World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
62
Citations
14209
World Ranking
1452
National Ranking
599

Materials Science

D-Index
62
Citations
14338
World Ranking
6454
National Ranking
1639

Diana L. Huffaker publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Diana L. Huffaker sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 472 publications — 82nd percentile

82% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Diana L. Huffaker D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Diana L. Huffaker sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 62 D-Index — 80th percentile

80% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Diana L. Huffaker is affiliated with The University of Texas at Arlington in the United States. Their research spans several fields, with a primary focus on engineering and physics and astronomy. The subfields in which they have published include atomic and molecular physics, and optics; electrical and electronic engineering; biomedical engineering; materials chemistry; and instrumentation.

The main topics covered in their work are diverse, reflecting an intersection of materials science and photonics. These topics include semiconductor quantum structures and devices, photonic and optical devices, advanced semiconductor detectors and materials, advanced optical sensing technologies, topological materials and phenomena, photonic crystals and applications, and semiconductor materials and devices.

Frequent coauthors in Huffaker's publications include Shiyu Xie, Baolai Liang, Hyunseok Kim, Yongkang Gong, and Sang Soon Oh. These collaborations indicate a research network spanning multiple experts in related areas.

The venues where Huffaker's research has been published reveal an engagement with high-impact journals and proceedings. Notable frequent publication venues include ACS Photonics, Advanced Functional Materials, Applied Physics Letters, Scientific Reports, and arXiv (Cornell University).

Some of the recent papers authored or coauthored by Huffaker are as follows:

  • Topological Insulator Laser Using Valley-Hall Photonic Crystals, 2020, ACS Photonics
  • Emerging Type-II Superlattices of InAs/InAsSb and InAs/GaSb for Mid-Wavelength Infrared Photodetectors, 2021, Advanced Photonics Research
  • Room-Temperature Quantum Emitter in Aluminum Nitride, 2020, ACS Photonics
  • Enhanced Optical Emission from 2D InSe Bent onto Si-Pillars, 2020, Advanced Optical Materials
  • Integrated and spectrally selective thermal emitters enabled by layered metamaterials, 2021, Nanophotonics

Best Publications

  • 1.3 μm room-temperature GaAs-based quantum-dot laser

    D. L. Huffaker;G. Park;Z. Zou;O. B. Shchekin

  • Native-Oxide Defined Ring Contact for Low Threshold Vertical-Cavity Lasers

    D. L. Huffaker;D. G. Deppe;K. Kumar;T. J. Rogers

  • Low-threshold oxide-confined 1.3-μm quantum-dot laser

    Gyoungwon Park;O.B. Shchekin;D.L. Huffaker;D.G. Deppe

  • Strain relief by periodic misfit arrays for low defect density GaSb on GaAs

    S. H. Huang;G. Balakrishnan;A. Khoshakhlagh;A. Jallipalli

  • GaAs nanopillar-array solar cells employing in situ surface passivation.

    Giacomo Mariani;Adam C. Scofield;Chung-Hong Hung;Diana L. Huffaker

  • GaSb∕GaAs type II quantum dot solar cells for enhanced infrared spectral response

    R. B. Laghumavarapu;A. Moscho;A. Khoshakhlagh;M. El-Emawy

  • Improved device performance of InAs∕GaAs quantum dot solar cells with GaP strain compensation layers

    R. B. Laghumavarapu;M. El-Emawy;N. Nuntawong;A. Moscho

  • Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots

    D. L. Huffaker;D. G. Deppe

  • Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser

    Gyoungwon Park;Oleg B. Shchekin;Sebastion Csutak;Diana L. Huffaker

  • Topological Insulator Laser Using Valley-Hall Photonic Crystals

    Yongkang Gong;Stephan Wong;Anthony J. Bennett;Diana L. Huffaker

  • Patterned radial GaAs nanopillar solar cells.

    Giacomo Mariani;Ping-Show Wong;Aaron M. Katzenmeyer;Francois Léonard

  • Low threshold half-wave vertical-cavity lasers

    D.L. Huffaker;Jeyong Shin;Dennis G. Deppe

  • Spontaneous Emission from Planar Microstructures

    D.G. Deppe;C. Lei;C.C. Lin;D.L. Huffaker

  • Discrete energy level separation and the threshold temperature dependence of quantum dot lasers

    Oleg B. Shchekin;Gyoungwon Park;Diana L. Huffaker;Dennis G. Deppe

  • Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers

    G. Park;D.L. Huffaker;Z. Zou;O.B. Shchekin

  • Sub-40 μA continuous-wave lasing in an oxidized vertical-cavity surface-emitting laser with dielectric mirrors

    D.L. Huffaker;L.A. Graham;H. Deng;D.G. Deppe

  • Bottom-up Photonic Crystal Lasers

    Adam C. Scofield;Se-Heon Kim;Joshua N. Shapiro;Andrew Lin

  • Surface plasmon-enhanced nanopillar photodetectors.

    Pradeep Senanayake;Chung-Hong Hung;Joshua Shapiro;Andrew Lin

  • Interfacial misfit array formation for GaSb growth on GaAs

    Shenghong Huang;Ganesh Balakrishnan;Diana L. Huffaker

  • Quantum dot vertical-cavity surface-emitting laser with a dielectric aperture

    D. L. Huffaker;O. Baklenov;L. A. Graham;B. G. Streetman

  • InGaAs/GaAs quantum dot lasers

    D.L. Huffaker;G. Park;O. Shchekin;Z.Z. Zhou

Frequent Co-Authors

Dennis G. Deppe
Dennis G. Deppe University of Central Florida
Guillaume Huyet
Guillaume Huyet Université Côte d'Azur
Gregory J. Salamo
Gregory J. Salamo University of Arkansas at Fayetteville
Luke F. Lester
Luke F. Lester Virginia Tech
Steven R. J. Brueck
Steven R. J. Brueck University of New Mexico
Yu-Hwa Lo
Yu-Hwa Lo University of California, San Diego
Axel Scherer
Axel Scherer California Institute of Technology
Weidong Zhou
Weidong Zhou The University of Texas at Arlington
Sanjay K. Banerjee
Sanjay K. Banerjee The University of Texas at Austin
Huifang Xu
Huifang Xu University of Wisconsin–Madison

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