D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 33 Citations 4,545 307 World Ranking 4206 National Ranking 545

Overview

What is he best known for?

The fields of study Jinmin Li is best known for:

  • Light-emitting diode
  • Sericin
  • Fibroin

Jinmin Li incorporates Telecommunications and Bandwidth (computing) in his studies. He performs integrative study on Bandwidth (computing) and Telecommunications. Jinmin Li conducts interdisciplinary study in the fields of Electroluminescence and Photoluminescence through his works. He combines Photoluminescence and Electroluminescence in his research. He undertakes interdisciplinary study in the fields of Surface plasmon and Surface plasmon resonance through his research. He undertakes multidisciplinary investigations into Surface plasmon resonance and Plasmon in his work. In his research, Jinmin Li undertakes multidisciplinary study on Plasmon and Surface plasmon. His study ties his expertise on Optics together with the subject of Quantum efficiency. He combines Optics and Optoelectronics in his research.

His most cited work include:

  • Silk structure and degradation (78 citations)
  • Enhancement of the modulation bandwidth for GaN-based light-emitting diode by surface plasmons (49 citations)
  • Surface plasmon-enhanced nanoporous GaN-based green light-emitting diodes with Al_2O_3 passivation layer (16 citations)

What are the main themes of his work throughout his whole career to date

His Epitaxy investigation overlaps with other disciplines such as Molecular beam epitaxy and Metalorganic vapour phase epitaxy. He connects Metalorganic vapour phase epitaxy with Epitaxy in his study. His study brings together the fields of Doping and Optoelectronics. Many of his studies on Doping apply to Optoelectronics as well. Nanotechnology and Electroluminescence are frequently intertwined in his study. His Electroluminescence study typically links adjacent topics like Nanotechnology. His Layer (electronics) study frequently intersects with other fields, such as Molecular beam epitaxy. His research ties Sapphire and Optics together. Many of his studies on Sapphire involve topics that are commonly interrelated, such as Optics.

Jinmin Li most often published in these fields:

  • Optoelectronics (81.25%)
  • Nanotechnology (75.00%)
  • Layer (electronics) (62.50%)

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale

Haiyong Gao;Fawang Yan;Yang Zhang;Jinmin Li.
Journal of Applied Physics (2008)

232 Citations

282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates

Peng Dong;Jianchang Yan;Junxi Wang;Yun Zhang.
Applied Physics Letters (2013)

220 Citations

Simulation of In0.65Ga0.35N single-junction solar cell

Xiaobin Zhang;Xiaoliang Wang;Hongling Xiao;Cuibai Yang.
Journal of Physics D (2007)

128 Citations

Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure

L. Zhang;K. Ding;J. C. Yan;J. X. Wang.
Applied Physics Letters (2010)

113 Citations

Synthesis and characterization of ZnO nanorods and nanoflowers grown on GaN-based LED epiwafer using a solution deposition method

Haiyong Gao;Fawang Yan;Jinmin Li;Yiping Zeng.
Journal of Physics D (2007)

105 Citations

AlGaN-based deep-ultraviolet light-emitting diodes grown on High-quality AlN template using MOVPE

Jianchang Yan;Junxi Wang;Yun Zhang;Peipei Cong.
Journal of Crystal Growth (2015)

103 Citations

Efficiency droop in InGaN/GaN multiple-quantum-well blue light-emitting diodes grown on free-standing GaN substrate

Zhiqiang Liu;Tongbo Wei;Enqing Guo;Xiaoyan Yi.
Applied Physics Letters (2011)

88 Citations

AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD

Xiaoliang Wang;Guoxin Hu;Zhiyong Ma;Junxue Ran.
Journal of Crystal Growth (2007)

88 Citations

Improved Epitaxy of AlN Film for Deep-Ultraviolet Light-Emitting Diodes Enabled by Graphene.

Zhaolong Chen;Zhaolong Chen;Zhiqiang Liu;Tongbo Wei;Shenyuan Yang.
Advanced Materials (2019)

86 Citations

High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer.

Zhaolong Chen;Xiang Zhang;Zhipeng Dou;Zhipeng Dou;Tongbo Wei.
Advanced Materials (2018)

81 Citations

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Hao-Chung Kuo

Hao-Chung Kuo

National Yang Ming Chiao Tung University

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Chinese Academy of Sciences

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Yue Hao

Xidian University

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Zainuriah Hassan

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Zhanguo Wang

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Steven P. DenBaars

University of California, Santa Barbara

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