World's Best Scientists 2026 revealed!
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Yue Hao
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Engineering and Technology
China
2026

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Engineering and Technology 80 521 494 90 89 1234 31685

Yue Hao publications per year

The chart shows the history of publications by Yue Hao between 2000 and 2026, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Yue Hao published across 27 years, from 2000 to 2026, averaging 64.9 papers a year. Output peaked at 220 publications in 2021. 139 of the 1,752 publications appeared in the last two years.

No. of publications
50 100 150 200
Bar chart. Horizontal axis: year, 2000 to 2026. Vertical axis: number of publications, 0 to 220. Peak 220 publications in 2021. 2000: 4 publications 2001: 9 publications 2002: 4 publications 2003: 3 publications 2004: 7 publications 2005: 3 publications 2006: 11 publications 2007: 3 publications 2008: 14 publications 2009: 20 publications 2010: 30 publications 2011: 37 publications 2012: 44 publications 2013: 40 publications 2014: 80 publications 2015: 69 publications 2016: 94 publications 2017: 108 publications 2018: 149 publications 2019: 162 publications 2020: 159 publications 2021: 220 publications 2022: 79 publications 2023: 125 publications 2024: 139 publications 2025: 138 publications 2026: 1 publication
2000 2026

1,752 publications in total across all disciplines

View publications per year as a table
Yue Hao: publications per year, 2000 to 2026
Year Publications
2000 4
2001 9
2002 4
2003 3
2004 7
2005 3
2006 11
2007 3
2008 14
2009 20
2010 30
2011 37
2012 44
2013 40
2014 80
2015 69
2016 94
2017 108
2018 149
2019 162
2020 159
2021 220
2022 79
2023 125
2024 139
2025 138
2026 1
Total 1,752
Download as CSV

Yue Hao publication distribution in Engineering and Technology in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Engineering and Technology in 2026. The highlighted bar marks where Yue Hao sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 78 bars. Horizontal axis: publications, 38–47 to 804+. Vertical axis: number of scientists, 0 to 457. Most scientists, 457, have 148–157 publications. The last bar groups every scientist with 804 publications or more. The highlighted bar, 804+ publications, is where this scientist sits. 38–47 publications: 20 scientists 48–57 publications: 35 scientists 58–67 publications: 96 scientists 68–77 publications: 135 scientists 78–87 publications: 190 scientists 88–97 publications: 259 scientists 98–107 publications: 283 scientists 108–117 publications: 369 scientists 118–127 publications: 341 scientists 128–137 publications: 386 scientists 138–147 publications: 372 scientists 148–157 publications: 457 scientists 158–167 publications: 415 scientists 168–177 publications: 407 scientists 178–187 publications: 421 scientists 188–197 publications: 378 scientists 198–207 publications: 403 scientists 208–217 publications: 317 scientists 218–227 publications: 346 scientists 228–237 publications: 321 scientists 238–247 publications: 260 scientists 248–257 publications: 280 scientists 258–267 publications: 240 scientists 268–277 publications: 214 scientists 278–287 publications: 242 scientists 288–297 publications: 203 scientists 298–307 publications: 166 scientists 308–317 publications: 154 scientists 318–327 publications: 175 scientists 328–337 publications: 159 scientists 338–347 publications: 99 scientists 348–357 publications: 131 scientists 358–367 publications: 106 scientists 368–377 publications: 118 scientists 378–387 publications: 97 scientists 388–397 publications: 108 scientists 398–407 publications: 82 scientists 408–417 publications: 71 scientists 418–427 publications: 64 scientists 428–437 publications: 55 scientists 438–447 publications: 54 scientists 448–457 publications: 60 scientists 458–467 publications: 47 scientists 468–477 publications: 40 scientists 478–487 publications: 30 scientists 488–497 publications: 29 scientists 498–507 publications: 38 scientists 508–517 publications: 40 scientists 518–527 publications: 32 scientists 528–537 publications: 23 scientists 538–547 publications: 28 scientists 548–557 publications: 23 scientists 558–567 publications: 19 scientists 568–577 publications: 16 scientists 578–587 publications: 17 scientists 588–597 publications: 18 scientists 598–607 publications: 22 scientists 608–617 publications: 15 scientists 618–627 publications: 9 scientists 628–637 publications: 11 scientists 638–647 publications: 21 scientists 648–657 publications: 12 scientists 658–667 publications: 9 scientists 668–677 publications: 11 scientists 678–687 publications: 9 scientists 688–697 publications: 6 scientists 698–707 publications: 14 scientists 708–717 publications: 7 scientists 718–727 publications: 8 scientists 728–737 publications: 10 scientists 738–747 publications: 9 scientists 748–757 publications: 5 scientists 758–767 publications: 5 scientists 768–777 publications: 11 scientists 778–787 publications: 7 scientists 788–797 publications: 2 scientists 798–803 publications: 4 scientists 804+ publications: 100 scientists
38–47 publications 804+

This scientist: 1,234 publications — 100th percentile

100% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 804 publications or more.

View publications distribution as a table
Number of Engineering and Technology scientists by publication count, Research.com 2026 ranking edition. Based on 9,796 ranked scientists.
Publications Scientists This scientist
38–47 20
48–57 35
58–67 96
68–77 135
78–87 190
88–97 259
98–107 283
108–117 369
118–127 341
128–137 386
138–147 372
148–157 457
158–167 415
168–177 407
178–187 421
188–197 378
198–207 403
208–217 317
218–227 346
228–237 321
238–247 260
248–257 280
258–267 240
268–277 214
278–287 242
288–297 203
298–307 166
308–317 154
318–327 175
328–337 159
338–347 99
348–357 131
358–367 106
368–377 118
378–387 97
388–397 108
398–407 82
408–417 71
418–427 64
428–437 55
438–447 54
448–457 60
458–467 47
468–477 40
478–487 30
488–497 29
498–507 38
508–517 40
518–527 32
528–537 23
538–547 28
548–557 23
558–567 19
568–577 16
578–587 17
588–597 18
598–607 22
608–617 15
618–627 9
628–637 11
638–647 21
648–657 12
658–667 9
668–677 11
678–687 9
688–697 6
698–707 14
708–717 7
718–727 8
728–737 10
738–747 9
748–757 5
758–767 5
768–777 11
778–787 7
788–797 2
798–803 4
804+ 100 1,234
Download as CSV

Yue Hao D-index placement in Engineering and Technology in 2026

The chart shows the D-index (discipline H-index) distribution of Engineering and Technology scientists ranked by Research.com in 2026. The highlighted bar marks where Yue Hao sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 78 bars. Horizontal axis: D-Index, 30 to 107+. Vertical axis: number of scientists, 0 to 426. Most scientists, 426, have 42 D-Index. The last bar groups every scientist with 107 D-Index or more. The highlighted bar, 80 D-Index, is where this scientist sits. 30 D-Index: 59 scientists 31 D-Index: 114 scientists 32 D-Index: 129 scientists 33 D-Index: 189 scientists 34 D-Index: 200 scientists 35 D-Index: 262 scientists 36 D-Index: 311 scientists 37 D-Index: 312 scientists 38 D-Index: 350 scientists 39 D-Index: 385 scientists 40 D-Index: 348 scientists 41 D-Index: 362 scientists 42 D-Index: 426 scientists 43 D-Index: 380 scientists 44 D-Index: 310 scientists 45 D-Index: 341 scientists 46 D-Index: 301 scientists 47 D-Index: 306 scientists 48 D-Index: 271 scientists 49 D-Index: 246 scientists 50 D-Index: 210 scientists 51 D-Index: 253 scientists 52 D-Index: 213 scientists 53 D-Index: 221 scientists 54 D-Index: 195 scientists 55 D-Index: 186 scientists 56 D-Index: 170 scientists 57 D-Index: 167 scientists 58 D-Index: 166 scientists 59 D-Index: 144 scientists 60 D-Index: 152 scientists 61 D-Index: 141 scientists 62 D-Index: 138 scientists 63 D-Index: 131 scientists 64 D-Index: 118 scientists 65 D-Index: 114 scientists 66 D-Index: 119 scientists 67 D-Index: 95 scientists 68 D-Index: 87 scientists 69 D-Index: 77 scientists 70 D-Index: 89 scientists 71 D-Index: 69 scientists 72 D-Index: 54 scientists 73 D-Index: 46 scientists 74 D-Index: 55 scientists 75 D-Index: 54 scientists 76 D-Index: 49 scientists 77 D-Index: 53 scientists 78 D-Index: 46 scientists 79 D-Index: 28 scientists 80 D-Index: 39 scientists 81 D-Index: 36 scientists 82 D-Index: 24 scientists 83 D-Index: 26 scientists 84 D-Index: 36 scientists 85 D-Index: 18 scientists 86 D-Index: 25 scientists 87 D-Index: 19 scientists 88 D-Index: 26 scientists 89 D-Index: 27 scientists 90 D-Index: 23 scientists 91 D-Index: 15 scientists 92 D-Index: 12 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 13 scientists 97 D-Index: 13 scientists 98 D-Index: 9 scientists 99 D-Index: 7 scientists 100 D-Index: 7 scientists 101 D-Index: 8 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 9 scientists 105 D-Index: 6 scientists 106 D-Index: 9 scientists 107+ D-Index: 99 scientists
30 D-Index 107+

This scientist: 80 D-Index — 95th percentile

95% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 107 D-Index or more.

View D-Index distribution as a table
Number of Engineering and Technology scientists by D-index, Research.com 2026 ranking edition. Based on 9,796 ranked scientists.
D-Index Scientists This scientist
30 59
31 114
32 129
33 189
34 200
35 262
36 311
37 312
38 350
39 385
40 348
41 362
42 426
43 380
44 310
45 341
46 301
47 306
48 271
49 246
50 210
51 253
52 213
53 221
54 195
55 186
56 170
57 167
58 166
59 144
60 152
61 141
62 138
63 131
64 118
65 114
66 119
67 95
68 87
69 77
70 89
71 69
72 54
73 46
74 55
75 54
76 49
77 53
78 46
79 28
80 39 80
81 36
82 24
83 26
84 36
85 18
86 25
87 19
88 26
89 27
90 23
91 15
92 12
93 9
94 15
95 10
96 13
97 13
98 9
99 7
100 7
101 8
102 7
103 7
104 9
105 6
106 9
107+ 99
Download as CSV

Research.com Recognitions

  • 2026 - Research.com Engineering and Technology in China Leader Award
  • 2025 - Research.com Engineering and Technology in China Leader Award

Overview

Yue Hao is affiliated with Xidian University in China and has a research focus primarily in the fields of Engineering, Materials Science, and Physics and Astronomy. Their work spans several subfields, including Electrical and Electronic Engineering, Materials Chemistry, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, and Atomic and Molecular Physics, and Optics.

Their research topics cover a broad range of subjects, with particular emphasis on semiconductor devices and materials. Notable themes include:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Semiconductor materials and devices
  • ZnO doping and properties
  • Advanced Memory and Neural Computing
  • Advanced Photocatalysis Techniques
  • Radio Frequency Integrated Circuit Design

Yue Hao has contributed extensively to several publication venues, notably in IEEE journals and other specialized outlets. Frequent publication venues include:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • Applied Physics Letters
  • SSRN Electronic Journal
  • Micromachines

Several recent papers reflect Yue Hao's scientific focus and collaborations:

  • "Ultra-wide bandgap semiconductor Ga2O3 power diodes," 2022, Nature Communications
  • "6 kV/3.4 mΩ·cm2 Vertical β-Ga2O3 Schottky Barrier Diode With BV2/Ron,sp Performance Exceeding 1-D Unipolar Limit of GaN and SiC," 2022, IEEE Electron Device Letters
  • "Demonstration of β-Ga2O3 Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm2 or a 5A/700 V Handling Capabilities," 2020, IEEE Transactions on Power Electronics
  • "Lateral β-Ga2O3 MOSFETs With High Power Figure of Merit of 277 MW/cm2," 2020, IEEE Electron Device Letters
  • "Demonstration of the p-NiOx/n-Ga2O3 Heterojunction Gate FETs and Diodes With BV2/Ron,sp Figures of Merit of 0.39 GW/cm2 and 1.38 GW/cm2," 2021, IEEE Electron Device Letters

The scientist has collaborated frequently with several coauthors throughout their career. Notable coauthors include:

  • Jincheng Zhang
  • Xiaohua Ma
  • Genquan Han
  • Chunfu Zhang
  • Bin Hou

The volume of publications and frequent collaboration with other researchers indicate active engagement in advancing semiconductor device research, especially in relation to gallium oxide (Ga2O3) materials and device technologies. The distribution of publication venues also shows a strong presence in IEEE outlets that specialize in electron devices and applied physics.

Best Publications

  • Electron-Ion Collider: The next QCD frontier: Understanding the glue that binds us all

    A. Accardi;A. Accardi;J. L. Albacete;M. Anselmino;N. Armesto

  • A Large Hadron Electron Collider at CERN: Report on the Physics and Design Concepts for Machine and Detector

    J. L. Abelleira Fernandez;C. Adolphsen;A. N. Akay;H. Aksakal

  • Dynamic Behavior of the Triboelectric Charges and Structural Optimization of the Friction Layer for a Triboelectric Nanogenerator.

    Nuanyang Cui;Long Gu;Yimin Lei;Jinmei Liu

  • A simple and efficient solar cell parameter extraction method from a single current-voltage curve

    Chunfu Zhang;Jincheng Zhang;Yue Hao;Zhenhua Lin

  • GaN Nanowire Arrays for High-Output Nanogenerators

    Chi-Te Huang;Jinhui Song;Wei-Fan Lee;Yong Ding

  • A Large Hadron Electron Collider at CERN

    J. L. Abelleira Fernandez;J. L. Abelleira Fernandez;C. Adolphsen;A. N. Akay;H. Aksakal

  • High‐Performance Planar Perovskite Solar Cells Using Low Temperature, Solution–Combustion‐Based Nickel Oxide Hole Transporting Layer with Efficiency Exceeding 20%

    Ziye Liu;Jingjing Chang;Zhenhua Lin;Long Zhou

  • Gluons and the Quark Sea at High Energies: Distributions, Polarization, Tomography

    D. Boer;M. Diehl;R. Milner;R. Venugopalan

  • Intermolecular Exchange Boosts Efficiency of Air-Stable, Carbon-Based All-Inorganic Planar CsPbIBr2 Perovskite Solar Cells to Over 9%

    Weidong Zhu;Qianni Zhang;Dazheng Chen;Zeyang Zhang

  • Effects of piezoelectric potential on the transport characteristics of metal-ZnO nanowire-metal field effect transistor.

    Zhiyuan Gao;Jun Zhou;Yudong Gu;Peng Fei

  • NiO/Perovskite Heterojunction Contact Engineering for Highly Efficient and Stable Perovskite Solar Cells

    Bingjuan Zhang;Jie Su;Xing Guo;Long Zhou;Long Zhou

  • Single-InN-nanowire nanogenerator with upto 1 V output voltage.

    Chi-Te Huang;Jinhui Song;Chung-Min Tsai;Wei-Fan Lee

  • Field-Plated Lateral $eta$ -Ga 2 O 3 Schottky Barrier Diode With High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm 2

    Zhuangzhuang Hu;Hong Zhou;Qian Feng;Jincheng Zhang

  • AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition

    Yuanzheng Yue;Yue Hao;Jincheng Zhang;Jinyu Ni

  • High-Performance Microwave Gate-Recessed AlGaN/AlN/GaN MOS-HEMT With 73% Power-Added Efficiency

    Yue Hao;Ling Yang;Xiaohua Ma;Jigang Ma

  • Physically Transient Resistive Switching Memory Based on Silk Protein.

    Hong Wang;Hong Wang;Bowen Zhu;Xiaohua Ma;Yue Hao

  • STDP-Based Unsupervised Spike Pattern Learning in a Photonic Spiking Neural Network With VCSELs and VCSOAs

    Unknown

  • Ferroelectric HfZrO x Ge and GeSn PMOSFETs with Sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved I ds

    Jiuren Zhou;Genquan Han;Qinglong Li;Yue Peng

  • Enhancing the photovoltaic performance of planar heterojunction perovskite solar cells by doping the perovskite layer with alkali metal ions

    Jingjing Chang;Jingjing Chang;Zhenhua Lin;Hai Zhu;Furkan Halis Isikgor

  • Interface engineering of low temperature processed all-inorganic CsPbI2Br perovskite solar cells toward PCE exceeding 14%

    Long Zhou;Xing Guo;Zhenhua Lin;Jing Ma

  • Boosting the performance of planar heterojunction perovskite solar cell by controlling the precursor purity of perovskite materials

    Jingjing Chang;Jingjing Chang;Hai Zhu;Bichen Li;Furkan Halis Isikgor

Frequent Co-Authors

Jincheng Zhang
Jincheng Zhang Xidian University
Chunfu Zhang
Chunfu Zhang Xidian University
Jingjing Chang
Jingjing Chang Xidian University
Genquan Han
Genquan Han Xidian University
Zhenhua Lin
Zhenhua Lin Xidian University
Hong Zhou
Hong Zhou Xidian University
Weidong Zhu
Weidong Zhu Xidian University
Yang Lu
Yang Lu University of Hong Kong
Aijun Wen
Aijun Wen Xidian University
Ting-Chang Chang
Ting-Chang Chang National Sun Yat-sen University

External Links

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Best Scientists Citing Yue Hao

Jincheng Zhang

Jincheng Zhang

Xidian University

Publications: 58

Juan Rojo

Juan Rojo

Vrije Universiteit Amsterdam

Publications: 56

Genquan Han

Genquan Han

Xidian University

Publications: 36

Shibing Long

Shibing Long

University of Science and Technology of China

Publications: 33

Fan Ren

Fan Ren

University of Florida

Publications: 31

Mridula Gupta

Mridula Gupta

University of Delhi

Publications: 30

Weihua Tang

Weihua Tang

Nanjing University of Posts and Telecommunications

Publications: 26

Raju Venugopalan

Raju Venugopalan

Brookhaven National Laboratory

Publications: 25

Chunfu Zhang

Chunfu Zhang

Xidian University

Publications: 23

Néstor Armesto

Néstor Armesto

University of Santiago de Compostela

Publications: 22

Rong Zhang

Rong Zhang

Nanjing University

Publications: 22

Stephen J. Pearton

Stephen J. Pearton

University of Florida

Publications: 21

Rishu Chaujar

Rishu Chaujar

Delhi Technological University

Publications: 20

Feng Yuan

Feng Yuan

Lawrence Berkeley National Laboratory

Publications: 20

Xutang Tao

Xutang Tao

Shandong University

Publications: 19

Ming Liu

Ming Liu

Fudan University

Publications: 19

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