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Sei-Hyung Ryu

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 49 2985 2863 1118 1043 239 7882

Sei-Hyung Ryu publications per year

The chart shows the history of publications by Sei-Hyung Ryu between 1998 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Sei-Hyung Ryu published across 28 years, from 1998 to 2025, averaging 9.3 papers a year. Output peaked at 28 publications in 2006. 17 of the 260 publications appeared in the last two years.

No. of publications
5 10 15 20 25
Bar chart. Horizontal axis: year, 1998 to 2025. Vertical axis: number of publications, 0 to 28. Peak 28 publications in 2006. 1998: 2 publications 1999: 2 publications 2000: 8 publications 2001: 9 publications 2002: 12 publications 2003: 5 publications 2004: 13 publications 2005: 17 publications 2006: 28 publications 2007: 9 publications 2008: 6 publications 2009: 16 publications 2010: 13 publications 2011: 10 publications 2012: 21 publications 2013: 10 publications 2014: 15 publications 2015: 13 publications 2016: 13 publications 2017: 3 publications 2018: 1 publication 2019: 4 publications 2020: 2 publications 2021: 2 publications 2022: 3 publications 2023: 6 publications 2024: 10 publications 2025: 7 publications
1998 2025

260 publications in total across all disciplines

View publications per year as a table
Sei-Hyung Ryu: publications per year, 1998 to 2025
Year Publications
1998 2
1999 2
2000 8
2001 9
2002 12
2003 5
2004 13
2005 17
2006 28
2007 9
2008 6
2009 16
2010 13
2011 10
2012 21
2013 10
2014 15
2015 13
2016 13
2017 3
2018 1
2019 4
2020 2
2021 2
2022 3
2023 6
2024 10
2025 7
Total 260
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Sei-Hyung Ryu publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Sei-Hyung Ryu sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 234–253 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 239 publications — 41st percentile

41% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399 239
254–273 366
274–293 335
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Sei-Hyung Ryu D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Sei-Hyung Ryu sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 49 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 49 D-Index — 58th percentile

58% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130 49
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

Sei-Hyung Ryu is affiliated with Wolfspeed, Inc. in the United States and has focused research efforts primarily in engineering, with a specialization in electrical and electronic engineering. Their work spans several subfields including electronic, optical and magnetic materials, materials chemistry, atomic and molecular physics, and computational mechanics.

The scientist's research contributions have been published extensively in areas related to semiconductor technologies and device engineering. Main topics of their work include silicon carbide semiconductor technologies, semiconductor materials and devices, electromagnetic compatibility and noise suppression, advancements in semiconductor devices and circuit design, electrostatic discharge in electronics, copper interconnects and reliability, and radiation effects in electronics.

Sei-Hyung Ryu has authored multiple papers, some of which include:

  • Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs, 2022, 2022 IEEE International Reliability Physics Symposium (IRPS)
  • Improvements to the Analytical Model to Describe UIS Events, 2022, IEEE Transactions on Electron Devices
  • Outlook for Dielectric/SiC Interfaces for Future Generation MOSFETs, 2023, Materials science forum
  • Study of Dopant Activation and Ionization for Phosphorus in 4H-SiC, 2024, Journal of Electronic Materials
  • Modeling methodology for thermo-structural analysis of V-NAND flash memory structure, 2025, Scientific Reports

Frequent coauthors in their research include Daniel J. Lichtenwalner, Brett Hull, Hemant Dixit, Jae Hyung Park, and Suman Das.

Sei-Hyung Ryu's work has appeared repeatedly in several publication venues such as Materials science forum, Diffusion and defect data along with solid state phenomena, Key engineering materials, Journal of Electronic Materials, and IEEE Transactions on Electron Devices.

Best Publications

  • Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV

    J. W. Palmour;L. Cheng;V. Pala;E. V. Brunt

  • Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence

    T.R. McNutt;A.R. Hefner;H.A. Mantooth;D. Berning

  • A New Degradation Mechanism in High-Voltage SiC Power MOSFETs

    A. Agarwal;H. Fatima;S. Haney;Sei-Hyung Ryu

  • 1800 V NPN bipolar junction transistors in 4H-SiC

    Sei-Hyung Ryu;A.K. Agarwal;R. Singh;J.W. Palmour

  • SiC Power Devices for Microgrids

    Qingchun Zhang;R Callanan;M K Das;Sei-Hyung Ryu

  • 10-kV, 123-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC power DMOSFETs

    Sei-Hyung Ryu;S. Krishnaswami;M. O'Loughlin;J. Richmond

  • Comparative Evaluation of 15-kV SiC MOSFET and 15-kV SiC IGBT for Medium-Voltage Converter Under the Same dv/dt Conditions

    Kasunaidu Vechalapu;Subhashish Bhattacharya;Edward Van Brunt;Sei-Hyung Ryu

  • Silicon carbide power devices with self-aligned source and well regions

    Sei-Hyung Ryu

  • High-resolution alpha-particle spectrometry using 4H silicon carbide semiconductor detectors

    F.H. Ruddy;J.G. Seidel;Haoqian Chen;A.R. Dulloo

  • Recent progress in SiC DMOSFETs and JBS diodes at Cree

    R.J. Callanan;A. Agarwal;A. Burk;M. Das

  • The fast neutron response of 4H silicon carbide semiconductor radiation detectors

    F.H. Ruddy;A.R. Dulloo;J.G. Seidel;M.K. Das

  • Characterization of 15 kV SiC n-IGBT and its application considerations for high power converters

    Arun Kadavelugu;Subhashish Bhattacharya;Sei-Hyung Ryu;Edward Van Brunt

  • 1000-V, 30-A 4H-SiC BJTs with high current gain

    S. Krishnaswami;A. Agarwal;Sei-Hyung Ryu;C. Capell

  • Relationship between 4H-SiC∕SiO2 transition layer thickness and mobility

    T. L. Biggerstaff;C. L. Reynolds;T. Zheleva;A. Lelis

  • METHOD OF PROCESSING SEMICONDUCTOR WAFER HAVING SILICON CARBIDE POWER DEVICE

    Agarwal Anant;Ryu Si Hoon;Matt Donofrio

  • Digital CMOS IC's in 6H-SiC operating on a 5-V power supply

    Sei-Hyung Ryu;K.T. Kornegay;J.A. Cooper;M.R. Melloch

  • 10 kV, 5A 4H-SiC Power DMOSFET

    Sei-Hyung Ryu;S. Krishnaswami;B. Hull;J. Richmond

  • Reliability and stability of SiC power mosfets and next-generation SiC MOSFETs

    B. Hull;S. Allen;Q. Zhang;D. Gajewski

  • 22 kV, 1 cm 2 , 4H-SiC n-IGBTs with improved conductivity modulation

    E. V. Brunt;L. Cheng;M. O'Loughlin;C. Capell

  • High Temperature, High Current, 4H-SiC Accu-DMOSFET

    Ranbir Singh;Sei Hyung Ryu;John W. Palmour

  • Comparative evaluation of 15 kV SiC MOSFET and 15 kV SiC IGBT for medium voltage converter under same dv/dt conditions

    Kasunaidu Vechalapu;Subhashish Bhattacharya;Edward Van Brunt;Sei-Hyung Ryu

Frequent Co-Authors

Anant K. Agarwal
Anant K. Agarwal The Ohio State University
Subhashish Bhattacharya
Subhashish Bhattacharya North Carolina State University
Sokrates T. Pantelides
Sokrates T. Pantelides Vanderbilt University
Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University
Ranbir Singh
Ranbir Singh Indian Institute of Technology Mandi
Daniel M. Fleetwood
Daniel M. Fleetwood Vanderbilt University
John R. Williams
John R. Williams Auburn University
T.P. Chow
T.P. Chow Rensselaer Polytechnic Institute
Alex Q. Huang
Alex Q. Huang The University of Texas at Austin
Leonard C. Feldman
Leonard C. Feldman Rutgers, The State University of New Jersey

External Links

Personal website of Sei-Hyung Ryu Google Scholar page

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Related Online Degrees & Career Pathways

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In addition, students who identify as introverts may find fulfilling opportunities by considering good paying jobs for introverts that align well with engineering roles, such as design, analysis, or quality assurance. These roles often emphasize focused, independent work—ideal for introverted personalities.

To supplement technical expertise, pursuing an online accelerated project management degree programs can be advantageous. These programs provide essential skills for managing engineering projects within tight deadlines and budgets, helping graduates become well-rounded professionals.

Finally, a bachelor's in project management offers a comprehensive foundation for those aiming to lead teams and oversee large-scale engineering projects. Combining this degree with an electronics or electrical engineering background can significantly boost career prospects and leadership potential in various industries.

Best Scientists Citing Sei-Hyung Ryu

Anant K. Agarwal

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Publications: 104

Subhashish Bhattacharya

Subhashish Bhattacharya

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Publications: 73

Alex Q. Huang

Alex Q. Huang

The University of Texas at Austin

Publications: 73

Tsunenobu Kimoto

Tsunenobu Kimoto

Kyoto University

Publications: 62

Mikael Östling

Mikael Östling

Royal Institute of Technology

Publications: 39

Jun Suda

Jun Suda

Nagoya University

Publications: 39

Carl-Mikael Zetterling

Carl-Mikael Zetterling

Royal Institute of Technology

Publications: 34

Homer Alan Mantooth

Homer Alan Mantooth

University of Arkansas at Fayetteville

Publications: 25

Leon M. Tolbert

Leon M. Tolbert

University of Tennessee at Knoxville

Publications: 25

T.P. Chow

T.P. Chow

Rensselaer Polytechnic Institute

Publications: 23

Rolando Burgos

Rolando Burgos

Virginia Tech

Publications: 20

Francesco Iannuzzo

Francesco Iannuzzo

Aalborg University

Publications: 20

Fabrizio Roccaforte

Fabrizio Roccaforte

National Research Council (CNR)

Publications: 20

John R. Williams

John R. Williams

Auburn University

Publications: 19

Dushan Boroyevich

Dushan Boroyevich

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Publications: 18

Hajime Okumura

Hajime Okumura

National Institute of Advanced Industrial Science and Technology

Publications: 17

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