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David Wei Zhang

David Wei Zhang

Fudan University
China

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 69 964 922 167 166 504 18406
Materials Science 70 4402 4258 1376 1370 538 18915

David Wei Zhang publications per year

The chart shows the history of publications by David Wei Zhang between 1997 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. David Wei Zhang published across 29 years, from 1997 to 2025, averaging 18.7 papers a year. Output peaked at 61 publications in 2021. 7 of the 542 publications appeared in the last two years.

No. of publications
20 40 60
Bar chart. Horizontal axis: year, 1997 to 2025. Vertical axis: number of publications, 0 to 61. Peak 61 publications in 2021. 1997: 3 publications 1998: 5 publications 1999: 1 publication 2000: 4 publications 2001: 10 publications 2002: 1 publication 2003: 1 publication 2004: 2 publications 2005: 5 publications 2006: 13 publications 2007: 15 publications 2008: 16 publications 2009: 6 publications 2010: 12 publications 2011: 26 publications 2012: 30 publications 2013: 29 publications 2014: 19 publications 2015: 37 publications 2016: 32 publications 2017: 49 publications 2018: 55 publications 2019: 39 publications 2020: 56 publications 2021: 61 publications 2022: 1 publication 2023: 7 publications 2024: 4 publications 2025: 3 publications
1997 2025

542 publications in total across all disciplines

View publications per year as a table
David Wei Zhang: publications per year, 1997 to 2025
Year Publications
1997 3
1998 5
1999 1
2000 4
2001 10
2002 1
2003 1
2004 2
2005 5
2006 13
2007 15
2008 16
2009 6
2010 12
2011 26
2012 30
2013 29
2014 19
2015 37
2016 32
2017 49
2018 55
2019 39
2020 56
2021 61
2022 1
2023 7
2024 4
2025 3
Total 542
Download as CSV

David Wei Zhang publications per year - data summary

  • David Wei Zhang, a Electronics and Electrical Engineering scholar from Fudan University, has 542 publications recorded across 29 years, from 1997 to 2025.
  • The oldest publication on record dates to 1997 and the most recent to 2025.
  • The most productive year is 2021, with 61 publications.
  • The least productive years with any output are 1999, 2002, 2003 and 2022, with 1 publication each.
  • The rate of publication averages 18.7 papers per year over the whole span, or 18.7 per year counting only the 29 years with at least one publication.
  • The last 5 years on the chart (2021-2025) hold 76 publications, 14% of the career total.
  • Split into equal eras - 1997-2006: 45 publications (4.5 per year); 2007-2016: 222 publications (22.2 per year); 2017-2025: 275 publications (30.6 per year).
  • Comparing the opening and closing eras, the overall trend of publication is rising.

David Wei Zhang publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where David Wei Zhang sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 494–513 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 504 publications — 84th percentile

84% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103 504
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
Download as CSV

David Wei Zhang publication distribution in Electronics and Electrical Engineering in 2026 - data summary

  • The chart plots the publication count of all 6,875 Electronics and Electrical Engineering scientists ranked by Research.com in 2026, grouped into 53 ranges running from 34–53 to 1,065+ publications.
  • David Wei Zhang, a Electronics and Electrical Engineering scholar from Fudan University, records 504 publications - the 84th percentile of the discipline.
  • 84% of ranked Electronics and Electrical Engineering scientists score the same or lower than David Wei Zhang, and about 16% score higher.
  • The median of the discipline falls in the 254–273 publications range, and David Wei Zhang ranks above the median.
  • The most crowded range is 174–193 publications, holding 445 scientists (6% of the field).
  • 60% of the field sits in the lowest quarter of the value range (up to 294–313 publications), so the distribution is heavily right-skewed and high scores are rare.
  • The final bar has no upper bound: it groups every scientist with 1,065 publications or more, 99 scientists in all (1% of the field).

David Wei Zhang D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where David Wei Zhang sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 69 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 69 D-Index — 86th percentile

86% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39 69
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

David Wei Zhang D-index placement in Electronics and Electrical Engineering in 2026 - data summary

  • The chart plots the discipline H-index (D-index) of all 6,875 Electronics and Electrical Engineering scientists ranked by Research.com in 2026, grouped into 82 ranges running from 30 to 111+ D-Index.
  • David Wei Zhang, a Electronics and Electrical Engineering scholar from Fudan University, records 69 D-Index - the 86th percentile of the discipline.
  • 86% of ranked Electronics and Electrical Engineering scientists score the same or lower than David Wei Zhang, and about 14% score higher.
  • The median of the discipline falls in the 46 D-Index range, and David Wei Zhang ranks above the median.
  • The most crowded range is 32 D-Index, holding 263 scientists (4% of the field).
  • 60% of the field sits in the lowest quarter of the value range (up to 50 D-Index), so the distribution is heavily right-skewed and high scores are rare.
  • The final bar has no upper bound: it groups every scientist with 111 D-Index or more, 96 scientists in all (1% of the field).

Overview

David Wei Zhang is affiliated with Fudan University in China, focusing on research in the fields of Engineering and Materials Science. Their work primarily addresses Electrical and Electronic Engineering, Materials Chemistry, Biomedical Engineering, Cellular and Molecular Neuroscience, and Bioengineering.

The research topics covered by David Wei Zhang include:

  • Advanced Memory and Neural Computing
  • 2D Materials and Applications
  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • Graphene research and applications
  • Photoreceptor and optogenetics research
  • Perovskite Materials and Applications

Several recent papers authored or co-authored by David Wei Zhang illustrate the scope of their work:

  • Fabrication of a Micro-Electromechanical System-Based Acetone Gas Sensor Using CeO2 Nanodot-Decorated WO3 Nanowires, 2020, ACS Applied Materials & Interfaces
  • Logic gates based on neuristors made from two-dimensional materials, 2021, Nature Electronics
  • Precise preparation of WO3@SnO2 core shell nanosheets for efficient NH3 gas sensing, 2020, Journal of Colloid and Interface Science
  • Ferroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers, 2020, Nature Materials
  • A Steep-Slope MoS2/Graphene Dirac-Source Field-Effect Transistor with a Large Drive Current, 2021, Nano Letters

David Wei Zhang frequently publishes in several scientific venues, which include:

  • Advanced Electronic Materials
  • Nano Letters
  • Optics Express
  • Nanophotonics
  • IEEE Electron Device Letters

The scientist collaborates regularly with colleagues, including:

  • Lin Chen
  • Qingqing Sun
  • Peng Zhou
  • Hao Zhu
  • Tianyu Wang

Best Publications

  • Two-dimensional materials for next-generation computing technologies.

    Chunsen Liu;Huawei Chen;Shuiyuan Wang;Qi Liu;Qi Liu

  • A MoS 2 /PTCDA Hybrid Heterojunction Synapse with Efficient Photoelectric Dual Modulation and Versatility

    Shuiyuan Wang;Chunsheng Chen;Zhihao Yu;Yongli He

  • A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications.

    Chunsen Liu;Xiao Yan;Xiongfei Song;Shijin Ding

  • Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing.

    Shuiyuan Wang;Lan Liu;Lurong Gan;Huawei Chen

  • Tunable charge-trap memory based on few-layer MoS2.

    Enze Zhang;Weiyi Wang;Cheng Zhang;Yibo Jin

  • Ultra-low power Hf0.5Zr0.5O2 based ferroelectric tunnel junction synapses for hardware neural network applications

    Lin Chen;Tian-Yu Wang;Ya-Wei Dai;Ming-Yang Cha

  • Evolution of the band-gap and optical properties of graphene oxide with controllable reduction level

    Yan Shen;Songbo Yang;Peng Zhou;Qingqing Sun

  • Ultrafast non-volatile flash memory based on van der Waals heterostructures

    Lan Liu;Yi Ding;Jiayi Li;Chunsen Liu

  • Small footprint transistor architecture for photoswitching logic and in situ memory.

    Chunsen Liu;Huawei Chen;Xiang Hou;Heng Zhang

  • Stability and Strength of Atomically Thin Borophene from First Principles Calculations

    Bo Peng;Hao Zhang;Hezhu Shao;Zeyu Ning

  • Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories.

    Jun Jiang;Zi Long Bai;Zhi Hui Chen;Long He

  • Stability and strength of atomically thin borophene from first principles calculations

    Bo Peng;Hao Zhang;Hezhu Shao;Zeyu Ning

  • Tunable SnSe2 /WSe2 Heterostructure Tunneling Field Effect Transistor.

    Xiao Yan;Chunsen Liu;Chao Li;Wenzhong Bao

  • Ultrafast non-volatile flash memory based on van der Waals heterostructures.

    Lan Liu;Lan Liu;Chunsen Liu;Lilai Jiang;Jiayi Li

  • Design of U-Shape Channel Tunnel FETs With SiGe Source Regions

    Wei Wang;Peng-Fei Wang;Chun-Min Zhang;Xi Lin

  • Fabrication of a Micro-Electromechanical System-Based Acetone Gas Sensor Using CeO2 Nanodot-Decorated WO3 Nanowires

    Kaiping Yuan;Cheng-Yu Wang;Li-Yuan Zhu;Qi Cao

  • Three-Dimensional Nanoscale Flexible Memristor Networks with Ultralow Power for Information Transmission and Processing Application

    Tian-Yu Wang;Jia-Lin Meng;Ming-Yi Rao;Zhen-Yu He

  • First-principle calculations of phononic, electronic and optical properties of monolayer arsenene and antimonene allotropes

    Yuanfeng Xu;Bo Peng;Hao Zhang;Hezhu Shao

  • Advance on flexible pressure sensors based on metal and carbonaceous nanomaterial

    Meng-Yang Liu;Cheng-Zhou Hang;Xue-Feng Zhao;Xue-Feng Zhao;Li-Yuan Zhu

  • Highly stretchable and self-healing strain sensors for motion detection in wireless human-machine interface

    Cheng-Zhou Hang;Xue-Feng Zhao;Xue-Feng Zhao;Song-Yan Xi;Ying-Hui Shang

  • Ferroelectric HfZrO x Ge and GeSn PMOSFETs with Sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved I ds

    Jiuren Zhou;Genquan Han;Qinglong Li;Yue Peng

Frequent Co-Authors

Shi-Jin Ding
Shi-Jin Ding Fudan University
Peng Zhou
Peng Zhou Fudan University
Hong-Liang Lu
Hong-Liang Lu Fudan University
Wenzhong Bao
Wenzhong Bao Fudan University
Wei Huang
Wei Huang Northwestern Polytechnical University
Genquan Han
Genquan Han Xidian University
Hao Liu
Hao Liu University of Technology Sydney
Tao Wang
Tao Wang Hong Kong Polytechnic University
Jianlu Wang
Jianlu Wang Fudan University
Jincheng Zhang
Jincheng Zhang Xidian University

External Links

Personal website of David Wei Zhang Google Scholar page

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Best Scientists Citing David Wei Zhang

Su-Ting Han

Su-Ting Han

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Publications: 37

Ye Zhou

Ye Zhou

Shenzhen University

Publications: 34

Shi-Jin Ding

Shi-Jin Ding

Fudan University

Publications: 30

Kenji Watanabe

Kenji Watanabe

National Institute for Materials Science

Publications: 29

Takashi Taniguchi

Takashi Taniguchi

National Institute for Materials Science

Publications: 25

Long Qing Chen

Long Qing Chen

Pennsylvania State University

Publications: 20

Peng Zhou

Peng Zhou

Fudan University

Publications: 20

Ming Liu

Ming Liu

Fudan University

Publications: 19

Hong-Liang Lu

Hong-Liang Lu

Fudan University

Publications: 18

Peide D. Ye

Peide D. Ye

Purdue University West Lafayette

Publications: 16

Genquan Han

Genquan Han

Xidian University

Publications: 15

Weida Hu

Weida Hu

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Publications: 15

H.J. Osten

H.J. Osten

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Publications: 14

Georg S. Duesberg

Georg S. Duesberg

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