World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
49
Citations
7882
World Ranking
2985
National Ranking
1117

Overview

Sei-Hyung Ryu is affiliated with Wolfspeed, Inc. in the United States and has focused research efforts primarily in engineering, with a specialization in electrical and electronic engineering. Their work spans several subfields including electronic, optical and magnetic materials, materials chemistry, atomic and molecular physics, and computational mechanics.

The scientist's research contributions have been published extensively in areas related to semiconductor technologies and device engineering. Main topics of their work include silicon carbide semiconductor technologies, semiconductor materials and devices, electromagnetic compatibility and noise suppression, advancements in semiconductor devices and circuit design, electrostatic discharge in electronics, copper interconnects and reliability, and radiation effects in electronics.

Sei-Hyung Ryu has authored multiple papers, some of which include:

  • Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs, 2022, 2022 IEEE International Reliability Physics Symposium (IRPS)
  • Improvements to the Analytical Model to Describe UIS Events, 2022, IEEE Transactions on Electron Devices
  • Outlook for Dielectric/SiC Interfaces for Future Generation MOSFETs, 2023, Materials science forum
  • Study of Dopant Activation and Ionization for Phosphorus in 4H-SiC, 2024, Journal of Electronic Materials
  • Modeling methodology for thermo-structural analysis of V-NAND flash memory structure, 2025, Scientific Reports

Frequent coauthors in their research include Daniel J. Lichtenwalner, Brett Hull, Hemant Dixit, Jae Hyung Park, and Suman Das.

Sei-Hyung Ryu's work has appeared repeatedly in several publication venues such as Materials science forum, Diffusion and defect data along with solid state phenomena, Key engineering materials, Journal of Electronic Materials, and IEEE Transactions on Electron Devices.

Best Publications

  • Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV

    J. W. Palmour;L. Cheng;V. Pala;E. V. Brunt

  • Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence

    T.R. McNutt;A.R. Hefner;H.A. Mantooth;D. Berning

  • A New Degradation Mechanism in High-Voltage SiC Power MOSFETs

    A. Agarwal;H. Fatima;S. Haney;Sei-Hyung Ryu

  • 1800 V NPN bipolar junction transistors in 4H-SiC

    Sei-Hyung Ryu;A.K. Agarwal;R. Singh;J.W. Palmour

  • SiC Power Devices for Microgrids

    Qingchun Zhang;R Callanan;M K Das;Sei-Hyung Ryu

  • 10-kV, 123-m/spl Omega//spl middot/cm/sup 2/ 4H-SiC power DMOSFETs

    Sei-Hyung Ryu;S. Krishnaswami;M. O'Loughlin;J. Richmond

  • Comparative Evaluation of 15-kV SiC MOSFET and 15-kV SiC IGBT for Medium-Voltage Converter Under the Same dv/dt Conditions

    Kasunaidu Vechalapu;Subhashish Bhattacharya;Edward Van Brunt;Sei-Hyung Ryu

  • Silicon carbide power devices with self-aligned source and well regions

    Sei-Hyung Ryu

  • High-resolution alpha-particle spectrometry using 4H silicon carbide semiconductor detectors

    F.H. Ruddy;J.G. Seidel;Haoqian Chen;A.R. Dulloo

  • Recent progress in SiC DMOSFETs and JBS diodes at Cree

    R.J. Callanan;A. Agarwal;A. Burk;M. Das

  • The fast neutron response of 4H silicon carbide semiconductor radiation detectors

    F.H. Ruddy;A.R. Dulloo;J.G. Seidel;M.K. Das

  • Characterization of 15 kV SiC n-IGBT and its application considerations for high power converters

    Arun Kadavelugu;Subhashish Bhattacharya;Sei-Hyung Ryu;Edward Van Brunt

  • 1000-V, 30-A 4H-SiC BJTs with high current gain

    S. Krishnaswami;A. Agarwal;Sei-Hyung Ryu;C. Capell

  • Relationship between 4H-SiC∕SiO2 transition layer thickness and mobility

    T. L. Biggerstaff;C. L. Reynolds;T. Zheleva;A. Lelis

  • METHOD OF PROCESSING SEMICONDUCTOR WAFER HAVING SILICON CARBIDE POWER DEVICE

    Agarwal Anant;Ryu Si Hoon;Matt Donofrio

  • Digital CMOS IC's in 6H-SiC operating on a 5-V power supply

    Sei-Hyung Ryu;K.T. Kornegay;J.A. Cooper;M.R. Melloch

  • 10 kV, 5A 4H-SiC Power DMOSFET

    Sei-Hyung Ryu;S. Krishnaswami;B. Hull;J. Richmond

  • Reliability and stability of SiC power mosfets and next-generation SiC MOSFETs

    B. Hull;S. Allen;Q. Zhang;D. Gajewski

  • 22 kV, 1 cm 2 , 4H-SiC n-IGBTs with improved conductivity modulation

    E. V. Brunt;L. Cheng;M. O'Loughlin;C. Capell

  • High Temperature, High Current, 4H-SiC Accu-DMOSFET

    Ranbir Singh;Sei Hyung Ryu;John W. Palmour

  • Comparative evaluation of 15 kV SiC MOSFET and 15 kV SiC IGBT for medium voltage converter under same dv/dt conditions

    Kasunaidu Vechalapu;Subhashish Bhattacharya;Edward Van Brunt;Sei-Hyung Ryu

Frequent Co-Authors

Anant K. Agarwal
Anant K. Agarwal The Ohio State University
Subhashish Bhattacharya
Subhashish Bhattacharya North Carolina State University
Sokrates T. Pantelides
Sokrates T. Pantelides Vanderbilt University
Ronald D. Schrimpf
Ronald D. Schrimpf Vanderbilt University
Ranbir Singh
Ranbir Singh Indian Institute of Technology Mandi
Daniel M. Fleetwood
Daniel M. Fleetwood Vanderbilt University
John R. Williams
John R. Williams Auburn University
T.P. Chow
T.P. Chow Rensselaer Polytechnic Institute
Alex Q. Huang
Alex Q. Huang The University of Texas at Austin
Leonard C. Feldman
Leonard C. Feldman Rutgers, The State University of New Jersey

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