2011 - David Adler Lectureship Award in the Field of Materials Physics
2011 - David Adler Lectureship Award in the Field of Materials Physics, American Physical Society
2011 - SPIE Fellow
2009 - Fellow of the Materials Research Society
2005 - Fellow of American Physical Society (APS) Citation For development of advanced semiconductor processing techniques and understanding of the role of defects and impurities on compound semiconductor devices
2001 - IEEE Fellow For development of advanced semiconductor processing techniques and their application to compound semiconductor devices.
His primary areas of investigation include Optoelectronics, Analytical chemistry, Annealing, Wide-bandgap semiconductor and Doping. His Transistor research extends to the thematically linked field of Optoelectronics. His research integrates issues of Plasma, Molecular beam epitaxy, Epitaxy, Thin film and Electrical resistivity and conductivity in his study of Analytical chemistry.
The concepts of his Annealing study are interwoven with issues in Secondary ion mass spectrometry, Passivation, Ion implantation, Ohmic contact and Thermal stability. Stephen J. Pearton has included themes like Conductance and Nanowire, Nanotechnology in his Wide-bandgap semiconductor study. His work investigates the relationship between Doping and topics such as Inorganic chemistry that intersect with problems in Silicon.
His primary areas of study are Optoelectronics, Analytical chemistry, Annealing, Doping and Wide-bandgap semiconductor. His Optoelectronics research incorporates themes from Transistor and High-electron-mobility transistor. His Analytical chemistry research incorporates elements of Electron cyclotron resonance, Plasma, Thin film and Etching, Dry etching.
His work carried out in the field of Etching brings together such families of science as Inductively coupled plasma and Nitride. Stephen J. Pearton interconnects Passivation, Ion implantation, Ohmic contact, Electrical resistivity and conductivity and Thermal stability in the investigation of issues within Annealing. His study in Doping is interdisciplinary in nature, drawing from both Molecular beam epitaxy and Photoluminescence.
The scientist’s investigation covers issues in Optoelectronics, Transistor, Wide-bandgap semiconductor, High-electron-mobility transistor and Irradiation. His Optoelectronics study frequently draws connections to adjacent fields such as Algan gan. His Transistor research is multidisciplinary, incorporating perspectives in Stress, Annealing and Electrode.
His research investigates the link between Wide-bandgap semiconductor and topics such as Analytical chemistry that cross with problems in Epitaxy. His Irradiation research is multidisciplinary, relying on both Electron, Proton and Transconductance. His Band gap research includes themes of Semiconductor and Dielectric.
Stephen J. Pearton spends much of his time researching Optoelectronics, Wide-bandgap semiconductor, Analytical chemistry, Irradiation and Transistor. His Optoelectronics study combines topics from a wide range of disciplines, such as Electron and High-electron-mobility transistor. His Wide-bandgap semiconductor research integrates issues from Nanowire, Electron mobility, Chemical vapor deposition, Electrical resistivity and conductivity and Threshold voltage.
The various areas that Stephen J. Pearton examines in his Analytical chemistry study include Metalorganic vapour phase epitaxy, Epitaxy, Annealing and Breakdown voltage. His Transistor research is multidisciplinary, incorporating elements of Biasing and Stress. His Diode study combines topics in areas such as Light-emitting diode, Ultraviolet, Optics and Semiconductor.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
The Blue Laser Diode: The Complete Story
Shuji Nakamura;Stephen Pearton;Gerhard Fasol.
Recent progress in processing and properties of ZnO
S.J. Pearton;D.P. Norton;K. Ip;Y.W. Heo.
Progress in Materials Science (2005)
GAN : PROCESSING, DEFECTS, AND DEVICES
S. J. Pearton;J. C. Zolper;R. J. Shul;F. Ren.
Journal of Applied Physics (1999)
Whispering-gallery mode microdisk lasers
S. L. McCall;A. F. J. Levi;R. E. Slusher;S. J. Pearton.
Applied Physics Letters (1992)
Zinc oxide bulk, thin films and nanostructures : processing, properties and applications
C. Jagadish;S. J. Pearton.
Wide band gap ferromagnetic semiconductors and oxides
S. J. Pearton;C. R. Abernathy;M. E. Overberg;G. T. Thaler.
Journal of Applied Physics (2003)
Hydrogen in crystalline semiconductors
S. J. Pearton;J. W. Corbett;T. S. Shi.
Recent advances in processing of ZnO
S. J. Pearton;D. P. Norton;K. Ip;Y. W. Heo.
Journal of Vacuum Science & Technology B (2004)
ZnO nanowire growth and devices
Y.W. Heo;D.P. Norton;L.C. Tien;Y. Kwon.
Materials Science & Engineering R-reports (2004)
Dilute magnetic semiconducting oxides
S J Pearton;W H Heo;M Ivill;D P Norton.
Semiconductor Science and Technology (2004)
Profile was last updated on December 6th, 2021.
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