D-Index & Metrics Best Publications

D-Index & Metrics

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 52 Citations 7,728 225 World Ranking 5291 National Ranking 1482

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Transistor
  • Optoelectronics

His main research concerns Optoelectronics, Analytical chemistry, Wide-bandgap semiconductor, Diode and Molecular beam epitaxy. His Optoelectronics study incorporates themes from Field-effect transistor, Gate dielectric and Graphene. His Analytical chemistry study combines topics from a wide range of disciplines, such as Conductance, Ohmic contact, Gate oxide and Transmission electron microscopy.

The various areas that Brent P. Gila examines in his Wide-bandgap semiconductor study include Transistor, Electrical resistivity and conductivity and Dielectric. The Diode study combines topics in areas such as Crystallographic defect, Oxide and Annealing. His research in Molecular beam epitaxy intersects with topics in Electron cyclotron resonance, Magnetic semiconductor, Ferromagnetism and Crystallography.

His most cited work include:

  • Magnetic properties of n-GaMnN thin films (299 citations)
  • GaN-based diodes and transistors for chemical, gas, biological and pressure sensing (249 citations)
  • Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes (172 citations)

What are the main themes of his work throughout his whole career to date?

The scientist’s investigation covers issues in Optoelectronics, Analytical chemistry, Transistor, Wide-bandgap semiconductor and Diode. The concepts of his Optoelectronics study are interwoven with issues in Passivation and High-electron-mobility transistor. His research investigates the connection with High-electron-mobility transistor and areas like Gallium nitride which intersect with concerns in Aluminium nitride.

His biological study spans a wide range of topics, including Molecular beam epitaxy, Ohmic contact, Annealing and Gate oxide. Brent P. Gila combines subjects such as Electron cyclotron resonance, Thin film, Electron diffraction and Ferromagnetism with his study of Molecular beam epitaxy. His study looks at the relationship between Transistor and topics such as Semiconductor, which overlap with Nanotechnology.

He most often published in these fields:

  • Optoelectronics (62.33%)
  • Analytical chemistry (31.16%)
  • Transistor (23.63%)

What were the highlights of his more recent work (between 2012-2019)?

  • Optoelectronics (62.33%)
  • Band gap (11.99%)
  • Heterojunction (13.36%)

In recent papers he was focusing on the following fields of study:

The scientist’s investigation covers issues in Optoelectronics, Band gap, Heterojunction, X-ray photoelectron spectroscopy and Analytical chemistry. His work deals with themes such as Transistor, Gate dielectric and Passivation, which intersect with Optoelectronics. His Heterojunction research is multidisciplinary, incorporating perspectives in Semimetal and Thin-film transistor.

His studies in X-ray photoelectron spectroscopy integrate themes in fields like Valence band, Electron energy loss spectroscopy and Thin film, Atomic layer deposition. He has researched Analytical chemistry in several fields, including Sputter deposition and Dielectric. Brent P. Gila focuses mostly in the field of Wide-bandgap semiconductor, narrowing it down to matters related to Breakdown voltage and, in some cases, Time-dependent gate oxide breakdown.

Between 2012 and 2019, his most popular works were:

  • Energy band offsets of dielectrics on InGaZnO4 (36 citations)
  • Band alignment of Al 2 O 3 with (-201) β-Ga 2 O 3 (32 citations)
  • Reliability studies of AlGaN/GaN high electron mobility transistors (28 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Transistor
  • Silicon

His primary areas of study are Optoelectronics, X-ray photoelectron spectroscopy, Electron energy loss spectroscopy, Band gap and Atomic layer deposition. His study of Wide-bandgap semiconductor is a part of Optoelectronics. His research in X-ray photoelectron spectroscopy tackles topics such as Heterojunction which are related to areas like Single crystal, Contact resistance and Semimetal.

His Electron energy loss spectroscopy research incorporates elements of Valence band, Dielectric and Analytical chemistry. As part of the same scientific family, Brent P. Gila usually focuses on Dielectric, concentrating on Sputter deposition and intersecting with Passivation. His research investigates the connection between Band gap and topics such as Gate dielectric that intersect with problems in Molecular beam epitaxy, Thin-film transistor, Band offset, Amorphous silicon and Semiconductor.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Magnetic properties of n-GaMnN thin films

G. T. Thaler;M. E. Overberg;B. Gila;R. Frazier.
Applied Physics Letters (2002)

439 Citations

GaN-based diodes and transistors for chemical, gas, biological and pressure sensing

S J Pearton;B S Kang;Suku Kim;F Ren.
Journal of Physics: Condensed Matter (2004)

363 Citations

Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes

S. Tongay;M. Lemaitre;X. Miao;B. Gila.
Physical Review X (2012)

318 Citations

Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors

B. Luo;J. W. Johnson;J. Kim;R. M. Mehandru.
Applied Physics Letters (2002)

208 Citations

Electrical transport properties of single ZnO nanorods

Y. W. Heo;L. C. Tien;D. P. Norton;B. S. Kang.
Applied Physics Letters (2004)

206 Citations

Pressure-induced changes in the conductivity of AlGaN∕GaN high-electron mobility-transistor membranes

B. S. Kang;S. Kim;F. Ren;J. W. Johnson.
Applied Physics Letters (2004)

157 Citations

AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation

R. Mehandru;B. Luo;J. Kim;F. Ren.
Applied Physics Letters (2003)

155 Citations

Gd2O3/GaN metal-oxide-semiconductor field-effect transistor

J. W. Johnson;B. Luo;F. Ren;B. P. Gila.
Applied Physics Letters (2000)

144 Citations

MgO/p-GaN enhancement mode metal-oxide semiconductor field-effect transistors

Y. Irokawa;Y. Nakano;M. Ishiko;T. Kachi.
Applied Physics Letters (2004)

138 Citations

Hydrogen and ozone gas sensing using multiple ZnO nanorods

B.S. Kang;Y.W. Heo;L.C. Tien;D.P. Norton.
Applied Physics A (2005)

133 Citations

Best Scientists Citing Brent P. Gila

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Stephen J. Pearton

University of Florida

Publications: 229

Fan Ren

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University of Florida

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Ji Hyun Kim

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C. R. Abernathy

C. R. Abernathy

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David P. Norton

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Arthur F. Hebard

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Minghwei Hong

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Kei May Lau

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Oleg Lupan

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J. M. Zavada

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Profile was last updated on December 6th, 2021.
Research.com Ranking is based on data retrieved from the Microsoft Academic Graph (MAG).
The ranking d-index is inferred from publications deemed to belong to the considered discipline.

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