Carl-Mikael Zetterling

Carl-Mikael Zetterling publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Carl-Mikael Zetterling sits on this spectrum.

Carl-Mikael Zetterling D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Carl-Mikael Zetterling sits on this spectrum.

Overview

Best Publications

• Process technology for silicon carbide devices

  Carl-Mikael Zetterling

  272
  Citations

• SiC power devices — Present status, applications and future perspective

  Mikael Ostling;Reza Ghandi;Carl-Mikael Zetterling

  257
  Citations

• Inductively coupled plasma etching of bulk 6H-SiC and thin-film SiCN in NF3 chemistries

  J. J. Wang;E. S. Lambers;S. J. Pearton;Mikael Östling

  203
  Citations

• 500 $^{\circ}{ m C}$ Bipolar Integrated OR/NOR Gate in 4H-SiC

  Luigia Lanni;Bengt Gunnar Malm;Mikael Ostling;Carl-Mikael Zetterling

  120
  Citations

• A Monolithic, 500 degrees C Operational Amplifier in 4H-SiC Bipolar Technology

  Raheleh Hedayati;Luigia Lanni;Saul Rodriguez;Bengt Gunnar Malm

  101
  Citations

• Investigation of aluminum nitride grown by metal–organic chemical-vapor deposition on silicon carbide

  Carl-Mikael Zetterling;Mikael Östling;K. Wongchotigul;M. G. Spencer

  101
  Citations

• Ohmic contact properties of magnetron sputtered Ti3SiC2 on n- and p-type 4H-silicon carbide

  K. Buchholt;R. Ghandi;M. Domeij;C.-M. Zetterling

  92
  Citations

• A 2.8kV, Forward Drop JBS Diode with Low Leakage

  Fanny Dahlquist;J. O Svedberg;Carl-Mikael Zetterling;Mikael Östling

  86
  Citations

• High-Voltage 4H-SiC PiN Diodes With Etched Junction Termination Extension

  R. Ghandi;B. Buono;M. Domeij;G. Malm

  84
  Citations

• Low resistivity ohmic titanium carbide contacts to n- and p-type 4H-silicon carbide

  S. K. Lee;Carl-Mikael Zetterling;Mikael Östling;J. P. Palmquist

  84
  Citations

• Reduction of the Schottky barrier height on silicon carbide using Au nano-particles

  SK Lee;CM Zetterling;M Ostling;I Åberg

  83
  Citations

• Ultradeep, low-damage dry etching of SiC

  H. Cho;P. Leerungnawarat;D. C. Hays;S. J. Pearton

  82
  Citations

• Surface-Passivation Effects on the Performance of 4H-SiC BJTs

  R Ghandi;B Buono;M Domeij;R Esteve

  82
  Citations

• Geometrical effects in high current gain 1100-V 4H-SiC BJTs

  M. Domeij;H.-S. Lee;E. Danielsson;C.-M. Zetterling

  76
  Citations

• 1200-V 5.2- $\hbox{m}\Omega\cdot\hbox{cm}^{2}$ 4H-SiC BJTs With a High Common-Emitter Current Gain

  Hyung-Seok Lee;M. Domeij;C.-M. Zetterling;M. Ostling

  74
  Citations

• Modeling and Characterization of Current Gain Versus Temperature in 4H-SiC Power BJTs

  B. Buono;R. Ghandi;M. Domeij;B.G. Malm

  74
  Citations

• ICP etching of SiC

  J. J. Wang;E. S. Lambers;S. J. Pearton;Mikael Östling

  73
  Citations

• High density plasma via hole etching in SiC

  H. Cho;K. P. Lee;P. Leerungnawarat;S. N. G. Chu

  70
  Citations

• Junction Barrier Schottky Diodes in 4H-SiC and 6H-SiC

  Fanny Dahlquist;Carl Mikael Zetterling;Mikael Östling;K. Rottner

  69
  Citations

• Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC

  Luigia Lanni;R. Ghandi;B. G. Malm;C. Zetterling

  69
  Citations

• Schottky barrier height dependence on the metal work function for p-type 4H-silicon carbide

  S.-K. Lee;C.-M. Zetterling;M. Östling

  68
  Citations