The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Johann Peter Reithmaier sits on this spectrum.
This scientist: 544 publications — 87th percentile
87% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 1,065 publications or more.
The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Johann Peter Reithmaier sits on this spectrum.
This scientist: 52 D-Index — 64th percentile
64% of scientists in this discipline score the same or lower.
The last bar groups every scientist with 111 D-Index or more.
Johann Peter Reithmaier is affiliated with the University of Kassel in Germany, where their research spans multiple intersecting areas in science and engineering. Their work primarily focuses on materials science, engineering, and physics and astronomy, with significant contributions in related subfields including materials chemistry, electrical and electronic engineering, atomic and molecular physics and optics, artificial intelligence, and biomedical engineering.
The researcher's expertise covers a range of topics centered on semiconductor quantum structures and devices, semiconductor lasers and optical devices, crystallization and solubility studies, X-ray diffraction in crystallography, photonic and optical devices, diamond and carbon-based materials research, and quantum and electron transport phenomena.
Their recent publications highlight a concentration on quantum photonics and advanced materials for optoelectronic applications. Notable papers include:
Johann Peter Reithmaier frequently collaborates with other researchers. Their most common co-authors are Mohamed Benyoucef, Ingo Koehne, Miriam Gerstel, Rudolf Pietschnig, and Clemens Bruhn.
Signature venues for their academic output include The Cambridge Structural Database, where they have published extensively, arXiv (Cornell University), Applied Physics Letters, Optics Express, and Materials.
Their professional recognition includes being named an IEEE Fellow in 2011 for contributions to research in active semiconductor nanostructures.
J. P. Reithmaier;G. Sęk;G. Sęk;A. Löffler;C. Hofmann
M. Bayer;A. Kuther;A. Forchel;A. Gorbunov
M. Bayer;T. Gutbrod;J. P. Reithmaier;A. Forchel
R. Schwertberger;D. Gold;J.P. Reithmaier;A. Forchel
G. Ortner;G. Ortner;M. Bayer;M. Bayer;Y. Lyanda-Geller;T. L. Reinecke
Ch. Schuller;F. Klopf;J. P. Reithmaier;M. Kamp
J. P. Reithmaier;M. Röhner;H. Zull;F. Schäfer
J P Reithmaier;A Somers;S Deubert;R Schwertberger
T. Gutbrod;M. Bayer;A. Forchel;J. P. Reithmaier
M. Benyoucef;M. Yacob;J. P. Reithmaier;J. Kettler
T. D. Happ;I. I. Tartakovskii;V. D. Kulakovskii;J.-P. Reithmaier
Claire Kammerer;C. Voisin;Guillaume Cassabois;C. Delalande
S. Reitzenstein;A. Bazhenov;A. Gorbunov;C. Hofmann
J.‐P. Reithmaier;R. Höger;H. Riechert;A. Heberle
A. Sauerwald;T. Kümmell;G. Bacher;A. Somers
H. Dery;E. Benisty;A. Epstein;R. Alizon
M. Bayer;T. Gutbrod;A. Forchel;T. L. Reinecke
Saulius Marcinkevicius;A. Gushterov;J. P. Reithmaier
A. Löffler;J. P. Reithmaier;G. Sęk;C. Hofmann
F. Klopf;J. P. Reithmaier;A. Forchel
F. Klopf;S. Deubert;J. P. Reithmaier;A. Forchel
S. Reitzenstein;G. Sęk;G. Sęk;A. Löffler;C. Hofmann
J.P. Reithmaier;A. Forchel
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