2001 - Fellow of American Physical Society (APS) Citation For pioneering contributions to the concepts of ballistic transport and piezoelectric doping in ultrasmall IIIV heterojunction transistors for applications in highspeed and microwave power devices and circuits and for leadership in transitioning electric
As a part of the same scientific study, L.F. Eastman usually deals with the Chromatography, concentrating on Analytical Chemistry (journal) and frequently concerns with Organic chemistry. Many of his studies on Organic chemistry apply to Analytical Chemistry (journal) as well. His research on Quantum mechanics frequently links to adjacent areas such as Electric field. His Optoelectronics study frequently draws connections to adjacent fields such as Photoluminescence. His Photoluminescence study frequently draws parallels with other fields, such as Optoelectronics. In his works, he undertakes multidisciplinary study on Scattering and Electron. L.F. Eastman performs multidisciplinary study in Electron and Scattering in his work. His study brings together the fields of Passivation and Layer (electronics). Much of his study explores Passivation relationship to Layer (electronics).
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Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
O. Ambacher;J. Smart;J. R. Shealy;N. G. Weimann.
Journal of Applied Physics (1999)
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
O. Ambacher;B. Foutz;J. Smart;J. R. Shealy.
Journal of Applied Physics (2000)
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
O Ambacher;J Majewski;C Miskys;A Link.
Journal of Physics: Condensed Matter (2002)
The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
B.M. Green;K.K. Chu;E.M. Chumbes;J.A. Smart.
IEEE Electron Device Letters (2000)
Transient electron transport in wurtzite GaN, InN, and AlN
Brian E. Foutz;Stephen K. O’Leary;Michael S. Shur;Lester F. Eastman.
Journal of Applied Physics (1999)
The role of dislocation scattering in n-type GaN films
H. M. Ng;D. Doppalapudi;T. D. Moustakas;N. G. Weimann.
Applied Physics Letters (1998)
Undoped AlGaN/GaN HEMTs for microwave power amplification
L.F. Eastman;V. Tilak;J. Smart;B.M. Green.
IEEE Transactions on Electron Devices (2001)
Surface charge accumulation of InN films grown by molecular-beam epitaxy
Hai Lu;William J. Schaff;Lester F. Eastman;C. E. Stutz.
Applied Physics Letters (2003)
Electron transport in wurtzite indium nitride
Stephen K. O’Leary;Brian E. Foutz;Michael S. Shur;Udayan V. Bhapkar.
Journal of Applied Physics (1998)
Ballistic transport in semiconductor at low temperatures for low-power high-speed logic
M.S. Shur;L.F. Eastman.
IEEE Transactions on Electron Devices (1979)
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