Andrei Osinsky publications per year

The chart shows the history of publications by Andrei Osinsky between 1995 and 2026, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Andrei Osinsky published across 32 years, from 1995 to 2026, averaging 8 papers a year. Output peaked at 25 publications in 2006. 8 of the 257 publications appeared in the last two years.

No. of publications

5 10 15 20 25

1995 2026

257 publications in total across all disciplines

View publications per year as a table

Andrei Osinsky: publications per year, 1995 to 2026
Year	Publications
1995	1
1996	6
1997	8
1998	12
1999	4
2000	14
2001	11
2002	12
2003	10
2004	9
2005	20
2006	25
2007	22
2008	22
2009	0
2010	1
2011	0
2012	0
2013	2
2014	2
2015	2
2016	6
2017	5
2018	1
2019	6
2020	5
2021	8
2022	8
2023	15
2024	12
2025	7
2026	1
Total	257

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Andrei Osinsky publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Andrei Osinsky sits on this spectrum.

No. of scientists

200 400 600 800

50–69 publications 1,163+

This scientist: 230 publications — 41st percentile

41% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table

Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications	Scientists	This scientist
50–69	28
70–89	152
90–109	356
110–129	487
130–149	723
150–169	835
170–189	850
190–209	891
210–229	862
230–249	766	230
250–269	726
270–289	665
290–309	593
310–329	537
330–349	477
350–369	440
370–389	356
390–409	321
410–429	256
430–449	246
450–469	216
470–489	212
490–509	174
510–529	194
530–549	162
550–569	131
570–589	111
590–609	103
610–629	99
630–649	77
650–669	92
670–689	56
690–709	53
710–729	53
730–749	38
750–769	52
770–789	43
790–809	38
810–829	34
830–849	25
850–869	18
870–889	20
890–909	24
910–929	27
930–949	20
950–969	17
970–989	10
990–1,009	16
1,010–1,029	13
1,030–1,049	12
1,050–1,069	9
1,070–1,089	8
1,090–1,109	7
1,110–1,129	9
1,130–1,149	2
1,150–1,162	5
1,163+	100

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Andrei Osinsky D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Andrei Osinsky sits on this spectrum.

No. of scientists

200 400 600

40–41 D-Index 165+

This scientist: 56 D-Index — 37th percentile

37% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table

Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index	Scientists	This scientist
40–41	211
42–43	450
44–45	612
46–47	612
48–49	598
50–51	657
52–53	667
54–55	621
56–57	597	56
58–59	610
60–61	587
62–63	606
64–65	533
66–67	490
68–69	469
70–71	378
72–73	421
74–75	359
76–77	323
78–79	299
80–81	230
82–83	210
84–85	195
86–87	203
88–89	175
90–91	175
92–93	142
94–95	121
96–97	117
98–99	107
100–101	88
102–103	85
104–105	68
106–107	62
108–109	57
110–111	45
112–113	49
114–115	50
116–117	34
118–119	38
120–121	37
122–123	29
124–125	28
126–127	24
128–129	33
130–131	28
132–133	21
134–135	20
136–137	23
138–139	17
140–141	12
142–143	17
144–145	21
146–147	13
148–149	11
150–151	14
152–153	13
154–155	9
156–157	10
158–159	7
160–161	4
162–163	4
164	3
165+	98

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Overview

Andrei Osinsky is a researcher primarily affiliated with Corning in the United States. Their work is concentrated in the fields of Materials Science and Energy, with a notable focus on electronic, optical, and magnetic materials as well as materials chemistry. They have also contributed to renewable energy, sustainability, and electrical and electronic engineering areas.

The major topics of Osinsky's research include Ga2O3 and related materials, ZnO doping and properties, advanced photocatalysis techniques, semiconductor materials and devices, and perovskite materials and applications. Additional interests encompass electronic and structural properties of oxides and magnesium oxide properties and applications.

They have coauthored extensively with several researchers, including Fikadu Alema, Marko J. Tadjer, Alan G. Jacobs, Karl D. Hobart, and Hsiao-Hsuan Wan. Their frequent collaboration with these scientists suggests established working relationships within their research fields.

Osinsky has published research in various scientific journals and conference venues. The publication venues where they frequently contribute include:

Applied Physics Letters
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
arXiv (Cornell University)
APL Materials
IEEE Electron Device Letters

Some recent papers authored or coauthored by Osinsky are:

"MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor," 2020, Applied Physics Letters
"Low 114 cm−3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD," 2020, APL Materials
"Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm²," 2021, IEEE Electron Device Letters
"Vertical β-Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition," 2021, Applied Physics Letters
"Ge doping of β-Ga2O3 by MOCVD," 2021, APL Materials

Best Publications

Self-heating in high-power AlGaN-GaN HFETs

R. Gaska;A. Osinsky;J.W. Yang;M.S. Shur

384
Citations
Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates

R. Gaska;J. W. Yang;A. Osinsky;Q. Chen

330
Citations
Low noise p-π-n GaN ultraviolet photodetectors

A. Osinsky;S. Gangopadhyay;R. Gaska;B. Williams

318
Citations
MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature

Yuewei Zhang;Fikadu Alema;Akhil Mauze;Onur S. Koksaldi

294
Citations
High-temperature performance of AlGaN/GaN HFETs on SiC substrates

R. Gaska;Q. Chen;J. Yang;A. Osinsky

291
Citations
MgZnO/AlGaN heterostructure light-emitting diodes

A. Osinsky;J. W. Dong;M. Z. Kauser;B. Hertog

226
Citations
Luminescence properties of defects in ZnO

M.A. Reshchikov;H. Morkoç;B. Nemeth;J. Nause

220
Citations
Visible-blind GaN Schottky barrier detectors grown on Si(111)

A. Osinsky;S. Gangopadhyay;J. W. Yang;R. Gaska

210
Citations
Schottky barrier photodetectors based on AlGaN

A. Osinsky;S. Gangopadhyay;B. W. Lim;M. Z. Anwar

200
Citations
Electron beam induced current measurements of minority carrier diffusion length in gallium nitride

Leonid Chernyak;Andrei Osinsky;Henryk Temkin;J. W. Yang

195
Citations
Electrical Detection of Immobilized Proteins With Ungated AlGaN/GaN High Electron Mobility Transistors.

Byoung Sam Kang;Fan Ren;Lin Wang;Charles Lofton

192
Citations
Cleaved cavity optically pumped InGaN–GaN laser grown on spinel substrates

M. Asif Khan;C. J. Sun;J. W. Yang;Q. Chen

178
Citations
Fast growth rate of epitaxial β-Ga 2 O 3 by close coupled showerhead MOCVD

Fikadu Alema;Brian Hertog;Andrei Osinsky;Partha Mukhopadhyay

147
Citations
High quality GaN–InGaN heterostructures grown on (111) silicon substrates

J. W. Yang;C. J. Sun;Q. Chen;M. Z. Anwar

145
Citations
Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

A. M. Dabiran;A. M. Wowchak;A. Osinsky;J. Xie

143
Citations
Minority carrier transport in GaN and related materials

Leonid Chernyak;Andrei Osinsky;Alfons Schulte

133
Citations
MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor

George Seryogin;Fikadu Alema;Nicholas Valente;Houqiang Fu

132
Citations
Low-resistance ohmic contacts to p-type GaN

Y.-L. Li;E. F. Schubert;J. W. Graff;A. Osinsky

131
Citations
Experimental and theoretical study of acceptor activation and transport properties in p-type AlxGa1−xN/GaN superlattices

I. D. Goepfert;E. F. Schubert;A. Osinsky;P. E. Norris

128
Citations
Origin of conductivity and low-frequency noise in reverse-biased GaN p-n junction

D. V. Kuksenkov;H. Temkin;A. Osinsky;R. Gaska

125
Citations
Low-frequency noise and performance of GaN p-n junction photodetectors

D. V. Kuksenkov;H. Temkin;A. Osinsky;R. Gaska

122
Citations