H-Index & Metrics Best Publications

H-Index & Metrics

Discipline name H-index Citations Publications World Ranking National Ranking
Engineering and Technology D-index 30 Citations 4,085 221 World Ranking 6587 National Ranking 769

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Optics
  • Laser

Optoelectronics, Light-emitting diode, Diode, Sapphire and Optics are his primary areas of study. His Optoelectronics research is multidisciplinary, incorporating perspectives in Layer, Nitride and Metalorganic vapour phase epitaxy. His Light-emitting diode study combines topics from a wide range of disciplines, such as Gallium nitride, Nanorod, Electroluminescence and Quantum efficiency.

His Sapphire research incorporates themes from Substrate, Photoluminescence and Epitaxy. The study incorporates disciplines such as Chemical vapor deposition and Graphene in addition to Epitaxy. His Optics course of study focuses on Modulation and Harmonic, Ultrashort pulse and Spontaneous emission.

His most cited work include:

  • Enzymatic glucose biosensor based on ZnO nanorod array grown by hydrothermal decomposition (380 citations)
  • 282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates (140 citations)
  • Synthesis and characterization of ZnO nanorods and nanoflowers grown on GaN-based LED epiwafer using a solution deposition method (70 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of study are Optoelectronics, Light-emitting diode, Diode, Sapphire and Optics. His Optoelectronics research incorporates themes from Nitride and Epitaxy. His work deals with themes such as Band gap, Doping and Nonlinear optics, which intersect with Nitride.

His Light-emitting diode study combines topics in areas such as Quantum well, Gallium nitride, Electroluminescence and Photonic crystal. His studies deal with areas such as Layer and Ultraviolet as well as Diode. His research in Chemical vapor deposition intersects with topics in Metalorganic vapour phase epitaxy, Photoluminescence and Raman spectroscopy.

He most often published in these fields:

  • Optoelectronics (75.96%)
  • Light-emitting diode (39.10%)
  • Diode (25.32%)

What were the highlights of his more recent work (between 2018-2021)?

  • Optoelectronics (75.96%)
  • Light-emitting diode (39.10%)
  • Epitaxy (17.95%)

In recent papers he was focusing on the following fields of study:

Junxi Wang focuses on Optoelectronics, Light-emitting diode, Epitaxy, Diode and Ultraviolet. His Optoelectronics research is multidisciplinary, relying on both Sapphire, Nanorod, Nitride and Graphene. In his research, Perovskite is intimately related to Quantum dot, which falls under the overarching field of Light-emitting diode.

His Epitaxy study also includes

  • Substrate together with Transmission electron microscopy,
  • Chemical vapor deposition which intersects with area such as Metalorganic vapour phase epitaxy,
  • Nanowire which connect with Chemical engineering and Crystal. As a part of the same scientific family, Junxi Wang mostly works in the field of Diode, focusing on Color rendering index and, on occasion, Semiconductor. Junxi Wang has included themes like Photodetector, Responsivity and Wavelength in his Ultraviolet study.

Between 2018 and 2021, his most popular works were:

  • Improved Epitaxy of AlN Film for Deep-Ultraviolet Light-Emitting Diodes Enabled by Graphene. (46 citations)
  • Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate (41 citations)
  • Surface Polarity-Induced Spatial Charge Separation Boosts Photocatalytic Overall Water Splitting on GaN Nanorod Arrays (25 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Optics
  • Laser

Junxi Wang mainly focuses on Optoelectronics, Ultraviolet, Epitaxy, Nitride and Quantum efficiency. He works in the field of Optoelectronics, namely Diode. Junxi Wang has researched Ultraviolet in several fields, including Etching and Isotropic etching.

Junxi Wang works mostly in the field of Epitaxy, limiting it down to topics relating to Substrate and, in certain cases, Doping, Buffer and Amorphous solid. The concepts of his Nitride study are interwoven with issues in Lattice, Wavefront, Nanophotonics and Holography. The Quantum efficiency study combines topics in areas such as Transmission electron microscopy, Nanorod, Light-emitting diode and Semiconductor.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Enzymatic glucose biosensor based on ZnO nanorod array grown by hydrothermal decomposition

A. Wei;X. W. Sun;J. X. Wang;Y. Lei.
Applied Physics Letters (2006)

506 Citations

282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates

Peng Dong;Jianchang Yan;Junxi Wang;Yun Zhang.
Applied Physics Letters (2013)

208 Citations

Three-dimensional hole gas induced by polarization in (0001)-oriented metal-face III-nitride structure

L. Zhang;K. Ding;J. C. Yan;J. X. Wang.
Applied Physics Letters (2010)

108 Citations

Synthesis and characterization of ZnO nanorods and nanoflowers grown on GaN-based LED epiwafer using a solution deposition method

Haiyong Gao;Fawang Yan;Jinmin Li;Yiping Zeng.
Journal of Physics D (2007)

105 Citations

Preparation and characterization of Nano Ni–TiN coatings deposited by ultrasonic electrodeposition

F.F. Xia;C. Liu;F. Wang;M.H. Wu.
Journal of Alloys and Compounds (2010)

104 Citations

AlGaN-based deep-ultraviolet light-emitting diodes grown on High-quality AlN template using MOVPE

Jianchang Yan;Junxi Wang;Yun Zhang;Peipei Cong.
Journal of Crystal Growth (2015)

98 Citations

AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD

Xiaoliang Wang;Guoxin Hu;Zhiyong Ma;Junxue Ran.
Journal of Crystal Growth (2007)

87 Citations

Localized surface plasmon-enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes

S. G. Zhang;X. W. Zhang;Z. G. Yin;J. X. Wang.
Applied Physics Letters (2011)

86 Citations

Efficiency droop in InGaN/GaN multiple-quantum-well blue light-emitting diodes grown on free-standing GaN substrate

Zhiqiang Liu;Tongbo Wei;Enqing Guo;Xiaoyan Yi.
Applied Physics Letters (2011)

81 Citations

Theoretical study of polarization-doped GaN-based light-emitting diodes

L. Zhang;K. Ding;N. X. Liu;T. B. Wei.
Applied Physics Letters (2011)

76 Citations

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