2026 Lain-Jong Li: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	140	231	222	7	7	602	91225

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Materials Science

140

231

222

602

91225

Research.com Recognitions

2026 - Research.com Materials Science in Singapore Leader Award
2025 - Research.com Materials Science in China Leader Award
2022 - Research.com Materials Science in China Leader Award

Overview

Lain-Jong Li is affiliated with the University of Hong Kong in China and focuses on research primarily within Materials Science and Engineering.

Their work spans several specific subfields, including Materials Chemistry, Electrical and Electronic Engineering, Biomedical Engineering, Renewable Energy, Sustainability and the Environment, and Atomic and Molecular Physics, and Optics.

The main topics of Lain-Jong Li's research include:

2D Materials and Applications
Graphene research and applications
Perovskite Materials and Applications
MXene and MAX Phase Materials
Ferroelectric and Negative Capacitance Devices
Advanced Memory and Neural Computing
Electronic and Structural Properties of Oxides

Lain-Jong Li has published extensively in notable scientific venues. The frequent publication journals include:

ACS Nano
Nature Communications
Nano Letters
Advanced Materials
Nature

Some of the recent published papers are:

"Ultralow contact resistance between semimetal and monolayer semiconductors," 2021, Nature
"Transistors based on two-dimensional materials for future integrated circuits," 2021, Nature Electronics
"Strain engineering and epitaxial stabilization of halide perovskites," 2020, Nature
"Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111)," 2020, Nature
"Recent Progress on Two-Dimensional Materials," 2021, Acta Physico-Chimica Sinica

The frequent co-authors collaborating with Lain-Jong Li include:

Vincent Tung
Yi Wan
Areej Aljarb
Wen-Hao Chang
Jing-Kai Huang

Best Publications

The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

Manishkumar Chhowalla;Hyeon Suk Shin;Goki Eda;Lain Jong Li

10247
Citations
Synthesis of Large‐Area MoS2 Atomic Layers with Chemical Vapor Deposition

Yi-Hsien Lee;Xin-Quan Zhang;Wenjing Zhang;Mu-Tung Chang

3867
Citations
Janus monolayers of transition metal dichalcogenides

Ang Yu Lu;Hanyu Zhu;Jun Xiao;Chih Piao Chuu

2574
Citations
Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates

Keng Ku Liu;Wenjing Zhang;Yi Hsien Lee;Yu Chuan Lin

2319
Citations
Integrated Circuits Based on Bilayer MoS2 Transistors

Han Wang;Lili Yu;Yi-Hsien Lee;Yi-Hsien Lee;Yumeng Shi

1995
Citations
Graphene and two-dimensional materials for silicon technology.

Deji Akinwande;Cedric Huyghebaert;Ching-Hua Wang;Martha I. Serna

1568
Citations
A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging

K. Mistry;C. Allen;C. Auth;B. Beattie

1547
Citations
Monolayer MoS2 Heterojunction Solar Cells

Meng-Lin Tsai;Meng-Lin Tsai;Sheng-Han Su;Sheng-Han Su;Jan-Kai Chang;Dung-Sheng Tsai

1370
Citations
Synthesis of Few-Layer Hexagonal Boron Nitride Thin Film by Chemical Vapor Deposition

Yumeng Shi;Christoph Hamsen;Christoph Hamsen;Xiaoting Jia;Ki Kang Kim

1360
Citations
Ultralow contact resistance between semimetal and monolayer semiconductors.

Pin-Chun Shen;Cong Su;Yuxuan Lin;Yuxuan Lin;Ang-Sheng Chou;Ang-Sheng Chou

1227
Citations
Large-area synthesis of highly crystalline WSe2 monolayers and device applications

Jing Kai Huang;Jiang Pu;Chang Lung Hsu;Ming Hui Chiu

1197
Citations
High-Quality Thin Graphene Films from Fast Electrochemical Exfoliation

Ching Yuan Su;Ang Yu Lu;Ang Yu Lu;Yanping Xu;Fu Rong Chen

1172
Citations
Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface

Ming Yang Li;Yumeng Shi;Chia Chin Cheng;Li Syuan Lu

1144
Citations
van der Waals Epitaxy of MoS2 Layers Using Graphene As Growth Templates

Yumeng Shi;Wu Zhou;Wu Zhou;Ang-Yu Lu;Wenjing Fang

1140
Citations
Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures

Wenjing Zhang;Chih Piao Chuu;Jing Kai Huang;Chang Hsiao Chen

1137
Citations
High-gain phototransistors based on a CVD MoS₂ monolayer.

Wenjing Zhang;Jing Kai Huang;Chang Hsiao Chen;Yung Huang Chang

1118
Citations
Large-Area Aiming Synthesis of WSe2 Monolayers

Jing-Kai Huang;Jiang Pu;Chih-Piao Chuu;Chang-Lung Hsu

1022
Citations
Highly flexible MoS2 thin-film transistors with ion gel dielectrics.

Jiang Pu;Yohei Yomogida;Keng Ku Liu;Lain Jong Li

959
Citations
Recent advances in controlled synthesis of two-dimensional transition metal dichalcogenides via vapour deposition techniques

Yumeng Shi;Henan Li;Lain Jong Li

899
Citations
Transistors based on two-dimensional materials for future integrated circuits

Saptarshi Das;Amritanand Sebastian;Eric Pop;Connor J. McClellan

870
Citations
Wafer-Scale MoS2 Thin Layers Prepared by MoO3 Sulfurization

Yu Chuan Lin;Wenjing Zhang;Jing Kai Huang;Jing Kai Huang;Keng Ku Liu

832
Citations
Highly Efficient Electrocatalytic Hydrogen Production by MoSx Grown on Graphene‐Protected 3D Ni Foams

Yung Huang Chang;Cheng Te Lin;Tzu Yin Chen;Chang Lung Hsu

776
Citations