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Shi-Jin Ding

Shi-Jin Ding

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
42
Citations
7659
World Ranking
4087
National Ranking
625

Overview

Shi-Jin Ding is affiliated with Fudan University in China, with significant contributions to the fields of engineering and materials science. Their research primarily focuses on electrical and electronic engineering as well as materials chemistry, with additional work in polymers and plastics, electronic, optical, and magnetic materials, and biomedical engineering.

The scientist has published extensively in several research topics, including:

  • Semiconductor materials and devices
  • Ferroelectric and Negative Capacitance Devices
  • Advanced Memory and Neural Computing
  • Thin-Film Transistor Technologies
  • ZnO doping and properties
  • Transition Metal Oxide Nanomaterials
  • MXene and MAX Phase Materials

Ding's frequent collaborators include:

  • Xiaohan Wu
  • Wen-Jun Liu
  • David Wei Zhang
  • Lin Chen
  • Hao Zhu

They have contributed to numerous publications in key academic venues, such as:

  • IEEE Transactions on Electron Devices
  • ACS Applied Materials & Interfaces
  • arXiv (Cornell University)
  • SSRN Electronic Journal
  • ACS Applied Electronic Materials

Among recent notable papers are:

  • Three-Dimensional Nanoscale Flexible Memristor Networks with Ultralow Power for Information Transmission and Processing Application, 2020, Nano Letters
  • Ultralow Power Wearable Heterosynapse with Photoelectric Synergistic Modulation, 2020, Advanced Science
  • Flexible boron nitride-based memristor for in situ digital and analogue neuromorphic computing applications, 2021, Materials Horizons
  • Flexible 3D memristor array for binary storage and multi-states neuromorphic computing applications, 2020, InfoMat
  • Energy-efficient flexible photoelectric device with 2D/0D hybrid structure for bio-inspired artificial heterosynapse application, 2021, Nano Energy

Shi-Jin Ding's work spans across engineering and materials science, with a strong emphasis on developing advanced memory and neuromorphic computing technologies. Their research has addressed the design and application of flexible memristor networks and photoelectric devices, highlighting interests in ultralow-power systems and bio-inspired computing architectures.

Best Publications

  • A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications.

    Chunsen Liu;Xiao Yan;Xiongfei Song;Shijin Ding

  • Ultra-low power Hf0.5Zr0.5O2 based ferroelectric tunnel junction synapses for hardware neural network applications

    Lin Chen;Tian-Yu Wang;Ya-Wei Dai;Ming-Yang Cha

  • Evolution of the band-gap and optical properties of graphene oxide with controllable reduction level

    Yan Shen;Songbo Yang;Peng Zhou;Qingqing Sun

  • Tunable SnSe2 /WSe2 Heterostructure Tunneling Field Effect Transistor.

    Xiao Yan;Chunsen Liu;Chao Li;Wenzhong Bao

  • Three-Dimensional Nanoscale Flexible Memristor Networks with Ultralow Power for Information Transmission and Processing Application

    Tian-Yu Wang;Jia-Lin Meng;Ming-Yi Rao;Zhen-Yu He

  • Ultralow Power Wearable Heterosynapse with Photoelectric Synergistic Modulation.

    Tian-Yu Wang;Jia-Lin Meng;Zhen-Yu He;Lin Chen

  • Improvement of voltage linearity in high-/spl kappa/ MIM capacitors using HfO/sub 2/-SiO/sub 2/ stacked dielectric

    Sun Jung Kim;Byung Jin Cho;Ming-Fu Li;Shi-Jin Ding

  • Influence of Al Doping on the Properties of ZnO Thin Films Grown by Atomic Layer Deposition

    Yang Geng;Li Guo;Sai-Sheng Xu;Qing-Qing Sun

  • Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition.

    Zhi-Yuan Ye;Hong-Liang Lu;Yang Geng;Yu-Zhu Gu

  • The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories

    Lu-Hao Wang;Wen Yang;Qing-Qing Sun;Peng Zhou

  • Characterization of atomic-layer-deposited Al2O3∕GaAs interface improved by NH3 plasma pretreatment

    Hong-Liang Lu;Liang Sun;Shi-Jin Ding;Min Xu

  • RF, DC, and reliability characteristics of ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate MIM capacitors for Si RF IC applications

    Shi-Jin Ding;Hang Hu;Chunxiang Zhu;Sun Jung Kim

  • The Integration of Sub-10 nm Gate Oxide on MoS2 with Ultra Low Leakage and Enhanced Mobility

    Wen Yang;Qing-Qing Sun;Yang Geng;Lin Chen

  • Flexible boron nitride-based memristor for in situ digital and analogue neuromorphic computing applications.

    Jia-Lin Meng;Tian-Yu Wang;Zhen-Yu He;Lin Chen

  • Recent Advances in β-Ga2O3-Metal Contacts.

    Ya-Wei Huan;Shun-Ming Sun;Chen-Jie Gu;Wen-Jun Liu

  • Flexible Electronic Synapses for Face Recognition Application with Multimodulated Conductance States.

    Tian-Yu Wang;Zhen-Yu He;Hao Liu;Lin Chen

  • Energy-efficient Flexible Photoelectric Device with 2D/0D Hybrid Structure for Bio-inspired Artificial Heterosynapse Application

    Jia-Lin Meng;Tian-Yu Wang;Lin Chen;Qing-Qing Sun

  • Oxygen-deficient WO3−x@TiO2−x core–shell nanosheets for efficient photoelectrochemical oxidation of neutral water solutions

    Kaiping Yuan;Qi Cao;Hong-Liang Lu;Miao Zhong

  • Enhancement of Resistive Switching Characteristics in $ \hbox{Al}_{2}\hbox{O}_{3}$ -Based RRAM With Embedded Ruthenium Nanocrystals

    Lin Chen;Hong-Yan Gou;Qing-Qing Sun;Peng Zhou

  • A two-dimensional semiconductor transistor with boosted gate control and sensing ability

    Jing Xu;Lin Chen;Ya-Wei Dai;Qian Cao

  • Spectroscopic ellipsometry study of thin NiO films grown on Si (100) by atomic layer deposition

    H. L. Lu;G. Scarel;M. Alia;M. Fanciulli

  • Highly Uniform Bipolar Resistive Switching With $ \hbox{Al}_{2}\hbox{O}_{3}$ Buffer Layer in Robust NbAlO-Based RRAM

    Lin Chen;Yan Xu;Qing-Qing Sun;Han Liu

  • Synthesis and memory characteristics of polyimides containing noncoplanar aryl pendant groups

    Yueqin Li;Yueying Chu;Runchen Fang;Shijin Ding

  • Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors

    Qian Ma;He-Mei Zheng;Yan Shao;Bao Zhu

Frequent Co-Authors

David Wei Zhang
David Wei Zhang Fudan University
Hong-Liang Lu
Hong-Liang Lu Fudan University
Peng Zhou
Peng Zhou Fudan University
Wenzhong Bao
Wenzhong Bao Fudan University
Ming-Fu Li
Ming-Fu Li Fudan University
Hao Liu
Hao Liu University of Technology Sydney
Jianlu Wang
Jianlu Wang Fudan University
Marco Fanciulli
Marco Fanciulli University of Milano-Bicocca
Ray-Hua Horng
Ray-Hua Horng National Yang Ming Chiao Tung University
You-Xuan Zheng
You-Xuan Zheng Nanjing University

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