The scientist’s investigation covers issues in Optoelectronics, Quantum dot, Laser, Gallium arsenide and Quantum dot laser. Her work deals with themes such as Nanopillar and Optics, which intersect with Optoelectronics. Her Quantum dot research is multidisciplinary, relying on both Spontaneous emission, Molecular beam epitaxy, Condensed matter physics, Quantum dot solar cell and Photoluminescence.
Her studies examine the connections between Gallium arsenide and genetics, as well as such issues in Electroluminescence, with regards to Blueshift. Her research integrates issues of Current density and Quantum efficiency in her study of Quantum dot laser. Her Semiconductor laser theory research is multidisciplinary, incorporating perspectives in Quantum well and Stimulated emission.
Diana L. Huffaker spends much of her time researching Optoelectronics, Quantum dot, Gallium arsenide, Photoluminescence and Laser. Her Optoelectronics study combines topics from a wide range of disciplines, such as Quantum well and Optics. Within one scientific family, Diana L. Huffaker focuses on topics pertaining to Nanopillar under Optics, and may sometimes address concerns connected to Heterojunction.
She combines subjects such as Spontaneous emission, Electroluminescence, Condensed matter physics, Ground state and Quantum dot laser with her study of Quantum dot. The study incorporates disciplines such as Diode, Light-emitting diode and Semiconductor in addition to Gallium arsenide. The Photoluminescence study combines topics in areas such as Chemical vapor deposition, Molecular beam epitaxy, Epitaxy, Carrier lifetime and Substrate.
Her primary areas of investigation include Optoelectronics, Nanowire, Silicon, Photonic crystal and Avalanche photodiode. Diana L. Huffaker interconnects Passivation, Infrared and Epitaxy in the investigation of issues within Optoelectronics. Her studies in Nanowire integrate themes in fields like Substrate, Plasmon and Gallium arsenide.
Her research investigates the link between Gallium arsenide and topics such as Scanning transmission electron microscopy that cross with problems in Heterojunction. She has included themes like Photonics, Silicon photonics and Lasing threshold in her Photonic crystal study. Her Avalanche photodiode research is multidisciplinary, incorporating elements of Diode, Absorption, Electric field, Jitter and Noise.
Her scientific interests lie mostly in Optoelectronics, Nanowire, Photodetector, Silicon and Photonics. Her research combines Avalanche photodiode and Optoelectronics. Her work focuses on many connections between Nanowire and other disciplines, such as Passivation, that overlap with her field of interest in Plasmon, Quantum efficiency, Substrate, Photoluminescence and Lasing threshold.
The various areas that she examines in her Silicon study include Dipole, Indium and Anisotropy. Her biological study spans a wide range of topics, including Semiconductor, Photonic crystal, van der Waals force, Laser and Electronic band structure. Diana L. Huffaker has researched Laser in several fields, including Topological insulator, Telecommunications and Edge states.
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1.3 μm room-temperature GaAs-based quantum-dot laser
D. L. Huffaker;G. Park;Z. Zou;O. B. Shchekin.
Applied Physics Letters (1998)
1.3 μm room-temperature GaAs-based quantum-dot laser
D. L. Huffaker;G. Park;Z. Zou;O. B. Shchekin.
Applied Physics Letters (1998)
Native-Oxide Defined Ring Contact for Low Threshold Vertical-Cavity Lasers
D. L. Huffaker;D. G. Deppe;K. Kumar;T. J. Rogers.
Applied Physics Letters (1994)
Native-Oxide Defined Ring Contact for Low Threshold Vertical-Cavity Lasers
D. L. Huffaker;D. G. Deppe;K. Kumar;T. J. Rogers.
Applied Physics Letters (1994)
Low-threshold oxide-confined 1.3-μm quantum-dot laser
Gyoungwon Park;O.B. Shchekin;D.L. Huffaker;D.G. Deppe.
IEEE Photonics Technology Letters (2000)
Low-threshold oxide-confined 1.3-μm quantum-dot laser
Gyoungwon Park;O.B. Shchekin;D.L. Huffaker;D.G. Deppe.
IEEE Photonics Technology Letters (2000)
Strain relief by periodic misfit arrays for low defect density GaSb on GaAs
S. H. Huang;G. Balakrishnan;A. Khoshakhlagh;A. Jallipalli.
Applied Physics Letters (2006)
Strain relief by periodic misfit arrays for low defect density GaSb on GaAs
S. H. Huang;G. Balakrishnan;A. Khoshakhlagh;A. Jallipalli.
Applied Physics Letters (2006)
GaAs nanopillar-array solar cells employing in situ surface passivation.
Giacomo Mariani;Adam C. Scofield;Chung-Hong Hung;Diana L. Huffaker.
Nature Communications (2013)
GaAs nanopillar-array solar cells employing in situ surface passivation.
Giacomo Mariani;Adam C. Scofield;Chung-Hong Hung;Diana L. Huffaker.
Nature Communications (2013)
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Publications: 47
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