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Materials Science
USA
2026

D-Index & Metrics

Materials Science

D-Index
138
Citations
115479
World Ranking
244
National Ranking
100

Tony F. Heinz publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Tony F. Heinz sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 633 publications — 93rd percentile

93% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Tony F. Heinz D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Tony F. Heinz sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 138 D-Index — 98th percentile

98% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2026 - Research.com Materials Science in United States Leader Award
  • 2025 - Research.com Materials Science in United States Leader Award
  • 2022 - Research.com Materials Science in United States Leader Award

Overview

Tony F. Heinz is affiliated with Stanford University in the United States. Their research primarily focuses on the fields of Materials Science, Physics and Astronomy, and Engineering. Within these broad areas, their work delves into subfields such as Materials Chemistry, Atomic and Molecular Physics and Optics, Electrical and Electronic Engineering, Biomedical Engineering, and Civil and Structural Engineering.

The main topics Tony F. Heinz has contributed to include:

  • 2D Materials and Applications
  • Graphene research and applications
  • Perovskite Materials and Applications
  • MXene and MAX Phase Materials
  • Laser-Matter Interactions and Applications
  • Diamond and Carbon-based Materials Research
  • Spectroscopy and Quantum Chemical Studies

Throughout their career, the scientist has published extensively. Frequent publication venues for their work include:

  • arXiv (Cornell University)
  • Nano Letters
  • Conference on Lasers and Electro-Optics
  • ACS Nano
  • Nature

Tony F. Heinz has collaborated frequently with various researchers, notable among them are:

  • Jenny Hu
  • Amalya C. Johnson
  • Takashi Taniguchi
  • Kenji Watanabe
  • Shambhu Ghimire

Some of their recent scientific papers include:

  • "Revealing multiple classes of stable quantum emitters in hexagonal boron nitride with correlated optical and electron microscopy," 2020, Nature Materials
  • "Signatures of moiré trions in WSe2/MoSe2 heterobilayers," 2021, Nature
  • "Direct observation of ultrafast hydrogen bond strengthening in liquid water," 2021, Nature
  • "Optical absorption of interlayer excitons in transition-metal dichalcogenide heterostructures," 2022, Science
  • "Structure of the moiré exciton captured by imaging its electron and hole," 2022, Nature

Best Publications

  • Atomically thin MoS2: a new direct-gap semiconductor

    Kin Fai Mak;Changgu Lee;James Hone;Jie Shan

  • Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

    Sheneve Z. Butler;Shawna M. Hollen;Linyou Cao;Yi Cui;Yi Cui

  • Control of valley polarization in monolayer MoS2 by optical helicity

    Kin Fai Mak;Keliang He;Jie Shan;Tony F. Heinz

  • Anomalous lattice vibrations of single- and few-layer MoS2.

    Changgu Lee;Hugen Yan;Louis E. Brus;Tony F. Heinz

  • Tightly bound trions in monolayer MoS2

    Kin Fai Mak;Keliang He;Changgu Lee;Gwan Hyoung Lee

  • Spin and pseudospins in layered transition metal dichalcogenides

    Xiaodong Xu;Wang Yao;Di Xiao;Tony F. Heinz

  • Observation of tightly bound trions in monolayer MoS2

    Kin Fai Mak;Keliang He;Changgu Lee;Gwan Hyoung Lee

  • Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS 2

    Alexey Chernikov;Timothy C. Berkelbach;Heather M. Hill;Albert Rigosi

  • Atomically thin p–n junctions with van der Waals heterointerfaces

    Chul Ho Lee;Chul Ho Lee;Gwan Hyoung Lee;Arend M. Van Der Zande;Wenchao Chen

  • Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide

    Arend M. Van Der Zande;Pinshane Y. Huang;Daniel A. Chenet;Timothy C. Berkelbach

  • Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics.

    Wenzhuo Wu;Lei Wang;Yilei Li;Fan Zhang

  • Grains and grain boundaries in highly crystalline monolayer molybdenum disulfide

    Arend M. van der Zande;Pinshane Y. Huang;Daniel A. Chenet;Timothy C. Berkelbach

  • Measurement of the optical conductivity of graphene.

    Kin Fai Mak;Matthew Y. Sfeir;Yang Wu;Chun Hung Lui

  • Colloquium : Excitons in atomically thin transition metal dichalcogenides

    Gang Wang;Alexey Chernikov;Mikhail M. Glazov;Tony F. Heinz

  • The optical resonances in carbon nanotubes arise from excitons

    Feng Wang;Gordana Dukovic;Louis E. Brus;Tony F. Heinz

  • Carrier dynamics in semiconductors studied with time-resolved terahertz spectroscopy

    Ronald Ulbricht;Euan Hendry;Jie Shan;Tony F. Heinz

  • Polaritons in layered two-dimensional materials

    Tony Low;Andrey Chaves;Joshua D. Caldwell;Anshuman Kumar;Anshuman Kumar

  • Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides: MoS 2 , Mo S e 2 , WS 2 , and WS e 2

    Yilei Li;Alexey Chernikov;Xian Zhang;Albert Rigosi

  • Chip-integrated ultrafast graphene photodetector with high responsivity

    Xuetao Gan;Ren-Jye Shiue;Yuanda Gao;Inanc Meric

  • Probing symmetry properties of few-layer MoS2 and h-BN by optical second-harmonic generation.

    Yilei Li;Yi Rao;Kin Fai Mak;Yumeng You

  • Performance of monolayer graphene nanomechanical resonators with electrical readout

    Changyao Chen;Sami Rosenblatt;Kirill I. Bolotin;William Kalb

Frequent Co-Authors

James Hone
James Hone Columbia University
Louis E. Brus
Louis E. Brus Columbia University
Feng Wang
Feng Wang University of California, Berkeley
Jie Shan
Jie Shan Cornell University
Kin Fai Mak
Kin Fai Mak Cornell University
Matthew Y. Sfeir
Matthew Y. Sfeir City University of New York
Philip Kim
Philip Kim Harvard University
Ajay Nahata
Ajay Nahata University of Utah
Mark S. Hybertsen
Mark S. Hybertsen Brookhaven National Laboratory
Mischa Bonn
Mischa Bonn Max Planck Institute for Polymer Research

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