World's Best Scientists 2026 revealed!
Shi-Jin Ding

Shi-Jin Ding

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
42
Citations
7659
World Ranking
4087
National Ranking
626

Shi-Jin Ding publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Shi-Jin Ding sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 265 publications — 49th percentile

49% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Shi-Jin Ding D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Shi-Jin Ding sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 42 D-Index — 42nd percentile

42% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Shi-Jin Ding is affiliated with Fudan University in China, with significant contributions to the fields of engineering and materials science. Their research primarily focuses on electrical and electronic engineering as well as materials chemistry, with additional work in polymers and plastics, electronic, optical, and magnetic materials, and biomedical engineering.

The scientist has published extensively in several research topics, including:

  • Semiconductor materials and devices
  • Ferroelectric and Negative Capacitance Devices
  • Advanced Memory and Neural Computing
  • Thin-Film Transistor Technologies
  • ZnO doping and properties
  • Transition Metal Oxide Nanomaterials
  • MXene and MAX Phase Materials

Ding's frequent collaborators include:

  • Xiaohan Wu
  • Wen-Jun Liu
  • David Wei Zhang
  • Lin Chen
  • Hao Zhu

They have contributed to numerous publications in key academic venues, such as:

  • IEEE Transactions on Electron Devices
  • ACS Applied Materials & Interfaces
  • arXiv (Cornell University)
  • SSRN Electronic Journal
  • ACS Applied Electronic Materials

Among recent notable papers are:

  • Three-Dimensional Nanoscale Flexible Memristor Networks with Ultralow Power for Information Transmission and Processing Application, 2020, Nano Letters
  • Ultralow Power Wearable Heterosynapse with Photoelectric Synergistic Modulation, 2020, Advanced Science
  • Flexible boron nitride-based memristor for in situ digital and analogue neuromorphic computing applications, 2021, Materials Horizons
  • Flexible 3D memristor array for binary storage and multi-states neuromorphic computing applications, 2020, InfoMat
  • Energy-efficient flexible photoelectric device with 2D/0D hybrid structure for bio-inspired artificial heterosynapse application, 2021, Nano Energy

Shi-Jin Ding's work spans across engineering and materials science, with a strong emphasis on developing advanced memory and neuromorphic computing technologies. Their research has addressed the design and application of flexible memristor networks and photoelectric devices, highlighting interests in ultralow-power systems and bio-inspired computing architectures.

Best Publications

  • A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications.

    Chunsen Liu;Xiao Yan;Xiongfei Song;Shijin Ding

  • Ultra-low power Hf0.5Zr0.5O2 based ferroelectric tunnel junction synapses for hardware neural network applications

    Lin Chen;Tian-Yu Wang;Ya-Wei Dai;Ming-Yang Cha

  • Evolution of the band-gap and optical properties of graphene oxide with controllable reduction level

    Yan Shen;Songbo Yang;Peng Zhou;Qingqing Sun

  • Tunable SnSe2 /WSe2 Heterostructure Tunneling Field Effect Transistor.

    Xiao Yan;Chunsen Liu;Chao Li;Wenzhong Bao

  • Three-Dimensional Nanoscale Flexible Memristor Networks with Ultralow Power for Information Transmission and Processing Application

    Tian-Yu Wang;Jia-Lin Meng;Ming-Yi Rao;Zhen-Yu He

  • Ultralow Power Wearable Heterosynapse with Photoelectric Synergistic Modulation.

    Tian-Yu Wang;Jia-Lin Meng;Zhen-Yu He;Lin Chen

  • Improvement of voltage linearity in high-/spl kappa/ MIM capacitors using HfO/sub 2/-SiO/sub 2/ stacked dielectric

    Sun Jung Kim;Byung Jin Cho;Ming-Fu Li;Shi-Jin Ding

  • Influence of Al Doping on the Properties of ZnO Thin Films Grown by Atomic Layer Deposition

    Yang Geng;Li Guo;Sai-Sheng Xu;Qing-Qing Sun

  • Structural, electrical, and optical properties of Ti-doped ZnO films fabricated by atomic layer deposition.

    Zhi-Yuan Ye;Hong-Liang Lu;Yang Geng;Yu-Zhu Gu

  • The mechanism of the asymmetric SET and RESET speed of graphene oxide based flexible resistive switching memories

    Lu-Hao Wang;Wen Yang;Qing-Qing Sun;Peng Zhou

  • Characterization of atomic-layer-deposited Al2O3∕GaAs interface improved by NH3 plasma pretreatment

    Hong-Liang Lu;Liang Sun;Shi-Jin Ding;Min Xu

  • RF, DC, and reliability characteristics of ALD HfO/sub 2/-Al/sub 2/O/sub 3/ laminate MIM capacitors for Si RF IC applications

    Shi-Jin Ding;Hang Hu;Chunxiang Zhu;Sun Jung Kim

  • The Integration of Sub-10 nm Gate Oxide on MoS2 with Ultra Low Leakage and Enhanced Mobility

    Wen Yang;Qing-Qing Sun;Yang Geng;Lin Chen

  • Flexible boron nitride-based memristor for in situ digital and analogue neuromorphic computing applications.

    Jia-Lin Meng;Tian-Yu Wang;Zhen-Yu He;Lin Chen

  • Recent Advances in β-Ga2O3-Metal Contacts.

    Ya-Wei Huan;Shun-Ming Sun;Chen-Jie Gu;Wen-Jun Liu

  • Flexible Electronic Synapses for Face Recognition Application with Multimodulated Conductance States.

    Tian-Yu Wang;Zhen-Yu He;Hao Liu;Lin Chen

  • Energy-efficient Flexible Photoelectric Device with 2D/0D Hybrid Structure for Bio-inspired Artificial Heterosynapse Application

    Jia-Lin Meng;Tian-Yu Wang;Lin Chen;Qing-Qing Sun

  • Oxygen-deficient WO3−x@TiO2−x core–shell nanosheets for efficient photoelectrochemical oxidation of neutral water solutions

    Kaiping Yuan;Qi Cao;Hong-Liang Lu;Miao Zhong

  • Enhancement of Resistive Switching Characteristics in $ \hbox{Al}_{2}\hbox{O}_{3}$ -Based RRAM With Embedded Ruthenium Nanocrystals

    Lin Chen;Hong-Yan Gou;Qing-Qing Sun;Peng Zhou

  • A two-dimensional semiconductor transistor with boosted gate control and sensing ability

    Jing Xu;Lin Chen;Ya-Wei Dai;Qian Cao

  • Spectroscopic ellipsometry study of thin NiO films grown on Si (100) by atomic layer deposition

    H. L. Lu;G. Scarel;M. Alia;M. Fanciulli

  • Highly Uniform Bipolar Resistive Switching With $ \hbox{Al}_{2}\hbox{O}_{3}$ Buffer Layer in Robust NbAlO-Based RRAM

    Lin Chen;Yan Xu;Qing-Qing Sun;Han Liu

  • Synthesis and memory characteristics of polyimides containing noncoplanar aryl pendant groups

    Yueqin Li;Yueying Chu;Runchen Fang;Shijin Ding

  • Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors

    Qian Ma;He-Mei Zheng;Yan Shao;Bao Zhu

Frequent Co-Authors

David Wei Zhang
David Wei Zhang Fudan University
Hong-Liang Lu
Hong-Liang Lu Fudan University
Peng Zhou
Peng Zhou Fudan University
Wenzhong Bao
Wenzhong Bao Fudan University
Wei Chen
Wei Chen Northwestern University
Ming-Fu Li
Ming-Fu Li Fudan University
Hongyu Yu
Hongyu Yu Southern University of Science and Technology
Hao Liu
Hao Liu University of Technology Sydney
Tao Wang
Tao Wang Hong Kong Polytechnic University
Jianlu Wang
Jianlu Wang Fudan University

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