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Youdou Zheng

Youdou Zheng

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
33
Citations
4911
World Ranking
6032
National Ranking
869

Overview

Youdou Zheng is a researcher affiliated with Nanjing University in China, specializing in materials science, engineering, and physics and astronomy. Their body of work spans multiple subfields, including electrical and electronic engineering, condensed matter physics, electronic, optical and magnetic materials, materials chemistry, and biomedical engineering.

The scientist's research primarily focuses on semiconductor materials and devices, with a strong emphasis on GaN-based semiconductor devices and materials as well as Ga2O3 and related materials. Additional topics of work include ZnO doping and properties, silicon carbide semiconductor technologies, metal and thin film mechanics, and thin-film transistor technologies.

They have published extensively in several scientific journals. The most frequent publication venues for their work include:

  • IEEE Electron Device Letters
  • IEEE Transactions on Electron Devices
  • Applied Physics Letters
  • IEEE Photonics Technology Letters
  • Chinese Physics B

Among their recent published papers are:

  • Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays (2021), Light Science & Applications
  • Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix (2021), Nature Nanotechnology
  • 1.37 kV/12 A NiO/β-Ga2O3 Heterojunction Diode With Nanosecond Reverse Recovery and Rugged Surge-Current Capability (2021), IEEE Transactions on Power Electronics
  • 1.95-kV Beveled-Mesa NiO/β-Ga2O3 Heterojunction Diode With 98.5% Conversion Efficiency and Over Million-Times Overvoltage Ruggedness (2021), IEEE Transactions on Power Electronics
  • Do all screw dislocations cause leakage in GaN-based devices? (2020), Applied Physics Letters

Youdou Zheng collaborates frequently with various researchers, including Rong Zhang, Dunjun Chen, Hai Lu, Fangfang Ren, and Bin Liu. These coauthors have contributed significantly to their collective research output.

Best Publications

  • Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays.

    Qing Cai;Haifan You;Hui Guo;Jin Wang

  • A room-temperature NO2 gas sensor based on CuO nanoflakes modified with rGO nanosheets

    Haineng Bai;Hui Guo;Jin Wang;Yan Dong

  • Three-dimensional monolithic micro-LED display driven by atomically thin transistor matrix.

    Wanqing Meng;Feifan Xu;Zhihao Yu;Zhihao Yu;Tao Tao

  • Solar-blind Photodetector with High Avalanche Gains and Bias-tunable Detecting Functionality Based on Metastable Phase α-Ga2O3/ZnO Isotype Heterostructures

    Xuanhu Chen;Yang Xu;Dong Zhou;Sen Yang

  • Carbonized Bamboos as Excellent 3D Solar Vapor-Generation Devices

    Yue Bian;Qianqian Du;Kun Tang;Yang Shen

  • On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors

    Dawei Yan;Hai Lu;Dongsheng Cao;Dunjun Chen

  • Hydrothermal Synthesis of Polyaniline Mesostructures

    Lijia Pan;Lin Pu;Yi Shi;Tian Sun

  • 2D Single‐Crystalline Molecular Semiconductors with Precise Layer Definition Achieved by Floating‐Coffee‐Ring‐Driven Assembly

    Qijing Wang;Jun Qian;Yun Li;Yuhan Zhang

  • Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate

    Feng Xie;Hai Lu;Xiangqian Xiu;Dunjun Chen

  • High-Gain AlGaN Solar-Blind Avalanche Photodiodes

    Zhen Guang Shao;Dun Jun Chen;Hai Lu;Rong Zhang

  • 1.37 kV/12 A NiO/β-Ga 2 O 3 Heterojunction Diode With Nanosecond Reverse Recovery and Rugged Surge-Current Capability

    Hehe Gong;Feng Zhou;Weizong Xu;Xinxin Yu

  • Ultra-Low Dark Current AlGaN-Based Solar-Blind Metal–Semiconductor–Metal Photodetectors for High-Temperature Applications

    Feng Xie;Hai Lu;Dunjun Chen;Xiaoli Ji

  • Forward tunneling current in GaN-based blue light-emitting diodes

    Dawei Yan;Hai Lu;Dunjun Chen;Rong Zhang

  • Electrical instability of amorphous indium-gallium-zinc oxide thin film transistors under monochromatic light illumination

    Xiaoming Huang;Chenfei Wu;Hai Lu;Fangfang Ren

  • 1.95-kV Beveled-Mesa NiO/β-Ga 2 O 3 Heterojunction Diode With 98.5% Conversion Efficiency and Over Million-Times Overvoltage Ruggedness

    Feng Zhou;Hehe Gong;Weizong Xu;Xinxin Yu

  • Enhanced bias stress stability of a-InGaZnO thin film transistors by inserting an ultra-thin interfacial InGaZnO:N layer

    Xiaoming Huang;Chenfei Wu;Hai Lu;Fangfang Ren

  • Carrier Transport and Gain Mechanisms in $eta$ –Ga 2 O 3 -Based Metal–Semiconductor–Metal Solar-Blind Schottky Photodetectors

    Yang Xu;Xuanhu Chen;Dong Zhou;Fangfang Ren

  • High-Temperature Single Photon Detection Performance of 4H-SiC Avalanche Photodiodes

    Dong Zhou;Fei Liu;Hai Lu;Dunjun Chen

  • Facile synthesis of mesoporous CdS/PbS/SnO2 composites for high-selectivity H2 gas sensor

    Haineng Bai;Hui Guo;Yang Tan;Jin Wang

  • Heteroepitaxial growth of thick α -Ga 2 O 3 film on sapphire (0001) by MIST-CVD technique

    Tongchuan Ma;Xuanhu Chen;Fangfang Ren;Shunming Zhu

  • Raman and photoluminescence of ZnO films deposited on Si (111) using low-pressure metalorganic chemical vapor deposition

    Jiandong Ye;Shulin Gu;Shunmin Zhu;Tong Chen

  • Highly Narrow-Band Polarization-Sensitive Solar-Blind Photodetectors Based on β-Ga2O3 Single Crystals.

    Xuanhu Chen;Wenxiang Mu;Yang Xu;Bo Fu

  • Direct observation of transferred-electron effect in GaN

    Z. C. Huang;R. Goldberg;J. C. Chen;Youdou Zheng

  • Highly selective and sensitive phosphate anion sensors based on AlGaN/GaN high electron mobility transistors functionalized by ion imprinted polymer

    Xiuling Jia;Dunjun Chen;Liu Bin;Hai Lu

  • A Reusable and High Sensitivity Nitrogen Dioxide Sensor Based on Monolayer SnSe

    Jin Wang;Guo-Feng Yang;Jun-Jun Xue;Jian-Ming Lei

  • Do all screw dislocations cause leakage in GaN-based devices?

    Jin Wang;Haifan You;Hui Guo;Junjun Xue

  • AlGaN/GaN heterostructure pH sensor with multi-sensing segments

    Yan Dong;Yan Dong;Dong-hyeok Son;Quan Dai;Jun-Hyeok Lee

  • Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection

    Weizong Xu;Yating Shi;Fangfang Ren;Dong Zhou

  • Performance of Monolayer Blue Phosphorene Double-Gate MOSFETs from the First Principles.

    Jin Wang;Qing Cai;Jianming Lei;Guofeng Yang

  • Identification and modulation of electronic band structures of single-phase β-(AlxGa1−x)2O3 alloys grown by laser molecular beam epitaxy

    Jing Li;Xuanhu Chen;Tongchuan Ma;Xiangyuan Cui

  • Spin-Coated Crystalline Molecular Monolayers for Performance Enhancement in Organic Field-Effect Transistors.

    Qijing Wang;Emilio J. Juarez-Perez;Sai Jiang;Longbin Qiu

  • Influence of thermal annealing on electrical and optical properties of indium tin oxide thin films

    Zhou Xu;Peng Chen;Zhenlong Wu;Feng Xu

Frequent Co-Authors

Hai Lu
Hai Lu Nanjing University
Yi Shi
Yi Shi Nanjing University
Bin Liu
Bin Liu National University of Singapore
Lijia Pan
Lijia Pan Nanjing University
Feng Xu
Feng Xu Xi'an Jiaotong University
Thomas F. Kuech
Thomas F. Kuech University of Wisconsin–Madison
Xinran Wang
Xinran Wang Nanjing University
Chennupati Jagadish
Chennupati Jagadish Australian National University
Rui Zhang
Rui Zhang National University of Singapore
Hark Hoe Tan
Hark Hoe Tan Australian National University

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