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Materials Science

D-Index
56
Citations
9283
World Ranking
8389
National Ranking
2061

Overview

Andrei Osinsky is a researcher primarily affiliated with Corning in the United States. Their work is concentrated in the fields of Materials Science and Energy, with a notable focus on electronic, optical, and magnetic materials as well as materials chemistry. They have also contributed to renewable energy, sustainability, and electrical and electronic engineering areas.

The major topics of Osinsky's research include Ga2O3 and related materials, ZnO doping and properties, advanced photocatalysis techniques, semiconductor materials and devices, and perovskite materials and applications. Additional interests encompass electronic and structural properties of oxides and magnesium oxide properties and applications.

They have coauthored extensively with several researchers, including Fikadu Alema, Marko J. Tadjer, Alan G. Jacobs, Karl D. Hobart, and Hsiao-Hsuan Wan. Their frequent collaboration with these scientists suggests established working relationships within their research fields.

Osinsky has published research in various scientific journals and conference venues. The publication venues where they frequently contribute include:

  • Applied Physics Letters
  • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • arXiv (Cornell University)
  • APL Materials
  • IEEE Electron Device Letters

Some recent papers authored or coauthored by Osinsky are:

  • "MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor," 2020, Applied Physics Letters
  • "Low 114 cm−3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD," 2020, APL Materials
  • "Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm²," 2021, IEEE Electron Device Letters
  • "Vertical β-Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition," 2021, Applied Physics Letters
  • "Ge doping of β-Ga2O3 by MOCVD," 2021, APL Materials

Best Publications

  • Self-heating in high-power AlGaN-GaN HFETs

    R. Gaska;A. Osinsky;J.W. Yang;M.S. Shur

  • Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates

    R. Gaska;J. W. Yang;A. Osinsky;Q. Chen

  • Low noise p-π-n GaN ultraviolet photodetectors

    A. Osinsky;S. Gangopadhyay;R. Gaska;B. Williams

  • MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature

    Yuewei Zhang;Fikadu Alema;Akhil Mauze;Onur S. Koksaldi

  • High-temperature performance of AlGaN/GaN HFETs on SiC substrates

    R. Gaska;Q. Chen;J. Yang;A. Osinsky

  • MgZnO/AlGaN heterostructure light-emitting diodes

    A. Osinsky;J. W. Dong;M. Z. Kauser;B. Hertog

  • Luminescence properties of defects in ZnO

    M.A. Reshchikov;H. Morkoç;B. Nemeth;J. Nause

  • Visible-blind GaN Schottky barrier detectors grown on Si(111)

    A. Osinsky;S. Gangopadhyay;J. W. Yang;R. Gaska

  • Schottky barrier photodetectors based on AlGaN

    A. Osinsky;S. Gangopadhyay;B. W. Lim;M. Z. Anwar

  • Electron beam induced current measurements of minority carrier diffusion length in gallium nitride

    Leonid Chernyak;Andrei Osinsky;Henryk Temkin;J. W. Yang

  • Electrical Detection of Immobilized Proteins With Ungated AlGaN/GaN High Electron Mobility Transistors.

    Byoung Sam Kang;Fan Ren;Lin Wang;Charles Lofton

  • Cleaved cavity optically pumped InGaN–GaN laser grown on spinel substrates

    M. Asif Khan;C. J. Sun;J. W. Yang;Q. Chen

  • Fast growth rate of epitaxial β-Ga 2 O 3 by close coupled showerhead MOCVD

    Fikadu Alema;Brian Hertog;Andrei Osinsky;Partha Mukhopadhyay

  • High quality GaN–InGaN heterostructures grown on (111) silicon substrates

    J. W. Yang;C. J. Sun;Q. Chen;M. Z. Anwar

  • Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

    A. M. Dabiran;A. M. Wowchak;A. Osinsky;J. Xie

  • Minority carrier transport in GaN and related materials

    Leonid Chernyak;Andrei Osinsky;Alfons Schulte

  • MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor

    George Seryogin;Fikadu Alema;Nicholas Valente;Houqiang Fu

  • Low-resistance ohmic contacts to p-type GaN

    Y.-L. Li;E. F. Schubert;J. W. Graff;A. Osinsky

  • Experimental and theoretical study of acceptor activation and transport properties in p-type AlxGa1−xN/GaN superlattices

    I. D. Goepfert;E. F. Schubert;A. Osinsky;P. E. Norris

  • Origin of conductivity and low-frequency noise in reverse-biased GaN p-n junction

    D. V. Kuksenkov;H. Temkin;A. Osinsky;R. Gaska

  • Low-frequency noise and performance of GaN p-n junction photodetectors

    D. V. Kuksenkov;H. Temkin;A. Osinsky;R. Gaska

Frequent Co-Authors

Stephen J. Pearton
Stephen J. Pearton University of Florida
Fan Ren
Fan Ren University of Florida
A. Y. Polyakov
A. Y. Polyakov National University of Science and Technology
David P. Norton
David P. Norton University of Florida
Weimin Chen
Weimin Chen Linköping University
Henryk Temkin
Henryk Temkin Texas Tech University
James S. Speck
James S. Speck University of California, Santa Barbara
Remis Gaska
Remis Gaska UVTON, Inc.
E. F. Schubert
E. F. Schubert Rensselaer Polytechnic Institute
Michael Shur
Michael Shur Rensselaer Polytechnic Institute

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