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A. Y. Polyakov

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 52 2535 2431 5 4 357 9873
Materials Science 54 8885 8581 24 22 401 10804

A. Y. Polyakov publications per year

The chart shows the history of publications by A. Y. Polyakov between 1989 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. A. Y. Polyakov published across 37 years, from 1989 to 2025, averaging 12.2 papers a year. Output peaked at 26 publications in 2006. 19 of the 452 publications appeared in the last two years.

No. of publications
5 10 15 20 25
Bar chart. Horizontal axis: year, 1989 to 2025. Vertical axis: number of publications, 0 to 26. Peak 26 publications in 2006. 1989: 6 publications 1990: 5 publications 1991: 0 publications 1992: 10 publications 1993: 9 publications 1994: 8 publications 1995: 4 publications 1996: 9 publications 1997: 4 publications 1998: 11 publications 1999: 2 publications 2000: 12 publications 2001: 13 publications 2002: 18 publications 2003: 17 publications 2004: 16 publications 2005: 11 publications 2006: 26 publications 2007: 17 publications 2008: 15 publications 2009: 13 publications 2010: 10 publications 2011: 12 publications 2012: 15 publications 2013: 9 publications 2014: 18 publications 2015: 10 publications 2016: 12 publications 2017: 17 publications 2018: 23 publications 2019: 16 publications 2020: 16 publications 2021: 17 publications 2022: 12 publications 2023: 20 publications 2024: 13 publications 2025: 6 publications
1989 2025

452 publications in total across all disciplines

View publications per year as a table
A. Y. Polyakov: publications per year, 1989 to 2025
Year Publications
1989 6
1990 5
1991 0
1992 10
1993 9
1994 8
1995 4
1996 9
1997 4
1998 11
1999 2
2000 12
2001 13
2002 18
2003 17
2004 16
2005 11
2006 26
2007 17
2008 15
2009 13
2010 10
2011 12
2012 15
2013 9
2014 18
2015 10
2016 12
2017 17
2018 23
2019 16
2020 16
2021 17
2022 12
2023 20
2024 13
2025 6
Total 452
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A. Y. Polyakov publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where A. Y. Polyakov sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 354–373 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 357 publications — 68th percentile

68% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214 357
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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A. Y. Polyakov D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where A. Y. Polyakov sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 52 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 52 D-Index — 64th percentile

64% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108 52
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

A. Y. Polyakov is affiliated with the National University of Science and Technology in the Russian Federation. Their research primarily focuses on materials science, with particular attention to energy applications. The scientist has contributed to various subfields including materials chemistry, electronic, optical and magnetic materials, renewable energy and sustainability, electrical and electronic engineering, and condensed matter physics.

The major research topics addressed by A. Y. Polyakov cover a range of semiconductor and oxide materials. These topics include Ga2O3 and related materials, ZnO doping and properties, advanced photocatalysis techniques, semiconductor materials and devices, GaN-based semiconductor devices and materials, electronic and structural properties of oxides, and perovskite materials and applications.

Among the recent papers authored or coauthored by A. Y. Polyakov are:

  • "Review-Radiation Damage in Wide and Ultra-Wide Bandgap Semiconductors," 2021, ECS Journal of Solid State Science and Technology
  • "Deep level defect states in β-, α-, and ɛ-Ga2O3 crystals and films: Impact on device performance," 2022, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • "Editors' Choice-Electrical Properties and Deep Traps in α-Ga2O3:Sn Films Grown on Sapphire by Halide Vapor Phase Epitaxy," 2020, ECS Journal of Solid State Science and Technology

A. Y. Polyakov has worked frequently with coauthors including S. J. Pearton, A.A. Vasil'ev, Ivan Shchemerov, E. B. Yakimov, and А. I. Kochkova. These collaborations reflect close ties with researchers engaged in similar topics within semiconductor materials and device physics.

The scientist's research outputs have been published extensively in several journals, with notable numbers of publications in:

  • ECS Journal of Solid State Science and Technology
  • Journal of Applied Physics
  • Journal of Alloys and Compounds
  • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • Journal of Physics D Applied Physics

Best Publications

  • Review—Ionizing Radiation Damage Effects on GaN Devices

    S. J. Pearton;F. Ren;Erin Patrick;M. E. Law

  • Gallium antimonide device related properties

    A.G. Milnes;A.Y. Polyakov

  • Electrical characteristics of Au and Ag Schottky contacts on n-ZnO

    A. Y. Polyakov;N. B. Smirnov;E. A. Kozhukhova;V. I. Vdovin

  • Radiation damage effects in Ga2O3 materials and devices

    Jihyun Kim;Stephen J. Pearton;Chaker Fares;Jiancheng Yang

  • Review of radiation damage in GaN-based materials and devices

    Stephen J. Pearton;Richard Deist;Fan Ren;Lu Liu

  • Deep traps in GaN-based structures as affecting the performance of GaN devices

    Alexander Y. Polyakov;In-Hwan Lee

  • Radiation effects in GaN materials and devices

    Alexander Y. Polyakov;S. J. Pearton;Patrick Frenzer;Fan Ren

  • Lifetime-limiting defects in n− 4H-SiC epilayers

    P. B. Klein;B. V. Shanabrook;S. W. Huh;A. Y. Polyakov

  • Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular beam epitaxy

    F. Hamdani;M. Yeadon;David J. Smith;H. Tang

  • Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage

    A. Y. Polyakov;N. B. Smirnov;I. V. Shchemerov;E. B. Yakimov;E. B. Yakimov

  • Indium arsenide: a semiconductor for high speed and electro-optical devices

    A.G Milnes;A.Y Polyakov

  • Hole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si

    A. Y. Polyakov;N. B. Smirnov;I. V. Shchemerov;S. J. Pearton

  • Properties of Si donors and persistent photoconductivity in AlGaN

    A.Y. Polyakov;N.B. Smirnov;A.V. Govorkov;M.G. Mil'vidskii

  • Lateral AlxGa1-xN power rectifiers with 9.7 kV reverse breakdown voltage

    A. P. Zhang;J. W. Johnson;F. Ren;J. Han

  • Studies of the origin of the yellow luminescence band, the nature of nonradiative recombination and the origin of persistent photoconductivity in n-GaN films

    A.Y Polyakov;N.B Smirnov;A.S Usikov;A.V Govorkov

  • Electrical properties of bulk semi-insulating β-Ga2O3 (Fe)

    A. Y. Polyakov;N. B. Smirnov;I. V. Shchemerov;S. J. Pearton

  • On the origin of electrically active defects in AlGaN alloys grown by organometallic vapor phase epitaxy

    A. Y. Polyakov;M. Shin;J. A. Freitas;M. Skowronski

  • Deep centers and their spatial distribution in undoped GaN films grown by organometallic vapor phase epitaxy

    A. Y. Polyakov;N. B. Smirnov;A. V. Govorkov;M. Shin

  • Review—Radiation Damage in Wide and Ultra-Wide Bandgap Semiconductors

    S. J. Pearton;Assel Aitkaliyeva;Minghan Xian;Fan Ren

  • Proton implantation effects on electrical and recombination properties of undoped ZnO

    A. Y. Polyakov;N. B. Smirnov;A. V. Govorkov;E. A. Kozhukhova

  • Compensation and persistent photocapacitance in homoepitaxial Sn-doped β-Ga2O3

    A. Y. Polyakov;N. B. Smirnov;I. V. Shchemerov;D. Gogova

Frequent Co-Authors

Stephen J. Pearton
Stephen J. Pearton University of Florida
In-Hwan Lee
In-Hwan Lee Korea University
Fan Ren
Fan Ren University of Florida
Marek Skowronski
Marek Skowronski Carnegie Mellon University
Andrei Osinsky
Andrei Osinsky Corning (United States)
Ji Hyun Kim
Ji Hyun Kim Seoul National University
J. M. Zavada
J. M. Zavada New York University
R. G. Wilson
R. G. Wilson General Motors (United States)
C. R. Abernathy
C. R. Abernathy University of Florida
David P. Norton
David P. Norton University of Florida

External Links

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