D-Index & Metrics Best Publications

D-Index & Metrics

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 45 Citations 6,487 153 World Ranking 7007 National Ranking 1883

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Optoelectronics
  • Electrical engineering

Andrei Osinsky mainly focuses on Optoelectronics, Epitaxy, Wide-bandgap semiconductor, Doping and Photodetector. Andrei Osinsky has included themes like Sapphire and Molecular beam epitaxy in his Optoelectronics study. His study in Epitaxy is interdisciplinary in nature, drawing from both Gallium nitride, Chemical vapor deposition, Carrier lifetime, Transmission electron microscopy and Photoluminescence.

His Wide-bandgap semiconductor study combines topics from a wide range of disciplines, such as Semiconductor thin films, Transistor, High-electron-mobility transistor and Dielectric thin films. His Doping study integrates concerns from other disciplines, such as Ohmic contact, Electrical resistivity and conductivity, Superlattice and Analytical chemistry. His research integrates issues of Electroluminescence and Light-emitting diode in his study of Heterojunction.

His most cited work include:

  • Self-heating in high-power AlGaN-GaN HFETs (247 citations)
  • High-temperature performance of AlGaN/GaN HFETs on SiC substrates (239 citations)
  • Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates (221 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of investigation include Optoelectronics, Analytical chemistry, Doping, Wide-bandgap semiconductor and Epitaxy. His Optoelectronics research is multidisciplinary, relying on both Sapphire, Molecular beam epitaxy and Transistor. He combines subjects such as Electron mobility, Semiconductor and Superlattice with his study of Doping.

He usually deals with Wide-bandgap semiconductor and limits it to topics linked to Contact resistance and Thermal stability. His Epitaxy research is multidisciplinary, incorporating perspectives in Thin film, Chemical vapor deposition, Wurtzite crystal structure and Band gap. His Heterojunction study combines topics in areas such as Bipolar junction transistor and Quantum tunnelling.

He most often published in these fields:

  • Optoelectronics (61.29%)
  • Analytical chemistry (26.34%)
  • Doping (23.12%)

What were the highlights of his more recent work (between 2014-2021)?

  • Epitaxy (21.51%)
  • Chemical vapor deposition (11.29%)
  • Metalorganic vapour phase epitaxy (10.75%)

In recent papers he was focusing on the following fields of study:

Andrei Osinsky mainly investigates Epitaxy, Chemical vapor deposition, Metalorganic vapour phase epitaxy, Optoelectronics and Thin film. Andrei Osinsky regularly ties together related areas like Doping in his Epitaxy studies. His work deals with themes such as Metal, Wurtzite crystal structure and Analytical chemistry, which intersect with Chemical vapor deposition.

Andrei Osinsky studied Metalorganic vapour phase epitaxy and Substrate that intersect with MOSFET, Semiconductor and Heterojunction. His Optoelectronics research incorporates themes from Transistor and Breakdown voltage. His work is dedicated to discovering how Thin film, Sapphire are connected with Molecular beam epitaxy and Reflection high-energy electron diffraction and other disciplines.

Between 2014 and 2021, his most popular works were:

  • MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature (74 citations)
  • Solar blind photodetector based on epitaxial zinc doped Ga2O3 thin film (48 citations)
  • Fast growth rate of epitaxial β-Ga 2 O 3 by close coupled showerhead MOCVD (47 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Electrical engineering
  • Optics

His primary scientific interests are in Epitaxy, Metalorganic vapour phase epitaxy, Chemical vapor deposition, Thin film and Analytical chemistry. His Chemical vapor deposition study frequently draws connections between adjacent fields such as Doping. The study incorporates disciplines such as Optoelectronics and Responsivity in addition to Thin film.

Photodetector, Photodiode, Photoconductivity and Quantum efficiency are among the areas of Optoelectronics where Andrei Osinsky concentrates his study. His studies deal with areas such as Trimethylgallium, Substrate, Electron mobility and Sapphire as well as Analytical chemistry. The various areas that he examines in his Substrate study include Triethylgallium, Full width at half maximum, Heterojunction and Superlattice.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Self-heating in high-power AlGaN-GaN HFETs

R. Gaska;A. Osinsky;J.W. Yang;M.S. Shur.
IEEE Electron Device Letters (1998)

377 Citations

High-temperature performance of AlGaN/GaN HFETs on SiC substrates

R. Gaska;Q. Chen;J. Yang;A. Osinsky.
IEEE Electron Device Letters (1997)

357 Citations

Low noise p-π-n GaN ultraviolet photodetectors

A. Osinsky;S. Gangopadhyay;R. Gaska;B. Williams.
Applied Physics Letters (1997)

306 Citations

Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates

R. Gaska;J. W. Yang;A. Osinsky;Q. Chen.
Applied Physics Letters (1998)

293 Citations

MgZnO/AlGaN heterostructure light-emitting diodes

A. Osinsky;J. W. Dong;M. Z. Kauser;B. Hertog.
Applied Physics Letters (2004)

220 Citations

Visible-blind GaN Schottky barrier detectors grown on Si(111)

A. Osinsky;S. Gangopadhyay;J. W. Yang;R. Gaska.
Applied Physics Letters (1998)

199 Citations

Electrical detection of immobilized proteins with ungated AlGaN∕GaN high-electron-mobility Transistors

Byoung Sam Kang;Fan Ren;Lin Wang;Charles Lofton.
Applied Physics Letters (2005)

189 Citations

Schottky barrier photodetectors based on AlGaN

A. Osinsky;S. Gangopadhyay;B. W. Lim;M. Z. Anwar.
Applied Physics Letters (1998)

180 Citations

Electron beam induced current measurements of minority carrier diffusion length in gallium nitride

Leonid Chernyak;Andrei Osinsky;Henryk Temkin;J. W. Yang.
Applied Physics Letters (1996)

177 Citations

Cleaved cavity optically pumped InGaN–GaN laser grown on spinel substrates

M. Asif Khan;C. J. Sun;J. W. Yang;Q. Chen.
Applied Physics Letters (1996)

159 Citations

Best Scientists Citing Andrei Osinsky

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Umesh K. Mishra

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Jinn-Kong Sheu

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Fernando Calle

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Ji Hyun Kim

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C. R. Abernathy

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Steven P. DenBaars

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Profile was last updated on December 6th, 2021.
Research.com Ranking is based on data retrieved from the Microsoft Academic Graph (MAG).
The ranking d-index is inferred from publications deemed to belong to the considered discipline.

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