D-Index & Metrics Best Publications

D-Index & Metrics

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 44 Citations 7,069 306 World Ranking 7283 National Ranking 21

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Optics
  • Optoelectronics

The scientist’s investigation covers issues in Optoelectronics, Analytical chemistry, Wide-bandgap semiconductor, Doping and Deep-level transient spectroscopy. The various areas that Alexander Y. Polyakov examines in his Optoelectronics study include High-electron-mobility transistor, Radiation damage and Epitaxy. His studies in Analytical chemistry integrate themes in fields like Ion implantation, Photocurrent and Acceptor.

His Wide-bandgap semiconductor research is multidisciplinary, incorporating elements of Photoluminescence, Molecular beam epitaxy, Heterojunction, Molecular physics and Band gap. Alexander Y. Polyakov has included themes like Metalorganic vapour phase epitaxy, Semiconductor and Penning trap in his Doping study. His Deep-level transient spectroscopy research includes elements of Fermi level and Activation energy.

His most cited work include:

  • Electrical characteristics of Au and Ag Schottky contacts on n-ZnO (172 citations)
  • Gallium antimonide device related properties (164 citations)
  • Lifetime-limiting defects in n− 4H-SiC epilayers (149 citations)

What are the main themes of his work throughout his whole career to date?

Alexander Y. Polyakov mainly focuses on Optoelectronics, Analytical chemistry, Epitaxy, Wide-bandgap semiconductor and Doping. Optoelectronics is represented through his Heterojunction, Schottky diode, Cathodoluminescence, Light-emitting diode and Diode research. The concepts of his Analytical chemistry study are interwoven with issues in Fermi level and Chemical vapor deposition.

His work is dedicated to discovering how Epitaxy, Electron beam-induced current are connected with Crystallographic defect and other disciplines. Atomic physics and Capacitance is closely connected to Deep-level transient spectroscopy in his research, which is encompassed under the umbrella topic of Wide-bandgap semiconductor. His research in Doping intersects with topics in Sheet resistance, Acceptor and Semiconductor.

He most often published in these fields:

  • Optoelectronics (47.84%)
  • Analytical chemistry (40.06%)
  • Epitaxy (24.50%)

What were the highlights of his more recent work (between 2014-2021)?

  • Optoelectronics (47.84%)
  • Light-emitting diode (7.49%)
  • Epitaxy (24.50%)

In recent papers he was focusing on the following fields of study:

His primary areas of investigation include Optoelectronics, Light-emitting diode, Epitaxy, Analytical chemistry and Electron beam-induced current. His Optoelectronics research incorporates themes from Quantum well and Transistor. His work carried out in the field of Epitaxy brings together such families of science as Sapphire, Halide, Heterojunction and Charge carrier.

The study incorporates disciplines such as Metalorganic vapour phase epitaxy, Schottky diode, Fermi level, Doping and Chemical vapor deposition in addition to Analytical chemistry. His research integrates issues of Cathodoluminescence and Deep-level transient spectroscopy in his study of Metalorganic vapour phase epitaxy. Alexander Y. Polyakov combines subjects such as Molecular physics and Condensed matter physics, Dislocation with his study of Electron beam-induced current.

Between 2014 and 2021, his most popular works were:

  • Review—Ionizing Radiation Damage Effects on GaN Devices (132 citations)
  • Deep traps in GaN-based structures as affecting the performance of GaN devices (117 citations)
  • Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage (51 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Optics
  • Optoelectronics

Analytical chemistry, Epitaxy, Optoelectronics, Electron beam-induced current and Deep-level transient spectroscopy are his primary areas of study. Alexander Y. Polyakov has researched Analytical chemistry in several fields, including Schottky diode, Fermi level, Chemical vapor deposition and Electron capture. His research investigates the link between Fermi level and topics such as Doping that cross with problems in Activation energy.

His work carried out in the field of Epitaxy brings together such families of science as Sapphire, Luminescence and Dislocation. His Optoelectronics study combines topics from a wide range of disciplines, such as High-electron-mobility transistor and Electroluminescence. His work deals with themes such as Capacitance, Ionization, Acceptor and Molecular physics, which intersect with Deep-level transient spectroscopy.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Gallium antimonide device related properties

A.G. Milnes;A.Y. Polyakov.
Solid-state Electronics (1993)

266 Citations

Electrical characteristics of Au and Ag Schottky contacts on n-ZnO

A. Y. Polyakov;N. B. Smirnov;E. A. Kozhukhova;V. I. Vdovin.
Applied Physics Letters (2003)

260 Citations

Review—Ionizing Radiation Damage Effects on GaN Devices

S. J. Pearton;F. Ren;Erin Patrick;M. E. Law.
ECS Journal of Solid State Science and Technology (2016)

220 Citations

Review of radiation damage in GaN-based materials and devices

Stephen J. Pearton;Richard Deist;Fan Ren;Lu Liu.
Journal of Vacuum Science and Technology (2013)

174 Citations

Deep traps in GaN-based structures as affecting the performance of GaN devices

Alexander Y. Polyakov;In-Hwan Lee.
Materials Science & Engineering R-reports (2015)

165 Citations

Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular beam epitaxy

F. Hamdani;M. Yeadon;David J. Smith;H. Tang.
Journal of Applied Physics (1998)

156 Citations

Lifetime-limiting defects in n− 4H-SiC epilayers

P. B. Klein;B. V. Shanabrook;S. W. Huh;A. Y. Polyakov.
Applied Physics Letters (2006)

150 Citations

Radiation effects in GaN materials and devices

Alexander Y. Polyakov;S. J. Pearton;Patrick Frenzer;Fan Ren.
Journal of Materials Chemistry C (2013)

139 Citations

Indium arsenide: a semiconductor for high speed and electro-optical devices

A.G Milnes;A.Y Polyakov.
Materials Science and Engineering B-advanced Functional Solid-state Materials (1993)

129 Citations

Properties of Si donors and persistent photoconductivity in AlGaN

A.Y. Polyakov;N.B. Smirnov;A.V. Govorkov;M.G. Mil'vidskii.
Solid-state Electronics (1998)

126 Citations

Best Scientists Citing A. Y. Polyakov

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Stephen J. Pearton

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Fan Ren

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David C. Look

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Tsunenobu Kimoto

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David P. Norton

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C. R. Abernathy

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James S. Speck

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Ian T. Ferguson

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Brent P. Gila

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Umesh K. Mishra

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Steven A. Ringel

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Profile was last updated on December 6th, 2021.
Research.com Ranking is based on data retrieved from the Microsoft Academic Graph (MAG).
The ranking d-index is inferred from publications deemed to belong to the considered discipline.

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