World's Best Scientists 2026 revealed!
Youdou Zheng

Youdou Zheng

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
33
Citations
4911
World Ranking
6032
National Ranking
870

Youdou Zheng publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Youdou Zheng sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 255 publications — 46th percentile

46% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Youdou Zheng D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Youdou Zheng sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 33 D-Index — 14th percentile

14% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Youdou Zheng is a researcher affiliated with Nanjing University in China, specializing in materials science, engineering, and physics and astronomy. Their body of work spans multiple subfields, including electrical and electronic engineering, condensed matter physics, electronic, optical and magnetic materials, materials chemistry, and biomedical engineering.

The scientist's research primarily focuses on semiconductor materials and devices, with a strong emphasis on GaN-based semiconductor devices and materials as well as Ga2O3 and related materials. Additional topics of work include ZnO doping and properties, silicon carbide semiconductor technologies, metal and thin film mechanics, and thin-film transistor technologies.

They have published extensively in several scientific journals. The most frequent publication venues for their work include:

  • IEEE Electron Device Letters
  • IEEE Transactions on Electron Devices
  • Applied Physics Letters
  • IEEE Photonics Technology Letters
  • Chinese Physics B

Among their recent published papers are:

  • Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays (2021), Light Science & Applications
  • Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix (2021), Nature Nanotechnology
  • 1.37 kV/12 A NiO/β-Ga2O3 Heterojunction Diode With Nanosecond Reverse Recovery and Rugged Surge-Current Capability (2021), IEEE Transactions on Power Electronics
  • 1.95-kV Beveled-Mesa NiO/β-Ga2O3 Heterojunction Diode With 98.5% Conversion Efficiency and Over Million-Times Overvoltage Ruggedness (2021), IEEE Transactions on Power Electronics
  • Do all screw dislocations cause leakage in GaN-based devices? (2020), Applied Physics Letters

Youdou Zheng collaborates frequently with various researchers, including Rong Zhang, Dunjun Chen, Hai Lu, Fangfang Ren, and Bin Liu. These coauthors have contributed significantly to their collective research output.

Best Publications

  • Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays.

    Qing Cai;Haifan You;Hui Guo;Jin Wang

  • A room-temperature NO2 gas sensor based on CuO nanoflakes modified with rGO nanosheets

    Haineng Bai;Hui Guo;Jin Wang;Yan Dong

  • Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix.

    Wanqing Meng;Feifan Xu;Zhihao Yu;Zhihao Yu;Tao Tao

  • Solar-blind Photodetector with High Avalanche Gains and Bias-tunable Detecting Functionality Based on Metastable Phase α-Ga2O3/ZnO Isotype Heterostructures

    Xuanhu Chen;Yang Xu;Dong Zhou;Sen Yang

  • Carbonized Bamboos as Excellent 3D Solar Vapor-Generation Devices

    Yue Bian;Qianqian Du;Kun Tang;Yang Shen

  • On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors

    Dawei Yan;Hai Lu;Dongsheng Cao;Dunjun Chen

  • Hydrothermal Synthesis of Polyaniline Mesostructures

    Lijia Pan;Lin Pu;Yi Shi;Tian Sun

  • 2D Single‐Crystalline Molecular Semiconductors with Precise Layer Definition Achieved by Floating‐Coffee‐Ring‐Driven Assembly

    Qijing Wang;Jun Qian;Yun Li;Yuhan Zhang

  • Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate

    Feng Xie;Hai Lu;Xiangqian Xiu;Dunjun Chen

  • High-Gain AlGaN Solar-Blind Avalanche Photodiodes

    Zhen Guang Shao;Dun Jun Chen;Hai Lu;Rong Zhang

  • 1.37 kV/12 A NiO/β-Ga 2 O 3 Heterojunction Diode With Nanosecond Reverse Recovery and Rugged Surge-Current Capability

    Hehe Gong;Feng Zhou;Weizong Xu;Xinxin Yu

  • Ultra-Low Dark Current AlGaN-Based Solar-Blind Metal–Semiconductor–Metal Photodetectors for High-Temperature Applications

    Feng Xie;Hai Lu;Dunjun Chen;Xiaoli Ji

  • Forward tunneling current in GaN-based blue light-emitting diodes

    Dawei Yan;Hai Lu;Dunjun Chen;Rong Zhang

  • Electrical instability of amorphous indium-gallium-zinc oxide thin film transistors under monochromatic light illumination

    Xiaoming Huang;Chenfei Wu;Hai Lu;Fangfang Ren

  • 1.95-kV Beveled-Mesa NiO/β-Ga 2 O 3 Heterojunction Diode With 98.5% Conversion Efficiency and Over Million-Times Overvoltage Ruggedness

    Feng Zhou;Hehe Gong;Weizong Xu;Xinxin Yu

  • Enhanced bias stress stability of a-InGaZnO thin film transistors by inserting an ultra-thin interfacial InGaZnO:N layer

    Xiaoming Huang;Chenfei Wu;Hai Lu;Fangfang Ren

  • Carrier Transport and Gain Mechanisms in $eta$ –Ga 2 O 3 -Based Metal–Semiconductor–Metal Solar-Blind Schottky Photodetectors

    Yang Xu;Xuanhu Chen;Dong Zhou;Fangfang Ren

  • High-Temperature Single Photon Detection Performance of 4H-SiC Avalanche Photodiodes

    Dong Zhou;Fei Liu;Hai Lu;Dunjun Chen

  • Facile synthesis of mesoporous CdS/PbS/SnO2 composites for high-selectivity H2 gas sensor

    Haineng Bai;Hui Guo;Yang Tan;Jin Wang

  • Heteroepitaxial growth of thick α -Ga 2 O 3 film on sapphire (0001) by MIST-CVD technique

    Tongchuan Ma;Xuanhu Chen;Fangfang Ren;Shunming Zhu

  • Raman and photoluminescence of ZnO films deposited on Si (111) using low-pressure metalorganic chemical vapor deposition

    Jiandong Ye;Shulin Gu;Shunmin Zhu;Tong Chen

  • Highly Narrow-Band Polarization-Sensitive Solar-Blind Photodetectors Based on β-Ga2O3 Single Crystals.

    Xuanhu Chen;Wenxiang Mu;Yang Xu;Bo Fu

  • Direct observation of transferred-electron effect in GaN

    Z. C. Huang;R. Goldberg;J. C. Chen;Youdou Zheng

  • Highly selective and sensitive phosphate anion sensors based on AlGaN/GaN high electron mobility transistors functionalized by ion imprinted polymer

    Xiuling Jia;Dunjun Chen;Liu Bin;Hai Lu

  • A Reusable and High Sensitivity Nitrogen Dioxide Sensor Based on Monolayer SnSe

    Jin Wang;Guo-Feng Yang;Jun-Jun Xue;Jian-Ming Lei

  • Do all screw dislocations cause leakage in GaN-based devices?

    Jin Wang;Haifan You;Hui Guo;Junjun Xue

  • AlGaN/GaN heterostructure pH sensor with multi-sensing segments

    Yan Dong;Yan Dong;Dong-hyeok Son;Quan Dai;Jun-Hyeok Lee

  • Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection

    Weizong Xu;Yating Shi;Fangfang Ren;Dong Zhou

  • Performance of Monolayer Blue Phosphorene Double-Gate MOSFETs from the First Principles.

    Jin Wang;Qing Cai;Jianming Lei;Guofeng Yang

  • Identification and modulation of electronic band structures of single-phase β-(AlxGa1−x)2O3 alloys grown by laser molecular beam epitaxy

    Jing Li;Xuanhu Chen;Tongchuan Ma;Xiangyuan Cui

  • Spin-Coated Crystalline Molecular Monolayers for Performance Enhancement in Organic Field-Effect Transistors.

    Qijing Wang;Emilio J. Juarez-Perez;Sai Jiang;Longbin Qiu

  • Influence of thermal annealing on electrical and optical properties of indium tin oxide thin films

    Zhou Xu;Peng Chen;Zhenlong Wu;Feng Xu

Frequent Co-Authors

Rong Zhang
Rong Zhang Nanjing University
Hai Lu
Hai Lu Nanjing University
Yi Shi
Yi Shi Nanjing University
Bin Liu
Bin Liu National University of Singapore
Ben Shen
Ben Shen Scripps Research Institute
Lijia Pan
Lijia Pan Nanjing University
Feng Xu
Feng Xu Xi'an Jiaotong University
Thomas F. Kuech
Thomas F. Kuech University of Wisconsin–Madison
Xinran Wang
Xinran Wang Nanjing University
Chennupati Jagadish
Chennupati Jagadish Australian National University

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