Jinmin Li incorporates Telecommunications and Bandwidth (computing) in his studies. He performs integrative study on Bandwidth (computing) and Telecommunications. Jinmin Li conducts interdisciplinary study in the fields of Electroluminescence and Photoluminescence through his works. He combines Photoluminescence and Electroluminescence in his research. He undertakes interdisciplinary study in the fields of Surface plasmon and Surface plasmon resonance through his research. He undertakes multidisciplinary investigations into Surface plasmon resonance and Plasmon in his work. In his research, Jinmin Li undertakes multidisciplinary study on Plasmon and Surface plasmon. His study ties his expertise on Optics together with the subject of Quantum efficiency. He combines Optics and Optoelectronics in his research.
His Epitaxy investigation overlaps with other disciplines such as Molecular beam epitaxy and Metalorganic vapour phase epitaxy. He connects Metalorganic vapour phase epitaxy with Epitaxy in his study. His study brings together the fields of Doping and Optoelectronics. Many of his studies on Doping apply to Optoelectronics as well. Nanotechnology and Electroluminescence are frequently intertwined in his study. His Electroluminescence study typically links adjacent topics like Nanotechnology. His Layer (electronics) study frequently intersects with other fields, such as Molecular beam epitaxy. His research ties Sapphire and Optics together. Many of his studies on Sapphire involve topics that are commonly interrelated, such as Optics.
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Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro- and nanoscale
Haiyong Gao;Fawang Yan;Yang Zhang;Jinmin Li.
Journal of Applied Physics (2008)
282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates
Peng Dong;Jianchang Yan;Junxi Wang;Yun Zhang.
Applied Physics Letters (2013)
Simulation of In0.65Ga0.35N single-junction solar cell
Xiaobin Zhang;Xiaoliang Wang;Hongling Xiao;Cuibai Yang.
Journal of Physics D (2007)
Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure
L. Zhang;K. Ding;J. C. Yan;J. X. Wang.
Applied Physics Letters (2010)
Synthesis and characterization of ZnO nanorods and nanoflowers grown on GaN-based LED epiwafer using a solution deposition method
Haiyong Gao;Fawang Yan;Jinmin Li;Yiping Zeng.
Journal of Physics D (2007)
AlGaN-based deep-ultraviolet light-emitting diodes grown on High-quality AlN template using MOVPE
Jianchang Yan;Junxi Wang;Yun Zhang;Peipei Cong.
Journal of Crystal Growth (2015)
Efficiency droop in InGaN/GaN multiple-quantum-well blue light-emitting diodes grown on free-standing GaN substrate
Zhiqiang Liu;Tongbo Wei;Enqing Guo;Xiaoyan Yi.
Applied Physics Letters (2011)
AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD
Xiaoliang Wang;Guoxin Hu;Zhiyong Ma;Junxue Ran.
Journal of Crystal Growth (2007)
Improved Epitaxy of AlN Film for Deep-Ultraviolet Light-Emitting Diodes Enabled by Graphene.
Zhaolong Chen;Zhaolong Chen;Zhiqiang Liu;Tongbo Wei;Shenyuan Yang.
Advanced Materials (2019)
High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer.
Zhaolong Chen;Xiang Zhang;Zhipeng Dou;Zhipeng Dou;Tongbo Wei.
Advanced Materials (2018)
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