World's Best Scientists 2026 revealed!
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Lain-Jong Li
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Materials Science
Singapore
2026
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Materials Science
China
2025

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 140 231 221 6 6 602 91225

Lain-Jong Li publications per year

The chart shows the history of publications by Lain-Jong Li between 1997 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Lain-Jong Li published across 29 years, from 1997 to 2025, averaging 21.7 papers a year. Output peaked at 53 publications in 2016. 42 of the 629 publications appeared in the last two years.

No. of publications
10 20 30 40 50
Bar chart. Horizontal axis: year, 1997 to 2025. Vertical axis: number of publications, 0 to 53. Peak 53 publications in 2016. 1997: 4 publications 1998: 3 publications 1999: 0 publications 2000: 0 publications 2001: 2 publications 2002: 1 publication 2003: 0 publications 2004: 10 publications 2005: 5 publications 2006: 3 publications 2007: 14 publications 2008: 19 publications 2009: 22 publications 2010: 23 publications 2011: 24 publications 2012: 26 publications 2013: 47 publications 2014: 44 publications 2015: 40 publications 2016: 53 publications 2017: 51 publications 2018: 50 publications 2019: 41 publications 2020: 33 publications 2021: 36 publications 2022: 20 publications 2023: 16 publications 2024: 14 publications 2025: 28 publications
1997 2025

629 publications in total across all disciplines

View publications per year as a table
Lain-Jong Li: publications per year, 1997 to 2025
Year Publications
1997 4
1998 3
1999 0
2000 0
2001 2
2002 1
2003 0
2004 10
2005 5
2006 3
2007 14
2008 19
2009 22
2010 23
2011 24
2012 26
2013 47
2014 44
2015 40
2016 53
2017 51
2018 50
2019 41
2020 33
2021 36
2022 20
2023 16
2024 14
2025 28
Total 629
Download as CSV

Lain-Jong Li publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Lain-Jong Li sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 590–609 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 602 publications — 92nd percentile

92% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103 602
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
Download as CSV

Lain-Jong Li D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Lain-Jong Li sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 140–141 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 140 D-Index — 98th percentile

98% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12 140
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
Download as CSV

Research.com Recognitions

  • 2026 - Research.com Materials Science in Singapore Leader Award
  • 2025 - Research.com Materials Science in China Leader Award
  • 2022 - Research.com Materials Science in China Leader Award

Overview

Lain-Jong Li is affiliated with the University of Hong Kong in China and focuses on research primarily within Materials Science and Engineering.

Their work spans several specific subfields, including Materials Chemistry, Electrical and Electronic Engineering, Biomedical Engineering, Renewable Energy, Sustainability and the Environment, and Atomic and Molecular Physics, and Optics.

The main topics of Lain-Jong Li's research include:

  • 2D Materials and Applications
  • Graphene research and applications
  • Perovskite Materials and Applications
  • MXene and MAX Phase Materials
  • Ferroelectric and Negative Capacitance Devices
  • Advanced Memory and Neural Computing
  • Electronic and Structural Properties of Oxides

Lain-Jong Li has published extensively in notable scientific venues. The frequent publication journals include:

  • ACS Nano
  • Nature Communications
  • Nano Letters
  • Advanced Materials
  • Nature

Some of the recent published papers are:

  • "Ultralow contact resistance between semimetal and monolayer semiconductors," 2021, Nature
  • "Transistors based on two-dimensional materials for future integrated circuits," 2021, Nature Electronics
  • "Strain engineering and epitaxial stabilization of halide perovskites," 2020, Nature
  • "Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111)," 2020, Nature
  • "Recent Progress on Two-Dimensional Materials," 2021, Acta Physico-Chimica Sinica

The frequent co-authors collaborating with Lain-Jong Li include:

  • Vincent Tung
  • Yi Wan
  • Areej Aljarb
  • Wen-Hao Chang
  • Jing-Kai Huang

Best Publications

  • The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

    Manishkumar Chhowalla;Hyeon Suk Shin;Goki Eda;Lain Jong Li

  • Synthesis of Large‐Area MoS2 Atomic Layers with Chemical Vapor Deposition

    Yi-Hsien Lee;Xin-Quan Zhang;Wenjing Zhang;Mu-Tung Chang

  • Janus monolayers of transition metal dichalcogenides

    Ang Yu Lu;Hanyu Zhu;Jun Xiao;Chih Piao Chuu

  • Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates

    Keng Ku Liu;Wenjing Zhang;Yi Hsien Lee;Yu Chuan Lin

  • Integrated Circuits Based on Bilayer MoS2 Transistors

    Han Wang;Lili Yu;Yi-Hsien Lee;Yi-Hsien Lee;Yumeng Shi

  • Graphene and two-dimensional materials for silicon technology.

    Deji Akinwande;Cedric Huyghebaert;Ching-Hua Wang;Martha I. Serna

  • A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging

    K. Mistry;C. Allen;C. Auth;B. Beattie

  • Monolayer MoS2 Heterojunction Solar Cells

    Meng-Lin Tsai;Meng-Lin Tsai;Sheng-Han Su;Sheng-Han Su;Jan-Kai Chang;Dung-Sheng Tsai

  • Synthesis of Few-Layer Hexagonal Boron Nitride Thin Film by Chemical Vapor Deposition

    Yumeng Shi;Christoph Hamsen;Christoph Hamsen;Xiaoting Jia;Ki Kang Kim

  • Ultralow contact resistance between semimetal and monolayer semiconductors.

    Pin-Chun Shen;Cong Su;Yuxuan Lin;Yuxuan Lin;Ang-Sheng Chou;Ang-Sheng Chou

  • Large-area synthesis of highly crystalline WSe2 monolayers and device applications

    Jing Kai Huang;Jiang Pu;Chang Lung Hsu;Ming Hui Chiu

  • High-Quality Thin Graphene Films from Fast Electrochemical Exfoliation

    Ching Yuan Su;Ang Yu Lu;Ang Yu Lu;Yanping Xu;Fu Rong Chen

  • Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface

    Ming Yang Li;Yumeng Shi;Chia Chin Cheng;Li Syuan Lu

  • van der Waals Epitaxy of MoS2 Layers Using Graphene As Growth Templates

    Yumeng Shi;Wu Zhou;Wu Zhou;Ang-Yu Lu;Wenjing Fang

  • Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures

    Wenjing Zhang;Chih Piao Chuu;Jing Kai Huang;Chang Hsiao Chen

  • High-gain phototransistors based on a CVD MoS₂ monolayer.

    Wenjing Zhang;Jing Kai Huang;Chang Hsiao Chen;Yung Huang Chang

  • Large-Area Aiming Synthesis of WSe2 Monolayers

    Jing-Kai Huang;Jiang Pu;Chih-Piao Chuu;Chang-Lung Hsu

  • Highly flexible MoS2 thin-film transistors with ion gel dielectrics.

    Jiang Pu;Yohei Yomogida;Keng Ku Liu;Lain Jong Li

  • Recent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques

    Yumeng Shi;Henan Li;Lain Jong Li

  • Transistors based on two-dimensional materials for future integrated circuits

    Saptarshi Das;Amritanand Sebastian;Eric Pop;Connor J. McClellan

  • Wafer-Scale MoS2 Thin Layers Prepared by MoO3 Sulfurization

    Yu Chuan Lin;Wenjing Zhang;Jing Kai Huang;Jing Kai Huang;Keng Ku Liu

  • Highly Efficient Electrocatalytic Hydrogen Production by MoSx Grown on Graphene‐Protected 3D Ni Foams

    Yung Huang Chang;Cheng Te Lin;Tzu Yin Chen;Chang Lung Hsu

Frequent Co-Authors

Yumeng Shi
Yumeng Shi Shenzhen University
Wen-Hao Chang
Wen-Hao Chang National Yang Ming Chiao Tung University
Wenjing Zhang
Wenjing Zhang East China University of Science and Technology
Cheng-Te Lin
Cheng-Te Lin Chinese Academy of Sciences
Taishi Takenobu
Taishi Takenobu Nagoya University
Chih-Wei Chu
Chih-Wei Chu Academia Sinica
Yuan Chen
Yuan Chen University of Sydney
Kung-Hwa Wei
Kung-Hwa Wei National Yang Ming Chiao Tung University
Yi-Hsien Lee
Yi-Hsien Lee National Tsing Hua University
Mary B. Chan-Park
Mary B. Chan-Park Nanyang Technological University

External Links

Personal website of Lain-Jong Li Google Scholar page

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Best Scientists Citing Lain-Jong Li

Kenji Watanabe

Kenji Watanabe

National Institute for Materials Science

Publications: 156

Takashi Taniguchi

Takashi Taniguchi

National Institute for Materials Science

Publications: 139

Wei Huang

Wei Huang

Northwestern Polytechnical University

Publications: 129

Hua Zhang

Hua Zhang

City University of Hong Kong

Publications: 129

Pulickel M. Ajayan

Pulickel M. Ajayan

Rice University

Publications: 121

Han Zhang

Han Zhang

Shenzhen University

Publications: 110

Martin Pumera

Martin Pumera

Brno University of Technology

Publications: 109

Mauricio Terrones

Mauricio Terrones

Pennsylvania State University

Publications: 108

Zheng Liu

Zheng Liu

Nanyang Technological University

Publications: 100

Young Hee Lee

Young Hee Lee

Sungkyunkwan University

Publications: 94

Zhongfan Liu

Zhongfan Liu

Peking University

Publications: 88

Joshua A. Robinson

Joshua A. Robinson

Pennsylvania State University

Publications: 87

Jing Kong

Jing Kong

MIT

Publications: 83

Hui-Ming Cheng

Hui-Ming Cheng

Shenzhen Institutes of Advanced Technology

Publications: 74

Tianyou Zhai

Tianyou Zhai

Huazhong University of Science and Technology

Publications: 72

Jun Lou

Jun Lou

Rice University

Publications: 72

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Debin Shan

Debin Shan

Harbin Institute of Technology

Yong-Hyun Kim

Yong-Hyun Kim

Korea Advanced Institute of Science and Technology

Michael D. MacNeil

Michael D. MacNeil

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Joachim Ullrich

Joachim Ullrich

Physikalisch-Technische Bundesanstalt

Stephen W. Scheff

Stephen W. Scheff

University of Kentucky

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Miriam L. Greenberg

Wayne State University

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Dragan Gasevic

Monash University

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William H. Hildebrand

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