His work in Electrical engineering is not limited to one particular discipline; it also encompasses Logic gate. Sei-Hyung Ryu merges many fields, such as Logic gate and Transistor, in his writings. In his research, Sei-Hyung Ryu performs multidisciplinary study on Transistor and Thyristor. His multidisciplinary approach integrates Thyristor and Gate turn-off thyristor in his work. His studies link Switching time with Optoelectronics. Many of his studies involve connections with topics such as Transconductance and Voltage. As part of his studies on Silicon carbide, he often connects relevant subjects like Metallurgy. Many of his studies involve connections with topics such as Silicon and Metallurgy. He integrates Silicon with Silicon carbide in his study.
His work investigates the relationship between Metallurgy and topics such as Silicon carbide that intersect with problems in Composite material. In his works, Sei-Hyung Ryu performs multidisciplinary study on Composite material and Silicon carbide. His study on Optoelectronics is interrelated to topics such as Common emitter and Doping. Doping is frequently linked to Optoelectronics in his study. His Voltage research encompasses a variety of disciplines, including Gate oxide, Field-effect transistor and High voltage. In his papers, Sei-Hyung Ryu integrates diverse fields, such as Field-effect transistor and Transistor. Sei-Hyung Ryu integrates many fields in his works, including Transistor and Threshold voltage. While working on this project, he studies both Threshold voltage and MOSFET. Sei-Hyung Ryu combines MOSFET and Power MOSFET in his research.
His work in Injector covers topics such as Mechanical engineering which are related to areas like Drop (telecommunication). His Drop (telecommunication) study often links to related topics such as Mechanical engineering. His Composite material study frequently involves adjacent topics like Layer (electronics) and Temperature coefficient. His Composite material research extends to the thematically linked field of Layer (electronics). In his work, he performs multidisciplinary research in Temperature coefficient and Voltage. His Converters research extends to the thematically linked field of Voltage. He's looking at Power (physics) as part of his Reliability (semiconductor), Power semiconductor device, Rectification and Gate driver and Power (physics) study. His work in Reliability (semiconductor) is not limited to one particular discipline; it also encompasses Power (physics). Power semiconductor device is closely attributed to Quantum mechanics in his research.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence
T.R. McNutt;A.R. Hefner;H.A. Mantooth;D. Berning.
IEEE Transactions on Power Electronics (2007)
Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV
J. W. Palmour;L. Cheng;V. Pala;E. V. Brunt.
international symposium on power semiconductor devices and ic's (2014)
A New Degradation Mechanism in High-Voltage SiC Power MOSFETs
A. Agarwal;H. Fatima;S. Haney;Sei-Hyung Ryu.
IEEE Electron Device Letters (2007)
1800 V NPN bipolar junction transistors in 4H-SiC
Sei-Hyung Ryu;A.K. Agarwal;R. Singh;J.W. Palmour.
IEEE Electron Device Letters (2001)
SiC Power Devices for Microgrids
Qingchun Zhang;R Callanan;M K Das;Sei-Hyung Ryu.
IEEE Transactions on Power Electronics (2010)
10-kV, 123-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC power DMOSFETs
Sei-Hyung Ryu;S. Krishnaswami;M. O'Loughlin;J. Richmond.
IEEE Electron Device Letters (2004)
Silicon carbide power devices with self-aligned source and well regions
Comparative Evaluation of 15-kV SiC MOSFET and 15-kV SiC IGBT for Medium-Voltage Converter Under the Same dv/dt Conditions
Kasunaidu Vechalapu;Subhashish Bhattacharya;Edward Van Brunt;Sei-Hyung Ryu.
IEEE Journal of Emerging and Selected Topics in Power Electronics (2017)
Recent progress in SiC DMOSFETs and JBS diodes at Cree
R.J. Callanan;A. Agarwal;A. Burk;M. Das.
conference of the industrial electronics society (2008)
1000-V, 30-A 4H-SiC BJTs with high current gain
S. Krishnaswami;A. Agarwal;Sei-Hyung Ryu;C. Capell.
IEEE Electron Device Letters (2005)
If you think any of the details on this page are incorrect, let us know.
We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below: