The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where A. Y. Polyakov sits on this spectrum.
This scientist: 357 publications — 68th percentile
68% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,065 publications or more.
The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where A. Y. Polyakov sits on this spectrum.
This scientist: 52 D-Index — 64th percentile
64% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 111 D-Index or more.
A. Y. Polyakov is affiliated with the National University of Science and Technology in the Russian Federation. Their research primarily focuses on materials science, with particular attention to energy applications. The scientist has contributed to various subfields including materials chemistry, electronic, optical and magnetic materials, renewable energy and sustainability, electrical and electronic engineering, and condensed matter physics.
The major research topics addressed by A. Y. Polyakov cover a range of semiconductor and oxide materials. These topics include Ga2O3 and related materials, ZnO doping and properties, advanced photocatalysis techniques, semiconductor materials and devices, GaN-based semiconductor devices and materials, electronic and structural properties of oxides, and perovskite materials and applications.
Among the recent papers authored or coauthored by A. Y. Polyakov are:
A. Y. Polyakov has worked frequently with coauthors including S. J. Pearton, A.A. Vasil'ev, Ivan Shchemerov, E. B. Yakimov, and А. I. Kochkova. These collaborations reflect close ties with researchers engaged in similar topics within semiconductor materials and device physics.
The scientist's research outputs have been published extensively in several journals, with notable numbers of publications in:
S. J. Pearton;F. Ren;Erin Patrick;M. E. Law
A.G. Milnes;A.Y. Polyakov
A. Y. Polyakov;N. B. Smirnov;E. A. Kozhukhova;V. I. Vdovin
Jihyun Kim;Stephen J. Pearton;Chaker Fares;Jiancheng Yang
Stephen J. Pearton;Richard Deist;Fan Ren;Lu Liu
Alexander Y. Polyakov;In-Hwan Lee
Alexander Y. Polyakov;S. J. Pearton;Patrick Frenzer;Fan Ren
P. B. Klein;B. V. Shanabrook;S. W. Huh;A. Y. Polyakov
F. Hamdani;M. Yeadon;David J. Smith;H. Tang
A. Y. Polyakov;N. B. Smirnov;I. V. Shchemerov;E. B. Yakimov;E. B. Yakimov
A.G Milnes;A.Y Polyakov
A. Y. Polyakov;N. B. Smirnov;I. V. Shchemerov;S. J. Pearton
A.Y. Polyakov;N.B. Smirnov;A.V. Govorkov;M.G. Mil'vidskii
A. P. Zhang;J. W. Johnson;F. Ren;J. Han
A.Y Polyakov;N.B Smirnov;A.S Usikov;A.V Govorkov
A. Y. Polyakov;N. B. Smirnov;I. V. Shchemerov;S. J. Pearton
A. Y. Polyakov;M. Shin;J. A. Freitas;M. Skowronski
A. Y. Polyakov;N. B. Smirnov;A. V. Govorkov;M. Shin
S. J. Pearton;Assel Aitkaliyeva;Minghan Xian;Fan Ren
A. Y. Polyakov;N. B. Smirnov;A. V. Govorkov;E. A. Kozhukhova
A. Y. Polyakov;N. B. Smirnov;I. V. Shchemerov;D. Gogova
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