World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
62
Citations
14209
World Ranking
1452
National Ranking
598

Materials Science

D-Index
62
Citations
14338
World Ranking
6456
National Ranking
1641

Overview

Diana L. Huffaker is affiliated with The University of Texas at Arlington in the United States. Their research spans several fields, with a primary focus on engineering and physics and astronomy. The subfields in which they have published include atomic and molecular physics, and optics; electrical and electronic engineering; biomedical engineering; materials chemistry; and instrumentation.

The main topics covered in their work are diverse, reflecting an intersection of materials science and photonics. These topics include semiconductor quantum structures and devices, photonic and optical devices, advanced semiconductor detectors and materials, advanced optical sensing technologies, topological materials and phenomena, photonic crystals and applications, and semiconductor materials and devices.

Frequent coauthors in Huffaker's publications include Shiyu Xie, Baolai Liang, Hyunseok Kim, Yongkang Gong, and Sang Soon Oh. These collaborations indicate a research network spanning multiple experts in related areas.

The venues where Huffaker's research has been published reveal an engagement with high-impact journals and proceedings. Notable frequent publication venues include ACS Photonics, Advanced Functional Materials, Applied Physics Letters, Scientific Reports, and arXiv (Cornell University).

Some of the recent papers authored or coauthored by Huffaker are as follows:

  • Topological Insulator Laser Using Valley-Hall Photonic Crystals, 2020, ACS Photonics
  • Emerging Type-II Superlattices of InAs/InAsSb and InAs/GaSb for Mid-Wavelength Infrared Photodetectors, 2021, Advanced Photonics Research
  • Room-Temperature Quantum Emitter in Aluminum Nitride, 2020, ACS Photonics
  • Enhanced Optical Emission from 2D InSe Bent onto Si-Pillars, 2020, Advanced Optical Materials
  • Integrated and spectrally selective thermal emitters enabled by layered metamaterials, 2021, Nanophotonics

Best Publications

  • 1.3 μm room-temperature GaAs-based quantum-dot laser

    D. L. Huffaker;G. Park;Z. Zou;O. B. Shchekin

  • Native-Oxide Defined Ring Contact for Low Threshold Vertical-Cavity Lasers

    D. L. Huffaker;D. G. Deppe;K. Kumar;T. J. Rogers

  • Low-threshold oxide-confined 1.3-μm quantum-dot laser

    Gyoungwon Park;O.B. Shchekin;D.L. Huffaker;D.G. Deppe

  • Strain relief by periodic misfit arrays for low defect density GaSb on GaAs

    S. H. Huang;G. Balakrishnan;A. Khoshakhlagh;A. Jallipalli

  • GaAs nanopillar-array solar cells employing in situ surface passivation.

    Giacomo Mariani;Adam C. Scofield;Chung-Hong Hung;Diana L. Huffaker

  • GaSb∕GaAs type II quantum dot solar cells for enhanced infrared spectral response

    R. B. Laghumavarapu;A. Moscho;A. Khoshakhlagh;M. El-Emawy

  • Improved device performance of InAs∕GaAs quantum dot solar cells with GaP strain compensation layers

    R. B. Laghumavarapu;M. El-Emawy;N. Nuntawong;A. Moscho

  • Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots

    D. L. Huffaker;D. G. Deppe

  • Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser

    Gyoungwon Park;Oleg B. Shchekin;Sebastion Csutak;Diana L. Huffaker

  • Topological Insulator Laser Using Valley-Hall Photonic Crystals

    Yongkang Gong;Stephan Wong;Anthony J. Bennett;Diana L. Huffaker

  • Patterned radial GaAs nanopillar solar cells.

    Giacomo Mariani;Ping-Show Wong;Aaron M. Katzenmeyer;Francois Léonard

  • Low threshold half-wave vertical-cavity lasers

    D.L. Huffaker;Jeyong Shin;Dennis G. Deppe

  • Spontaneous Emission from Planar Microstructures

    D.G. Deppe;C. Lei;C.C. Lin;D.L. Huffaker

  • Discrete energy level separation and the threshold temperature dependence of quantum dot lasers

    Oleg B. Shchekin;Gyoungwon Park;Diana L. Huffaker;Dennis G. Deppe

  • Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers

    G. Park;D.L. Huffaker;Z. Zou;O.B. Shchekin

  • Sub-40 μA continuous-wave lasing in an oxidized vertical-cavity surface-emitting laser with dielectric mirrors

    D.L. Huffaker;L.A. Graham;H. Deng;D.G. Deppe

  • Bottom-up Photonic Crystal Lasers

    Adam C. Scofield;Se-Heon Kim;Joshua N. Shapiro;Andrew Lin

  • Surface plasmon-enhanced nanopillar photodetectors.

    Pradeep Senanayake;Chung-Hong Hung;Joshua Shapiro;Andrew Lin

  • Interfacial misfit array formation for GaSb growth on GaAs

    Shenghong Huang;Ganesh Balakrishnan;Diana L. Huffaker

  • Quantum dot vertical-cavity surface-emitting laser with a dielectric aperture

    D. L. Huffaker;O. Baklenov;L. A. Graham;B. G. Streetman

  • InGaAs/GaAs quantum dot lasers

    D.L. Huffaker;G. Park;O. Shchekin;Z.Z. Zhou

Frequent Co-Authors

Dennis G. Deppe
Dennis G. Deppe University of Central Florida
Guillaume Huyet
Guillaume Huyet Université Côte d'Azur
Gregory J. Salamo
Gregory J. Salamo University of Arkansas at Fayetteville
Luke F. Lester
Luke F. Lester Virginia Tech
Steven R. J. Brueck
Steven R. J. Brueck University of New Mexico
Yu-Hwa Lo
Yu-Hwa Lo University of California, San Diego
Axel Scherer
Axel Scherer California Institute of Technology
Weidong Zhou
Weidong Zhou The University of Texas at Arlington
Sanjay K. Banerjee
Sanjay K. Banerjee The University of Texas at Austin
Huifang Xu
Huifang Xu University of Wisconsin–Madison

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