H-Index & Metrics Best Publications

H-Index & Metrics

Discipline name H-index Citations Publications World Ranking National Ranking
Electronics and Electrical Engineering D-index 34 Citations 4,961 141 World Ranking 2655 National Ranking 306

Overview

What is he best known for?

The fields of study he is best known for:

  • Semiconductor
  • Electrical engineering
  • Electron

His main research concerns Optoelectronics, Electrical engineering, Silicon carbide, Wide-bandgap semiconductor and MOSFET. His work investigates the relationship between Optoelectronics and topics such as Layer that intersect with problems in Blocking. Power MOSFET, Power semiconductor device, Insulated-gate bipolar transistor, Voltage and High voltage are subfields of Electrical engineering in which his conducts study.

His Power MOSFET research focuses on subjects like Threshold voltage, which are linked to Capacitance and Transconductance. The concepts of his Power semiconductor device study are interwoven with issues in Power factor and Voltage optimisation. His research integrates issues of Semiconductor, Particle detector, Electronic engineering and Silicon in his study of Silicon carbide.

His most cited work include:

  • Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence (164 citations)
  • A New Degradation Mechanism in High-Voltage SiC Power MOSFETs (150 citations)
  • Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV (150 citations)

What are the main themes of his work throughout his whole career to date?

His primary areas of study are Optoelectronics, Electrical engineering, Silicon carbide, MOSFET and Wide-bandgap semiconductor. His studies deal with areas such as Transistor, Power semiconductor device, High voltage, Voltage and Layer as well as Optoelectronics. His study in Insulated-gate bipolar transistor, Power MOSFET, Diode, Bipolar junction transistor and Threshold voltage falls under the purview of Electrical engineering.

Sei-Hyung Ryu has included themes like Switching time and Silicon in his Power MOSFET study. His Silicon carbide research integrates issues from Doping, Semiconductor, Thyristor, Electronic engineering and Gate oxide. His studies in MOSFET integrate themes in fields like Condensed matter physics and Reliability.

He most often published in these fields:

  • Optoelectronics (69.95%)
  • Electrical engineering (49.74%)
  • Silicon carbide (46.63%)

What were the highlights of his more recent work (between 2013-2020)?

  • Electrical engineering (49.74%)
  • Optoelectronics (69.95%)
  • Silicon carbide (46.63%)

In recent papers he was focusing on the following fields of study:

His primary areas of investigation include Electrical engineering, Optoelectronics, Silicon carbide, MOSFET and High voltage. His Optoelectronics research is multidisciplinary, incorporating elements of Layer, Thermal conduction, Breakdown voltage and Gate oxide. The Silicon carbide study combines topics in areas such as Thyristor, Pulsed power, Power electronics, Voltage drop and Bevel.

His study in MOSFET is interdisciplinary in nature, drawing from both Silicon and Power semiconductor device. Sei-Hyung Ryu focuses mostly in the field of High voltage, narrowing it down to topics relating to Capacitor and, in certain cases, Rise time. His study focuses on the intersection of Voltage and fields such as Electronic circuit with connections in the field of Resistor.

Between 2013 and 2020, his most popular works were:

  • Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV (150 citations)
  • Comparative Evaluation of 15-kV SiC MOSFET and 15-kV SiC IGBT for Medium-Voltage Converter Under the Same dv/dt Conditions (45 citations)
  • 22 kV, 1 cm 2 , 4H-SiC n-IGBTs with improved conductivity modulation (45 citations)

In his most recent research, the most cited papers focused on:

  • Semiconductor
  • Electron
  • Electrical engineering

Electrical engineering, MOSFET, Voltage, Silicon carbide and Optoelectronics are his primary areas of study. His work focuses on many connections between Electrical engineering and other disciplines, such as Engineering physics, that overlap with his field of interest in Negative-bias temperature instability, Schottky diode, Power cycling and Time-dependent gate oxide breakdown. His biological study spans a wide range of topics, including High voltage and Power semiconductor device.

His study of Power MOSFET is a part of Voltage. The study incorporates disciplines such as Gate driver and Gate oxide in addition to Silicon carbide. His research in Optoelectronics tackles topics such as Breakdown voltage which are related to areas like Wide-bandgap semiconductor and Silicon.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence

T.R. McNutt;A.R. Hefner;H.A. Mantooth;D. Berning.
IEEE Transactions on Power Electronics (2007)

270 Citations

1800 V NPN bipolar junction transistors in 4H-SiC

Sei-Hyung Ryu;A.K. Agarwal;R. Singh;J.W. Palmour.
IEEE Electron Device Letters (2001)

224 Citations

Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV

J. W. Palmour;L. Cheng;V. Pala;E. V. Brunt.
international symposium on power semiconductor devices and ic's (2014)

221 Citations

A New Degradation Mechanism in High-Voltage SiC Power MOSFETs

A. Agarwal;H. Fatima;S. Haney;Sei-Hyung Ryu.
IEEE Electron Device Letters (2007)

208 Citations

SiC Power Devices for Microgrids

Qingchun Zhang;R Callanan;M K Das;Sei-Hyung Ryu.
IEEE Transactions on Power Electronics (2010)

166 Citations

10-kV, 123-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC power DMOSFETs

Sei-Hyung Ryu;S. Krishnaswami;M. O'Loughlin;J. Richmond.
IEEE Electron Device Letters (2004)

164 Citations

Recent progress in SiC DMOSFETs and JBS diodes at Cree

R.J. Callanan;A. Agarwal;A. Burk;M. Das.
conference of the industrial electronics society (2008)

119 Citations

Comparative Evaluation of 15-kV SiC MOSFET and 15-kV SiC IGBT for Medium-Voltage Converter Under the Same dv/dt Conditions

Kasunaidu Vechalapu;Subhashish Bhattacharya;Edward Van Brunt;Sei-Hyung Ryu.
IEEE Journal of Emerging and Selected Topics in Power Electronics (2017)

109 Citations

1000-V, 30-A 4H-SiC BJTs with high current gain

S. Krishnaswami;A. Agarwal;Sei-Hyung Ryu;C. Capell.
IEEE Electron Device Letters (2005)

107 Citations

Relationship between 4H-SiC∕SiO2 transition layer thickness and mobility

T. L. Biggerstaff;C. L. Reynolds;T. Zheleva;A. Lelis.
Applied Physics Letters (2009)

106 Citations

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