World's Best Scientists 2026 revealed!
Lester F. Eastman

Lester F. Eastman

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
80
Citations
30457
World Ranking
512
National Ranking
237

Materials Science

D-Index
81
Citations
30921
World Ranking
2538
National Ranking
729

Lester F. Eastman publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Lester F. Eastman sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 620 publications — 91st percentile

91% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Lester F. Eastman D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Lester F. Eastman sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 80 D-Index — 93rd percentile

93% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2001 - Fellow of American Physical Society (APS) Citation For pioneering contributions to the concepts of ballistic transport and piezoelectric doping in ultrasmall IIIV heterojunction transistors for applications in highspeed and microwave power devices and circuits and for leadership in transitioning electric

Overview

Lester F. Eastman was affiliated with Cornell University in the United States. Their documented research contributions include work in the field of primary care quality improvement.

Among their recent publications is the paper titled "Implementing quality improvement into practice: Exploring the work to develop and implement a QI project in primary care," published in 2024 in The Annals of Family Medicine.

Frequent co-authors who collaborated with Lester F. Eastman in their research include:

  • Eric M. Wiedenman
  • Claudia del C. Gutiérrez-Torres
  • Sanja Kostov
  • Roseanne O. Yeung

The primary documented publication venue was The Annals of Family Medicine, where Eastman published at least one paper.

Lester F. Eastman received recognition as a Fellow of the American Physical Society (APS) in 2001. The citation for the fellowship acknowledged pioneering contributions to ballistic transport and piezoelectric doping concepts in ultrasmall III-V heterojunction transistors for high-speed and microwave power devices and circuits, as well as leadership in transitioning electric technologies.

Best Publications

  • Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

    O. Ambacher;J. Smart;J. R. Shealy;N. G. Weimann

  • Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

    O. Ambacher;B. Foutz;J. Smart;J. R. Shealy

  • Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

    O Ambacher;J Majewski;C Miskys;A Link

  • The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs

    B.M. Green;K.K. Chu;E.M. Chumbes;J.A. Smart

  • Scattering of electrons at threading dislocations in GaN

    Nils G. Weimann;Lester F. Eastman;Dharanipal Doppalapudi;Hock M. Ng

  • Transient electron transport in wurtzite GaN, InN, and AlN

    Brian E. Foutz;Stephen K. O’Leary;Michael S. Shur;Lester F. Eastman

  • The role of dislocation scattering in n-type GaN films

    H. M. Ng;D. Doppalapudi;T. D. Moustakas;N. G. Weimann

  • Undoped AlGaN/GaN HEMTs for microwave power amplification

    L.F. Eastman;V. Tilak;J. Smart;B.M. Green

  • Electron transport in wurtzite indium nitride

    Stephen K. O’Leary;Brian E. Foutz;Michael S. Shur;Udayan V. Bhapkar

  • Surface charge accumulation of InN films grown by molecular-beam epitaxy

    Hai Lu;William J. Schaff;Lester F. Eastman;C. E. Stutz

  • Ballistic transport in semiconductor at low temperatures for low-power high-speed logic

    M.S. Shur;L.F. Eastman

  • Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy

    Hai Lu;William J. Schaff;Jeonghyun Hwang;Hong Wu

  • pH response of GaN surfaces and its application for pH-sensitive field-effect transistors

    G. Steinhoff;M. Hermann;W. J. Schaff;L. F. Eastman

  • Planar-doped barriers in GaAs by molecular beam epitaxy

    R.J. Malik;T.R. Aucoin;R.L. Ross;K. Board

  • The toughest transistor yet [GaN transistors]

    L.F. Eastman;U.K. Mishra

  • Complex free‐carrier profile synthesis by ’’atomic‐plane’’ doping of MBE GaAs

    C. E. C. Wood;G. Metze;J. Berry;L. F. Eastman

  • Slow transients observed in AlGaN/GaN HFETs: effects of SiN/sub x/ passivation and UV illumination

    G. Koley;V. Tilak;L.F. Eastman;M.G. Spencer

  • Improvement on epitaxial grown of InN by migration enhanced epitaxy

    Hai Lu;William J. Schaff;Jeonghyun Hwang;Hong Wu

  • Direct demonstration of a misfit strain‐generated electric field in a [111] growth axis zinc‐blende heterostructure

    E. A. Caridi;T. Y. Chang;K. W. Goossen;L. F. Eastman

  • Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation

    Hyungtak Kim;R.M. Thompson;V. Tilak;T.R. Prunty

Frequent Co-Authors

William J. Schaff
William J. Schaff Cornell University
James R. Shealy
James R. Shealy Cornell University
Michael G. Spencer
Michael G. Spencer Cornell University
Michael Shur
Michael Shur Rensselaer Polytechnic Institute
Oliver Ambacher
Oliver Ambacher University of Freiburg
Daniel Hofstetter
Daniel Hofstetter University of Neuchâtel
Luke F. Lester
Luke F. Lester Virginia Tech
Hideo Ohno
Hideo Ohno Tohoku University
Martin Stutzmann
Martin Stutzmann Technical University of Munich
Yu-Hwa Lo
Yu-Hwa Lo University of California, San Diego

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