World's Best Scientists 2026 revealed!

D-Index & Metrics

Engineering and Technology

D-Index
61
Citations
17613
World Ranking
2005
National Ranking
407

Rong Zhang publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Rong Zhang sits on this spectrum.

38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38 publications 804+

This scientist: 674 publications — 98th percentile

98% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

Rong Zhang D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Rong Zhang sits on this spectrum.

30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 61 D-Index — 80th percentile

80% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

Overview

Rong Zhang is affiliated with Nanjing University in China and has a significant body of research focusing on materials science, engineering, and physics and astronomy. Their work spans several subfields including materials chemistry, electrical and electronic engineering, condensed matter physics, electronic, optical and magnetic materials, and atomic and molecular physics and optics. The emphasis across many publications lies in semiconductor materials and device development.

The main topics Zhang has contributed to include:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • ZnO doping and properties
  • Semiconductor materials and devices
  • Electronic and structural properties of oxides
  • 2D materials and applications
  • Magnetic properties of thin films

Frequent coauthors in Zhang's research network include Bin Liu, Hai Lu, Dunjun Chen, Fangfang Ren, and Youdou Zheng. These recurring collaborations indicate ongoing contributions to a range of studies within materials science and electronic device engineering.

Publishing predominantly in venues associated with applied physics and electronic materials, Zhang's frequent publication outlets are:

  • Applied Physics Letters
  • IEEE Electron Device Letters
  • IEEE Transactions on Electron Devices
  • IEEE Photonics Technology Letters
  • The Cambridge Structural Database

Zhang's recent papers highlight advances in semiconductor and material device research, including:

  • Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays, 2021, Light Science & Applications
  • Room-temperature intrinsic ferromagnetism in epitaxial CrTe2 ultrathin films, 2021, Nature Communications
  • A room-temperature NO2 gas sensor based on CuO nanoflakes modified with rGO nanosheets, 2021, Sensors and Actuators B Chemical
  • Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix, 2021, Nature Nanotechnology
  • An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics, 2023, Nature Communications

The scope of Zhang's work intersects with semiconductor device physics, novel materials for electronic applications, and nanotechnology. Their research includes both experimental studies and applied engineering approaches to improve device performance and functionality.

Best Publications

  • Highly Sensitive Glucose Sensor Based on Pt Nanoparticle/Polyaniline Hydrogel Heterostructures

    Dongyuan Zhai;Borui Liu;Yi Shi;Lijia Pan

  • Field-effect transistors based on two-dimensional materials for logic applications

    Xin-Ran Wang;Yi Shi;Rong Zhang

  • Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays.

    Qing Cai;Haifan You;Hui Guo;Jin Wang

  • Room-temperature intrinsic ferromagnetism in epitaxial CrTe2 ultrathin films

    Xiaoqian Zhang;Qiangsheng Lu;Wenqing Liu;Wenqing Liu;Wei Niu

  • Planar carbon nanotube–graphene hybrid films for high-performance broadband photodetectors

    Yuanda Liu;Fengqiu Wang;Xiaomu Wang;Xizhang Wang

  • A room-temperature NO2 gas sensor based on CuO nanoflakes modified with rGO nanosheets

    Haineng Bai;Hui Guo;Jin Wang;Yan Dong

  • Synthesis of Polyaniline Nanotubes with a Reactive Template of Manganese Oxide

    Lijia Pan;Lin Pu;Yi Shi;Shiyan Song

  • Jet energy scale and resolution measured in proton-proton collisions at s =13 TeV with the ATLAS detector

    G. Aad;B. Abbott;D. C. Abbott;A. Abed Abud

  • A light-stimulated synaptic device based on graphene hybrid phototransistor

    Shuchao Qin;Fengqiu Wang;Yujie Liu;Qing Wan

  • Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix.

    Wanqing Meng;Feifan Xu;Zhihao Yu;Zhihao Yu;Tao Tao

  • A robust and tuneable mid-infrared optical switch enabled by bulk Dirac fermions

    Chunhui Zhu;Fengqiu Wang;Yafei Meng;Xiang Yuan

  • Single crystal SnO2 zigzag nanobelts.

    Junhong Duan;Shaoguang Yang;Hongwei Liu;Jiangfeng Gong

  • Solar-blind Photodetector with High Avalanche Gains and Bias-tunable Detecting Functionality Based on Metastable Phase α-Ga2O3/ZnO Isotype Heterostructures

    Xuanhu Chen;Yang Xu;Dong Zhou;Sen Yang

  • Comprehensive study of the metal-insulator transition in pulsed laser deposited epitaxial VO2 thin films

    Deyi Fu;Kai Liu;Tao Tao;Kelvin Lo

  • THE GROWTH AND ANNEALING OF SINGLE CRYSTALLINE ZNO FILMS BY LOW-PRESSURE MOCVD

    Jiandong Ye;Shulin Gu;Shunmin Zhu;Tong Chen

  • Carbonized Bamboos as Excellent 3D Solar Vapor-Generation Devices

    Yue Bian;Qianqian Du;Kun Tang;Yang Shen

  • On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors

    Dawei Yan;Hai Lu;Dongsheng Cao;Dunjun Chen

  • Hydrothermal Synthesis of Polyaniline Mesostructures

    Lijia Pan;Lin Pu;Yi Shi;Tian Sun

  • Extended vapor–liquid–solid growth and field emission properties of aluminium nitride nanowires

    Qiang Wu;Zheng Hu;Xizhang Wang;Yinong Lu

  • Photoluminescence of carbon in situ doped GaN grown by halide vapor phase epitaxy

    R. Zhang;T. F. Kuech

  • Toward Emerging Gallium Oxide Semiconductors: A Roadmap

    Yuan Yuan;Weibing Hao;Wenxiang Mu;Zhengpeng Wang

Frequent Co-Authors

Youdou Zheng
Youdou Zheng Nanjing University
Hai Lu
Hai Lu Nanjing University
Bin Liu
Bin Liu National University of Singapore
Yi Shi
Yi Shi Nanjing University
Bobby Samir Acharya
Bobby Samir Acharya King's College London

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