What is he best known for?
The fields of study he is best known for:
- Semiconductor
- Electrical engineering
- Composite material
Hongyu Yu mostly deals with Conductance, Electronic engineering, Resistive random-access memory, Composite material and Thermal stability.
His biological study spans a wide range of topics, including Nanotechnology, Graphene, Field-effect transistor, Raman spectroscopy and Contact resistance.
The various areas that Hongyu Yu examines in his Electronic engineering study include Computer data storage, Resistive switching memory, Doping and Defect engineering.
Hongyu Yu has researched Resistive random-access memory in several fields, including Optoelectronics, Resistive switching and Line.
His study in the field of Material properties, Polyurethane and Moisture also crosses realms of Solvent and Acrylate.
He has included themes like Electrically conductive adhesive, Mineralogy, Electrical resistivity and conductivity and Dielectric in his Thermal stability study.
His most cited work include:
- A Low Energy Oxide‐Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation (314 citations)
- Stochastic learning in oxide binary synaptic device for neuromorphic computing (105 citations)
- A Study on Graphene—Metal Contact (57 citations)
What are the main themes of his work throughout his whole career to date?
His primary areas of study are Optoelectronics, High-electron-mobility transistor, Transistor, Threshold voltage and Gallium nitride.
His study in Optoelectronics is interdisciplinary in nature, drawing from both Etching, Algan gan and Passivation.
The concepts of his High-electron-mobility transistor study are interwoven with issues in Wide-bandgap semiconductor, Stress, Chemical vapor deposition and Dielectric.
The Transistor study combines topics in areas such as Condensed matter physics and Graphene.
As a part of the same scientific study, Hongyu Yu usually deals with the Threshold voltage, concentrating on Breakdown voltage and frequently concerns with Raman spectroscopy, Thermal stability and Schottky diode.
His work investigates the relationship between Quantum tunnelling and topics such as Electronic engineering that intersect with problems in Resistive random-access memory.
He most often published in these fields:
- Optoelectronics (70.49%)
- High-electron-mobility transistor (16.39%)
- Transistor (13.93%)
What were the highlights of his more recent work (between 2018-2021)?
- Optoelectronics (70.49%)
- Threshold voltage (14.75%)
- Passivation (9.84%)
In recent papers he was focusing on the following fields of study:
Hongyu Yu mainly focuses on Optoelectronics, Threshold voltage, Passivation, High-electron-mobility transistor and Gallium nitride.
His Optoelectronics research is multidisciplinary, incorporating elements of Etching, Algan gan and Transistor.
His Algan gan research includes themes of Surface roughness and Modulation.
The study incorporates disciplines such as Condensed matter physics and Graphene in addition to Transistor.
His study looks at the intersection of Threshold voltage and topics like Breakdown voltage with Schottky diode, Raman spectroscopy, Thermal stability, Schottky barrier and Leakage.
His studies in High-electron-mobility transistor integrate themes in fields like Ohmic contact, Electronic engineering, CMOS and Gallium arsenide.
Between 2018 and 2021, his most popular works were:
- Ultra-High Sensitive NO2 Gas Sensor Based on Tunable Polarity Transport in CVD-WS2/IGZO p-N Heterojunction. (24 citations)
- Enhanced dielectric properties of BaTiO3 based on ultrafine powders by two-step calcination (8 citations)
- Buried Interfaces in Halide Perovskite Photovoltaics. (7 citations)
In his most recent research, the most cited papers focused on:
- Semiconductor
- Electrical engineering
- Transistor
Hongyu Yu focuses on Optoelectronics, Transistor, Algan gan, Electric field and Leakage.
His work deals with themes such as Etching, High-electron-mobility transistor and Threshold voltage, which intersect with Optoelectronics.
His High-electron-mobility transistor study combines topics from a wide range of disciplines, such as High electron and Saturation.
His Transistor research incorporates themes from Condensed matter physics, Heterojunction and Thin-film transistor.
His Algan gan study combines topics in areas such as Alloy, Composite material, Ohmic contact and Electrical resistivity and conductivity.
His Leakage research integrates issues from AND gate, Breakdown voltage, Schottky barrier, Thermal stability and Graphene.
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