World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
50
Citations
23515
World Ranking
10054
National Ranking
121

Yi-Hsien Lee publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Yi-Hsien Lee sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 142 publications — 12th percentile

12% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Yi-Hsien Lee D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Yi-Hsien Lee sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 50 D-Index — 22nd percentile

22% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Yi-Hsien Lee is affiliated with National Tsing Hua University in Taiwan. Their primary research areas lie within Materials Science and Engineering, focusing extensively on Materials Chemistry, Electrical and Electronic Engineering, and Atomic and Molecular Physics, and Optics. The body of work also incorporates Electronic, Optical and Magnetic Materials as well as Biomedical Engineering.

The scientist's investigations cover several key topics, including:

  • 2D Materials and Applications
  • Perovskite Materials and Applications
  • Graphene Research and Applications
  • Mechanical and Optical Resonators
  • Quantum Dots Synthesis and Properties
  • MXene and MAX Phase Materials
  • Chalcogenide Semiconductor Thin Films

Yi-Hsien Lee has contributed numerous publications in several noted scientific journals. Frequent publication venues include:

  • ACS Nano
  • Nano Letters
  • Nanoscale Research Letters
  • Advanced Materials
  • Small

Some recent representative papers authored or coauthored by Lee are:

  • Nonlinear valley phonon scattering under the strong coupling regime, 2021, Nature Materials
  • Epitaxial Aluminum Surface-Enhanced Raman Spectroscopy Substrates for Large-Scale 2D Material Characterization, 2020, ACS Nano
  • Tuning of Two-Dimensional Plasmon-Exciton Coupling in Full Parameter Space: A Polaritonic Non-Hermitian System, 2021, Nano Letters
  • Epitaxial aluminum plasmonics covering full visible spectrum, 2020, Nanophotonics
  • Thermal deformation and economic analysis of a multiobject cooling system for spindles with varied coolant volume control, 2023, The International Journal of Advanced Manufacturing Technology

Yi-Hsien Lee regularly collaborates with other researchers. Frequent coauthors include Chun-An Chen, Yu-Ting Lin, Xinquan Zhang, Shang-Fan Lee, and Soniya S. Raja.

Best Publications

  • Synthesis of Large‐Area MoS2 Atomic Layers with Chemical Vapor Deposition

    Yi-Hsien Lee;Xin-Quan Zhang;Wenjing Zhang;Mu-Tung Chang

  • Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates

    Keng Ku Liu;Wenjing Zhang;Yi Hsien Lee;Yu Chuan Lin

  • Integrated Circuits Based on Bilayer MoS2 Transistors

    Han Wang;Lili Yu;Yi-Hsien Lee;Yi-Hsien Lee;Yumeng Shi

  • Strong light-matter coupling in two-dimensional atomic crystals

    Xiaoze Liu;Xiaoze Liu;Tal Galfsky;Tal Galfsky;Zheng Sun;Zheng Sun;Fengnian Xia

  • van der Waals Epitaxy of MoS2 Layers Using Graphene As Growth Templates

    Yumeng Shi;Wu Zhou;Wu Zhou;Ang-Yu Lu;Wenjing Fang

  • Wafer-Scale MoS2 Thin Layers Prepared by MoO3 Sulfurization

    Yu Chuan Lin;Wenjing Zhang;Jing Kai Huang;Jing Kai Huang;Keng Ku Liu

  • Role of the seeding promoter in MoS2 growth by chemical vapor deposition.

    Xi Ling;Yi-Hsien Lee;Yuxuan Lin;Wenjing Fang

  • Highly Efficient Electrocatalytic Hydrogen Production by MoSx Grown on Graphene‐Protected 3D Ni Foams

    Yung Huang Chang;Cheng Te Lin;Tzu Yin Chen;Chang Lung Hsu

  • Synthesis and transfer of single-layer transition metal disulfides on diverse surfaces.

    Yi Hsien Lee;Lili Yu;Han Wang;Wenjing Fang

  • Dielectric Screening of Excitons and Trions in Single-Layer MoS2

    Yuxuan Lin;Xi Ling;Lili Yu;Shengxi Huang

  • Graphene/MoS2 Hybrid Technology for Large-Scale Two-Dimensional Electronics

    Lili Yu;Yi Hsien Lee;Xi Ling;Elton J G Santos

  • Raman enhancement effect on two-dimensional layered materials: graphene, h-BN and MoS2

    Xi Ling;Wenjing Fang;Yi-Hsien Lee;Paulo T. Araujo

  • Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

    Wenjuan Zhu;Tony Low;Yi Hsien Lee;Han Wang

  • Valley-selective optical Stark effect in monolayer WS2

    Edbert J. Sie;James W. McIver;Yi-Hsien Lee;Liang Fu

  • Influence of La doping in multiferroic properties of BiFeO3 thin films

    Yi-Hsien Lee;Jenn-Ming Wu;Chih-Huang Lai

  • Large-Area Synthesis of High-Quality Uniform Few-Layer MoTe2

    Lin Zhou;Kai Xu;Ahmad Zubair;Albert D. Liao

  • Synthesis of Lateral Heterostructures of Semiconducting Atomic Layers

    Xin-Quan Zhang;Chin-Hao Lin;Yu-Wen Tseng;Kuan-Hua Huang

  • Trion-Induced Negative Photoconductivity in Monolayer MoS 2

    C. H. Lui;A. J. Frenzel;A. J. Frenzel;D. V. Pilon;Y.-H. Lee;Y.-H. Lee

  • Opening an Electrical Band Gap of Bilayer Graphene with Molecular Doping

    Wenjing Zhang;Cheng Te Lin;Keng Ku Liu;Teddy Tite

  • Nitrogen-Doped Graphene Sheets Grown by Chemical Vapor Deposition: Synthesis and Influence of Nitrogen Impurities on Carrier Transport

    Yu Fen Lu;Shun-Tsung Lo;Jheng Cyuan Lin;Wenjing Zhang

Frequent Co-Authors

Lain-Jong Li
Lain-Jong Li National University of Singapore
Shangjr Gwo
Shangjr Gwo National Tsing Hua University
Xi Ling
Xi Ling Boston University
Wenjing Zhang
Wenjing Zhang East China University of Science and Technology
Yumeng Shi
Yumeng Shi Shenzhen University
Cheng-Te Lin
Cheng-Te Lin Chinese Academy of Sciences
Madan Dubey
Madan Dubey United States Army Research Laboratory

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