2014 - Stern–Gerlach Medal, German Physical Society
1998 - Max Born Medal and Prize, German Physical Society, Institute of Physics
1991 - Fellow of American Physical Society (APS) Citation For farinfrared and Raman scattering studies of twodimensional electron systems and of the physics of SiSixGe1x superlattices
Gerhard Abstreiter mainly focuses on Condensed matter physics, Optoelectronics, Quantum dot, Molecular beam epitaxy and Photoluminescence. His Condensed matter physics study incorporates themes from Quantum well, Fermi gas and Spinplasmonics. His Optoelectronics research integrates issues from Infrared and Detector.
His research integrates issues of Exciton, Atomic physics, Electron, Quantum tunnelling and Quantum dot laser in his study of Quantum dot. His Molecular beam epitaxy research incorporates themes from Nanowire, Silicon, Crystallography, Molecular physics and Transmission electron microscopy. His Photoluminescence research also works with subjects such as
The scientist’s investigation covers issues in Condensed matter physics, Optoelectronics, Quantum dot, Quantum well and Molecular beam epitaxy. His Condensed matter physics study integrates concerns from other disciplines, such as Electron and Raman scattering, Raman spectroscopy. His study in Photoluminescence, Nanowire, Heterojunction, Silicon and Doping is carried out as part of his Optoelectronics studies.
His Quantum dot research incorporates themes from Spectroscopy, Exciton, Quantum point contact, Atomic physics and Quantum dot laser. His Quantum well research is multidisciplinary, incorporating perspectives in Molecular physics, Infrared and Excited state. Gerhard Abstreiter has included themes like Crystallography, Transmission electron microscopy, Substrate and Analytical chemistry in his Molecular beam epitaxy study.
Gerhard Abstreiter mostly deals with Optoelectronics, Nanowire, Quantum dot, Condensed matter physics and Nanotechnology. His Optoelectronics research is multidisciplinary, relying on both Spectroscopy and Epitaxy. Gerhard Abstreiter interconnects Wurtzite crystal structure, Molecular beam epitaxy, Heterojunction, Semiconductor and Photoluminescence in the investigation of issues within Nanowire.
His studies deal with areas such as Exciton, Atomic physics, Electron, Quantum tunnelling and Quantum dot laser as well as Quantum dot. His Electron study incorporates themes from Quantum well, Molecular physics and Charge. As part of the same scientific family, Gerhard Abstreiter usually focuses on Condensed matter physics, concentrating on Quantum point contact and intersecting with Quantum spin Hall effect.
Gerhard Abstreiter spends much of his time researching Nanowire, Optoelectronics, Molecular beam epitaxy, Nanotechnology and Photoluminescence. His studies in Nanowire integrate themes in fields like Gallium arsenide, Epitaxy, Heterojunction, Semiconductor and Quantum dot. His study in Semiconductor is interdisciplinary in nature, drawing from both Reversible reaction, Quantum wire and Condensed matter physics.
His work carried out in the field of Condensed matter physics brings together such families of science as Wave function, Fermi gas and Wurtzite crystal structure. His Optoelectronics research includes elements of Thermoelectric effect and Laser. The study incorporates disciplines such as Nanolithography, Scanning transmission electron microscopy, Crystallography, Molecular physics and Gallium in addition to Molecular beam epitaxy.
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Optically programmable electron spin memory using semiconductor quantum dots
Miro Kroutvar;Yann Ducommun;Dominik Heiss;Max Bichler.
Coherent properties of a two-level system based on a quantum-dot photodiode
A. Zrenner;A. Zrenner;E. Beham;S. Stufler;S. Stufler;F. Findeis.
How many-particle interactions develop after ultrafast excitation of an electron–hole plasma
Rupert Huber;F. Tauser;A. Brodschelm;M. Bichler.
Strain-Induced Two-Dimensional Electron Gas in Selectively Doped Si / Si x Ge 1 − x Superlattices
G. Abstreiter;H. Brugger;T. Wolf;H. Jorke.
Physical Review Letters (1985)
Sharp-line photoluminescence and two-photon absorption of zero-dimensional biexcitons in a GaAs/AlGaAs structure.
K Brunner;G Abstreiter;G Böhm;G Tränkle.
Physical Review Letters (1994)
Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures
D. Spirkoska;J. Arbiol;Anders Gustafsson;S. Conesa-Boj.
Physical Review B (2009)
Direct observation of controlled coupling in an individual quantum dot molecule.
H. J. Krenner;M. Sabathil;E. C. Clark;A. Kress.
Physical Review Letters (2005)
Condensation of indirect excitons in coupled AlAs/GaAs quantum wells.
L. V. Butov;A. Zrenner;G. Abstreiter;G. Böhm.
Physical Review Letters (1994)
Photoluminescence from a single GaAs/AlGaAs quantum dot
K. Brunner;U. Bockelmann;G. Abstreiter;M. Walther.
quantum electronics and laser science conference (1993)
Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy
C. Colombo;D. Spirkoska;M. Frimmer;G. Abstreiter.
Physical Review B (2008)
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