H-Index & Metrics Top Publications

H-Index & Metrics

Discipline name H-index Citations Publications World Ranking National Ranking
Materials Science H-index 136 Citations 69,330 1,128 World Ranking 93 National Ranking 49

Research.com Recognitions

Awards & Achievements

2016 - Fellow, National Academy of Inventors

2009 - Fellow of American Physical Society (APS) Citation For seminal studies of strain relaxation in epitaxial films, for the development of molecular beam epitaxial growth of GaN and nonpolar orientations of nitride semiconductors, and for leadership in applications of widebandgap semiconductors to solidstate lighting

2008 - Fellow of the Materials Research Society

Overview

What is he best known for?

The fields of study he is best known for:

  • Quantum mechanics
  • Electron
  • Optics

James S. Speck focuses on Optoelectronics, Wide-bandgap semiconductor, Epitaxy, Chemical vapor deposition and Condensed matter physics. His Optoelectronics study integrates concerns from other disciplines, such as Quantum well, Molecular beam epitaxy and Optics. James S. Speck has researched Wide-bandgap semiconductor in several fields, including Band gap, High-electron-mobility transistor and Photoluminescence.

His studies deal with areas such as Wafer, Gallium nitride, Scanning electron microscope and Dislocation as well as Epitaxy. His Chemical vapor deposition research incorporates themes from Metalorganic vapour phase epitaxy, Nucleation, Transmission electron microscopy, Analytical chemistry and Sapphire. He usually deals with Condensed matter physics and limits it to topics linked to Stress relaxation and Slip.

His most cited work include:

  • Prospects for LED lighting (1397 citations)
  • Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors (762 citations)
  • Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films (752 citations)

What are the main themes of his work throughout his whole career to date?

James S. Speck spends much of his time researching Optoelectronics, Epitaxy, Molecular beam epitaxy, Wide-bandgap semiconductor and Analytical chemistry. The concepts of his Optoelectronics study are interwoven with issues in Quantum well, Gallium nitride and Optics. The Epitaxy study combines topics in areas such as Crystallography, Dislocation, Thin film and Chemical vapor deposition.

His Molecular beam epitaxy study incorporates themes from Crystal growth, Electron mobility and Plasma. The study incorporates disciplines such as Transistor and Semiconductor in addition to Wide-bandgap semiconductor. His Analytical chemistry research is multidisciplinary, incorporating perspectives in Impurity and Doping.

He most often published in these fields:

  • Optoelectronics (55.18%)
  • Epitaxy (18.87%)
  • Molecular beam epitaxy (18.34%)

What were the highlights of his more recent work (between 2015-2021)?

  • Optoelectronics (55.18%)
  • Light-emitting diode (16.36%)
  • Diode (15.30%)

In recent papers he was focusing on the following fields of study:

The scientist’s investigation covers issues in Optoelectronics, Light-emitting diode, Diode, Molecular beam epitaxy and Analytical chemistry. His work focuses on many connections between Optoelectronics and other disciplines, such as Nitride, that overlap with his field of interest in Tunnel junction. In his study, which falls under the umbrella issue of Light-emitting diode, Photoluminescence, Condensed matter physics, Wavelength, Spectroscopy and Electric field is strongly linked to Quantum well.

James S. Speck combines subjects such as Visible light communication and Solid-state lighting with his study of Diode. His research investigates the link between Molecular beam epitaxy and topics such as Doping that cross with problems in Hall effect. His Analytical chemistry research is multidisciplinary, incorporating elements of Gallium nitride, Atom probe, Electron mobility, Growth rate and Impurity.

Between 2015 and 2021, his most popular works were:

  • Donors and deep acceptors in β-Ga2O3 (97 citations)
  • Donors and Deep Acceptors in $eta$-Ga2O3. (92 citations)
  • Demonstration of β-(AlxGa1-x)2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy (92 citations)

In his most recent research, the most cited papers focused on:

  • Quantum mechanics
  • Electron
  • Semiconductor

James S. Speck mostly deals with Optoelectronics, Light-emitting diode, Analytical chemistry, Molecular beam epitaxy and Optics. His studies in Optoelectronics integrate themes in fields like Quantum well, Laser and Metalorganic vapour phase epitaxy. His Light-emitting diode research is multidisciplinary, relying on both Electric field, Tunnel junction, Carrier lifetime, Sapphire and Nitride.

His research integrates issues of Gallium nitride, Acceptor, Substrate and Plasma in his study of Analytical chemistry. His Molecular beam epitaxy study combines topics in areas such as Heterojunction, Charge density and Doping. His studies in Wide-bandgap semiconductor integrate themes in fields like Transistor and Dislocation.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Top Publications

Prospects for LED lighting

Siddha Pimputkar;James S. Speck;Steven P. DenBaars;Shuji Nakamura.
Nature Photonics (2009)

1722 Citations

Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

J. P. Ibbetson;P. T. Fini;K. D. Ness;S. P. DenBaars.
Applied Physics Letters (2000)

1059 Citations

Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

B. Heying;X. H. Wu;S. Keller;Y. Li.
Applied Physics Letters (1996)

1033 Citations

Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.

Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell.
Nature Materials (2006)

717 Citations

Strain-induced polarization in wurtzite III-nitride semipolar layers

A. E. Romanov;T. J. Baker;S. Nakamura;J. S. Speck.
Journal of Applied Physics (2006)

700 Citations

DOMAIN CONFIGURATIONS DUE TO MULTIPLE MISFIT RELAXATION MECHANISMS IN EPITAXIAL FERROELECTRIC THIN FILMS. I: THEORY

J. S. Speck;W. Pompe.
Journal of Applied Physics (1994)

647 Citations

Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop.

Justin Iveland;Lucio Martinelli;Jacques Peretti;James S. Speck.
Physical Review Letters (2013)

626 Citations

Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire

M. D. Craven;S. H. Lim;F. Wu;J. S. Speck.
Applied Physics Letters (2002)

589 Citations

Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy

B. Heying;R. Averbeck;L. F. Chen;E. Haus.
Journal of Applied Physics (2000)

544 Citations

Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3

X. H. Wu;L. M. Brown;D. Kapolnek;S. Keller.
Journal of Applied Physics (1996)

530 Citations

Profile was last updated on December 6th, 2021.
Research.com Ranking is based on data retrieved from the Microsoft Academic Graph (MAG).
The ranking h-index is inferred from publications deemed to belong to the considered discipline.

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