D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Engineering and Technology D-index 33 Citations 5,181 401 World Ranking 4259 National Ranking 471

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Optoelectronics
  • Organic chemistry

His primary areas of investigation include Optoelectronics, Heterojunction, Perovskite, Capacitance and Layer. His Optoelectronics research is multidisciplinary, incorporating perspectives in Sapphire and Thin film. The concepts of his Heterojunction study are interwoven with issues in Oxide, Thermal stability and Perovskite solar cell.

His Perovskite research incorporates themes from Fill factor, Passivation, Work function, Chemical compatibility and Electrical efficiency. His studies deal with areas such as Nanotechnology, Graphene and Negative impedance converter as well as Capacitance. His research integrates issues of Inorganic chemistry, Anode and Strain engineering in his study of Layer.

His most cited work include:

  • AlGaN/GaN MOS-HEMT With $\hbox{HfO}{2}$ Dielectric and $\hbox{Al}{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition (108 citations)
  • Ferroelectric HfZrO x Ge and GeSn PMOSFETs with Sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved I ds (77 citations)
  • Field-Plated Lateral $eta$ -Ga 2 O 3 Schottky Barrier Diode With High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm 2 (58 citations)

What are the main themes of his work throughout his whole career to date?

His primary scientific interests are in Optoelectronics, Heterojunction, Chemical vapor deposition, Transistor and Breakdown voltage. His Optoelectronics research is multidisciplinary, incorporating elements of Layer, Perovskite, Sapphire and High-electron-mobility transistor. His study looks at the relationship between Heterojunction and topics such as Wide-bandgap semiconductor, which overlap with Gallium nitride.

His study explores the link between Chemical vapor deposition and topics such as Epitaxy that cross with problems in Substrate and Thin film. His studies in Transistor integrate themes in fields like Condensed matter physics and Negative impedance converter. His work deals with themes such as Schottky diode and Figure of merit, which intersect with Breakdown voltage.

He most often published in these fields:

  • Optoelectronics (70.00%)
  • Heterojunction (17.65%)
  • Chemical vapor deposition (16.67%)

What were the highlights of his more recent work (between 2019-2021)?

  • Optoelectronics (70.00%)
  • Perovskite (10.20%)
  • Breakdown voltage (12.16%)

In recent papers he was focusing on the following fields of study:

Optoelectronics, Perovskite, Breakdown voltage, Diode and Schottky diode are his primary areas of study. His work carried out in the field of Optoelectronics brings together such families of science as Layer and Transistor. While the research belongs to areas of Perovskite, Jincheng Zhang spends his time largely on the problem of Halide, intersecting his research to questions surrounding Carbon.

He focuses mostly in the field of Breakdown voltage, narrowing it down to topics relating to Passivation and, in certain cases, Dielectric and Atomic layer deposition. Jincheng Zhang focuses mostly in the field of Schottky diode, narrowing it down to matters related to Gallium nitride and, in some cases, Wide-bandgap semiconductor. He has included themes like Metalorganic vapour phase epitaxy, Substrate and Graphene in his Chemical vapor deposition study.

Between 2019 and 2021, his most popular works were:

  • Improve the oxide/perovskite heterojunction contact for low temperature high efficiency and stable all-inorganic CsPbI2Br perovskite solar cells (32 citations)
  • Dual-Phase CsPbCl3–Cs4PbCl6 Perovskite Films for Self-Powered, Visible-Blind UV Photodetectors with Fast Response (22 citations)
  • NiO/Perovskite Heterojunction Contact Engineering for Highly Efficient and Stable Perovskite Solar Cells (21 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Optoelectronics
  • Organic chemistry

His main research concerns Optoelectronics, Perovskite, Breakdown voltage, Graphene and Layer. His Optoelectronics study incorporates themes from Field-effect transistor and Metalorganic vapour phase epitaxy. Jincheng Zhang has researched Perovskite in several fields, including Halide, Crystal growth and Work function.

His biological study spans a wide range of topics, including Schottky diode, Transistor, MOSFET and Figure of merit. The various areas that Jincheng Zhang examines in his Transistor study include Condensed matter physics and Ferroelectricity. His Layer study integrates concerns from other disciplines, such as Phonon and Stress.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

A simple and efficient solar cell parameter extraction method from a single current-voltage curve

Chunfu Zhang;Jincheng Zhang;Yue Hao;Zhenhua Lin.
Journal of Applied Physics (2011)

300 Citations

Intermolecular Exchange Boosts Efficiency of Air-Stable, Carbon-Based All-Inorganic Planar CsPbIBr2 Perovskite Solar Cells to Over 9%

Weidong Zhu;Qianni Zhang;Dazheng Chen;Zeyang Zhang.
Advanced Energy Materials (2018)

187 Citations

AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition

Yuanzheng Yue;Yue Hao;Jincheng Zhang;Jinyu Ni.
IEEE Electron Device Letters (2008)

175 Citations

Ferroelectric HfZrO x Ge and GeSn PMOSFETs with Sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved I ds

Jiuren Zhou;Genquan Han;Qinglong Li;Yue Peng.
international electron devices meeting (2016)

141 Citations

Field-Plated Lateral $eta$ -Ga 2 O 3 Schottky Barrier Diode With High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm 2

Zhuangzhuang Hu;Hong Zhou;Qian Feng;Jincheng Zhang.
IEEE Electron Device Letters (2018)

122 Citations

NiO/Perovskite Heterojunction Contact Engineering for Highly Efficient and Stable Perovskite Solar Cells

Bingjuan Zhang;Jie Su;Xing Guo;Long Zhou;Long Zhou.
Advanced Science (2020)

102 Citations

Mixed-solvent-vapor annealing of perovskite for photovoltaic device efficiency enhancement

Xu Sun;Chunfu Zhang;Jingjing Chang;Haifeng Yang.
Nano Energy (2016)

100 Citations

Influence of structure characteristics on room temperature ferromagnetism of Ni-doped ZnO thin films

W. Yu;L. H. Yang;X. Y. Teng;J. C. Zhang.
Journal of Applied Physics (2008)

98 Citations

Interfacial Voids Trigger Carbon-Based, All-Inorganic CsPbIBr2 Perovskite Solar Cells with Photovoltage Exceeding 1.33 V

Weidong Zhu;Zeyang Zhang;Dandan Chen;Wenming Chai.
Nano-micro Letters (2020)

95 Citations

Band Alignment Engineering Towards High Efficiency Carbon‐Based Inorganic Planar CsPbIBr2 Perovskite Solar Cells

Weidong Zhu;Zeyang Zhang;Wenming Chai;Qianni Zhang.
Chemsuschem (2019)

95 Citations

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