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D-Index & Metrics

Materials Science

D-Index
51
Citations
6808
World Ranking
10047
National Ranking
561

Gregor Koblmüller publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Gregor Koblmüller sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 203 publications — 31st percentile

31% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Gregor Koblmüller D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Gregor Koblmüller sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 51 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Gregor Koblmüller is affiliated with the Technical University of Munich in Germany. Their research activities span areas within Engineering and Physics and Astronomy, with particular focus on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, and Biomedical Engineering, among other subfields.

Their work emphasizes topics that include Nanowire Synthesis and Applications, Semiconductor Quantum Structures and Devices, Advancements in Semiconductor Devices and Circuit Design, Photonic and Optical Devices, and Quantum Dots Synthesis and Properties. Additional topics include Semiconductor materials and interfaces and GaN-based semiconductor devices and materials.

Gregor Koblmüller has published several recent papers, reflecting ongoing research interests. Some of these include:

  • GaN thermal transport limited by the interplay of dislocations and size effects, 2020, Physical review. B./Physical review. B
  • Low-threshold strain-compensated InGaAs/(In,Al)GaAs multi-quantum well nanowire lasers emitting near 1.3 μm at room temperature, 2021, Applied Physics Letters
  • Ultrafast electron cycloids driven by the transverse spin of a surface acoustic wave, 2021, Science Advances
  • Demonstration of n-type behavior in catalyst-free Si-doped GaAs nanowires grown by molecular beam epitaxy, 2020, Applied Physics Letters
  • Role of twin defects on growth dynamics and size distribution of undoped and Si-doped GaAs nanowires by selective area epitaxy, 2022, Journal of Applied Physics

These papers have appeared in venues where Gregor Koblmüller frequently publishes. The most common publication venues include:

  • Applied Physics Letters
  • arXiv (Cornell University)
  • Physical review. B./Physical review. B
  • Nanotechnology
  • ACS Applied Nano Materials

Koblmüller's collaboration network includes several frequent co-authors, notably:

  • Jonathan J. Finley
  • Paul Schmiedeke
  • Markus Döblinger
  • Akhil Ajay
  • Hamidreza Esmaielpour

Best Publications

  • Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature

    Benedikt Mayer;Daniel Rudolph;Joscha Schnell;Stefanie Morkötter

  • In-polar InN grown by plasma-assisted molecular beam epitaxy

    Chad S. Gallinat;Gregor Koblmüller;Jay S. Brown;Sarah Bernardis

  • Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy

    S. Hertenberger;D. Rudolph;M. Bichler;J. J. Finley

  • A growth diagram for plasma-assisted molecular beam epitaxy of In-face InN

    C. S. Gallinat;G. Koblmüller;J. S. Brown;J. S. Speck

  • Monolithically Integrated High-β Nanowire Lasers on Silicon

    B. Mayer;L. Janker;B. Loitsch;J. Treu

  • Spontaneous Alloy Composition Ordering in GaAs-AlGaAs Core–Shell Nanowires

    Daniel Rudolph;Stefan Funk;Markus Döblinger;Stefanie Morkötter

  • Direct Observation of a Noncatalytic Growth Regime for GaAs Nanowires

    Daniel Rudolph;Simon Hertenberger;Stefanie Bolte;Stefanie Bolte;Watcharapong Paosangthong

  • Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxy.

    Koblmuller G;Hertenberger S;Vizbaras K;Bichler M

  • Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy

    G. Koblmüller;C. S. Gallinat;S. Bernardis;J. S. Speck

  • In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction

    S. Fernández-Garrido;G. Koblmüller;E. Calleja;J. S. Speck

  • Dislocation-induced thermal transport anisotropy in single-crystal group-III nitride films

    Bo Sun;Bo Sun;Georg Haunschild;Carlos Polanco;James Zi-Jian Ju

  • Thermal conductivity of GaAs nanowires studied by micro-Raman spectroscopy combined with laser heating

    Martin Soini;Ilaria Zardo;Emanuele Uccelli;Stefan Funk

  • In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001) GaN

    G. Koblmüller;S. Fernández-Garrido;E. Calleja;J. S. Speck

  • Surface kinetics and thermal instability of N-face InN grown by plasma-assisted molecular beam epitaxy

    G. Koblmüller;C. S. Gallinat;J. S. Speck

  • Direct observation of different equilibrium Ga adlayer coverages and their desorption kinetics on GaN (0001) and (0001̄) surfaces

    Gregor Koblmüller;Gregor Koblmüller;Robert Averbeck;Henning Riechert;Peter Pongratz

  • Growth and properties of InGaAs nanowires on silicon

    Gregor Koblmüller;Gerhard Abstreiter

  • Excitation wavelength dependence of terahertz emission from InN and InAs

    Grace D. Chern;Eric D. Readinger;Hongen Shen;Michael Wraback

  • Evaluation of threading dislocation densities in In- and N-face InN

    C. S. Gallinat;G. Koblmüller;Feng Wu;J. S. Speck

  • Enhanced Luminescence Properties of InAs–InAsP Core–Shell Nanowires

    Julian Treu;Michael Bormann;Hannes Schmeiduch;Markus Döblinger

  • Absence of vapor-liquid-solid growth during molecular beam epitaxy of self-induced InAs nanowires on Si

    S. Hertenberger;D. Rudolph;S. Bolte;M. Döblinger

  • High electron mobility GaN grown under N-rich conditions by plasma-assisted molecular beam epitaxy

    G. Koblmüller;F. Wu;T. Mates;J. S. Speck

Frequent Co-Authors

Jonathan J. Finley
Jonathan J. Finley Technical University of Munich
Gerhard Abstreiter
Gerhard Abstreiter Technical University of Munich
James S. Speck
James S. Speck University of California, Santa Barbara
Markus Döblinger
Markus Döblinger Ludwig-Maximilians-Universität München
Paolo Lugli
Paolo Lugli Free University of Bozen-Bolzano
Michael Wraback
Michael Wraback United States Army Research Laboratory
Henning Riechert
Henning Riechert Infineon Technologies (Germany)
Feng Wu
Feng Wu Huazhong University of Science and Technology
Lincoln J. Lauhon
Lincoln J. Lauhon Northwestern University
Martin Bichler
Martin Bichler Technical University of Munich

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