World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
52
Citations
9873
World Ranking
2535
National Ranking
5

Materials Science

D-Index
54
Citations
10804
World Ranking
8887
National Ranking
24

Overview

A. Y. Polyakov is affiliated with the National University of Science and Technology in the Russian Federation. Their research primarily focuses on materials science, with particular attention to energy applications. The scientist has contributed to various subfields including materials chemistry, electronic, optical and magnetic materials, renewable energy and sustainability, electrical and electronic engineering, and condensed matter physics.

The major research topics addressed by A. Y. Polyakov cover a range of semiconductor and oxide materials. These topics include Ga2O3 and related materials, ZnO doping and properties, advanced photocatalysis techniques, semiconductor materials and devices, GaN-based semiconductor devices and materials, electronic and structural properties of oxides, and perovskite materials and applications.

Among the recent papers authored or coauthored by A. Y. Polyakov are:

  • "Review-Radiation Damage in Wide and Ultra-Wide Bandgap Semiconductors," 2021, ECS Journal of Solid State Science and Technology
  • "Deep level defect states in β-, α-, and ɛ-Ga2O3 crystals and films: Impact on device performance," 2022, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • "Editors' Choice-Electrical Properties and Deep Traps in α-Ga2O3:Sn Films Grown on Sapphire by Halide Vapor Phase Epitaxy," 2020, ECS Journal of Solid State Science and Technology

A. Y. Polyakov has worked frequently with coauthors including S. J. Pearton, A.A. Vasil'ev, Ivan Shchemerov, E. B. Yakimov, and А. I. Kochkova. These collaborations reflect close ties with researchers engaged in similar topics within semiconductor materials and device physics.

The scientist's research outputs have been published extensively in several journals, with notable numbers of publications in:

  • ECS Journal of Solid State Science and Technology
  • Journal of Applied Physics
  • Journal of Alloys and Compounds
  • Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
  • Journal of Physics D Applied Physics

Best Publications

  • Review—Ionizing Radiation Damage Effects on GaN Devices

    S. J. Pearton;F. Ren;Erin Patrick;M. E. Law

  • Gallium antimonide device related properties

    A.G. Milnes;A.Y. Polyakov

  • Electrical characteristics of Au and Ag Schottky contacts on n-ZnO

    A. Y. Polyakov;N. B. Smirnov;E. A. Kozhukhova;V. I. Vdovin

  • Radiation damage effects in Ga2O3 materials and devices

    Jihyun Kim;Stephen J. Pearton;Chaker Fares;Jiancheng Yang

  • Review of radiation damage in GaN-based materials and devices

    Stephen J. Pearton;Richard Deist;Fan Ren;Lu Liu

  • Deep traps in GaN-based structures as affecting the performance of GaN devices

    Alexander Y. Polyakov;In-Hwan Lee

  • Radiation effects in GaN materials and devices

    Alexander Y. Polyakov;S. J. Pearton;Patrick Frenzer;Fan Ren

  • Lifetime-limiting defects in n− 4H-SiC epilayers

    P. B. Klein;B. V. Shanabrook;S. W. Huh;A. Y. Polyakov

  • Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular beam epitaxy

    F. Hamdani;M. Yeadon;David J. Smith;H. Tang

  • Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage

    A. Y. Polyakov;N. B. Smirnov;I. V. Shchemerov;E. B. Yakimov;E. B. Yakimov

  • Indium arsenide: a semiconductor for high speed and electro-optical devices

    A.G Milnes;A.Y Polyakov

  • Hole traps and persistent photocapacitance in proton irradiated β-Ga2O3 films doped with Si

    A. Y. Polyakov;N. B. Smirnov;I. V. Shchemerov;S. J. Pearton

  • Properties of Si donors and persistent photoconductivity in AlGaN

    A.Y. Polyakov;N.B. Smirnov;A.V. Govorkov;M.G. Mil'vidskii

  • Lateral AlxGa1-xN power rectifiers with 9.7 kV reverse breakdown voltage

    A. P. Zhang;J. W. Johnson;F. Ren;J. Han

  • Studies of the origin of the yellow luminescence band, the nature of nonradiative recombination and the origin of persistent photoconductivity in n-GaN films

    A.Y Polyakov;N.B Smirnov;A.S Usikov;A.V Govorkov

  • Electrical properties of bulk semi-insulating β-Ga2O3 (Fe)

    A. Y. Polyakov;N. B. Smirnov;I. V. Shchemerov;S. J. Pearton

  • On the origin of electrically active defects in AlGaN alloys grown by organometallic vapor phase epitaxy

    A. Y. Polyakov;M. Shin;J. A. Freitas;M. Skowronski

  • Deep centers and their spatial distribution in undoped GaN films grown by organometallic vapor phase epitaxy

    A. Y. Polyakov;N. B. Smirnov;A. V. Govorkov;M. Shin

  • Review—Radiation Damage in Wide and Ultra-Wide Bandgap Semiconductors

    S. J. Pearton;Assel Aitkaliyeva;Minghan Xian;Fan Ren

  • Proton implantation effects on electrical and recombination properties of undoped ZnO

    A. Y. Polyakov;N. B. Smirnov;A. V. Govorkov;E. A. Kozhukhova

  • Compensation and persistent photocapacitance in homoepitaxial Sn-doped β-Ga2O3

    A. Y. Polyakov;N. B. Smirnov;I. V. Shchemerov;D. Gogova

Frequent Co-Authors

Stephen J. Pearton
Stephen J. Pearton University of Florida
In-Hwan Lee
In-Hwan Lee Korea University
Fan Ren
Fan Ren University of Florida
Marek Skowronski
Marek Skowronski Carnegie Mellon University
Andrei Osinsky
Andrei Osinsky Corning (United States)
Ji Hyun Kim
Ji Hyun Kim Seoul National University
J. M. Zavada
J. M. Zavada New York University
R. G. Wilson
R. G. Wilson General Motors (United States)
C. R. Abernathy
C. R. Abernathy University of Florida
David P. Norton
David P. Norton University of Florida

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