World's Best Scientists 2026 revealed!
William J. Schaff

William J. Schaff

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
80
Citations
29840
World Ranking
516
National Ranking
239

William J. Schaff publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where William J. Schaff sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 532 publications — 87th percentile

87% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

William J. Schaff D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where William J. Schaff sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 80 D-Index — 93rd percentile

93% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

William J. Schaff is affiliated with Cornell University in the United States. Their research primarily spans the fields of Materials Science and Physics and Astronomy, with a focus on subdomains such as Condensed Matter Physics, Electronic, Optical and Magnetic Materials, and Materials Chemistry.

The scientist's work extensively covers topics related to GaN-based semiconductor devices and materials, Ga2O3 and related materials, and ZnO doping and properties. These areas form the basis of their published research contributions.

William J. Schaff has contributed to the following recent paper:

  • High performance and high yield sub-240 nm AlN:GaN short period superlattice LEDs grown by MBE on 6 in. sapphire substrates (2023, Applied Physics Letters)

Throughout their research career, they have frequently collaborated with several co-authors, including:

  • Jordan R. Nicholls
  • L. Anderson
  • William Lee
  • J. Ahn
  • Ashokraj Baskaran

Their work has appeared in the journal Applied Physics Letters, among other venues, marking this publication as a frequent outlet for the dissemination of their research findings.

Best Publications

  • Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

    O. Ambacher;J. Smart;J. R. Shealy;N. G. Weimann

  • Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

    O. Ambacher;B. Foutz;J. Smart;J. R. Shealy

  • Unusual properties of the fundamental band gap of InN

    J. Wu;W. Walukiewicz;K. M. Yu;J. W. Ager

  • Small band gap bowing in In1−xGaxN alloys

    J. Wu;W. Walukiewicz;K. M. Yu;J. W. Ager

  • Superior radiation resistance of In1-xGaxN alloys: Full-solar-spectrum photovoltaic material system

    J. Wu;W. Walukiewicz;K. M. Yu;W. Shan

  • Intrinsic electron accumulation at clean InN surfaces.

    I Mahboob;TD Veal;Christopher F McConville;H Lu

  • Effects of the narrow band gap on the properties of InN

    J. Wu;J. Wu;W. Walukiewicz;W. Shan;K. M. Yu

  • Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor

    M. Asif Khan;J. N. Kuznia;D. T. Olson;W. J. Schaff

  • Temperature dependence of the fundamental band gap of InN

    J. Wu;W. Walukiewicz;W. Shan;K. M. Yu

  • Undoped AlGaN/GaN HEMTs for microwave power amplification

    L.F. Eastman;V. Tilak;J. Smart;B.M. Green

  • Surface charge accumulation of InN films grown by molecular-beam epitaxy

    Hai Lu;William J. Schaff;Lester F. Eastman;C. E. Stutz

  • Fermi-level stabilization energy in group III nitrides

    S. X. Li;S. X. Li;K. M. Yu;J. Wu;R. E. Jones;R. E. Jones

  • Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C

    M. Asif Khan;Michael S. Shur;John N. Kuznia;Q. Chen

  • Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy

    Hai Lu;William J. Schaff;Jeonghyun Hwang;Hong Wu

  • pH response of GaN surfaces and its application for pH-sensitive field-effect transistors

    G. Steinhoff;M. Hermann;W. J. Schaff;L. F. Eastman

  • Effects of electron concentration on the optical absorption edge of InN

    J. Wu;W. Walukiewicz;S. X. Li;R. Armitage

  • Evidence for p-type doping of InN

    R. E. Jones;R. E. Jones;K. M. Yu;S. X. Li;S. X. Li;W. Walukiewicz

  • Improvement on epitaxial grown of InN by migration enhanced epitaxy

    Hai Lu;William J. Schaff;Jeonghyun Hwang;Hong Wu

  • Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers

    K. L. Kavanagh;M. A. Capano;L. W. Hobbs;J. C. Barbour

  • Origin of electron accumulation at wurtzite InN surfaces

    I Mahboob;TD Veal;Lfj Piper;Christopher F McConville

Frequent Co-Authors

Lester F. Eastman
Lester F. Eastman Cornell University
Joel W. Ager
Joel W. Ager Lawrence Berkeley National Laboratory
Kin Man Yu
Kin Man Yu City University of Hong Kong
Eugene E. Haller
Eugene E. Haller Lawrence Berkeley National Laboratory
Wladek Walukiewicz
Wladek Walukiewicz Lawrence Berkeley National Laboratory
Junqiao Wu
Junqiao Wu University of California, Berkeley
Oliver Ambacher
Oliver Ambacher University of Freiburg
Tim D. Veal
Tim D. Veal University of Liverpool
Christopher McConville
Christopher McConville Deakin University
Zuzanna Liliental-Weber
Zuzanna Liliental-Weber Lawrence Berkeley National Laboratory

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Related Online Degrees & Career Pathways

Pursuing a degree in Electronics and Electrical Engineering often leads students to explore flexible learning options that fit their schedules. Many working professionals benefit from accelerated online bachelor degree programs accredited, which allow faster completion without compromising quality.

For those interested in combining engineering expertise with educational skills, an instructional design masters online can open doors to specialized roles in training and development within technical fields.

Competency-based programs are gaining popularity for their focus on practical skills over traditional credit hours. These competency based programs are ideal for self-directed learners who want to demonstrate mastery in specific engineering competencies at their own pace.

Additionally, servicemembers and their families can find support through military spouse friendly online colleges, which offer flexibility and resources tailored to the unique challenges faced by military households pursuing further education in engineering and technology fields.

Best Scientists Citing William J. Schaff

Recently Published Articles