2026 Andrei Osinsky: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	56	8387	8105	2059	1908	230	9283

Andrei Osinsky publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Andrei Osinsky sits on this spectrum.

50 publications 1,163+

This scientist: 230 publications — 41st percentile

41% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Andrei Osinsky D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Andrei Osinsky sits on this spectrum.

40 D-Index 165+

This scientist: 56 D-Index — 37th percentile

37% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Andrei Osinsky is a researcher primarily affiliated with Corning in the United States. Their work is concentrated in the fields of Materials Science and Energy, with a notable focus on electronic, optical, and magnetic materials as well as materials chemistry. They have also contributed to renewable energy, sustainability, and electrical and electronic engineering areas.

The major topics of Osinsky's research include Ga2O3 and related materials, ZnO doping and properties, advanced photocatalysis techniques, semiconductor materials and devices, and perovskite materials and applications. Additional interests encompass electronic and structural properties of oxides and magnesium oxide properties and applications.

They have coauthored extensively with several researchers, including Fikadu Alema, Marko J. Tadjer, Alan G. Jacobs, Karl D. Hobart, and Hsiao-Hsuan Wan. Their frequent collaboration with these scientists suggests established working relationships within their research fields.

Osinsky has published research in various scientific journals and conference venues. The publication venues where they frequently contribute include:

Applied Physics Letters
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
arXiv (Cornell University)
APL Materials
IEEE Electron Device Letters

Some recent papers authored or coauthored by Osinsky are:

"MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor," 2020, Applied Physics Letters
"Low 114 cm−3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD," 2020, APL Materials
"Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm²," 2021, IEEE Electron Device Letters
"Vertical β-Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition," 2021, Applied Physics Letters
"Ge doping of β-Ga2O3 by MOCVD," 2021, APL Materials

Best Publications

Self-heating in high-power AlGaN-GaN HFETs

R. Gaska;A. Osinsky;J.W. Yang;M.S. Shur

384
Citations
Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates

R. Gaska;J. W. Yang;A. Osinsky;Q. Chen

330
Citations
Low noise p-π-n GaN ultraviolet photodetectors

A. Osinsky;S. Gangopadhyay;R. Gaska;B. Williams

318
Citations
MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature

Yuewei Zhang;Fikadu Alema;Akhil Mauze;Onur S. Koksaldi

294
Citations
High-temperature performance of AlGaN/GaN HFETs on SiC substrates

R. Gaska;Q. Chen;J. Yang;A. Osinsky

291
Citations
MgZnO/AlGaN heterostructure light-emitting diodes

A. Osinsky;J. W. Dong;M. Z. Kauser;B. Hertog

226
Citations
Luminescence properties of defects in ZnO

M.A. Reshchikov;H. Morkoç;B. Nemeth;J. Nause

220
Citations
Visible-blind GaN Schottky barrier detectors grown on Si(111)

A. Osinsky;S. Gangopadhyay;J. W. Yang;R. Gaska

210
Citations
Schottky barrier photodetectors based on AlGaN

A. Osinsky;S. Gangopadhyay;B. W. Lim;M. Z. Anwar

200
Citations
Electron beam induced current measurements of minority carrier diffusion length in gallium nitride

Leonid Chernyak;Andrei Osinsky;Henryk Temkin;J. W. Yang

195
Citations
Electrical Detection of Immobilized Proteins With Ungated AlGaN/GaN High Electron Mobility Transistors.

Byoung Sam Kang;Fan Ren;Lin Wang;Charles Lofton

192
Citations
Cleaved cavity optically pumped InGaN–GaN laser grown on spinel substrates

M. Asif Khan;C. J. Sun;J. W. Yang;Q. Chen

178
Citations
Fast growth rate of epitaxial β-Ga 2 O 3 by close coupled showerhead MOCVD

Fikadu Alema;Brian Hertog;Andrei Osinsky;Partha Mukhopadhyay

147
Citations
High quality GaN–InGaN heterostructures grown on (111) silicon substrates

J. W. Yang;C. J. Sun;Q. Chen;M. Z. Anwar

145
Citations
Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

A. M. Dabiran;A. M. Wowchak;A. Osinsky;J. Xie

143
Citations
Minority carrier transport in GaN and related materials

Leonid Chernyak;Andrei Osinsky;Alfons Schulte

133
Citations
MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor

George Seryogin;Fikadu Alema;Nicholas Valente;Houqiang Fu

132
Citations
Low-resistance ohmic contacts to p-type GaN

Y.-L. Li;E. F. Schubert;J. W. Graff;A. Osinsky

131
Citations
Experimental and theoretical study of acceptor activation and transport properties in p-type AlxGa1−xN/GaN superlattices

I. D. Goepfert;E. F. Schubert;A. Osinsky;P. E. Norris

128
Citations
Origin of conductivity and low-frequency noise in reverse-biased GaN p-n junction

D. V. Kuksenkov;H. Temkin;A. Osinsky;R. Gaska

125
Citations
Low-frequency noise and performance of GaN p-n junction photodetectors

D. V. Kuksenkov;H. Temkin;A. Osinsky;R. Gaska

122
Citations