World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
59
Citations
12173
World Ranking
7387
National Ranking
91

Shangjr Gwo publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Shangjr Gwo sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 324 publications — 65th percentile

65% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Shangjr Gwo D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Shangjr Gwo sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 59 D-Index — 44th percentile

44% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Research.com Recognitions

  • 2013 - Fellow of American Physical Society (APS) Citation For his important contributions in developing innovative approaches for growth and fundamental studies of semiconductor surfaces, interfaces, and nanostructures, for his experimental breakthroughs in developing plasmonic metamaterials and plasmonic nanolasers, and for his promotion of international collaborations in physics

Overview

Shangjr Gwo is affiliated with National Tsing Hua University in Taiwan. Their research primarily spans the fields of Materials Science and Engineering, with significant work in Biomedical Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry, Electrical and Electronic Engineering, and Atomic and Molecular Physics, and Optics.

The scientist's main topics of research include:

  • Plasmonic and Surface Plasmon Research
  • Gold and Silver Nanoparticles Synthesis and Applications
  • Metamaterials and Metasurfaces Applications
  • 2D Materials and Applications
  • GaN-based semiconductor devices and materials
  • Optical Coatings and Gratings
  • Quantum Dots Synthesis And Properties

Frequent co-authors with whom Shangjr Gwo has collaborated include:

  • Chang-Wei Cheng
  • Abhishek Dubey
  • Ragini Mishra
  • Ta-Jen Yen
  • Hyeyoung Ahn

Shangjr Gwo has published extensively in several scientific venues. The most common publication venues are:

  • Nano Letters
  • The Journal of Physical Chemistry C
  • Advanced Science
  • ACS Nano
  • ACS Applied Materials & Interfaces

Recent publications demonstrating the scope of Shangjr Gwo's work include:

  • "Aluminum Plasmonics Enriched Ultraviolet GaN Photodetector with Ultrahigh Responsivity, Detectivity, and Broad Bandwidth," 2020, Advanced Science
  • "Tunable plasmonic bound states in the continuum in the visible range," 2021, Physical Review B
  • "Epitaxial Aluminum Surface-Enhanced Raman Spectroscopy Substrates for Large-Scale 2D Material Characterization," 2020, ACS Nano
  • "Chiral Second-Harmonic Generation from Monolayer WS2/Aluminum Plasmonic Vortex Metalens," 2020, Nano Letters
  • "An Ultrasensitive Gateless Photodetector Based on the 2D Bilayer MoS2-1D Si Nanowire-0D Ag Nanoparticle Hybrid Structure," 2021, ACS Applied Materials & Interfaces

In recognition of their contributions, Shangjr Gwo was named a Fellow of the American Physical Society (APS) in 2013. The citation highlights their work on innovation in semiconductor surfaces, interfaces, nanostructures, plasmonic metamaterials, nanolasers, and promotion of international physics collaborations.

Best Publications

  • Plasmonic Nanolaser Using Epitaxially Grown Silver Film

    Yu Jung Lu;Jisun Kim;Hung Ying Chen;Chihhui Wu

  • Green, yellow, and orange defect emission from ZnO nanostructures : Influence of excitation wavelength

    A. B. Djurišić;Y. H. Leung;K. H. Tam;L. Ding

  • Large-Scale Hot Spot Engineering for Quantitative SERS at the Single-Molecule Scale

    Hung-Ying Chen;Meng-Hsien Lin;Chun-Yuan Wang;Yu-Ming Chang

  • InGaN/GaN nanorod array white light-emitting diode

    Hon-Way Lin;Yu-Jung Lu;Hung-Ying Chen;Hong-Mao Lee

  • All-color plasmonic nanolasers with ultralow thresholds: autotuning mechanism for single-mode lasing.

    Yu Jung Lu;Chun Yuan Wang;Jisun Kim;Hung Ying Chen

  • Facet-Dependent and Au Nanocrystal-Enhanced Electrical and Photocatalytic Properties of Au−Cu2O Core−Shell Heterostructures

    Chun Hong Kuo;Yu Chen Yang;Shangjr Gwo;Michael H. Huang

  • Tunable plasmonic response from alkanethiolate-stabilized gold nanoparticle superlattices: evidence of near-field coupling.

    Chi-Fan Chen;Shien-Der Tzeng;Hung-Ying Chen;Kuan-Jiuh Lin

  • Plasmon Hybridization in Individual Gold Nanocrystal Dimers: Direct Observation of Bright and Dark Modes

    Shu-Chun Yang;Hiromu Kobori;Chieh-Lun He;Meng-Hsien Lin

  • Nanomanipulation and controlled self-assembly of metal nanoparticles and nanocrystals for plasmonics

    Shangjr Gwo;Hung-Ying Chen;Meng-Hsien Lin;Liuyang Sun

  • Separation of valley excitons in a MoS 2 monolayer using a subwavelength asymmetric groove array

    Liuyang Sun;Chun-Yuan Wang;Chun-Yuan Wang;Alex Krasnok;Alex Krasnok;Junho Choi

  • Inorganic Gyroid with Exceptionally Low Refractive Index from Block Copolymer Templating

    Han-Yu Hsueh;Hung-Ying Chen;Ming-Shiuan She;Chun-Ku Chen

  • A Sub-ppm Acetone Gas Sensor for Diabetes Detection Using 10 nm Thick Ultrathin InN FETs

    Kun-Wei Kao;Ming-Che Hsu;Yuh-Hwa Chang;Shangjr Gwo

  • Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature

    S. Gwo;Chung-Lin Wu;C. H. Shen;W. H. Chang

  • Plasmonic Green Nanolaser Based on a Metal–Oxide–Semiconductor Structure

    Chen Ying Wu;Cheng Tai Kuo;Chun Yuan Wang;Chieh Lun He

  • The influence of shell thickness of Au@TiO2 core-shell nanoparticles on the plasmonic enhancement effect in dye-sensitized solar cells.

    Wei-Liang Liu;Fan-Cheng Lin;Yu-Chen Yang;Chen-Hsien Huang

  • Nanomachining of (110)-oriented silicon by scanning probe lithography and anisotropic wet etching

    F. S. S. Chien;F. S. S. Chien;C. L. Wu;Y. C. Chou;T. T. Chen

  • Titanium Nitride Epitaxial Films as a Plasmonic Material Platform: Alternative to Gold

    Wan-Ping Guo;Ragini Mishra;Chang-Wei Cheng;Bao-Hsien Wu

  • Charge trapping properties at silicon nitride/silicon oxide interface studied by variable-temperature electrostatic force microscopy

    S.-D. Tzeng;S. Gwo

  • Aluminum Plasmonics Enriched Ultraviolet GaN Photodetector with Ultrahigh Responsivity, Detectivity, and Broad Bandwidth

    Abhishek Dubey;Ragini Mishra;Yu-Hung Hsieh;Yu-Hung Hsieh;Chang-Wei Cheng

  • Metal phthalocyanine nanoribbons and nanowires

    W. Y. Tong;A. B. Djurisic;M. H. Xie;A. C. M. Ng

  • Structure and photoluminescence properties of epitaxially oriented GaN nanorods grown on Si(111) by plasma-assisted molecular-beam epitaxy

    Hung-Ying Chen;Hon-Way Lin;Chang-Hong Shen;Shangjr Gwo

  • Absence of Fermi-Level Pinning at Cleaved Nonpolar InN Surfaces

    Chung-Lin Wu;Hong Mao Lee;Cheng Tai Kuo;Chia Hao Chen

Frequent Co-Authors

Lih-Juann Chen
Lih-Juann Chen National Tsing Hua University
Aleksandra B. Djurišić
Aleksandra B. Djurišić University of Hong Kong
Yi-Hsien Lee
Yi-Hsien Lee National Tsing Hua University
Jin-Wei Shi
Jin-Wei Shi National Central University
Wen-Hao Chang
Wen-Hao Chang National Yang Ming Chiao Tung University
Wen-Feng Hsieh
Wen-Feng Hsieh National Yang Ming Chiao Tung University
William J. Schaff
William J. Schaff Cornell University
Ci-Ling Pan
Ci-Ling Pan National Tsing Hua University
Andrea Alù
Andrea Alù City University of New York
Chi-Kuang Sun
Chi-Kuang Sun National Taiwan University

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