2023 - Research.com Materials Science in United States Leader Award
2016 - Fellow, National Academy of Inventors
2009 - Fellow of American Physical Society (APS) Citation For seminal studies of strain relaxation in epitaxial films, for the development of molecular beam epitaxial growth of GaN and nonpolar orientations of nitride semiconductors, and for leadership in applications of widebandgap semiconductors to solidstate lighting
2008 - Fellow of the Materials Research Society
James S. Speck focuses on Optoelectronics, Wide-bandgap semiconductor, Epitaxy, Chemical vapor deposition and Condensed matter physics. His Optoelectronics study integrates concerns from other disciplines, such as Quantum well, Molecular beam epitaxy and Optics. James S. Speck has researched Wide-bandgap semiconductor in several fields, including Band gap, High-electron-mobility transistor and Photoluminescence.
His studies deal with areas such as Wafer, Gallium nitride, Scanning electron microscope and Dislocation as well as Epitaxy. His Chemical vapor deposition research incorporates themes from Metalorganic vapour phase epitaxy, Nucleation, Transmission electron microscopy, Analytical chemistry and Sapphire. He usually deals with Condensed matter physics and limits it to topics linked to Stress relaxation and Slip.
James S. Speck spends much of his time researching Optoelectronics, Epitaxy, Molecular beam epitaxy, Wide-bandgap semiconductor and Analytical chemistry. The concepts of his Optoelectronics study are interwoven with issues in Quantum well, Gallium nitride and Optics. The Epitaxy study combines topics in areas such as Crystallography, Dislocation, Thin film and Chemical vapor deposition.
His Molecular beam epitaxy study incorporates themes from Crystal growth, Electron mobility and Plasma. The study incorporates disciplines such as Transistor and Semiconductor in addition to Wide-bandgap semiconductor. His Analytical chemistry research is multidisciplinary, incorporating perspectives in Impurity and Doping.
The scientist’s investigation covers issues in Optoelectronics, Light-emitting diode, Diode, Molecular beam epitaxy and Analytical chemistry. His work focuses on many connections between Optoelectronics and other disciplines, such as Nitride, that overlap with his field of interest in Tunnel junction. In his study, which falls under the umbrella issue of Light-emitting diode, Photoluminescence, Condensed matter physics, Wavelength, Spectroscopy and Electric field is strongly linked to Quantum well.
James S. Speck combines subjects such as Visible light communication and Solid-state lighting with his study of Diode. His research investigates the link between Molecular beam epitaxy and topics such as Doping that cross with problems in Hall effect. His Analytical chemistry research is multidisciplinary, incorporating elements of Gallium nitride, Atom probe, Electron mobility, Growth rate and Impurity.
James S. Speck mostly deals with Optoelectronics, Light-emitting diode, Analytical chemistry, Molecular beam epitaxy and Optics. His studies in Optoelectronics integrate themes in fields like Quantum well, Laser and Metalorganic vapour phase epitaxy. His Light-emitting diode research is multidisciplinary, relying on both Electric field, Tunnel junction, Carrier lifetime, Sapphire and Nitride.
His research integrates issues of Gallium nitride, Acceptor, Substrate and Plasma in his study of Analytical chemistry. His Molecular beam epitaxy study combines topics in areas such as Heterojunction, Charge density and Doping. His studies in Wide-bandgap semiconductor integrate themes in fields like Transistor and Dislocation.
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Prospects for LED lighting
Siddha Pimputkar;James S. Speck;Steven P. DenBaars;Shuji Nakamura.
Nature Photonics (2009)
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
J. P. Ibbetson;P. T. Fini;K. D. Ness;S. P. DenBaars.
Applied Physics Letters (2000)
Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films
B. Heying;X. H. Wu;S. Keller;Y. Li.
Applied Physics Letters (1996)
Strain-induced polarization in wurtzite III-nitride semipolar layers
A. E. Romanov;T. J. Baker;S. Nakamura;J. S. Speck.
Journal of Applied Physics (2006)
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.
Shigefusa F. Chichibu;Akira Uedono;Akira Uedono;Takeyoshi Onuma;Benjamin A. Haskell.
Nature Materials (2006)
Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop.
Justin Iveland;Lucio Martinelli;Jacques Peretti;James S. Speck.
Physical Review Letters (2013)
DOMAIN CONFIGURATIONS DUE TO MULTIPLE MISFIT RELAXATION MECHANISMS IN EPITAXIAL FERROELECTRIC THIN FILMS. I: THEORY
J. S. Speck;W. Pompe.
Journal of Applied Physics (1994)
Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire
M. D. Craven;S. H. Lim;F. Wu;J. S. Speck.
Applied Physics Letters (2002)
Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3
X. H. Wu;L. M. Brown;D. Kapolnek;S. Keller.
Journal of Applied Physics (1996)
Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy
B. Heying;R. Averbeck;L. F. Chen;E. Haus.
Journal of Applied Physics (2000)
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