World's Best Scientists 2026 revealed!
Jincheng Zhang

Jincheng Zhang

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Engineering and Technology
China
2026

D-Index & Metrics

Engineering and Technology

D-Index
79
Citations
24628
World Ranking
568
National Ranking
97

Jincheng Zhang publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Jincheng Zhang sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 953 publications — 99th percentile

99% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Jincheng Zhang D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Jincheng Zhang sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 79 D-Index — 94th percentile

94% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Research.com Recognitions

  • 2026 - Research.com Engineering and Technology in China Leader Award
  • 2025 - Research.com Engineering and Technology in China Leader Award

Overview

Jincheng Zhang is affiliated with Xidian University in China and has contributed extensively to the fields of Materials Science and Engineering. Their research spans a range of topics primarily centered on semiconductor materials and devices, with a particular focus on Ga2O3 and related materials, GaN-based semiconductor devices, and ZnO doping and properties.

The scientist's work includes investigation into the electronic, optical, and magnetic properties of materials as well as applications in renewable energy, sustainability, and the environment. Jincheng Zhang's publications cover various subfields such as Electrical and Electronic Engineering, Materials Chemistry, Condensed Matter Physics, and Renewable Energy.

Some of the more frequently studied topics include:

  • Ga2O3 and related materials
  • GaN-based semiconductor devices and materials
  • ZnO doping and properties
  • Semiconductor materials and devices
  • Perovskite Materials and Applications
  • Advanced Photocatalysis Techniques
  • Electronic and Structural Properties of Oxides

Jincheng Zhang has published in a variety of venues, with a considerable number of contributions in Applied Physics Letters, IEEE Transactions on Electron Devices, IEEE Electron Device Letters, SSRN Electronic Journal, and ACS Applied Materials & Interfaces. These publications represent a broad engagement with both applied and theoretical aspects of electronic and material sciences.

Frequent collaborators include Yue Hao, Chunfu Zhang, Yachao Zhang, and Jing Ning, reflecting a collaborative research network within their domain.

Representative papers by Jincheng Zhang include:

  • Ultra-wide bandgap semiconductor Ga2O3 power diodes, 2022, Nature Communications
  • Coordination Engineering of Single-Atom Catalysts for the Oxygen Reduction Reaction: A Review, 2020, Advanced Energy Materials
  • Recent advances in single atom catalysts for the electrochemical carbon dioxide reduction reaction, 2021, Chemical Science

The scientist's work on wide bandgap semiconductors and electrocatalysis contributes to the understanding and development of materials relevant to energy conversion and electronic device technologies.

Best Publications

  • A simple and efficient solar cell parameter extraction method from a single current-voltage curve

    Chunfu Zhang;Jincheng Zhang;Yue Hao;Zhenhua Lin

  • Intermolecular Exchange Boosts Efficiency of Air-Stable, Carbon-Based All-Inorganic Planar CsPbIBr2 Perovskite Solar Cells to Over 9%

    Weidong Zhu;Qianni Zhang;Dazheng Chen;Zeyang Zhang

  • Inactivation of Bacteria in an Aqueous Environment by a Direct-Current, Cold-Atmospheric-Pressure Air Plasma Microjet

    Fuxiang Liu;Fuxiang Liu;Peng Sun;Na Bai;Na Bai;Ye Tian;Ye Tian

  • NiO/Perovskite Heterojunction Contact Engineering for Highly Efficient and Stable Perovskite Solar Cells

    Bingjuan Zhang;Jie Su;Xing Guo;Long Zhou;Long Zhou

  • Reactive Oxygen Species in a Non-thermal Plasma Microjet and Water System: Generation, Conversion, and Contributions to Bacteria Inactivation—An Analysis by Electron Spin Resonance Spectroscopy†

    Haiyan Wu;Peng Sun;Hongqing Feng;Haixia Zhou;Haixia Zhou

  • Field-Plated Lateral $eta$ -Ga 2 O 3 Schottky Barrier Diode With High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm 2

    Zhuangzhuang Hu;Hong Zhou;Qian Feng;Jincheng Zhang

  • AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition

    Yuanzheng Yue;Yue Hao;Jincheng Zhang;Jinyu Ni

  • High-Performance Microwave Gate-Recessed AlGaN/AlN/GaN MOS-HEMT With 73% Power-Added Efficiency

    Yue Hao;Ling Yang;Xiaohua Ma;Jigang Ma

  • Nucleation and Crystal Growth of Organic-Inorganic Lead Halide Perovskites under Different Relative Humidity.

    Hao Gao;Chunxiong Bao;Faming Li;Tao Yu

  • Ferroelectric HfZrO x Ge and GeSn PMOSFETs with Sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved I ds

    Jiuren Zhou;Genquan Han;Qinglong Li;Yue Peng

  • Progress in state-of-the-art technologies of Ga2O3 devices

    Chenlu Wang;Jincheng Zhang;Shengrui Xu;Chunfu Zhang

  • Demonstration of β-Ga 2 O 3 Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm 2 or a 5A/700 V Handling Capabilities

    Yuanjie Lv;Yuangang Wang;Xingchang Fu;Shaobo Dun

  • Enhanced field emission from hydrogenated TiO2 nanotube arrays.

    Wei-Dong Zhu;Cheng-Wei Wang;Cheng-Wei Wang;Jian-Biao Chen;Dong-Sheng Li

  • Recent advances in micro-supercapacitors for AC line-filtering performance: From fundamental models to emerging applications

    Unknown

  • Toward Emerging Gallium Oxide Semiconductors: A Roadmap

    Yuan Yuan;Weibing Hao;Wenxiang Mu;Zhengpeng Wang

  • High-Efficiency (>14%) and Air-Stable Carbon-Based, All-Inorganic CsPbI2Br Perovskite Solar Cells through a Top-Seeded Growth Strategy

    Weidong Zhu;Wenming Chai;Dandan Chen;Junxiao Ma

  • A review of the most recent progresses of state-of-art gallium oxide power devices

    Hong Zhou;Jincheng Zhang;Chunfu Zhang;Qian Feng

  • Perovskite Films Regulation via Hydrogen-Bonded Polymer Network for Efficient and Stable Perovskite Solar Cells.

    Unknown

  • Inactivation of Bacillus subtilis Spores in Water by a Direct‐Current, Cold Atmospheric‐Pressure Air Plasma Microjet

    Peng Sun;Haiyan Wu;Na Bai;Na Bai;Haixia Zhou;Haixia Zhou

  • A halide exchange engineering for CH3NH3PbI3−xBrx perovskite solar cells with high performance and stability

    Weidong Zhu;Chunxiong Bao;Faming Li;Tao Yu

  • Interfacial Voids Trigger Carbon-Based, All-Inorganic CsPbIBr2 Perovskite Solar Cells with Photovoltage Exceeding 1.33 V

    Weidong Zhu;Zeyang Zhang;Dandan Chen;Wenming Chai

  • Dual-Phase CsPbCl3–Cs4PbCl6 Perovskite Films for Self-Powered, Visible-Blind UV Photodetectors with Fast Response

    Weidong Zhu;Minyu Deng;Dandan Chen;Zeyang Zhang

  • High-Performance Vertical $eta$ -Ga 2 O 3 Schottky Barrier Diode With Implanted Edge Termination

    Hong Zhou;Qian Feng;Jing Ning;Chunfu Zhang

  • Tooth Whitening With Hydrogen Peroxide Assisted by a Direct-Current Cold Atmospheric-Pressure Air Plasma Microjet

    Peng Sun;Jie Pan;Ye Tian;Na Bai

  • A resistance change effect in perovskite CH3NH3PbI3 films induced by ammonia.

    Chunxiong Bao;Jie Yang;Weidong Zhu;Xiaoxin Zhou

  • Mixed-solvent-vapor annealing of perovskite for photovoltaic device efficiency enhancement

    Xu Sun;Chunfu Zhang;Jingjing Chang;Haifeng Yang

  • Characterization of pulsed dc magnetron sputtering plasmas

    A Belkind;A Freilich;J Lopez;Z Zhao

  • A Review on Energy Band-Gap Engineering for Perovskite Photovoltaics

    Zhaosheng Hu;Zhenhua Lin;Jie Su;Jingcheng Zhang

Frequent Co-Authors

Yue Hao
Yue Hao Xidian University
Chunfu Zhang
Chunfu Zhang Xidian University
Genquan Han
Genquan Han Xidian University
Jingjing Chang
Jingjing Chang Xidian University
Zhenhua Lin
Zhenhua Lin Xidian University
Hong Zhou
Hong Zhou Xidian University
Weidong Zhu
Weidong Zhu Xidian University
David Wei Zhang
David Wei Zhang Fudan University
Yang Hao
Yang Hao Queen Mary University of London
Yichun Zhou
Yichun Zhou Xidian University

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