D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 55 Citations 9,701 625 World Ranking 5732 National Ranking 341

Overview

What is he best known for?

The fields of study he is best known for:

  • Electron
  • Semiconductor
  • Organic chemistry

His primary areas of investigation include Optoelectronics, Condensed matter physics, Epitaxy, Molecular beam epitaxy and Analytical chemistry. The various areas that Hajime Okumura examines in his Optoelectronics study include Single crystal, Breakdown voltage, Voltage and Time-dependent gate oxide breakdown, Gate oxide. His Condensed matter physics research integrates issues from Conduction band, Spontaneous emission and Hall effect.

His Epitaxy research incorporates elements of Wafer, Chemical vapor deposition, Field-effect transistor, Annealing and Substrate. The Molecular beam epitaxy study combines topics in areas such as Electron diffraction, Diffraction, Crystallography, Sapphire and Wide-bandgap semiconductor. His study focuses on the intersection of Analytical chemistry and fields such as Surface reconstruction with connections in the field of Arsenic.

His most cited work include:

  • Present Status and Future Prospect of Widegap Semiconductor High-Power Devices (230 citations)
  • Epitaxial growth of cubic and hexagonal GaN on GaAs by gas‐source molecular‐beam epitaxy (181 citations)
  • Monochromator for a soft X-ray photochemistry beamline BL27SU of SPring-8 (156 citations)

What are the main themes of his work throughout his whole career to date?

His scientific interests lie mostly in Optoelectronics, Epitaxy, Analytical chemistry, Molecular beam epitaxy and Condensed matter physics. In his study, Vicinal is inextricably linked to Sapphire, which falls within the broad field of Optoelectronics. His Epitaxy study integrates concerns from other disciplines, such as Wafer, Substrate and Chemical vapor deposition.

His research in Analytical chemistry focuses on subjects like Doping, which are connected to Electrical resistivity and conductivity. Hajime Okumura has included themes like Plasma, Crystallography, Thin film, Diffraction and Photoluminescence in his Molecular beam epitaxy study. His biological study spans a wide range of topics, including Transmission electron microscopy, Stacking and Reflection high-energy electron diffraction.

He most often published in these fields:

  • Optoelectronics (44.06%)
  • Epitaxy (22.17%)
  • Analytical chemistry (18.74%)

What were the highlights of his more recent work (between 2014-2021)?

  • Optoelectronics (44.06%)
  • Condensed matter physics (16.02%)
  • Epitaxy (22.17%)

In recent papers he was focusing on the following fields of study:

His primary scientific interests are in Optoelectronics, Condensed matter physics, Epitaxy, Doping and Composite material. His Optoelectronics research is multidisciplinary, incorporating elements of MOSFET and Voltage. In Condensed matter physics, he works on issues like Nitriding, which are connected to Conduction band.

His research integrates issues of Scientific method, Scanning transmission electron microscopy, Trench, Stacking and Substrate in his study of Epitaxy. His Doping research is multidisciplinary, incorporating perspectives in Thermal conduction, Aluminium, Electrical resistivity and conductivity and Analytical chemistry. Hajime Okumura works mostly in the field of Analytical chemistry, limiting it down to topics relating to Nonlinear system and, in certain cases, Deep-level transient spectroscopy.

Between 2014 and 2021, his most popular works were:

  • Characterization of traps at nitrided SiO2/SiC interfaces near the conduction band edge by using Hall effect measurements (62 citations)
  • Characterization of Traps at Nitrided SiO$_2$/SiC Interfaces near the Conduction Band Edge by using Hall Effect Measurements (54 citations)
  • Development of Ultrahigh-Voltage SiC Devices (52 citations)

In his most recent research, the most cited papers focused on:

  • Electron
  • Semiconductor
  • Organic chemistry

Hajime Okumura mostly deals with Condensed matter physics, Optoelectronics, Stacking, Diode and Trench. His work on Doping as part of general Condensed matter physics study is frequently connected to Edge, therefore bridging the gap between diverse disciplines of science and establishing a new relationship between them. His research in Optoelectronics is mostly concerned with Carrier lifetime.

His Stacking study integrates concerns from other disciplines, such as Crystallography, Dislocation, Molecular physics and PIN diode. His Trench study combines topics in areas such as Ion implantation, Deposition, Epitaxy and Void. Hajime Okumura works mostly in the field of Epitaxy, limiting it down to concerns involving Chemical vapor deposition and, occasionally, Etching.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

Present Status and Future Prospect of Widegap Semiconductor High-Power Devices

Hajime Okumura.
Japanese Journal of Applied Physics (2006)

370 Citations

Epitaxial growth of cubic and hexagonal GaN on GaAs by gas‐source molecular‐beam epitaxy

H. Okumura;S. Misawa;S. Yoshida.
Applied Physics Letters (1991)

281 Citations

Growth and characterization of cubic GaN

H. Okumura;K. Ohta;G. Feuillet;K. Balakrishnan.
Journal of Crystal Growth (1997)

218 Citations

GAN HETEROEPITAXIAL GROWTH ON SILICON NITRIDE BUFFER LAYERS FORMED ON SI (111) SURFACES BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY

Yoshinobu Nakada;Igor Aksenov;Hajime Okumura.
Applied Physics Letters (1998)

210 Citations

Intrinsic defects in cubic silicon carbide

H. Itoh;A. Kawasuso;T. Ohshima;M. Yoshikawa.
Physica Status Solidi (a) (1997)

197 Citations

Monochromator for a soft X-ray photochemistry beamline BL27SU of SPring-8

H. Ohashi;E. Ishiguro;Y. Tamenori;H. Okumura.
Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment (2001)

178 Citations

The origin of persistent photoconductivity and its relationship with yellow luminescence in molecular beam epitaxy grown undoped GaN

C. V. Reddy;K. Balakrishnan;H. Okumura;S. Yoshida.
Applied Physics Letters (1998)

148 Citations

Monitoring surface stoichiometry with the (2×2) reconstruction during growth of hexagonal‐phase GaN by molecular beam epitaxy

P. Hacke;G. Feuillet;H. Okumura;S. Yoshida.
Applied Physics Letters (1996)

141 Citations

Raman scattering of SiC: Application to the identification of heteroepitaxy of SiC polytypes

H. Okumura;E. Sakuma;J. H. Lee;H. Mukaida.
Journal of Applied Physics (1987)

140 Citations

Determination of the conduction‐band discontinuities of GaAs/AlxGa1−xAs interfaces by capacitance‐voltage measurements

H. Okumura;S. Misawa;S. Yoshida;S. Gonda.
Applied Physics Letters (1985)

130 Citations

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