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Carl-Mikael Zetterling

Carl-Mikael Zetterling

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
34
Citations
4715
World Ranking
5821
National Ranking
94

Overview

Carl-Mikael Zetterling is affiliated with the Royal Institute of Technology in Sweden. Their research focuses primarily on engineering, with a strong emphasis on electrical and electronic engineering.

Their work spans several subfields including:

  • Electrical and Electronic Engineering
  • Biomedical Engineering
  • Mechanics of Materials
  • Civil and Structural Engineering
  • Atomic and Molecular Physics, and Optics

The main topics of research covered by Zetterling include:

  • Silicon Carbide Semiconductor Technologies
  • Semiconductor materials and devices
  • Radiation Effects in Electronics
  • Nanowire Synthesis and Applications
  • Integrated Circuits and Semiconductor Failure Analysis
  • Thin-Film Transistor Technologies
  • Ultrasonics and Acoustic Wave Propagation

Zetterling has contributed to various publication venues, including:

  • IEEE Journal of the Electron Devices Society
  • Sensors
  • IEEE Spectrum
  • IEEE Transactions on Nuclear Science
  • Materials Science in Semiconductor Processing

Among recent papers associated with Zetterling's research area are:

  • "A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 °C", 2020, IEEE Journal of the Electron Devices Society
  • "Venus Calling Silicon Carbide Radio Circuits Can Take The Heat Needed To Phone Home From Our Hellish Sister Planet", 2021, IEEE Spectrum
  • "In Situ Gamma Irradiation Effects on 4H-SiC Bipolar Junction Transistors", 2023, IEEE Transactions on Nuclear Science
  • "SHM System for Composite Material Based on Lamb Waves and Using Machine Learning on Hardware", 2024, Sensors
  • "Self-aligned contacts to ion implanted S/D regions in 4H-SiC", 2023, Materials Science in Semiconductor Processing

Frequent co-authors include:

  • Alex Metreveli
  • Mattias Ekström
  • B. Gunnar Malm
  • Anders Hallén
  • Ilaria Di Sarcina

Best Publications

  • Process technology for silicon carbide devices

    Carl-Mikael Zetterling

  • SiC power devices — Present status, applications and future perspective

    Mikael Ostling;Reza Ghandi;Carl-Mikael Zetterling

  • Inductively coupled plasma etching of bulk 6H-SiC and thin-film SiCN in NF3 chemistries

    J. J. Wang;E. S. Lambers;S. J. Pearton;Mikael Östling

  • 500 $^{\circ}{ m C}$ Bipolar Integrated OR/NOR Gate in 4H-SiC

    Luigia Lanni;Bengt Gunnar Malm;Mikael Ostling;Carl-Mikael Zetterling

  • A Monolithic, 500 degrees C Operational Amplifier in 4H-SiC Bipolar Technology

    Raheleh Hedayati;Luigia Lanni;Saul Rodriguez;Bengt Gunnar Malm

  • Investigation of aluminum nitride grown by metal–organic chemical-vapor deposition on silicon carbide

    Carl-Mikael Zetterling;Mikael Östling;K. Wongchotigul;M. G. Spencer

  • Ohmic contact properties of magnetron sputtered Ti3SiC2 on n- and p-type 4H-silicon carbide

    K. Buchholt;R. Ghandi;M. Domeij;C.-M. Zetterling

  • A 2.8kV, Forward Drop JBS Diode with Low Leakage

    Fanny Dahlquist;J. O Svedberg;Carl-Mikael Zetterling;Mikael Östling

  • High-Voltage 4H-SiC PiN Diodes With Etched Junction Termination Extension

    R. Ghandi;B. Buono;M. Domeij;G. Malm

  • Low resistivity ohmic titanium carbide contacts to n- and p-type 4H-silicon carbide

    S. K. Lee;Carl-Mikael Zetterling;Mikael Östling;J. P. Palmquist

  • Reduction of the Schottky barrier height on silicon carbide using Au nano-particles

    SK Lee;CM Zetterling;M Ostling;I Åberg

  • Ultradeep, low-damage dry etching of SiC

    H. Cho;P. Leerungnawarat;D. C. Hays;S. J. Pearton

  • Surface-Passivation Effects on the Performance of 4H-SiC BJTs

    R Ghandi;B Buono;M Domeij;R Esteve

  • Geometrical effects in high current gain 1100-V 4H-SiC BJTs

    M. Domeij;H.-S. Lee;E. Danielsson;C.-M. Zetterling

  • 1200-V 5.2- $\hbox{m}\Omega\cdot\hbox{cm}^{2}$ 4H-SiC BJTs With a High Common-Emitter Current Gain

    Hyung-Seok Lee;M. Domeij;C.-M. Zetterling;M. Ostling

  • Modeling and Characterization of Current Gain Versus Temperature in 4H-SiC Power BJTs

    B. Buono;R. Ghandi;M. Domeij;B.G. Malm

  • ICP etching of SiC

    J. J. Wang;E. S. Lambers;S. J. Pearton;Mikael Östling

  • High density plasma via hole etching in SiC

    H. Cho;K. P. Lee;P. Leerungnawarat;S. N. G. Chu

  • Junction Barrier Schottky Diodes in 4H-SiC and 6H-SiC

    Fanny Dahlquist;Carl Mikael Zetterling;Mikael Östling;K. Rottner

  • Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC

    Luigia Lanni;R. Ghandi;B. G. Malm;C. Zetterling

  • Schottky barrier height dependence on the metal work function for p-type 4H-silicon carbide

    S.-K. Lee;C.-M. Zetterling;M. Östling

Frequent Co-Authors

Mikael Östling
Mikael Östling Royal Institute of Technology
Takeshi Ohshima
Takeshi Ohshima Japan Atomic Energy Agency
Fan Ren
Fan Ren University of Florida
Stephen J. Pearton
Stephen J. Pearton University of Florida
Ulf Jansson
Ulf Jansson Uppsala University
Erik Janzén
Erik Janzén Linköping University
Jun Lu
Jun Lu Zhejiang University
Robert F. Davis
Robert F. Davis Carnegie Mellon University
Kevin J. Linthicum
Kevin J. Linthicum MACOM (United States)
Per Eklund
Per Eklund Uppsala University

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