World's Best Scientists 2026 revealed!
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Engineering and Technology
China
2026

D-Index & Metrics

Engineering and Technology

D-Index
80
Citations
31685
World Ranking
520
National Ranking
91

Research.com Recognitions

  • 2026 - Research.com Engineering and Technology in China Leader Award
  • 2025 - Research.com Engineering and Technology in China Leader Award

Overview

Yue Hao is affiliated with Xidian University in China and has a research focus primarily in the fields of Engineering, Materials Science, and Physics and Astronomy. Their work spans several subfields, including Electrical and Electronic Engineering, Materials Chemistry, Condensed Matter Physics, Electronic, Optical and Magnetic Materials, and Atomic and Molecular Physics, and Optics.

Their research topics cover a broad range of subjects, with particular emphasis on semiconductor devices and materials. Notable themes include:

  • GaN-based semiconductor devices and materials
  • Ga2O3 and related materials
  • Semiconductor materials and devices
  • ZnO doping and properties
  • Advanced Memory and Neural Computing
  • Advanced Photocatalysis Techniques
  • Radio Frequency Integrated Circuit Design

Yue Hao has contributed extensively to several publication venues, notably in IEEE journals and other specialized outlets. Frequent publication venues include:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • Applied Physics Letters
  • SSRN Electronic Journal
  • Micromachines

Several recent papers reflect Yue Hao's scientific focus and collaborations:

  • "Ultra-wide bandgap semiconductor Ga2O3 power diodes," 2022, Nature Communications
  • "6 kV/3.4 mΩ·cm2 Vertical β-Ga2O3 Schottky Barrier Diode With BV2/Ron,sp Performance Exceeding 1-D Unipolar Limit of GaN and SiC," 2022, IEEE Electron Device Letters
  • "Demonstration of β-Ga2O3 Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm2 or a 5A/700 V Handling Capabilities," 2020, IEEE Transactions on Power Electronics
  • "Lateral β-Ga2O3 MOSFETs With High Power Figure of Merit of 277 MW/cm2," 2020, IEEE Electron Device Letters
  • "Demonstration of the p-NiOx/n-Ga2O3 Heterojunction Gate FETs and Diodes With BV2/Ron,sp Figures of Merit of 0.39 GW/cm2 and 1.38 GW/cm2," 2021, IEEE Electron Device Letters

The scientist has collaborated frequently with several coauthors throughout their career. Notable coauthors include:

  • Jincheng Zhang
  • Xiaohua Ma
  • Genquan Han
  • Chunfu Zhang
  • Bin Hou

The volume of publications and frequent collaboration with other researchers indicate active engagement in advancing semiconductor device research, especially in relation to gallium oxide (Ga2O3) materials and device technologies. The distribution of publication venues also shows a strong presence in IEEE outlets that specialize in electron devices and applied physics.

Best Publications

  • Electron-Ion Collider: The next QCD frontier: Understanding the glue that binds us all

    A. Accardi;A. Accardi;J. L. Albacete;M. Anselmino;N. Armesto

  • A Large Hadron Electron Collider at CERN: Report on the Physics and Design Concepts for Machine and Detector

    J. L. Abelleira Fernandez;C. Adolphsen;A. N. Akay;H. Aksakal

  • Dynamic Behavior of the Triboelectric Charges and Structural Optimization of the Friction Layer for a Triboelectric Nanogenerator.

    Nuanyang Cui;Long Gu;Yimin Lei;Jinmei Liu

  • A simple and efficient solar cell parameter extraction method from a single current-voltage curve

    Chunfu Zhang;Jincheng Zhang;Yue Hao;Zhenhua Lin

  • GaN Nanowire Arrays for High-Output Nanogenerators

    Chi-Te Huang;Jinhui Song;Wei-Fan Lee;Yong Ding

  • A Large Hadron Electron Collider at CERN

    J. L. Abelleira Fernandez;J. L. Abelleira Fernandez;C. Adolphsen;A. N. Akay;H. Aksakal

  • High‐Performance Planar Perovskite Solar Cells Using Low Temperature, Solution–Combustion‐Based Nickel Oxide Hole Transporting Layer with Efficiency Exceeding 20%

    Ziye Liu;Jingjing Chang;Zhenhua Lin;Long Zhou

  • Gluons and the Quark Sea at High Energies: Distributions, Polarization, Tomography

    D. Boer;M. Diehl;R. Milner;R. Venugopalan

  • Intermolecular Exchange Boosts Efficiency of Air-Stable, Carbon-Based All-Inorganic Planar CsPbIBr2 Perovskite Solar Cells to Over 9%

    Weidong Zhu;Qianni Zhang;Dazheng Chen;Zeyang Zhang

  • Effects of piezoelectric potential on the transport characteristics of metal-ZnO nanowire-metal field effect transistor.

    Zhiyuan Gao;Jun Zhou;Yudong Gu;Peng Fei

  • NiO/Perovskite Heterojunction Contact Engineering for Highly Efficient and Stable Perovskite Solar Cells

    Bingjuan Zhang;Jie Su;Xing Guo;Long Zhou;Long Zhou

  • Single-InN-nanowire nanogenerator with upto 1 V output voltage.

    Chi-Te Huang;Jinhui Song;Chung-Min Tsai;Wei-Fan Lee

  • Field-Plated Lateral $eta$ -Ga 2 O 3 Schottky Barrier Diode With High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm 2

    Zhuangzhuang Hu;Hong Zhou;Qian Feng;Jincheng Zhang

  • AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition

    Yuanzheng Yue;Yue Hao;Jincheng Zhang;Jinyu Ni

  • High-Performance Microwave Gate-Recessed AlGaN/AlN/GaN MOS-HEMT With 73% Power-Added Efficiency

    Yue Hao;Ling Yang;Xiaohua Ma;Jigang Ma

  • Physically Transient Resistive Switching Memory Based on Silk Protein.

    Hong Wang;Hong Wang;Bowen Zhu;Xiaohua Ma;Yue Hao

  • STDP-Based Unsupervised Spike Pattern Learning in a Photonic Spiking Neural Network With VCSELs and VCSOAs

    Unknown

  • Ferroelectric HfZrO x Ge and GeSn PMOSFETs with Sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved I ds

    Jiuren Zhou;Genquan Han;Qinglong Li;Yue Peng

  • Enhancing the photovoltaic performance of planar heterojunction perovskite solar cells by doping the perovskite layer with alkali metal ions

    Jingjing Chang;Jingjing Chang;Zhenhua Lin;Hai Zhu;Furkan Halis Isikgor

  • Interface engineering of low temperature processed all-inorganic CsPbI2Br perovskite solar cells toward PCE exceeding 14%

    Long Zhou;Xing Guo;Zhenhua Lin;Jing Ma

  • Boosting the performance of planar heterojunction perovskite solar cell by controlling the precursor purity of perovskite materials

    Jingjing Chang;Jingjing Chang;Hai Zhu;Bichen Li;Furkan Halis Isikgor

Frequent Co-Authors

Jincheng Zhang
Jincheng Zhang Xidian University
Chunfu Zhang
Chunfu Zhang Xidian University
Jingjing Chang
Jingjing Chang Xidian University
Genquan Han
Genquan Han Xidian University
Zhenhua Lin
Zhenhua Lin Xidian University
Hong Zhou
Hong Zhou Xidian University
Weidong Zhu
Weidong Zhu Xidian University
Yang Lu
Yang Lu University of Hong Kong
Aijun Wen
Aijun Wen Xidian University
Ting-Chang Chang
Ting-Chang Chang National Sun Yat-sen University

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