World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
85
Citations
35463
World Ranking
2124
National Ranking
628

Sefaattin Tongay publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Sefaattin Tongay sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 335 publications — 67th percentile

67% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Sefaattin Tongay D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Sefaattin Tongay sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 85 D-Index — 84th percentile

84% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Sefaattin Tongay is affiliated with Arizona State University in the United States. Their research primarily spans materials science, engineering, and physics and astronomy. In particular, a significant portion of their work focuses on materials chemistry, electrical and electronic engineering, and atomic and molecular physics and optics.

Their research topics include:

  • 2D Materials and Applications
  • Perovskite Materials and Applications
  • Graphene research and applications
  • MXene and MAX Phase Materials
  • Strong Light-Matter Interactions
  • Quantum and electron transport phenomena
  • Chalcogenide Semiconductor Thin Films

Sefaattin Tongay has published extensively in several scientific venues. The most frequent publication venues include:

  • arXiv (Cornell University)
  • Nature Communications
  • Nano Letters
  • ACS Nano
  • Advanced Materials

Some of their recent papers are:

  • "The Magnetic Genome of Two-Dimensional van der Waals Materials" (2022, ACS Nano)
  • "Imaging two-dimensional generalized Wigner crystals" (2021, Nature)
  • "Room-Temperature Synthesis of 2D Janus Crystals and their Heterostructures" (2020, Advanced Materials)
  • "Quantum properties and applications of 2D Janus crystals and their superlattices" (2020, Applied Physics Reviews)
  • "Intralayer charge-transfer moiré excitons in van der Waals superlattices" (2022, Nature)

The scientist has collaborated frequently with several co-authors, among whom are:

  • Takashi Taniguchi
  • Kenji Watanabe
  • Mark Blei
  • Renee Sailus
  • Mohammed Sayyad

Best Publications

  • Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures

    Xiaoping Hong;Jonghwan Kim;Su Fei Shi;Yu Zhang

  • Band offsets and heterostructures of two-dimensional semiconductors

    Jun Kang;Sefaattin Tongay;Jian Zhou;Jingbo Li

  • Thermally driven crossover from indirect toward direct bandgap in 2D Semiconductors: MoSe2 versus MoS2

    Sefaattin Tongay;Jian Zhou;Can Ataca;Kelvin Lo

  • Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons

    Sefaattin Tongay;Joonki Suh;Joonki Suh;Can Ataca;Wen Fan

  • Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling

    Sefaattin Tongay;Sefaattin Tongay;Hasan Sahin;Changhyun Ko;Alex Luce

  • High Efficiency Graphene Solar Cells by Chemical Doping

    Xiaochang Miao;Sefaattin Tongay;Maureen K. Petterson;Kara Berke

  • Observation of moiré excitons in WSe2/WS2 heterostructure superlattices.

    Chenhao Jin;Emma C. Regan;Aiming Yan;Aiming Yan;M. Iqbal Bakti Utama

  • Tuning Interlayer Coupling in Large-Area Heterostructures with CVD-Grown MoS2 and WS2 Monolayers

    Sefaattin Tongay;Wen Fan;Wen Fan;Jun Kang;Joonsuk Park

  • Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating.

    Sefaattin Tongay;Jian Zhou;Can Ataca;Jonathan Liu

  • Doping against the native propensity of MoS2: degenerate hole doping by cation substitution.

    Joonki Suh;Tae Eon Park;Der Yuh Lin;Deyi Fu

  • Observation of Moir'e Excitons in WSe2/WS2 Heterostructure Superlattices

    Chenhao Jin;Emma C. Regan;Aiming Yan;M. Iqbal Bakti Utama

  • Excitonic Linewidth Approaching the Homogeneous Limit in MoS 2 -Based van der Waals Heterostructures

    F. Cadiz;E. Courtade;C. Robert;G. Wang

  • The Magnetic Genome of Two-Dimensional van der Waals Materials

    Unknown

  • Anomalous Raman spectra and thickness-dependent electronic properties of WSe2

    H. Sahin;S. Tongay;S. Horzum;S. Horzum;W. Fan

  • Exciton radiative lifetime in transition metal dichalcogenide monolayers

    Cédric Robert;David Lagarde;Fabian Cadiz;Gang Wang

  • Enhanced Light Emission from Large-Area Monolayer MoS2 Using Plasmonic Nanodisc Arrays

    Serkan Butun;Sefaattin Tongay;Koray Aydin

  • Tuning the optical, magnetic, and electrical properties of ReSe2 by nanoscale strain engineering.

    Shengxue Yang;Cong Wang;Hasan Sahin;Hui Chen

  • Elastic properties of chemical-vapor-deposited monolayer MoS2, WS2, and their bilayer heterostructures.

    Kai Liu;Qimin Yan;Michelle Chen;Wen Fan;Wen Fan

  • Scalable enhancement of graphene oxide properties by thermally driven phase transformation

    Priyank V. Kumar;Neelkanth M. Bardhan;Sefaattin Tongay;Junqiao Wu

  • Anisotropic in-plane thermal conductivity of black phosphorus nanoribbons at temperatures higher than 100 K

    Sangwook Lee;Fan Yang;Joonki Suh;Sijie Yang

  • Excitonic linewidth approaching the homogeneous limit in MoS2 based van der Waals heterostructures : accessing spin-valley dynamics

    F. Cadiz;E. Courtade;C. Robert;G. Wang

  • Optical detection of Mott and generalized Wigner crystal states in WSe2/WS2 moiré superlattices

    Emma C. Regan;Danqing Wang;Chenhao Jin;M. Iqbal Bakti Utama

Frequent Co-Authors

Junqiao Wu
Junqiao Wu University of California, Berkeley
Kenji Watanabe
Kenji Watanabe National Institute for Materials Science
Arthur F. Hebard
Arthur F. Hebard University of Florida
Feng Wang
Feng Wang University of California, Berkeley
Takashi Taniguchi
Takashi Taniguchi National Institute for Materials Science
Bin Chen
Bin Chen Northwestern University
Alex Zettl
Alex Zettl University of California, Berkeley
Jingbo Li
Jingbo Li South China Normal University
Sven Höfling
Sven Höfling University of Würzburg
Kai Liu
Kai Liu Tsinghua University

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