His primary areas of investigation include Optoelectronics, Nanotechnology, Atomic layer deposition, Thin film and Transistor. His work carried out in the field of Optoelectronics brings together such families of science as Voltage, Capacitance and Leakage. His Nanotechnology study integrates concerns from other disciplines, such as Electrochemistry and Chemical engineering.
David Wei Zhang has researched Atomic layer deposition in several fields, including Analytical chemistry, X-ray photoelectron spectroscopy, Integrated circuit and Resistive random-access memory. His work deals with themes such as Phonon scattering, Boltzmann equation, Photoluminescence and Silicene, which intersect with Thin film. His Transistor research incorporates themes from Electronic engineering and Silicon.
David Wei Zhang mostly deals with Optoelectronics, Atomic layer deposition, Analytical chemistry, Transistor and Dielectric. His study in Optoelectronics is interdisciplinary in nature, drawing from both Field-effect transistor, Capacitor, Voltage and Nanotechnology. His Capacitor research incorporates elements of Capacitance and Leakage.
His research in Atomic layer deposition intersects with topics in Chemical engineering, Silicon and Density functional theory. In his study, Passivation is inextricably linked to Annealing, which falls within the broad field of Analytical chemistry. Within one scientific family, David Wei Zhang focuses on topics pertaining to Negative impedance converter under Transistor, and may sometimes address concerns connected to Ferroelectricity.
David Wei Zhang mainly focuses on Optoelectronics, Transistor, Atomic layer deposition, Neuromorphic engineering and Field-effect transistor. David Wei Zhang regularly links together related areas like Voltage in his Optoelectronics studies. His Transistor study incorporates themes from Quantum dot, Artificial neural network, Photodiode and Photoelectric effect.
His Atomic layer deposition study combines topics from a wide range of disciplines, such as Amorphous solid, Nanowire, Heterojunction and Chemical engineering. His Neuromorphic engineering research integrates issues from Memristor, Flexible electronics, Wearable computer, Modulation and Electronics. His Field-effect transistor research includes elements of Low leakage, Gallium arsenide, Transition metal, Integrated circuit and Nb doped.
His scientific interests lie mostly in Optoelectronics, Atomic layer deposition, Heterojunction, Nanowire and Voltage. He interconnects Scanning electron microscopy study, Field-effect transistor, Thin film, Wearable computer and Substrate in the investigation of issues within Optoelectronics. Atomic layer deposition is a subfield of Layer that David Wei Zhang studies.
His Voltage research is multidisciplinary, relying on both Neuromorphic engineering, Memristor and Electronics. David Wei Zhang combines subjects such as Analytical chemistry, X-ray photoelectron spectroscopy, Crystallite, Annealing and Stannate with his study of Amorphous solid. His Transistor study combines topics in areas such as Dielectric, Logic gate and Thin-film transistor.
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Two-dimensional materials for next-generation computing technologies.
Chunsen Liu;Huawei Chen;Shuiyuan Wang;Qi Liu;Qi Liu.
Nature Nanotechnology (2020)
A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications.
Chunsen Liu;Xiao Yan;Xiongfei Song;Shijin Ding.
Nature Nanotechnology (2018)
A MoS 2 /PTCDA Hybrid Heterojunction Synapse with Efficient Photoelectric Dual Modulation and Versatility
Shuiyuan Wang;Chunsheng Chen;Zhihao Yu;Yongli He.
Advanced Materials (2019)
Tunable charge-trap memory based on few-layer MoS2.
Enze Zhang;Weiyi Wang;Cheng Zhang;Yibo Jin.
ACS Nano (2015)
Ultra-low power Hf0.5Zr0.5O2 based ferroelectric tunnel junction synapses for hardware neural network applications
Lin Chen;Tian-Yu Wang;Ya-Wei Dai;Ming-Yang Cha.
Nanoscale (2018)
Design of U-Shape Channel Tunnel FETs With SiGe Source Regions
Wei Wang;Peng-Fei Wang;Chun-Min Zhang;Xi Lin.
IEEE Transactions on Electron Devices (2014)
Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories.
Jun Jiang;Zi Long Bai;Zhi Hui Chen;Long He.
Nature Materials (2018)
Stability and strength of atomically thin borophene from first principles calculations
Bo Peng;Hao Zhang;Hezhu Shao;Zeyu Ning.
Materials research letters (2017)
First-principle calculations of phononic, electronic and optical properties of monolayer arsenene and antimonene allotropes
Yuanfeng Xu;Bo Peng;Hao Zhang;Hezhu Shao.
arXiv: Materials Science (2016)
Ferroelectric HfZrO x Ge and GeSn PMOSFETs with Sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved I ds
Jiuren Zhou;Genquan Han;Qinglong Li;Yue Peng.
international electron devices meeting (2016)
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