His primary areas of investigation include Optoelectronics, Condensed matter physics, Epitaxy, Molecular beam epitaxy and Analytical chemistry. The various areas that Hajime Okumura examines in his Optoelectronics study include Single crystal, Breakdown voltage, Voltage and Time-dependent gate oxide breakdown, Gate oxide. His Condensed matter physics research integrates issues from Conduction band, Spontaneous emission and Hall effect.
His Epitaxy research incorporates elements of Wafer, Chemical vapor deposition, Field-effect transistor, Annealing and Substrate. The Molecular beam epitaxy study combines topics in areas such as Electron diffraction, Diffraction, Crystallography, Sapphire and Wide-bandgap semiconductor. His study focuses on the intersection of Analytical chemistry and fields such as Surface reconstruction with connections in the field of Arsenic.
His scientific interests lie mostly in Optoelectronics, Epitaxy, Analytical chemistry, Molecular beam epitaxy and Condensed matter physics. In his study, Vicinal is inextricably linked to Sapphire, which falls within the broad field of Optoelectronics. His Epitaxy study integrates concerns from other disciplines, such as Wafer, Substrate and Chemical vapor deposition.
His research in Analytical chemistry focuses on subjects like Doping, which are connected to Electrical resistivity and conductivity. Hajime Okumura has included themes like Plasma, Crystallography, Thin film, Diffraction and Photoluminescence in his Molecular beam epitaxy study. His biological study spans a wide range of topics, including Transmission electron microscopy, Stacking and Reflection high-energy electron diffraction.
His primary scientific interests are in Optoelectronics, Condensed matter physics, Epitaxy, Doping and Composite material. His Optoelectronics research is multidisciplinary, incorporating elements of MOSFET and Voltage. In Condensed matter physics, he works on issues like Nitriding, which are connected to Conduction band.
His research integrates issues of Scientific method, Scanning transmission electron microscopy, Trench, Stacking and Substrate in his study of Epitaxy. His Doping research is multidisciplinary, incorporating perspectives in Thermal conduction, Aluminium, Electrical resistivity and conductivity and Analytical chemistry. Hajime Okumura works mostly in the field of Analytical chemistry, limiting it down to topics relating to Nonlinear system and, in certain cases, Deep-level transient spectroscopy.
Hajime Okumura mostly deals with Condensed matter physics, Optoelectronics, Stacking, Diode and Trench. His work on Doping as part of general Condensed matter physics study is frequently connected to Edge, therefore bridging the gap between diverse disciplines of science and establishing a new relationship between them. His research in Optoelectronics is mostly concerned with Carrier lifetime.
His Stacking study integrates concerns from other disciplines, such as Crystallography, Dislocation, Molecular physics and PIN diode. His Trench study combines topics in areas such as Ion implantation, Deposition, Epitaxy and Void. Hajime Okumura works mostly in the field of Epitaxy, limiting it down to concerns involving Chemical vapor deposition and, occasionally, Etching.
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Present Status and Future Prospect of Widegap Semiconductor High-Power Devices
Japanese Journal of Applied Physics (2006)
Epitaxial growth of cubic and hexagonal GaN on GaAs by gas‐source molecular‐beam epitaxy
H. Okumura;S. Misawa;S. Yoshida.
Applied Physics Letters (1991)
Growth and characterization of cubic GaN
H. Okumura;K. Ohta;G. Feuillet;K. Balakrishnan.
Journal of Crystal Growth (1997)
GAN HETEROEPITAXIAL GROWTH ON SILICON NITRIDE BUFFER LAYERS FORMED ON SI (111) SURFACES BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY
Yoshinobu Nakada;Igor Aksenov;Hajime Okumura.
Applied Physics Letters (1998)
Intrinsic defects in cubic silicon carbide
H. Itoh;A. Kawasuso;T. Ohshima;M. Yoshikawa.
Physica Status Solidi (a) (1997)
Monochromator for a soft X-ray photochemistry beamline BL27SU of SPring-8
H. Ohashi;E. Ishiguro;Y. Tamenori;H. Okumura.
Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment (2001)
The origin of persistent photoconductivity and its relationship with yellow luminescence in molecular beam epitaxy grown undoped GaN
C. V. Reddy;K. Balakrishnan;H. Okumura;S. Yoshida.
Applied Physics Letters (1998)
Monitoring surface stoichiometry with the (2×2) reconstruction during growth of hexagonal‐phase GaN by molecular beam epitaxy
P. Hacke;G. Feuillet;H. Okumura;S. Yoshida.
Applied Physics Letters (1996)
Raman scattering of SiC: Application to the identification of heteroepitaxy of SiC polytypes
H. Okumura;E. Sakuma;J. H. Lee;H. Mukaida.
Journal of Applied Physics (1987)
Determination of the conduction‐band discontinuities of GaAs/AlxGa1−xAs interfaces by capacitance‐voltage measurements
H. Okumura;S. Misawa;S. Yoshida;S. Gonda.
Applied Physics Letters (1985)
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