World's Best Scientists 2026 revealed!
Michael G. Spencer

Michael G. Spencer

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
41
Citations
14543
World Ranking
4191
National Ranking
1502

Materials Science

D-Index
48
Citations
18446
World Ranking
10691
National Ranking
2526

Michael G. Spencer publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Michael G. Spencer sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 260 publications — 47th percentile

47% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Michael G. Spencer D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Michael G. Spencer sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 41 D-Index — 39th percentile

39% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Michael G. Spencer is affiliated with Cornell University in the United States and conducts research primarily in the fields of Materials Science and Engineering. Their work spans several subfields, including Materials Chemistry, Molecular Biology, Biomedical Engineering, Atomic and Molecular Physics and Optics, and Mechanics of Materials.

The scientist's research focuses on several main topics as evidenced by their publications. These include Diamond and Carbon-based Materials Research, Boron and Carbon Nanomaterials Research, Photosynthetic Processes and Mechanisms, Metal and Thin Film Mechanics, Carbon Nanotubes in Composites, Spectroscopy and Quantum Chemical Studies, and Photoreceptor and Optogenetics research.

Recent significant publications illustrate the breadth of their expertise and areas of interest. Notable papers include:

  • Quantum Biology: An Update and Perspective, 2021, Quantum Reports
  • Mechanical characterization of boron carbide single crystals, 2021, Journal of the American Ceramic Society
  • Growth of high purity zone-refined Boron Carbide single crystals by Laser Diode Floating Zone method, 2020, Journal of Crystal Growth
  • Single neutron transfer on 23Ne and its relevance for the pathway of nucleosynthesis in astrophysical X-ray bursts, 2022, Physics Letters B
  • Electronic and optical characterization of bulk single crystals of cubic boron nitride (cBN), 2022, AIP Advances

Frequent co-authors collaborating with Michael G. Spencer include Peker Milas, Birol Ozturk, Michael A. Straker, Kevin J. Hemker, and Marco Sacchi. These collaborations suggest active partnerships in diverse research projects.

Publication venues where Spencer's work regularly appears highlight the scholar's engagement with both materials science and physics communities. These venues include the Journal of the American Ceramic Society, Quantum 2.0 Conference and Exhibition, Quantum Reports, Physics Letters B, and AIP Advances.

Best Publications

  • Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

    Sheneve Z. Butler;Shawna M. Hollen;Linyou Cao;Yi Cui;Yi Cui

  • Oriented 2D Covalent Organic Framework Thin Films on Single-Layer Graphene

    John W. Colson;Arthur R. Woll;Arnab Mukherjee;Mark P. Levendorf

  • Measurement of ultrafast carrier dynamics in epitaxial graphene

    Jahan M. Dawlaty;Shriram Shivaraman;Mvs Chandrashekhar;Farhan Rana

  • Ultrafast Optical-Pump Terahertz-Probe Spectroscopy of the Carrier Relaxation and Recombination Dynamics in Epitaxial Graphene

    Paul A. George;Jared Strait;Jahan Dawlaty;Shriram Shivaraman

  • Measurement of the optical absorption spectra of epitaxial graphene from terahertz to visible

    Jahan M. Dawlaty;Shriram Shivaraman;Jared Strait;Paul George

  • Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices

    R. D. Vispute;V. Talyansky;S. Choopun;R. P. Sharma

  • Amorphous and Crystalline Silicon Carbide III

    Gary L. Harris;Michael G. Spencer;Cary Y. W. Yang

  • Ultrafast relaxation dynamics of hot optical phonons in graphene

    Haining Wang;Jared H. Strait;Paul A. George;Shriram Shivaraman

  • Temperature Dependence of Wavelength Selectable Zero-Phonon Emission from Single Defects in Hexagonal Boron Nitride

    Nicholas R. Jungwirth;Brian Calderon;Yanxin Ji;Michael G. Spencer

  • Slow transients observed in AlGaN/GaN HFETs: effects of SiN/sub x/ passivation and UV illumination

    G. Koley;V. Tilak;L.F. Eastman;M.G. Spencer

  • Ultrafast Relaxation Dynamics of Hot Optical Phonons in Graphene

    Haining Wang;Jared H. Strait;Paul A. George;Shriram Shivaraman

  • Free-standing epitaxial graphene.

    Shriram Shivaraman;Robert A. Barton;Xun Yu;Jonathan Alden

  • Carrier recombination and generation rates for intravalley and intervalley phonon scattering in graphene

    Farhan Rana;Paul A. George;Jared H. Strait;Jahan Dawlaty

  • van der Waals epitaxial growth of graphene on sapphire by chemical vapor deposition without a metal catalyst.

    Jeonghyun Hwang;Moonkyung Kim;Dorr Campbell;Hussain A. Alsalman

  • Very Slow Cooling Dynamics of Photoexcited Carriers in Graphene Observed by Optical-Pump Terahertz-Probe Spectroscopy

    Jared H. Strait;Haining Wang;Shriram Shivaraman;Virgil B. Shields

  • Method, system, and apparatus for the growth of SiC and related or similar material, by chemical vapor deposition, using precursors in modified cold-wall reactor

    Yuri Makarov;Michael Spencer

  • Method for the growth of SiC, by chemical vapor deposition, using precursors in modified cold-wall reactor

    Yuri Makarov;Michael Spencer

  • Demonstration of a 4H SiC betavoltaic cell

    M. V. S. Chandrashekhar;Christopher I. Thomas;Hui Li;M. G. Spencer

  • Electrical characteristics of multilayer MoS2 FET's with MoS2/graphene heterojunction contacts.

    Joon Young Kwak;Jeonghyun Hwang;Brian Calderon;Hussain Alsalman

  • Surface potential measurements on GaN and AlGaN/GaN heterostructures by scanning Kelvin probe microscopy

    G. Koley;M. G. Spencer

Frequent Co-Authors

Lester F. Eastman
Lester F. Eastman Cornell University
Huaqiang Wu
Huaqiang Wu Tsinghua University
William J. Schaff
William J. Schaff Cornell University
Francis J. DiSalvo
Francis J. DiSalvo Cornell University
Michal Lipson
Michal Lipson Columbia University
Jiwoong Park
Jiwoong Park University of Chicago
Lourdes Salamanca-Riba
Lourdes Salamanca-Riba University of Maryland, College Park
Sandip Tiwari
Sandip Tiwari Cornell University
Carl-Mikael Zetterling
Carl-Mikael Zetterling Royal Institute of Technology
Mikael Östling
Mikael Östling Royal Institute of Technology

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