The scientist’s investigation covers issues in Optoelectronics, Analytical chemistry, Wide-bandgap semiconductor, Doping and Deep-level transient spectroscopy. The various areas that Alexander Y. Polyakov examines in his Optoelectronics study include High-electron-mobility transistor, Radiation damage and Epitaxy. His studies in Analytical chemistry integrate themes in fields like Ion implantation, Photocurrent and Acceptor.
His Wide-bandgap semiconductor research is multidisciplinary, incorporating elements of Photoluminescence, Molecular beam epitaxy, Heterojunction, Molecular physics and Band gap. Alexander Y. Polyakov has included themes like Metalorganic vapour phase epitaxy, Semiconductor and Penning trap in his Doping study. His Deep-level transient spectroscopy research includes elements of Fermi level and Activation energy.
Alexander Y. Polyakov mainly focuses on Optoelectronics, Analytical chemistry, Epitaxy, Wide-bandgap semiconductor and Doping. Optoelectronics is represented through his Heterojunction, Schottky diode, Cathodoluminescence, Light-emitting diode and Diode research. The concepts of his Analytical chemistry study are interwoven with issues in Fermi level and Chemical vapor deposition.
His work is dedicated to discovering how Epitaxy, Electron beam-induced current are connected with Crystallographic defect and other disciplines. Atomic physics and Capacitance is closely connected to Deep-level transient spectroscopy in his research, which is encompassed under the umbrella topic of Wide-bandgap semiconductor. His research in Doping intersects with topics in Sheet resistance, Acceptor and Semiconductor.
His primary areas of investigation include Optoelectronics, Light-emitting diode, Epitaxy, Analytical chemistry and Electron beam-induced current. His Optoelectronics research incorporates themes from Quantum well and Transistor. His work carried out in the field of Epitaxy brings together such families of science as Sapphire, Halide, Heterojunction and Charge carrier.
The study incorporates disciplines such as Metalorganic vapour phase epitaxy, Schottky diode, Fermi level, Doping and Chemical vapor deposition in addition to Analytical chemistry. His research integrates issues of Cathodoluminescence and Deep-level transient spectroscopy in his study of Metalorganic vapour phase epitaxy. Alexander Y. Polyakov combines subjects such as Molecular physics and Condensed matter physics, Dislocation with his study of Electron beam-induced current.
Analytical chemistry, Epitaxy, Optoelectronics, Electron beam-induced current and Deep-level transient spectroscopy are his primary areas of study. Alexander Y. Polyakov has researched Analytical chemistry in several fields, including Schottky diode, Fermi level, Chemical vapor deposition and Electron capture. His research investigates the link between Fermi level and topics such as Doping that cross with problems in Activation energy.
His work carried out in the field of Epitaxy brings together such families of science as Sapphire, Luminescence and Dislocation. His Optoelectronics study combines topics from a wide range of disciplines, such as High-electron-mobility transistor and Electroluminescence. His work deals with themes such as Capacitance, Ionization, Acceptor and Molecular physics, which intersect with Deep-level transient spectroscopy.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Gallium antimonide device related properties
A.G. Milnes;A.Y. Polyakov.
Solid-state Electronics (1993)
Electrical characteristics of Au and Ag Schottky contacts on n-ZnO
A. Y. Polyakov;N. B. Smirnov;E. A. Kozhukhova;V. I. Vdovin.
Applied Physics Letters (2003)
Review—Ionizing Radiation Damage Effects on GaN Devices
S. J. Pearton;F. Ren;Erin Patrick;M. E. Law.
ECS Journal of Solid State Science and Technology (2016)
Review of radiation damage in GaN-based materials and devices
Stephen J. Pearton;Richard Deist;Fan Ren;Lu Liu.
Journal of Vacuum Science and Technology (2013)
Deep traps in GaN-based structures as affecting the performance of GaN devices
Alexander Y. Polyakov;In-Hwan Lee.
Materials Science & Engineering R-reports (2015)
Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular beam epitaxy
F. Hamdani;M. Yeadon;David J. Smith;H. Tang.
Journal of Applied Physics (1998)
Lifetime-limiting defects in n− 4H-SiC epilayers
P. B. Klein;B. V. Shanabrook;S. W. Huh;A. Y. Polyakov.
Applied Physics Letters (2006)
Radiation effects in GaN materials and devices
Alexander Y. Polyakov;S. J. Pearton;Patrick Frenzer;Fan Ren.
Journal of Materials Chemistry C (2013)
Indium arsenide: a semiconductor for high speed and electro-optical devices
A.G Milnes;A.Y Polyakov.
Materials Science and Engineering B-advanced Functional Solid-state Materials (1993)
Properties of Si donors and persistent photoconductivity in AlGaN
A.Y. Polyakov;N.B. Smirnov;A.V. Govorkov;M.G. Mil'vidskii.
Solid-state Electronics (1998)
Profile was last updated on December 6th, 2021.
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