shao-Liang Cheng;Bong-Young Yoo

  • Well-aligned ZnO nanowires with excellent field emission and photocatalytic properties

    Fu Hsuan Chu;Chun Wei Huang;Cheng Lun Hsin;Chun Wen Wang

  • Facile synthesis of mesoporous NiFe 2 O 4 /CNTs nanocomposite cathode material for high performance asymmetric pseudocapacitors

    Nagesh Kumar;Amit Kumar;Guan-Min Huang;Wen-Wei Wu

  • Direct Observation of Dual-Filament Switching Behaviors in Ta2O5-Based Memristors

    Chia Fu Chang;Jui Yuan Chen;Chun Wei Huang;Chung Hua Chiu

  • Synthesis of taperlike Si nanowires with strong field emission

    Y. L. Chueh;L. J. Chou;S. L. Cheng;J. H. He

  • Rational Design of ZnO:H/ZnO Bilayer Structure for High-Performance Thin-Film Transistors.

    Ablat Abliz;Chun Wei Huang;Jingli Wang;Lei Xu

  • Supercritical CO2-Assisted SiOx/Carbon Multi-Layer Coating on Si Anode for Lithium-Ion Batteries

    Rahmandhika Firdauzha Hary Hernandha;Purna Chandra Rath;Bharath Umesh;Jagabandhu Patra;Jagabandhu Patra

  • Atomic-scale investigation of Lithiation/Delithiation mechanism in High-entropy spinel oxide with superior electrochemical performance

    Chih Yang Huang;Chun Wei Huang;Min Ci Wu;Jagabandhu Patra

  • Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors.

    Xuming Zou;Chun Wei Huang;Lifeng Wang;Long Jing Yin

  • Homogeneous Nucleation of Epitaxial CoSi2 and NiSi in Si Nanowires

    Yi-Chia Chou;Wen-Wei Wu;Lih Juann Chen;King-Ning Tu

  • Growth of high-density titanium silicide nanowires in a single direction on a silicon surface.

    Hung-Chang Hsu;Wen-Wei Wu;Hsun-Feng Hsu;Lih-Juann Chen

  • Oxide Heteroepitaxy for Flexible Optoelectronics

    Yugandhar Bitla;Ching Chen;Hsien Chang Lee;Thi Hien Do

Frequent Co-Authors

Lih-Juann Chen
Lih-Juann Chen National Tsing Hua University
Ying-Hao Chu
Ying-Hao Chu National Yang Ming Chiao Tung University
Jr-Hau He
Jr-Hau He City University of Hong Kong
King-Ning Tu
King-Ning Tu City University of Hong Kong
Yu-Lun Chueh
Yu-Lun Chueh National Tsing Hua University
Lei Liao
Lei Liao Hunan University
Tseung-Yuen Tseng
Tseung-Yuen Tseng National Yang Ming Chiao Tung University
Changzhong Jiang
Changzhong Jiang Hunan University
Zhong Lin Wang
Zhong Lin Wang Georgia Institute of Technology
Jeng-Kuei Chang
Jeng-Kuei Chang National Yang Ming Chiao Tung University

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