What is he best known for?
The fields of study Sei-Hyung Ryu is best known for:
- Transistor
- MOSFET
- Semiconductor
His work in Electrical engineering is not limited to one particular discipline; it also encompasses Logic gate.
Sei-Hyung Ryu merges many fields, such as Logic gate and Transistor, in his writings.
In his research, Sei-Hyung Ryu performs multidisciplinary study on Transistor and Thyristor.
His multidisciplinary approach integrates Thyristor and Gate turn-off thyristor in his work.
His studies link Switching time with Optoelectronics.
Many of his studies involve connections with topics such as Transconductance and Voltage.
As part of his studies on Silicon carbide, he often connects relevant subjects like Metallurgy.
Many of his studies involve connections with topics such as Silicon and Metallurgy.
He integrates Silicon with Silicon carbide in his study.
His most cited work include:
- A New Degradation Mechanism in High-Voltage SiC Power MOSFETs (198 citations)
- Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence (192 citations)
- 1800 V NPN bipolar junction transistors in 4H-SiC (151 citations)
What are the main themes of his work throughout his whole career to date
His work investigates the relationship between Metallurgy and topics such as Silicon carbide that intersect with problems in Composite material.
In his works, Sei-Hyung Ryu performs multidisciplinary study on Composite material and Silicon carbide.
His study on Optoelectronics is interrelated to topics such as Common emitter and Doping.
Doping is frequently linked to Optoelectronics in his study.
His Voltage research encompasses a variety of disciplines, including Gate oxide, Field-effect transistor and High voltage.
In his papers, Sei-Hyung Ryu integrates diverse fields, such as Field-effect transistor and Transistor.
Sei-Hyung Ryu integrates many fields in his works, including Transistor and Threshold voltage.
While working on this project, he studies both Threshold voltage and MOSFET.
Sei-Hyung Ryu combines MOSFET and Power MOSFET in his research.
Sei-Hyung Ryu most often published in these fields:
- Electrical engineering (91.89%)
- Optoelectronics (89.19%)
- Voltage (82.43%)
What were the highlights of his more recent work (between 2013-2019)?
- Voltage (100.00%)
- Electrical engineering (100.00%)
- Optoelectronics (88.89%)
In recent works Sei-Hyung Ryu was focusing on the following fields of study:
His work in Injector covers topics such as Mechanical engineering which are related to areas like Drop (telecommunication).
His Drop (telecommunication) study often links to related topics such as Mechanical engineering.
His Composite material study frequently involves adjacent topics like Layer (electronics) and Temperature coefficient.
His Composite material research extends to the thematically linked field of Layer (electronics).
In his work, he performs multidisciplinary research in Temperature coefficient and Voltage.
His Converters research extends to the thematically linked field of Voltage.
He's looking at Power (physics) as part of his Reliability (semiconductor), Power semiconductor device, Rectification and Gate driver and Power (physics) study.
His work in Reliability (semiconductor) is not limited to one particular discipline; it also encompasses Power (physics).
Power semiconductor device is closely attributed to Quantum mechanics in his research.
Between 2013 and 2019, his most popular works were:
- Comparative Evaluation of 15-kV SiC MOSFET and 15-kV SiC IGBT for Medium-Voltage Converter Under the Same <italic>dv/dt</italic> Conditions (64 citations)
- A 4H Silicon Carbide Gate Buffer for Integrated Power Systems (33 citations)
- 20 kV 4H-SiC N-IGBTs (21 citations)
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