What is he best known for?
The fields of study he is best known for:
- Electron
- Quantum mechanics
- Semiconductor
Optoelectronics, Condensed matter physics, Electron, Wide-bandgap semiconductor and Band gap are his primary areas of study.
The study incorporates disciplines such as Field-effect transistor, Molecular beam epitaxy and Microwave in addition to Optoelectronics.
His Condensed matter physics research incorporates themes from Surface states and Fermi level.
His Electron research incorporates elements of Spectral line and Hall effect.
William J. Schaff interconnects Epitaxy, Irradiation, Electrical resistivity and conductivity, Analytical chemistry and Sapphire in the investigation of issues within Wide-bandgap semiconductor.
His Band gap study incorporates themes from Effective mass, Wurtzite crystal structure and Photoluminescence.
His most cited work include:
- Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures (2141 citations)
- Unusual properties of the fundamental band gap of InN (1214 citations)
- Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures (1193 citations)
What are the main themes of his work throughout his whole career to date?
William J. Schaff focuses on Optoelectronics, Condensed matter physics, Molecular beam epitaxy, Electron and Doping.
His research integrates issues of Quantum well and Epitaxy in his study of Optoelectronics.
His Condensed matter physics research is multidisciplinary, incorporating elements of Hall effect and Semiconductor.
His research in Molecular beam epitaxy tackles topics such as Analytical chemistry which are related to areas like Absorption edge.
His study in Electron is interdisciplinary in nature, drawing from both Spectroscopy, Molecular physics and Atomic physics.
His Band gap research incorporates elements of Absorption, Wurtzite crystal structure and Photoluminescence.
He most often published in these fields:
- Optoelectronics (46.71%)
- Condensed matter physics (33.91%)
- Molecular beam epitaxy (24.91%)
What were the highlights of his more recent work (between 2006-2015)?
- Condensed matter physics (33.91%)
- Optoelectronics (46.71%)
- Molecular beam epitaxy (24.91%)
In recent papers he was focusing on the following fields of study:
His scientific interests lie mostly in Condensed matter physics, Optoelectronics, Molecular beam epitaxy, Doping and Analytical chemistry.
His biological study spans a wide range of topics, including Electron, Hall effect and Photoluminescence.
His study in Wide-bandgap semiconductor and Heterojunction falls within the category of Optoelectronics.
His studies examine the connections between Molecular beam epitaxy and genetics, as well as such issues in Indium nitride, with regards to Indium and Photoconductivity.
The various areas that William J. Schaff examines in his Doping study include Acceptor, Seebeck coefficient, Thin film, Impurity and Conductivity.
William J. Schaff has included themes like Characterization and Layer in his Analytical chemistry study.
Between 2006 and 2015, his most popular works were:
- Growth, fabrication, and characterization of InGaN solar cells (102 citations)
- Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces (88 citations)
- Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors (87 citations)
In his most recent research, the most cited papers focused on:
- Quantum mechanics
- Electron
- Semiconductor
His primary areas of study are Condensed matter physics, Optoelectronics, Electron, Semiconductor and Molecular beam epitaxy.
The concepts of his Condensed matter physics study are interwoven with issues in Seebeck coefficient, Hall effect and Photoluminescence.
Wide-bandgap semiconductor and Heterojunction are the subjects of his Optoelectronics studies.
His Electron research is multidisciplinary, relying on both Inverse photoemission spectroscopy, Electron mobility, High-electron-mobility transistor and Wurtzite crystal structure.
His studies in Semiconductor integrate themes in fields like Photodetector, Thermal conductivity, Irradiation and Quantum efficiency.
His Molecular beam epitaxy study integrates concerns from other disciplines, such as Solar cell, Surface states, Photoemission spectroscopy and Equivalent series resistance.
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