World's Best Scientists 2026 revealed!
David Wei Zhang

David Wei Zhang

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
69
Citations
18406
World Ranking
964
National Ranking
166

Materials Science

D-Index
70
Citations
18915
World Ranking
4404
National Ranking
1375

Overview

David Wei Zhang is affiliated with Fudan University in China, focusing on research in the fields of Engineering and Materials Science. Their work primarily addresses Electrical and Electronic Engineering, Materials Chemistry, Biomedical Engineering, Cellular and Molecular Neuroscience, and Bioengineering.

The research topics covered by David Wei Zhang include:

  • Advanced Memory and Neural Computing
  • 2D Materials and Applications
  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • Graphene research and applications
  • Photoreceptor and optogenetics research
  • Perovskite Materials and Applications

Several recent papers authored or co-authored by David Wei Zhang illustrate the scope of their work:

  • Fabrication of a Micro-Electromechanical System-Based Acetone Gas Sensor Using CeO2 Nanodot-Decorated WO3 Nanowires, 2020, ACS Applied Materials & Interfaces
  • Logic gates based on neuristors made from two-dimensional materials, 2021, Nature Electronics
  • Precise preparation of WO3@SnO2 core shell nanosheets for efficient NH3 gas sensing, 2020, Journal of Colloid and Interface Science
  • Ferroelectric domain wall memory with embedded selector realized in LiNbO3 single crystals integrated on Si wafers, 2020, Nature Materials
  • A Steep-Slope MoS2/Graphene Dirac-Source Field-Effect Transistor with a Large Drive Current, 2021, Nano Letters

David Wei Zhang frequently publishes in several scientific venues, which include:

  • Advanced Electronic Materials
  • Nano Letters
  • Optics Express
  • Nanophotonics
  • IEEE Electron Device Letters

The scientist collaborates regularly with colleagues, including:

  • Lin Chen
  • Qingqing Sun
  • Peng Zhou
  • Hao Zhu
  • Tianyu Wang

Best Publications

  • Two-dimensional materials for next-generation computing technologies.

    Chunsen Liu;Huawei Chen;Shuiyuan Wang;Qi Liu;Qi Liu

  • A MoS 2 /PTCDA Hybrid Heterojunction Synapse with Efficient Photoelectric Dual Modulation and Versatility

    Shuiyuan Wang;Chunsheng Chen;Zhihao Yu;Yongli He

  • A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications.

    Chunsen Liu;Xiao Yan;Xiongfei Song;Shijin Ding

  • Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing.

    Shuiyuan Wang;Lan Liu;Lurong Gan;Huawei Chen

  • Tunable charge-trap memory based on few-layer MoS2.

    Enze Zhang;Weiyi Wang;Cheng Zhang;Yibo Jin

  • Ultra-low power Hf0.5Zr0.5O2 based ferroelectric tunnel junction synapses for hardware neural network applications

    Lin Chen;Tian-Yu Wang;Ya-Wei Dai;Ming-Yang Cha

  • Evolution of the band-gap and optical properties of graphene oxide with controllable reduction level

    Yan Shen;Songbo Yang;Peng Zhou;Qingqing Sun

  • Ultrafast non-volatile flash memory based on van der Waals heterostructures

    Lan Liu;Yi Ding;Jiayi Li;Chunsen Liu

  • Small footprint transistor architecture for photoswitching logic and in situ memory.

    Chunsen Liu;Huawei Chen;Xiang Hou;Heng Zhang

  • Stability and Strength of Atomically Thin Borophene from First Principles Calculations

    Bo Peng;Hao Zhang;Hezhu Shao;Zeyu Ning

  • Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories.

    Jun Jiang;Zi Long Bai;Zhi Hui Chen;Long He

  • Stability and strength of atomically thin borophene from first principles calculations

    Bo Peng;Hao Zhang;Hezhu Shao;Zeyu Ning

  • Tunable SnSe2 /WSe2 Heterostructure Tunneling Field Effect Transistor.

    Xiao Yan;Chunsen Liu;Chao Li;Wenzhong Bao

  • Ultrafast non-volatile flash memory based on van der Waals heterostructures.

    Lan Liu;Lan Liu;Chunsen Liu;Lilai Jiang;Jiayi Li

  • Design of U-Shape Channel Tunnel FETs With SiGe Source Regions

    Wei Wang;Peng-Fei Wang;Chun-Min Zhang;Xi Lin

  • Fabrication of a Micro-Electromechanical System-Based Acetone Gas Sensor Using CeO2 Nanodot-Decorated WO3 Nanowires

    Kaiping Yuan;Cheng-Yu Wang;Li-Yuan Zhu;Qi Cao

  • Three-Dimensional Nanoscale Flexible Memristor Networks with Ultralow Power for Information Transmission and Processing Application

    Tian-Yu Wang;Jia-Lin Meng;Ming-Yi Rao;Zhen-Yu He

  • First-principle calculations of phononic, electronic and optical properties of monolayer arsenene and antimonene allotropes

    Yuanfeng Xu;Bo Peng;Hao Zhang;Hezhu Shao

  • Advance on flexible pressure sensors based on metal and carbonaceous nanomaterial

    Meng-Yang Liu;Cheng-Zhou Hang;Xue-Feng Zhao;Xue-Feng Zhao;Li-Yuan Zhu

  • Highly stretchable and self-healing strain sensors for motion detection in wireless human-machine interface

    Cheng-Zhou Hang;Xue-Feng Zhao;Xue-Feng Zhao;Song-Yan Xi;Ying-Hui Shang

  • Ferroelectric HfZrO x Ge and GeSn PMOSFETs with Sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved I ds

    Jiuren Zhou;Genquan Han;Qinglong Li;Yue Peng

Frequent Co-Authors

Shi-Jin Ding
Shi-Jin Ding Fudan University
Peng Zhou
Peng Zhou Fudan University
Hong-Liang Lu
Hong-Liang Lu Fudan University
Wenzhong Bao
Wenzhong Bao Fudan University
Wei Huang
Wei Huang Northwestern Polytechnical University
Genquan Han
Genquan Han Xidian University
Hao Liu
Hao Liu University of Technology Sydney
Tao Wang
Tao Wang Hong Kong Polytechnic University
Jianlu Wang
Jianlu Wang Fudan University
Jincheng Zhang
Jincheng Zhang Xidian University

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