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Physics

D-Index
94
Citations
34030
World Ranking
1978
National Ranking
175

Research.com Recognitions

  • 2014 - Stern–Gerlach Medal, German Physical Society
  • 1998 - Max Born Medal and Prize, German Physical Society, Institute of Physics
  • 1991 - Fellow of American Physical Society (APS) Citation For farinfrared and Raman scattering studies of twodimensional electron systems and of the physics of SiSixGe1x superlattices

Overview

Gerhard Abstreiter is affiliated with the Technical University of Munich in Germany. They have been recognized with several awards, including the Stern-Gerlach Medal from the German Physical Society in 2014 and the Max Born Medal and Prize awarded jointly by the German Physical Society and the Institute of Physics in 1998.

In 1991, Gerhard Abstreiter was named a Fellow of the American Physical Society (APS). The citation for this fellowship highlights their contributions to far-infrared and Raman scattering studies of two-dimensional electron systems and the physics of SiSixGe1-x superlattices.

Best Publications

  • Optically programmable electron spin memory using semiconductor quantum dots

    Miro Kroutvar;Yann Ducommun;Dominik Heiss;Max Bichler

  • Coherent properties of a two-level system based on a quantum-dot photodiode

    A. Zrenner;A. Zrenner;E. Beham;S. Stufler;S. Stufler;F. Findeis

  • How many-particle interactions develop after ultrafast excitation of an electron–hole plasma

    Rupert Huber;F. Tauser;A. Brodschelm;M. Bichler

  • Strain-Induced Two-Dimensional Electron Gas in Selectively Doped Si / Si x Ge 1 − x Superlattices

    G. Abstreiter;H. Brugger;T. Wolf;H. Jorke

  • Sharp-line photoluminescence and two-photon absorption of zero-dimensional biexcitons in a GaAs/AlGaAs structure.

    K Brunner;G Abstreiter;G Böhm;G Tränkle

  • Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures

    D. Spirkoska;J. Arbiol;Anders Gustafsson;S. Conesa-Boj

  • Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy

    C. Colombo;D. Spirkoska;M. Frimmer;G. Abstreiter

  • Condensation of indirect excitons in coupled AlAs/GaAs quantum wells.

    L. V. Butov;A. Zrenner;G. Abstreiter;G. Böhm

  • Direct observation of controlled coupling in an individual quantum dot molecule.

    H. J. Krenner;M. Sabathil;E. C. Clark;A. Kress

  • Photoluminescence from a single GaAs/AlGaAs quantum dot

    K. Brunner;U. Bockelmann;G. Abstreiter;M. Walther

  • Quantum dots formed by interface fluctuations in AlAs/GaAs coupled quantum well structures.

    A. Zrenner;L. V. Butov;M. Hagn;G. Abstreiter

  • Coupled Quantum Dots Fabricated by Cleaved Edge Overgrowth: From Artificial Atoms to Molecules

    Gert Schedelbeck;Werner Wegscheider;Max Bichler;Gerhard Abstreiter

  • Light scattering by free carrier excitations in semiconductors

    Gerhard Abstreiter;Manuel Cardona;Aron Pinczuk

  • Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires

    A. Fontcuberta i Morral;C. Colombo;G. Abstreiter;J. Arbiol

  • Intersubband relaxation in GaAs- Al x Ga 1 − x As quantum well structures observed directly by an infrared bleaching technique

    A. Seilmeier;H.-J. Hübner;G. Abstreiter;G. Weimann

  • Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: Polarization dependence, selection rules, and strain effects

    I. Zardo;S. Conesa-Boj;F. Peiro;J. R. Morante

  • Growth and characterization of self-assembled Ge-rich islands on Si

    G Abstreiter;P Schittenhelm;C Engel;E Silveira

  • Determination of existing stress in silicon films on sapphire substrate using Raman spectroscopy

    Th. Englert;G. Abstreiter;J. Pontcharra

  • Raman spectroscopy—A versatile tool for characterization of thin films and heterostructures of GaAs and AlxGa1−xAs

    G. Abstreiter;E. Bauser;A. Fischer;K. Ploog

  • Lasing from individual GaAs-AlGaAs core-shell nanowires up to room temperature

    Benedikt Mayer;Daniel Rudolph;Joscha Schnell;Stefanie Morkötter

Frequent Co-Authors

Jonathan J. Finley
Jonathan J. Finley Technical University of Munich
Werner Wegscheider
Werner Wegscheider Solid State Physics Laboratory
G. Böhm
G. Böhm Technical University of Munich
Gregor Koblmüller
Gregor Koblmüller Technical University of Munich
Martin Bichler
Martin Bichler Technical University of Munich
Karl Eberl
Karl Eberl Dr. Eberl MBE-Komponenten GmbH
Markus Döblinger
Markus Döblinger Ludwig-Maximilians-Universität München
G. Bauer
G. Bauer Johannes Kepler University of Linz
Friedrich Schäffler
Friedrich Schäffler Johannes Kepler University of Linz
Anna Fontcuberta i Morral
Anna Fontcuberta i Morral École Polytechnique Fédérale de Lausanne

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