Gregor Koblmüller

Overview

Best Publications

• Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature

  Benedikt Mayer;Daniel Rudolph;Joscha Schnell;Stefanie Morkötter

  271
  Citations

• In-polar InN grown by plasma-assisted molecular beam epitaxy

  Chad S. Gallinat;Gregor Koblmüller;Jay S. Brown;Sarah Bernardis

  207
  Citations

• Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy

  S. Hertenberger;D. Rudolph;M. Bichler;J. J. Finley

  196
  Citations

• A growth diagram for plasma-assisted molecular beam epitaxy of In-face InN

  C. S. Gallinat;G. Koblmüller;J. S. Brown;J. S. Speck

  181
  Citations

• Monolithically Integrated High-β Nanowire Lasers on Silicon

  B. Mayer;L. Janker;B. Loitsch;J. Treu

  162
  Citations

• Spontaneous Alloy Composition Ordering in GaAs-AlGaAs Core–Shell Nanowires

  Daniel Rudolph;Stefan Funk;Markus Döblinger;Stefanie Morkötter

  158
  Citations

• Direct Observation of a Noncatalytic Growth Regime for GaAs Nanowires

  Daniel Rudolph;Simon Hertenberger;Stefanie Bolte;Stefanie Bolte;Watcharapong Paosangthong

  155
  Citations

• Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxy.

  Koblmuller G;Hertenberger S;Vizbaras K;Bichler M

  149
  Citations

• Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy

  G. Koblmüller;C. S. Gallinat;S. Bernardis;J. S. Speck

  134
  Citations

• In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction

  S. Fernández-Garrido;G. Koblmüller;E. Calleja;J. S. Speck

  131
  Citations

• Dislocation-induced thermal transport anisotropy in single-crystal group-III nitride films

  Bo Sun;Bo Sun;Georg Haunschild;Carlos Polanco;James Zi-Jian Ju

  131
  Citations

• Thermal conductivity of GaAs nanowires studied by micro-Raman spectroscopy combined with laser heating

  Martin Soini;Ilaria Zardo;Emanuele Uccelli;Stefan Funk

  123
  Citations

• In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001) GaN

  G. Koblmüller;S. Fernández-Garrido;E. Calleja;J. S. Speck

  120
  Citations

• Surface kinetics and thermal instability of N-face InN grown by plasma-assisted molecular beam epitaxy

  G. Koblmüller;C. S. Gallinat;J. S. Speck

  112
  Citations

• Direct observation of different equilibrium Ga adlayer coverages and their desorption kinetics on GaN (0001) and (0001̄) surfaces

  Gregor Koblmüller;Gregor Koblmüller;Robert Averbeck;Henning Riechert;Peter Pongratz

  108
  Citations

• Growth and properties of InGaAs nanowires on silicon

  Gregor Koblmüller;Gerhard Abstreiter

  107
  Citations

• Excitation wavelength dependence of terahertz emission from InN and InAs

  Grace D. Chern;Eric D. Readinger;Hongen Shen;Michael Wraback

  106
  Citations

• Evaluation of threading dislocation densities in In- and N-face InN

  C. S. Gallinat;G. Koblmüller;Feng Wu;J. S. Speck

  100
  Citations

• Enhanced Luminescence Properties of InAs–InAsP Core–Shell Nanowires

  Julian Treu;Michael Bormann;Hannes Schmeiduch;Markus Döblinger

  96
  Citations

• Absence of vapor-liquid-solid growth during molecular beam epitaxy of self-induced InAs nanowires on Si

  S. Hertenberger;D. Rudolph;S. Bolte;M. Döblinger

  93
  Citations

• High electron mobility GaN grown under N-rich conditions by plasma-assisted molecular beam epitaxy

  G. Koblmüller;F. Wu;T. Mates;J. S. Speck

  89
  Citations