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Materials Science

D-Index
61
Citations
18235
World Ranking
6663
National Ranking
1683

Gregory J. Salamo publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Gregory J. Salamo sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 662 publications — 94th percentile

94% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Gregory J. Salamo D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Gregory J. Salamo sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 61 D-Index — 48th percentile

48% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Gregory J. Salamo is affiliated with the University of Arkansas at Fayetteville in the United States. Their research spans multiple areas within engineering and physics, with a significant focus on electrical and electronic engineering as well as atomic and molecular physics and optics. Their body of work includes contributions to biomedical engineering, materials chemistry, and condensed matter physics.

Their research activity is closely associated with semiconductor and photonic technologies. Main topics of their work include:

  • Semiconductor Quantum Structures and Devices
  • Photonic and Optical Devices
  • Semiconductor Lasers and Optical Devices
  • Nanowire Synthesis and Applications
  • Advanced Semiconductor Detectors and Materials
  • Advanced Photonic Communication Systems
  • GaN-based semiconductor devices and materials

Notable recent publications by Gregory J. Salamo cover developments in semiconductor laser technology and material growth techniques. These include:

  • Electrically injected GeSn lasers on Si operating up to 100 K (2020), published in Optica
  • Electrically injected GeSn lasers with peak wavelength up to 2.7 μm (2021), published in Photonics Research
  • Strain suppressed Sn incorporation in GeSn epitaxially grown on Ge/Si(001) substrate (2020), published in Applied Physics Letters
  • Photoluminescence of InAs/GaAs quantum dots under direct two-photon excitation (2020), published in Scientific Reports
  • Quantitative Correlation Study of Dislocation Generation, Strain Relief, and Sn Outdiffusion in Thermally Annealed GeSn Epilayers (2021), published in Crystal Growth & Design

Their frequent collaborators include Yuriy I. Mazur, Shui-Qing Yu, Hryhorii Stanchu, Fernando Maia de Oliveira, and Andrian Kuchuk, reflecting a consistent network of research partnerships across their studies.

Gregory J. Salamo has published extensively in several scientific venues, including:

  • arXiv (Cornell University)
  • Applied Physics Letters
  • Crystal Growth & Design
  • Applied Surface Science
  • Crystals

Best Publications

  • Observation of PT-Symmetry Breaking in Complex Optical Potentials

    A. Guo;G. J. Salamo;D. Duchesne;R. Morandotti

  • Observation of self-trapping of an optical beam due to the photorefractive effect.

    Galen C. Duree;John L. Shultz;Gregory J. Salamo;Mordechai Segev

  • Resonance fluorescence from a coherently driven semiconductor quantum dot in a cavity.

    A. Muller;E. B. Flagg;P. Bianucci;X. Y. Wang

  • Observation of two-dimensional steady-state photorefractive screening solitons

    M.-F. Shih;M. Segev;G.C. Valley;G. Salamo

  • Nonlinear refraction and absorption: mechanisms and magnitudes

    Demetrios N. Christodoulides;Iam Choon Khoo;Gregory J. Salamo;George I. Stegeman

  • Nanoholes fabricated by self-assembled gallium nanodrill on GaAs(100)

    Zh. M. Wang;B. L. Liang;K. A. Sablon;G. J. Salamo

  • Waveguides formed by quasi-steady-state photorefractive spatial solitons

    Matthew Morin;Galen Duree;Gregory Salamo;Mordechai Segev

  • Self-trapping of optical beams in photorefractive media

    Bruno Crosignani;Mordechai Segev;Doruk Engin;Paolo di Porto

  • Electrically injected GeSn lasers on Si operating up to 100 K

    Yiyin Zhou;Yuanhao Miao;Solomon Ojo;Huong Tran

  • Light-Harvesting Using High Density p-type Single Wall Carbon Nanotube/n-type Silicon Heterojunctions

    Zhongrui Li;Vasyl P. Kunets;Viney Saini;Yang Xu

  • Fabrication of (In,Ga)As quantum-dot chains on GaAs(100)

    Z. M. Wang;K. Holmes;Yu. I. Mazur;G. J. Salamo

  • Laser Ablated Carbon Nanodots for Light Emission

    Delfino Reyes;Delfino Reyes;Marco Camacho;Miguel Camacho;Miguel Mayorga

  • InGaAs quantum dot molecules around self-assembled GaAs nanomound templates

    J. H. Lee;Zh. M. Wang;N. W. Strom;Yu. I. Mazur

  • Spatially resolved spin-injection probability for gallium arsenide.

    V. P. LaBella;D. W. Bullock;Z. Ding;C. Emery

  • 1.3-μm InAs/GaAs quantum-dot lasers monolithically grown on Si substrates using InAlAs/GaAs dislocation filter layers

    Mingchu Tang;Siming Chen;Jiang Wu;Qi Jiang

  • Polarization induced pn-junction without dopant in graded AlGaN coherently strained on GaN

    Shibin Li;Morgan Ware;Jiang Wu;Paul Minor

  • Electric-field-induced domain evolution in ferroelectric ultrathin films.

    Bo-Kuai Lai;I. Ponomareva;I. I. Naumov;I. Kornev

  • Uniform Thickness and Colloidal-Stable CdS Quantum Disks with Tunable Thickness: Synthesis and Properties

    Zheng Li;Haiyan Qin;Dorel Guzun;Mourad Benamara

  • Controlling Planar and Vertical Ordering in Three-Dimensional (In,Ga)As Quantum Dot Lattices by GaAs Surface Orientation

    M. Schmidbauer;Sh. Seydmohamadi;D. Grigoriev;Zh. M. Wang

  • Comparative Study on Different Carbon Nanotube Materials in Terms of Transparent Conductive Coatings

    Zhongrui Li;Horn R. Kandel;Enkeleda Dervishi;Viney Saini

Frequent Co-Authors

Zhiming Wang
Zhiming Wang University of Electronic Science and Technology of China
Jiang Wu
Jiang Wu University of Electronic Science and Technology of China
Shui-Qing Yu
Shui-Qing Yu University of Arkansas at Fayetteville
Mordechai Segev
Mordechai Segev Technion – Israel Institute of Technology
Min Xiao
Min Xiao University of Arkansas at Fayetteville
Huiyun Liu
Huiyun Liu University College London
Alexander Belyaev
Alexander Belyaev University of Southampton
Roberto Morandotti
Roberto Morandotti Institut National de la Recherche Scientifique
Diana L. Huffaker
Diana L. Huffaker The University of Texas at Arlington
Alexandru S. Biris
Alexandru S. Biris University of Arkansas at Little Rock

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