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Johann Peter Reithmaier

Johann Peter Reithmaier

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
52
Citations
12825
World Ranking
2497
National Ranking
73

Research.com Recognitions

  • 2011 - IEEE Fellow For research in active semiconductor nanostructures

Overview

Johann Peter Reithmaier is affiliated with the University of Kassel in Germany, where their research spans multiple intersecting areas in science and engineering. Their work primarily focuses on materials science, engineering, and physics and astronomy, with significant contributions in related subfields including materials chemistry, electrical and electronic engineering, atomic and molecular physics and optics, artificial intelligence, and biomedical engineering.

The researcher's expertise covers a range of topics centered on semiconductor quantum structures and devices, semiconductor lasers and optical devices, crystallization and solubility studies, X-ray diffraction in crystallography, photonic and optical devices, diamond and carbon-based materials research, and quantum and electron transport phenomena.

Their recent publications highlight a concentration on quantum photonics and advanced materials for optoelectronic applications. Notable papers include:

  • "InP-based single-photon sources operating at telecom C-band with increased extraction efficiency" (2021, Applied Physics Letters)
  • "Novel Ultra Localized and Dense Nitrogen Delta-Doping in Diamond for Advanced Quantum Sensing" (2020, Nano Letters)
  • "Optical and Spin Properties of NV Center Ensembles in Diamond Nano-Pillars" (2022, Nanomaterials)
  • "Fabrication and Characterization of Single-Crystal Diamond Membranes for Quantum Photonics with Tunable Microcavities" (2020, Micromachines)
  • "1.5-µm Indium Phosphide-Based Quantum Dot Lasers and Optical Amplifiers: The Impact of Atom-Like Optical Gain Material for Optoelectronics Devices" (2021, IEEE Nanotechnology Magazine)

Johann Peter Reithmaier frequently collaborates with other researchers. Their most common co-authors are Mohamed Benyoucef, Ingo Koehne, Miriam Gerstel, Rudolf Pietschnig, and Clemens Bruhn.

Signature venues for their academic output include The Cambridge Structural Database, where they have published extensively, arXiv (Cornell University), Applied Physics Letters, Optics Express, and Materials.

Their professional recognition includes being named an IEEE Fellow in 2011 for contributions to research in active semiconductor nanostructures.

Best Publications

  • Strong coupling in a single quantum dot–semiconductor microcavity system

    J. P. Reithmaier;G. Sęk;G. Sęk;A. Löffler;C. Hofmann

  • Electron and Hole g Factors and Exchange Interaction from Studies of the Exciton Fine Structure in In 0.60 Ga 0.40 As Quantum Dots

    M. Bayer;A. Kuther;A. Forchel;A. Gorbunov

  • Optical Modes in Photonic Molecules

    M. Bayer;T. Gutbrod;J. P. Reithmaier;A. Forchel

  • Long-wavelength InP-based quantum-dash lasers

    R. Schwertberger;D. Gold;J.P. Reithmaier;A. Forchel

  • Control of vertically coupled InGaAs/GaAs quantum dots with electric fields

    G. Ortner;G. Ortner;M. Bayer;M. Bayer;Y. Lyanda-Geller;T. L. Reinecke

  • Tunable photonic crystals fabricated in III-V semiconductor slab waveguides using infiltrated liquid crystals

    Ch. Schuller;F. Klopf;J. P. Reithmaier;M. Kamp

  • Size Dependence of Confined Optical Modes in Photonic Quantum Dots

    J. P. Reithmaier;M. Röhner;H. Zull;F. Schäfer

  • InP based lasers and optical amplifiers with wire-/dot-like active regions

    J P Reithmaier;A Somers;S Deubert;R Schwertberger

  • Weak and strong coupling of photons and excitons in photonic dots

    T. Gutbrod;M. Bayer;A. Forchel;J. P. Reithmaier

  • Telecom-wavelength (1.5 μm) single-photon emission from InP-based quantum dots

    M. Benyoucef;M. Yacob;J. P. Reithmaier;J. Kettler

  • Enhanced light emission of In x Ga 1 − x As quantum dots in a two-dimensional photonic-crystal defect microcavity

    T. D. Happ;I. I. Tartakovskii;V. D. Kulakovskii;J.-P. Reithmaier

  • Line narrowing in single semiconductor quantum dots: Toward the control of environment effects

    Claire Kammerer;C. Voisin;Guillaume Cassabois;C. Delalande

  • Lasing in high-Q quantum-dot micropillar cavities

    S. Reitzenstein;A. Bazhenov;A. Gorbunov;C. Hofmann

  • Band offset in elastically strained InGaAs/GaAs multiple quantum wells determined by optical absorption and electronic Raman scattering

    J.‐P. Reithmaier;R. Höger;H. Riechert;A. Heberle

  • Size control of InAs quantum dashes

    A. Sauerwald;T. Kümmell;G. Bacher;A. Somers

  • On the nature of quantum dash structures

    H. Dery;E. Benisty;A. Epstein;R. Alizon

  • Optical Demonstration of a Crystal Band Structure Formation

    M. Bayer;T. Gutbrod;A. Forchel;T. L. Reinecke

  • Transient electromagnetically induced transparency in self-assembled quantum dots

    Saulius Marcinkevicius;A. Gushterov;J. P. Reithmaier

  • Semiconductor quantum dot microcavity pillars with high-quality factors and enlarged dot dimensions

    A. Löffler;J. P. Reithmaier;G. Sęk;C. Hofmann

  • Highly efficient GaInAs/(Al)GaAs quantum-dot lasers based on a single active layer versus 980 nm high-power quantum-well lasers

    F. Klopf;J. P. Reithmaier;A. Forchel

  • Correlation between the gain profile and the temperature-induced shift in wavelength of quantum-dot lasers

    F. Klopf;S. Deubert;J. P. Reithmaier;A. Forchel

  • Strong coupling in a single quantum dot semiconductor microcavity system

    S. Reitzenstein;G. Sęk;G. Sęk;A. Löffler;C. Hofmann

  • Semiconductor quantum dots

    J.P. Reithmaier;A. Forchel

Frequent Co-Authors

Alfred Forchel
Alfred Forchel University of Würzburg
Gadi Eisenstein
Gadi Eisenstein Technion – Israel Institute of Technology
Jesper Mørk
Jesper Mørk Technical University of Denmark
François Rossi
François Rossi University of Pavia
Kresten Yvind
Kresten Yvind Technical University of Denmark
Zoran Ikonic
Zoran Ikonic University of Leeds
Andreas Rosenauer
Andreas Rosenauer University of Bremen
Ion N. Mihailescu
Ion N. Mihailescu National Institute for Laser Plasma and Radiation Physics

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