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Brent P. Gila

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 56 8399 8116 2063 1912 296 8972

Brent P. Gila publications per year

The chart shows the history of publications by Brent P. Gila between 1996 and 2019, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Brent P. Gila published across 24 years, from 1996 to 2019, averaging 12.3 papers a year. Output peaked at 36 publications in 2003. 9 of the 294 publications appeared in the last two years.

No. of publications
10 20 30
Bar chart. Horizontal axis: year, 1996 to 2019. Vertical axis: number of publications, 0 to 36. Peak 36 publications in 2003. 1996: 2 publications 1997: 1 publication 1998: 3 publications 1999: 2 publications 2000: 7 publications 2001: 12 publications 2002: 20 publications 2003: 36 publications 2004: 24 publications 2005: 21 publications 2006: 25 publications 2007: 24 publications 2008: 19 publications 2009: 14 publications 2010: 6 publications 2011: 15 publications 2012: 19 publications 2013: 9 publications 2014: 7 publications 2015: 5 publications 2016: 4 publications 2017: 10 publications 2018: 3 publications 2019: 6 publications
1996 2019

294 publications in total across all disciplines

View publications per year as a table
Brent P. Gila: publications per year, 1996 to 2019
Year Publications
1996 2
1997 1
1998 3
1999 2
2000 7
2001 12
2002 20
2003 36
2004 24
2005 21
2006 25
2007 24
2008 19
2009 14
2010 6
2011 15
2012 19
2013 9
2014 7
2015 5
2016 4
2017 10
2018 3
2019 6
Total 294
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Brent P. Gila publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Brent P. Gila sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 290–309 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 296 publications — 59th percentile

59% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593 296
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
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Brent P. Gila D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Brent P. Gila sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 56–57 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 56 D-Index — 37th percentile

37% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597 56
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
Download as CSV

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Transistor
  • Optoelectronics

His main research concerns Optoelectronics, Analytical chemistry, Wide-bandgap semiconductor, Diode and Molecular beam epitaxy. His Optoelectronics study incorporates themes from Field-effect transistor, Gate dielectric and Graphene. His Analytical chemistry study combines topics from a wide range of disciplines, such as Conductance, Ohmic contact, Gate oxide and Transmission electron microscopy.

The various areas that Brent P. Gila examines in his Wide-bandgap semiconductor study include Transistor, Electrical resistivity and conductivity and Dielectric. The Diode study combines topics in areas such as Crystallographic defect, Oxide and Annealing. His research in Molecular beam epitaxy intersects with topics in Electron cyclotron resonance, Magnetic semiconductor, Ferromagnetism and Crystallography.

His most cited work include:

  • Magnetic properties of n-GaMnN thin films (299 citations)
  • GaN-based diodes and transistors for chemical, gas, biological and pressure sensing (249 citations)
  • Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes (172 citations)

What are the main themes of his work throughout his whole career to date?

The scientist’s investigation covers issues in Optoelectronics, Analytical chemistry, Transistor, Wide-bandgap semiconductor and Diode. The concepts of his Optoelectronics study are interwoven with issues in Passivation and High-electron-mobility transistor. His research investigates the connection with High-electron-mobility transistor and areas like Gallium nitride which intersect with concerns in Aluminium nitride.

His biological study spans a wide range of topics, including Molecular beam epitaxy, Ohmic contact, Annealing and Gate oxide. Brent P. Gila combines subjects such as Electron cyclotron resonance, Thin film, Electron diffraction and Ferromagnetism with his study of Molecular beam epitaxy. His study looks at the relationship between Transistor and topics such as Semiconductor, which overlap with Nanotechnology.

He most often published in these fields:

  • Optoelectronics (62.33%)
  • Analytical chemistry (31.16%)
  • Transistor (23.63%)

What were the highlights of his more recent work (between 2012-2019)?

  • Optoelectronics (62.33%)
  • Band gap (11.99%)
  • Heterojunction (13.36%)

In recent papers he was focusing on the following fields of study:

The scientist’s investigation covers issues in Optoelectronics, Band gap, Heterojunction, X-ray photoelectron spectroscopy and Analytical chemistry. His work deals with themes such as Transistor, Gate dielectric and Passivation, which intersect with Optoelectronics. His Heterojunction research is multidisciplinary, incorporating perspectives in Semimetal and Thin-film transistor.

His studies in X-ray photoelectron spectroscopy integrate themes in fields like Valence band, Electron energy loss spectroscopy and Thin film, Atomic layer deposition. He has researched Analytical chemistry in several fields, including Sputter deposition and Dielectric. Brent P. Gila focuses mostly in the field of Wide-bandgap semiconductor, narrowing it down to matters related to Breakdown voltage and, in some cases, Time-dependent gate oxide breakdown.

Between 2012 and 2019, his most popular works were:

  • Energy band offsets of dielectrics on InGaZnO4 (36 citations)
  • Band alignment of Al 2 O 3 with (-201) β-Ga 2 O 3 (32 citations)
  • Reliability studies of AlGaN/GaN high electron mobility transistors (28 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Transistor
  • Silicon

His primary areas of study are Optoelectronics, X-ray photoelectron spectroscopy, Electron energy loss spectroscopy, Band gap and Atomic layer deposition. His study of Wide-bandgap semiconductor is a part of Optoelectronics. His research in X-ray photoelectron spectroscopy tackles topics such as Heterojunction which are related to areas like Single crystal, Contact resistance and Semimetal.

His Electron energy loss spectroscopy research incorporates elements of Valence band, Dielectric and Analytical chemistry. As part of the same scientific family, Brent P. Gila usually focuses on Dielectric, concentrating on Sputter deposition and intersecting with Passivation. His research investigates the connection between Band gap and topics such as Gate dielectric that intersect with problems in Molecular beam epitaxy, Thin-film transistor, Band offset, Amorphous silicon and Semiconductor.

Best Publications

  • Magnetic properties of n-GaMnN thin films

    G. T. Thaler;M. E. Overberg;B. Gila;R. Frazier

  • GaN-based diodes and transistors for chemical, gas, biological and pressure sensing

    S J Pearton;B S Kang;Suku Kim;F Ren

  • Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes

    S. Tongay;M. Lemaitre;X. Miao;B. Gila

  • Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors

    B. Luo;J. W. Johnson;J. Kim;R. M. Mehandru

  • Electrical transport properties of single ZnO nanorods

    Y. W. Heo;L. C. Tien;D. P. Norton;B. S. Kang

  • AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation

    R. Mehandru;B. Luo;J. Kim;F. Ren

  • Pressure-induced changes in the conductivity of AlGaN∕GaN high-electron mobility-transistor membranes

    B. S. Kang;S. Kim;F. Ren;J. W. Johnson

  • Graphene/GaN Schottky diodes: Stability at elevated temperatures

    Sefaattin Tongay;Maxime G. Lemaitre;Timo Schumann;Kara Berke

  • Hydrogen and ozone gas sensing using multiple ZnO nanorods

    B.S. Kang;Y.W. Heo;L.C. Tien;D.P. Norton

  • MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors

    Y. Irokawa;Y. Nakano;M. Ishiko;T. Kachi

  • Gd2O3/GaN metal-oxide-semiconductor field-effect transistor

    J. W. Johnson;B. Luo;F. Ren;B. P. Gila

  • Room temperature hydrogen detection using Pd-coated GaN nanowires

    Wantae Lim;J. S. Wright;B. P. Gila;Jason L. Johnson

  • GaN electronics for high power, high temperature applications

    S.J. Pearton;F. Ren;A.P. Zhang;G. Dang

  • Improved transfer of graphene for gated Schottky-junction, vertical, organic, field-effect transistors.

    Maxime G. Lemaitre;Evan P. Donoghue;Mitchell A. McCarthy;Bo Liu

  • Characteristics of MgO/GaN gate-controlled metal–oxide– semiconductor diodes

    Jihyun Kim;R. Mehandru;B. Luo;F. Ren

  • Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors

    B. S. Kang;S. Kim;J. Kim;F. Ren

  • Indication of hysteresis in AlMnN

    R. Frazier;G. Thaler;M. Overberg;B. Gila

  • AlGaN/GaN-based metal–oxide–semiconductor diode-based hydrogen gas sensor

    B. S. Kang;F. Ren;B. P. Gila;C. R. Abernathy

  • Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for GaN MOSFETs

    B.P. Gila;J.W. Johnson;R. Mehandru;B. Luo

  • pH sensor using AlGaN∕GaN high electron mobility transistors with Sc2O3 in the gate region

    B. S. Kang;H. T. Wang;F. Ren;B. P. Gila

  • Reversible barrier height changes in hydrogen-sensitive Pd/GaN and Pt/GaN diodes

    Jihyun Kim;F. Ren;B. P. Gila;C. R. Abernathy

Frequent Co-Authors

Fan Ren
Fan Ren University of Florida
Stephen J. Pearton
Stephen J. Pearton University of Florida
C. R. Abernathy
C. R. Abernathy University of Florida
Ji Hyun Kim
Ji Hyun Kim Seoul National University
David P. Norton
David P. Norton University of Florida
Ivan I. Kravchenko
Ivan I. Kravchenko Oak Ridge National Laboratory
Jenshan Lin
Jenshan Lin University of Florida
Young-Woo Heo
Young-Woo Heo Kyungpook National University
Arthur F. Hebard
Arthur F. Hebard University of Florida
Sefaattin Tongay
Sefaattin Tongay Arizona State University

External Links

Personal website of Brent P. Gila Google Scholar page

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Best Scientists Citing Brent P. Gila

Stephen J. Pearton

Stephen J. Pearton

University of Florida

Publications: 229

Fan Ren

Fan Ren

University of Florida

Publications: 197

Ji Hyun Kim

Ji Hyun Kim

Seoul National University

Publications: 47

C. R. Abernathy

C. R. Abernathy

University of Florida

Publications: 43

David P. Norton

David P. Norton

University of Florida

Publications: 42

Wen-Chau Liu

Wen-Chau Liu

National Cheng Kung University

Publications: 29

Arthur F. Hebard

Arthur F. Hebard

University of Florida

Publications: 29

Wooyoung Lee

Wooyoung Lee

Yonsei University

Publications: 20

Moon-Ho Ham

Moon-Ho Ham

Gwangju Institute of Science and Technology

Publications: 20

Jae Min Myoung

Jae Min Myoung

Yonsei University

Publications: 20

Chongmu Lee

Chongmu Lee

Inha University

Publications: 20

R. G. Wilson

R. G. Wilson

General Motors (United States)

Publications: 19

Minghwei Hong

Minghwei Hong

National Taiwan University

Publications: 19

Hadis Morkoç

Hadis Morkoç

Virginia Commonwealth University

Publications: 19

Kei May Lau

Kei May Lau

Hong Kong University of Science and Technology

Publications: 18

Ching-Ting Lee

Ching-Ting Lee

Yuan Ze University

Publications: 18

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