Hajime Okumura

Overview

Best Publications

• Present Status and Future Prospect of Widegap Semiconductor High-Power Devices

  Hajime Okumura

  435
  Citations

• Epitaxial growth of cubic and hexagonal GaN on GaAs by gas‐source molecular‐beam epitaxy

  H. Okumura;S. Misawa;S. Yoshida

  289
  Citations

• Growth and characterization of cubic GaN

  H. Okumura;K. Ohta;G. Feuillet;K. Balakrishnan

  225
  Citations

• GAN HETEROEPITAXIAL GROWTH ON SILICON NITRIDE BUFFER LAYERS FORMED ON SI (111) SURFACES BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY

  Yoshinobu Nakada;Igor Aksenov;Hajime Okumura

  218
  Citations

• Intrinsic defects in cubic silicon carbide

  H. Itoh;A. Kawasuso;T. Ohshima;M. Yoshikawa

  200
  Citations

• The origin of persistent photoconductivity and its relationship with yellow luminescence in molecular beam epitaxy grown undoped GaN

  C. V. Reddy;K. Balakrishnan;H. Okumura;S. Yoshida

  152
  Citations

• Raman scattering of SiC: Application to the identification of heteroepitaxy of SiC polytypes

  H. Okumura;E. Sakuma;J. H. Lee;H. Mukaida

  151
  Citations

• Monitoring surface stoichiometry with the (2×2) reconstruction during growth of hexagonal‐phase GaN by molecular beam epitaxy

  P. Hacke;G. Feuillet;H. Okumura;S. Yoshida

  144
  Citations

• Reduction of the threading dislocation density in GaN films grown on vicinal sapphire (0001) substrates

  X. Q. Shen;H. Matsuhata;H. Okumura

  141
  Citations

• Short minority carrier lifetimes in highly nitrogen-doped 4H-SiC epilayers for suppression of the stacking fault formation in PiN diodes

  T. Tawara;T. Miyazawa;M. Ryo;M. Miyazato

  129
  Citations

• Determination of the conduction‐band discontinuities of GaAs/AlxGa1−xAs interfaces by capacitance‐voltage measurements

  H. Okumura;S. Misawa;S. Yoshida;S. Gonda

  129
  Citations

• Characterization of traps at nitrided SiO2/SiC interfaces near the conduction band edge by using Hall effect measurements

  Tetsuo Hatakeyama;Yuji Kiuchi;Mitsuru Sometani;Shinsuke Harada

  125
  Citations

• High breakdown voltage AlGaN/GaN MIS–HEMT with SiN and TiO2 gate insulator

  S. Yagi;M. Shimizu;M. Inada;Y. Yamamoto

  119
  Citations

• Localized exciton dynamics in strained cubic In0.1Ga0.9N/GaN multiple quantum wells

  S. F. Chichibu;M. Sugiyama;T. Onuma;T. Kitamura

  113
  Citations

• OPTICAL PROPERTIES NEAR THE BAND GAP ON HEXAGONAL AND CUBIC GAN

  H. Okumura;S. Yoshida;T. Okahisa

  107
  Citations

• Growth of cubic III-nitrides by gas source MBE using atomic nitrogen plasma: GaN, AlGaN and AlN

  H Okumura;H Hamaguchi;T Koizumi;K Balakrishnan

  103
  Citations

• Cloning of the Membrane-Bound Aldehyde Dehydrogenase Gene of Acetobacter polyoxogenes and Improvement of Acetic Acid Production by Use of the Cloned Gene.

  Masahiro Fukaya;Kenji Tayama;Toshimi Tamaki;Haruko Tagami

  103
  Citations

• Homoepitaxial growth of 4H-SiC on on-axis (0001) C-face substrates by chemical vapor depositon

  K. Kojima;H. Okumura;S. Kuroda;K. Arai

  102
  Citations

• Raman scattering of SiC: Estimation of the internal stress in 3C-SiC on Si

  H. Mukaida;H. Okumura;J. H. Lee;H. Daimon

  101
  Citations

• Radiation induced defects in CVD-grown 3C-SiC

  H. Itoh;M. Yoshikawa;I. Nashiyama;S. Misawa

  101
  Citations

• Raman studies on phonon modes in cubic AlGaN alloy

  H. Harima;T. Inoue;S. Nakashima;H. Okumura

  98
  Citations