World's Best Scientists 2026 revealed!
Lester F. Eastman

Lester F. Eastman

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
80
Citations
30457
World Ranking
512
National Ranking
236

Materials Science

D-Index
81
Citations
30921
World Ranking
2540
National Ranking
731

Research.com Recognitions

  • 2001 - Fellow of American Physical Society (APS) Citation For pioneering contributions to the concepts of ballistic transport and piezoelectric doping in ultrasmall IIIV heterojunction transistors for applications in highspeed and microwave power devices and circuits and for leadership in transitioning electric

Overview

Lester F. Eastman was affiliated with Cornell University in the United States. Their documented research contributions include work in the field of primary care quality improvement.

Among their recent publications is the paper titled "Implementing quality improvement into practice: Exploring the work to develop and implement a QI project in primary care," published in 2024 in The Annals of Family Medicine.

Frequent co-authors who collaborated with Lester F. Eastman in their research include:

  • Eric M. Wiedenman
  • Claudia del C. Gutiérrez-Torres
  • Sanja Kostov
  • Roseanne O. Yeung

The primary documented publication venue was The Annals of Family Medicine, where Eastman published at least one paper.

Lester F. Eastman received recognition as a Fellow of the American Physical Society (APS) in 2001. The citation for the fellowship acknowledged pioneering contributions to ballistic transport and piezoelectric doping concepts in ultrasmall III-V heterojunction transistors for high-speed and microwave power devices and circuits, as well as leadership in transitioning electric technologies.

Best Publications

  • Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

    O. Ambacher;J. Smart;J. R. Shealy;N. G. Weimann

  • Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

    O. Ambacher;B. Foutz;J. Smart;J. R. Shealy

  • Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

    O Ambacher;J Majewski;C Miskys;A Link

  • The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs

    B.M. Green;K.K. Chu;E.M. Chumbes;J.A. Smart

  • Scattering of electrons at threading dislocations in GaN

    Nils G. Weimann;Lester F. Eastman;Dharanipal Doppalapudi;Hock M. Ng

  • Transient electron transport in wurtzite GaN, InN, and AlN

    Brian E. Foutz;Stephen K. O’Leary;Michael S. Shur;Lester F. Eastman

  • The role of dislocation scattering in n-type GaN films

    H. M. Ng;D. Doppalapudi;T. D. Moustakas;N. G. Weimann

  • Undoped AlGaN/GaN HEMTs for microwave power amplification

    L.F. Eastman;V. Tilak;J. Smart;B.M. Green

  • Electron transport in wurtzite indium nitride

    Stephen K. O’Leary;Brian E. Foutz;Michael S. Shur;Udayan V. Bhapkar

  • Surface charge accumulation of InN films grown by molecular-beam epitaxy

    Hai Lu;William J. Schaff;Lester F. Eastman;C. E. Stutz

  • Ballistic transport in semiconductor at low temperatures for low-power high-speed logic

    M.S. Shur;L.F. Eastman

  • Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy

    Hai Lu;William J. Schaff;Jeonghyun Hwang;Hong Wu

  • pH response of GaN surfaces and its application for pH-sensitive field-effect transistors

    G. Steinhoff;M. Hermann;W. J. Schaff;L. F. Eastman

  • Planar-doped barriers in GaAs by molecular beam epitaxy

    R.J. Malik;T.R. Aucoin;R.L. Ross;K. Board

  • The toughest transistor yet [GaN transistors]

    L.F. Eastman;U.K. Mishra

  • Complex free‐carrier profile synthesis by ’’atomic‐plane’’ doping of MBE GaAs

    C. E. C. Wood;G. Metze;J. Berry;L. F. Eastman

  • Slow transients observed in AlGaN/GaN HFETs: effects of SiN/sub x/ passivation and UV illumination

    G. Koley;V. Tilak;L.F. Eastman;M.G. Spencer

  • Improvement on epitaxial grown of InN by migration enhanced epitaxy

    Hai Lu;William J. Schaff;Jeonghyun Hwang;Hong Wu

  • Direct demonstration of a misfit strain‐generated electric field in a [111] growth axis zinc‐blende heterostructure

    E. A. Caridi;T. Y. Chang;K. W. Goossen;L. F. Eastman

  • Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation

    Hyungtak Kim;R.M. Thompson;V. Tilak;T.R. Prunty

Frequent Co-Authors

William J. Schaff
William J. Schaff Cornell University
James R. Shealy
James R. Shealy Cornell University
Michael G. Spencer
Michael G. Spencer Cornell University
Michael Shur
Michael Shur Rensselaer Polytechnic Institute
Oliver Ambacher
Oliver Ambacher University of Freiburg
Daniel Hofstetter
Daniel Hofstetter University of Neuchâtel
Luke F. Lester
Luke F. Lester Virginia Tech
Hideo Ohno
Hideo Ohno Tohoku University
Martin Stutzmann
Martin Stutzmann Technical University of Munich
Yu-Hwa Lo
Yu-Hwa Lo University of California, San Diego

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Best Scientists Citing Lester F. Eastman