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Michael G. Spencer

Michael G. Spencer

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
41
Citations
14543
World Ranking
4191
National Ranking
1501

Materials Science

D-Index
48
Citations
18446
World Ranking
10693
National Ranking
2529

Overview

Michael G. Spencer is affiliated with Cornell University in the United States and conducts research primarily in the fields of Materials Science and Engineering. Their work spans several subfields, including Materials Chemistry, Molecular Biology, Biomedical Engineering, Atomic and Molecular Physics and Optics, and Mechanics of Materials.

The scientist's research focuses on several main topics as evidenced by their publications. These include Diamond and Carbon-based Materials Research, Boron and Carbon Nanomaterials Research, Photosynthetic Processes and Mechanisms, Metal and Thin Film Mechanics, Carbon Nanotubes in Composites, Spectroscopy and Quantum Chemical Studies, and Photoreceptor and Optogenetics research.

Recent significant publications illustrate the breadth of their expertise and areas of interest. Notable papers include:

  • Quantum Biology: An Update and Perspective, 2021, Quantum Reports
  • Mechanical characterization of boron carbide single crystals, 2021, Journal of the American Ceramic Society
  • Growth of high purity zone-refined Boron Carbide single crystals by Laser Diode Floating Zone method, 2020, Journal of Crystal Growth
  • Single neutron transfer on 23Ne and its relevance for the pathway of nucleosynthesis in astrophysical X-ray bursts, 2022, Physics Letters B
  • Electronic and optical characterization of bulk single crystals of cubic boron nitride (cBN), 2022, AIP Advances

Frequent co-authors collaborating with Michael G. Spencer include Peker Milas, Birol Ozturk, Michael A. Straker, Kevin J. Hemker, and Marco Sacchi. These collaborations suggest active partnerships in diverse research projects.

Publication venues where Spencer's work regularly appears highlight the scholar's engagement with both materials science and physics communities. These venues include the Journal of the American Ceramic Society, Quantum 2.0 Conference and Exhibition, Quantum Reports, Physics Letters B, and AIP Advances.

Best Publications

  • Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

    Sheneve Z. Butler;Shawna M. Hollen;Linyou Cao;Yi Cui;Yi Cui

  • Oriented 2D Covalent Organic Framework Thin Films on Single-Layer Graphene

    John W. Colson;Arthur R. Woll;Arnab Mukherjee;Mark P. Levendorf

  • Measurement of ultrafast carrier dynamics in epitaxial graphene

    Jahan M. Dawlaty;Shriram Shivaraman;Mvs Chandrashekhar;Farhan Rana

  • Ultrafast Optical-Pump Terahertz-Probe Spectroscopy of the Carrier Relaxation and Recombination Dynamics in Epitaxial Graphene

    Paul A. George;Jared Strait;Jahan Dawlaty;Shriram Shivaraman

  • Measurement of the optical absorption spectra of epitaxial graphene from terahertz to visible

    Jahan M. Dawlaty;Shriram Shivaraman;Jared Strait;Paul George

  • Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices

    R. D. Vispute;V. Talyansky;S. Choopun;R. P. Sharma

  • Amorphous and Crystalline Silicon Carbide III

    Gary L. Harris;Michael G. Spencer;Cary Y. W. Yang

  • Ultrafast relaxation dynamics of hot optical phonons in graphene

    Haining Wang;Jared H. Strait;Paul A. George;Shriram Shivaraman

  • Temperature Dependence of Wavelength Selectable Zero-Phonon Emission from Single Defects in Hexagonal Boron Nitride

    Nicholas R. Jungwirth;Brian Calderon;Yanxin Ji;Michael G. Spencer

  • Slow transients observed in AlGaN/GaN HFETs: effects of SiN/sub x/ passivation and UV illumination

    G. Koley;V. Tilak;L.F. Eastman;M.G. Spencer

  • Ultrafast Relaxation Dynamics of Hot Optical Phonons in Graphene

    Haining Wang;Jared H. Strait;Paul A. George;Shriram Shivaraman

  • Free-standing epitaxial graphene.

    Shriram Shivaraman;Robert A. Barton;Xun Yu;Jonathan Alden

  • Carrier recombination and generation rates for intravalley and intervalley phonon scattering in graphene

    Farhan Rana;Paul A. George;Jared H. Strait;Jahan Dawlaty

  • van der Waals epitaxial growth of graphene on sapphire by chemical vapor deposition without a metal catalyst.

    Jeonghyun Hwang;Moonkyung Kim;Dorr Campbell;Hussain A. Alsalman

  • Very Slow Cooling Dynamics of Photoexcited Carriers in Graphene Observed by Optical-Pump Terahertz-Probe Spectroscopy

    Jared H. Strait;Haining Wang;Shriram Shivaraman;Virgil B. Shields

  • Method, system, and apparatus for the growth of SiC and related or similar material, by chemical vapor deposition, using precursors in modified cold-wall reactor

    Yuri Makarov;Michael Spencer

  • Method for the growth of SiC, by chemical vapor deposition, using precursors in modified cold-wall reactor

    Yuri Makarov;Michael Spencer

  • Demonstration of a 4H SiC betavoltaic cell

    M. V. S. Chandrashekhar;Christopher I. Thomas;Hui Li;M. G. Spencer

  • Electrical characteristics of multilayer MoS2 FET's with MoS2/graphene heterojunction contacts.

    Joon Young Kwak;Jeonghyun Hwang;Brian Calderon;Hussain Alsalman

  • Surface potential measurements on GaN and AlGaN/GaN heterostructures by scanning Kelvin probe microscopy

    G. Koley;M. G. Spencer

Frequent Co-Authors

Lester F. Eastman
Lester F. Eastman Cornell University
Huaqiang Wu
Huaqiang Wu Tsinghua University
William J. Schaff
William J. Schaff Cornell University
Francis J. DiSalvo
Francis J. DiSalvo Cornell University
Michal Lipson
Michal Lipson Columbia University
Jiwoong Park
Jiwoong Park University of Chicago
Lourdes Salamanca-Riba
Lourdes Salamanca-Riba University of Maryland, College Park
Sandip Tiwari
Sandip Tiwari Cornell University
Carl-Mikael Zetterling
Carl-Mikael Zetterling Royal Institute of Technology
Mikael Östling
Mikael Östling Royal Institute of Technology

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