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William J. Schaff

William J. Schaff

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
80
Citations
29840
World Ranking
516
National Ranking
238

Overview

William J. Schaff is affiliated with Cornell University in the United States. Their research primarily spans the fields of Materials Science and Physics and Astronomy, with a focus on subdomains such as Condensed Matter Physics, Electronic, Optical and Magnetic Materials, and Materials Chemistry.

The scientist's work extensively covers topics related to GaN-based semiconductor devices and materials, Ga2O3 and related materials, and ZnO doping and properties. These areas form the basis of their published research contributions.

William J. Schaff has contributed to the following recent paper:

  • High performance and high yield sub-240 nm AlN:GaN short period superlattice LEDs grown by MBE on 6 in. sapphire substrates (2023, Applied Physics Letters)

Throughout their research career, they have frequently collaborated with several co-authors, including:

  • Jordan R. Nicholls
  • L. Anderson
  • William Lee
  • J. Ahn
  • Ashokraj Baskaran

Their work has appeared in the journal Applied Physics Letters, among other venues, marking this publication as a frequent outlet for the dissemination of their research findings.

Best Publications

  • Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

    O. Ambacher;J. Smart;J. R. Shealy;N. G. Weimann

  • Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

    O. Ambacher;B. Foutz;J. Smart;J. R. Shealy

  • Unusual properties of the fundamental band gap of InN

    J. Wu;W. Walukiewicz;K. M. Yu;J. W. Ager

  • Small band gap bowing in In1−xGaxN alloys

    J. Wu;W. Walukiewicz;K. M. Yu;J. W. Ager

  • Superior radiation resistance of In1-xGaxN alloys: Full-solar-spectrum photovoltaic material system

    J. Wu;W. Walukiewicz;K. M. Yu;W. Shan

  • Intrinsic electron accumulation at clean InN surfaces.

    I Mahboob;TD Veal;Christopher F McConville;H Lu

  • Effects of the narrow band gap on the properties of InN

    J. Wu;J. Wu;W. Walukiewicz;W. Shan;K. M. Yu

  • Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor

    M. Asif Khan;J. N. Kuznia;D. T. Olson;W. J. Schaff

  • Temperature dependence of the fundamental band gap of InN

    J. Wu;W. Walukiewicz;W. Shan;K. M. Yu

  • Undoped AlGaN/GaN HEMTs for microwave power amplification

    L.F. Eastman;V. Tilak;J. Smart;B.M. Green

  • Surface charge accumulation of InN films grown by molecular-beam epitaxy

    Hai Lu;William J. Schaff;Lester F. Eastman;C. E. Stutz

  • Fermi-level stabilization energy in group III nitrides

    S. X. Li;S. X. Li;K. M. Yu;J. Wu;R. E. Jones;R. E. Jones

  • Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C

    M. Asif Khan;Michael S. Shur;John N. Kuznia;Q. Chen

  • Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy

    Hai Lu;William J. Schaff;Jeonghyun Hwang;Hong Wu

  • pH response of GaN surfaces and its application for pH-sensitive field-effect transistors

    G. Steinhoff;M. Hermann;W. J. Schaff;L. F. Eastman

  • Effects of electron concentration on the optical absorption edge of InN

    J. Wu;W. Walukiewicz;S. X. Li;R. Armitage

  • Evidence for p-type doping of InN

    R. E. Jones;R. E. Jones;K. M. Yu;S. X. Li;S. X. Li;W. Walukiewicz

  • Improvement on epitaxial grown of InN by migration enhanced epitaxy

    Hai Lu;William J. Schaff;Jeonghyun Hwang;Hong Wu

  • Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers

    K. L. Kavanagh;M. A. Capano;L. W. Hobbs;J. C. Barbour

  • Origin of electron accumulation at wurtzite InN surfaces

    I Mahboob;TD Veal;Lfj Piper;Christopher F McConville

Frequent Co-Authors

Lester F. Eastman
Lester F. Eastman Cornell University
Joel W. Ager
Joel W. Ager Lawrence Berkeley National Laboratory
Eugene E. Haller
Eugene E. Haller Lawrence Berkeley National Laboratory
Kin Man Yu
Kin Man Yu City University of Hong Kong
Wladek Walukiewicz
Wladek Walukiewicz Lawrence Berkeley National Laboratory
Junqiao Wu
Junqiao Wu University of California, Berkeley
Oliver Ambacher
Oliver Ambacher University of Freiburg
Tim D. Veal
Tim D. Veal University of Liverpool
Zuzanna Liliental-Weber
Zuzanna Liliental-Weber Lawrence Berkeley National Laboratory
James R. Shealy
James R. Shealy Cornell University

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