World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
55
Citations
12199
World Ranking
2973
National Ranking
596

Hongyu Yu publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Hongyu Yu sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 397 publications — 89th percentile

89% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Hongyu Yu D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Hongyu Yu sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 55 D-Index — 70th percentile

70% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

Hongyu Yu is affiliated with Southern University of Science and Technology in China. Their research encompasses a broad range of topics primarily within engineering, materials science, and physics and astronomy, with significant contributions to several subfields. These subfields include electrical and electronic engineering, condensed matter physics, materials chemistry, electronic, optical and magnetic materials, and atomic and molecular physics and optics.

The research topics covered in Hongyu Yu's work include:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Semiconductor materials and devices
  • Silicon carbide semiconductor technologies
  • ZnO doping and properties
  • Perovskite materials and applications
  • Gas sensing nanomaterials and sensors

They have collaborated frequently with several researchers, including Qing Wang, Yang Jiang, Fangzhou Du, Jiaqi He, and Wei-Chih Cheng. The number of collaborations ranges from 12 to 40 with these coauthors.

Hongyu Yu has published in multiple scientific venues. The most frequent publication venues include:

  • IEEE Electron Device Letters
  • IEEE Journal of the Electron Devices Society
  • IEEE Transactions on Electron Devices
  • Materials Science in Semiconductor Processing
  • Advanced Materials

Significant recent papers by Hongyu Yu include:

  • "Buried Interfaces in Halide Perovskite Photovoltaics," 2021, Advanced Materials
  • "Recent Advances in GaN-Based Power HEMT Devices," 2021, Advanced Electronic Materials
  • "Review and perspective of materials for flexible solar cells," 2020, Materials Reports Energy
  • "Dielectric screening in perovskite photovoltaics," 2021, Nature Communications
  • "Recent Progress on Perovskite Surfaces and Interfaces in Optoelectronic Devices," 2021, Advanced Materials

Best Publications

  • Origami lithium-ion batteries

    Zeming Song;Teng Ma;Rui Tang;Qian Cheng

  • A Low Energy Oxide‐Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation

    Shimeng Yu;Bin Gao;Zheng Fang;Hongyu Yu

  • Origami based Mechanical Metamaterials

    Cheng Lv;Deepakshyam Krishnaraju;Goran Konjevod;Hongyu Yu

  • Buried Interfaces in Halide Perovskite Photovoltaics.

    Xiaoyu Yang;Deying Luo;Deying Luo;Yuren Xiang;Lichen Zhao

  • Folding Paper-Based Lithium-Ion Batteries for Higher Areal Energy Densities

    Qian Cheng;Zeming Song;Teng Ma;Bethany B. Smith

  • Design guidelines of periodic Si nanowire arrays for solar cell application

    Junshuai Li;HongYu Yu;She Mein Wong;Xiaocheng Li

  • Piezoelectric microelectromechanical resonant sensors for chemical and biological detection

    Wei Pang;Hongyuan Zhao;Eun Sok Kim;Hao Zhang

  • Recent Advances in GaN‐Based Power HEMT Devices

    Jiaqi He;Jiaqi He;Wei Chih Cheng;Wei Chih Cheng;Qing Wang;Kai Cheng

  • A neuromorphic visual system using RRAM synaptic devices with Sub-pJ energy and tolerance to variability: Experimental characterization and large-scale modeling

    Shimeng Yu;Bin Gao;Zheng Fang;Hongyu Yu

  • Dielectric screening in perovskite photovoltaics.

    Rui Su;Zhaojian Xu;Zhaojian Xu;Jiang Wu;Deying Luo;Deying Luo

  • Stochastic learning in oxide binary synaptic device for neuromorphic computing

    Shimeng Yu;Shimeng Yu;Bin Gao;Zheng Fang;Hongyu Yu

  • Review and perspective of materials for flexible solar cells

    Xiaoyue Li;Xiaoyue Li;Peicheng Li;Zhongbin Wu;Deying Luo;Deying Luo

  • A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability

    Fanming Zeng;Judy Xilin An;Guangnan Zhou;Wenmao Li

  • Recent Progress on Perovskite Surfaces and Interfaces in Optoelectronic Devices

    Deying Luo;Deying Luo;Xiaoyue Li;Xiaoyue Li;Antoine Dumont;Hongyu Yu

  • Physical mechanisms of endurance degradation in TMO-RRAM

    B. Chen;Y. Lu;B. Gao;Y.H. Fu

  • Improvement in Reliability of Tunneling Field-Effect Transistor With p-n-i-n Structure

    Wei Cao;C J Yao;G F Jiao;Daming Huang

  • Influence of Channel Layer Thickness on the Electrical Performances of Inkjet-Printed In-Ga-Zn Oxide Thin-Film Transistors

    Ye Wang;Xiao Wei Sun;G K L Goh;H V Demir

  • A stretchable temperature sensor based on elastically buckled thin film devices on elastomeric substrates

    Cunjiang Yu;Ziyu Wang;Ziyu Wang;Hongyu Yu;Hanqing Jiang

  • Origami-enabled deformable silicon solar cells

    Rui Tang;Hai Huang;Hongen Tu;Hanshuang Liang

  • Microscopic mechanism for unipolar resistive switching behaviour of nickel oxides

    Y. S. Chen;J. F. Kang;B. Chen;Bin Gao

  • Ultra-High Sensitive NO2 Gas Sensor Based on Tunable Polarity Transport in CVD-WS2/IGZO p-N Heterojunction.

    Hongyu Tang;Hongyu Tang;Yutao Li;Robert Sokolovskij;Robert Sokolovskij;Leandro Sacco

  • Low aspect-ratio hemispherical nanopit surface texturing for enhancing light absorption in crystalline Si thin film-based solar cells

    Junshuai Li;HongYu Yu;Yali Li;Fei Wang

  • Temperature Instability of Resistive Switching on $ \hbox{HfO}_{x}$ -Based RRAM Devices

    Z Fang;H Y Yu;W J Liu;Z R Wang

  • A Study on Graphene—Metal Contact

    Wenjun Liu;Jun Wei;Xiaowei Sun;Hongyu Yu

  • Broadband absorption enhancement in randomly positioned silicon nanowire arrays for solar cell applications

    Qing Guo Du;Chan Hin Kam;Hilmi Volkan Demir;Hong Yu Yu

Frequent Co-Authors

Dim-Lee Kwong
Dim-Lee Kwong National University of Singapore
Jinfeng Kang
Jinfeng Kang Peking University
Xiao Wei Sun
Xiao Wei Sun Southern University of Science and Technology
Bin Gao
Bin Gao Xi'an Jiaotong University
Ming-Fu Li
Ming-Fu Li Fudan University
Navab Singh
Navab Singh Agency for Science, Technology and Research
Yee-Chia Yeo
Yee-Chia Yeo National University of Singapore
Zheng-Hong Lu
Zheng-Hong Lu University of Toronto
Chunxiang Zhu
Chunxiang Zhu National University of Singapore
Jun Wei
Jun Wei Harbin Institute of Technology

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