Stephen J. Pearton publications per year

The chart shows the history of publications by Stephen J. Pearton between 1980 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Stephen J. Pearton published across 46 years, from 1980 to 2025, averaging 57.3 papers a year. Output peaked at 120 publications in 2003. 63 of the 2,638 publications appeared in the last two years.

No. of publications

25 50 75 100

1980 2025

2,638 publications in total across all disciplines

View publications per year as a table

Stephen J. Pearton: publications per year, 1980 to 2025
Year	Publications
1980	3
1981	5
1982	19
1983	13
1984	13
1985	11
1986	16
1987	30
1988	28
1989	54
1990	62
1991	76
1992	116
1993	70
1994	66
1995	66
1996	107
1997	91
1998	77
1999	97
2000	86
2001	69
2002	68
2003	120
2004	100
2005	104
2006	114
2007	96
2008	95
2009	68
2010	58
2011	66
2012	54
2013	42
2014	28
2015	28
2016	38
2017	46
2018	41
2019	60
2020	41
2021	38
2022	45
2023	50
2024	44
2025	19
Total	2,638

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Stephen J. Pearton publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Stephen J. Pearton sits on this spectrum.

No. of scientists

200 400 600 800

50–69 publications 1,163+

This scientist: 2,452 publications — 100th percentile

100% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table

Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications	Scientists	This scientist
50–69	28
70–89	152
90–109	356
110–129	487
130–149	723
150–169	835
170–189	850
190–209	891
210–229	862
230–249	766
250–269	726
270–289	665
290–309	593
310–329	537
330–349	477
350–369	440
370–389	356
390–409	321
410–429	256
430–449	246
450–469	216
470–489	212
490–509	174
510–529	194
530–549	162
550–569	131
570–589	111
590–609	103
610–629	99
630–649	77
650–669	92
670–689	56
690–709	53
710–729	53
730–749	38
750–769	52
770–789	43
790–809	38
810–829	34
830–849	25
850–869	18
870–889	20
890–909	24
910–929	27
930–949	20
950–969	17
970–989	10
990–1,009	16
1,010–1,029	13
1,030–1,049	12
1,050–1,069	9
1,070–1,089	8
1,090–1,109	7
1,110–1,129	9
1,130–1,149	2
1,150–1,162	5
1,163+	100	2,452

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Stephen J. Pearton D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Stephen J. Pearton sits on this spectrum.

No. of scientists

200 400 600

40–41 D-Index 165+

This scientist: 134 D-Index — 98th percentile

98% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table

Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index	Scientists	This scientist
40–41	211
42–43	450
44–45	612
46–47	612
48–49	598
50–51	657
52–53	667
54–55	621
56–57	597
58–59	610
60–61	587
62–63	606
64–65	533
66–67	490
68–69	469
70–71	378
72–73	421
74–75	359
76–77	323
78–79	299
80–81	230
82–83	210
84–85	195
86–87	203
88–89	175
90–91	175
92–93	142
94–95	121
96–97	117
98–99	107
100–101	88
102–103	85
104–105	68
106–107	62
108–109	57
110–111	45
112–113	49
114–115	50
116–117	34
118–119	38
120–121	37
122–123	29
124–125	28
126–127	24
128–129	33
130–131	28
132–133	21
134–135	20	134
136–137	23
138–139	17
140–141	12
142–143	17
144–145	21
146–147	13
148–149	11
150–151	14
152–153	13
154–155	9
156–157	10
158–159	7
160–161	4
162–163	4
164	3
165+	98

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Research.com Recognitions

2025 - Research.com Materials Science in United States Leader Award
2022 - Research.com Materials Science in United States Leader Award
2011 - David Adler Lectureship Award in the Field of Materials Physics, American Physical Society
2011 - David Adler Lectureship Award in the Field of Materials Physics
2011 - SPIE Fellow
2009 - Fellow of the Materials Research Society
2005 - Fellow of American Physical Society (APS) Citation For development of advanced semiconductor processing techniques and understanding of the role of defects and impurities on compound semiconductor devices
2001 - IEEE Fellow For development of advanced semiconductor processing techniques and their application to compound semiconductor devices.

Overview

Stephen J. Pearton is affiliated with the University of Florida in the United States. Their research is primarily concentrated within the fields of Materials Science and Engineering, with substantial contributions to subfields such as Materials Chemistry, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Renewable Energy, Sustainability and the Environment, and Condensed Matter Physics.

The scientist's work covers topics including Ga2O3 and related materials, ZnO doping and properties, Advanced Photocatalysis Techniques, Semiconductor materials and devices, GaN-based semiconductor devices and materials, Electronic and Structural Properties of Oxides, and Radiation Effects in Electronics.

Frequent publication venues for the scientist include:

ECS Journal of Solid State Science and Technology
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
Journal of Applied Physics
Applied Physics Letters
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

Some recent papers authored or co-authored by Stephen J. Pearton are:

Artificial Neuron and Synapse Devices Based on 2D Materials, 2021, Small
Review-Radiation Damage in Wide and Ultra-Wide Bandgap Semiconductors, 2021, ECS Journal of Solid State Science and Technology
Deep level defect states in β-, α-, and ɛ-Ga2O3 crystals and films: Impact on device performance, 2022, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
Demonstration of 4.7 kV breakdown voltage in NiO/β-Ga2O3 vertical rectifiers, 2022, Applied Physics Letters
Diffusion of dopants and impurities in β-Ga2O3, 2021, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Frequent co-authors with whom Stephen J. Pearton has collaborated include:

F. Ren
Jian-Sian Li
A. Y. Polyakov
Chao-Ching Chiang
Aman Haque

The scientist has received several awards and honors throughout their career. These include recognition as a SPIE Fellow in 2011 and the David Adler Lectureship Award in the Field of Materials Physics awarded in 2011 by the American Physical Society. Stephen J. Pearton was also named a Fellow of the Materials Research Society in 2009, a Fellow of the American Physical Society in 2005 with a citation noting development of advanced semiconductor processing techniques and understanding defects and impurities on compound semiconductor devices, and an IEEE Fellow in 2001 recognized for similar contributions in semiconductor processing techniques applied to compound semiconductor devices.

Best Publications

The Blue Laser Diode: The Complete Story

Shuji Nakamura;Stephen Pearton;Gerhard Fasol

5652
Citations
Recent progress in processing and properties of ZnO

S.J. Pearton;D.P. Norton;K. Ip;Y.W. Heo

2884
Citations
A review of Ga2O3 materials, processing, and devices

S. J. Pearton;Jiancheng Yang;Patrick H. Cary;F. Ren

2880
Citations
GAN : PROCESSING, DEFECTS, AND DEVICES

S. J. Pearton;J. C. Zolper;R. J. Shul;F. Ren

2368
Citations
Whispering-gallery mode microdisk lasers

S. L. McCall;A. F. J. Levi;R. E. Slusher;S. J. Pearton

1935
Citations
Zinc oxide bulk, thin films and nanostructures : processing, properties and applications

C. Jagadish;S. J. Pearton

1440
Citations
Wide band gap ferromagnetic semiconductors and oxides

S. J. Pearton;C. R. Abernathy;M. E. Overberg;G. T. Thaler

1227
Citations
Hydrogen in crystalline semiconductors

S. J. Pearton;J. W. Corbett;T. S. Shi

1010
Citations
Recent advances in processing of ZnO

S. J. Pearton;D. P. Norton;K. Ip;Y. W. Heo

884
Citations
ZnO: growth, doping & processing

David P. Norton;Y. W. Heo;M. Ivill;K. Ip

802
Citations
ZnO nanowire growth and devices

Y.W. Heo;D.P. Norton;L.C. Tien;Y. Kwon

785
Citations
Dilute magnetic semiconducting oxides

S J Pearton;W H Heo;M Ivill;D P Norton

713
Citations
Hydrogen-selective sensing at room temperature with ZnO nanorods

H. T. Wang;B. S. Kang;F. Ren;L. C. Tien

697
Citations
Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxes

J. Cibert;P. M. Petroff;G. J. Dolan;S. J. Pearton

680
Citations
Single-electron capacitance spectroscopy of discrete quantum levels.

R. C. Ashoori;H. L. Stormer;J. S. Weiner;L. N. Pfeiffer

678
Citations
Fabrication and performance of GaN electronic devices

S.J. Pearton;F. Ren;A.P. Zhang;K.P. Lee

673
Citations
Hydrogen interactions with defects in crystalline solids

S. M. Myers;M. I. Baskes;H. K. Birnbaum;J. W. Corbett

665
Citations
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS

Stephen J. Pearton;Fan Ren;Marko Tadjer;Jihyun Kim

627
Citations
Advances in wide bandgap materials for semiconductor spintronics

S.J. Pearton;C.R. Abernathy;D.P. Norton;A.F. Hebard

581
Citations
Ferromagnetism in Mn-implanted ZnO:Sn single crystals

D. P. Norton;S. J. Pearton;A. F. Hebard;N. Theodoropoulou

536
Citations