Mark Hopkinson

Best Publications

• Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots

  P W Fry;I E Itskevich;I E Itskevich;D J Mowbray;M S Skolnick

  727
  Citations

• Improved performance of 1.3 μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer

  H. Y. Liu;I. R. Sellers;T. J. Badcock;D. J. Mowbray

  383
  Citations

• Nature of the Stranski-Krastanow transition during epitaxy of InGaAs on GaAs.

  T. Walther;A. G. Cullis;D. J. Norris;M. Hopkinson

  345
  Citations

• Electronic energy levels and energy relaxation mechanisms in self-organized InAs/GaAs quantum dots.

  M. J. Steer;D. J. Mowbray;W. R. Tribe;M. S. Skolnick

  235
  Citations

• Optimizing the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure

  H. Y. Liu;M. Hopkinson;C. N. Harrison;M. J. Steer

  227
  Citations

• Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers

  L. Harris;D. J. Mowbray;M. S. Skolnick;M. Hopkinson

  196
  Citations

• Nuclear Spin Switch in Semiconductor Quantum Dots

  A. I. Tartakovskii;T. Wright;A. Russell;V. I. Falko

  196
  Citations

• Fast optical preparation, control, and readout of a single quantum dot spin.

  A. J. Ramsay;S. J. Boyle;R. S. Kolodka;José Brás Barreto de Oliveira;José Brás Barreto de Oliveira

  186
  Citations

• Experimental investigation of the effect of wetting-layer states on the gain–current characteristic of quantum-dot lasers

  Daniel Richard Matthews;Huw David Summers;Peter Michael Smowton;M. Hopkinson

  183
  Citations

• High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents

  H.Y. Liu;D.T. Childs;T.J. Badcock;K.M. Groom

  171
  Citations

• Mode structure of the L3 photonic crystal cavity

  A. R. A. Chalcraft;S. Lam;D. O'Brien;T. F. Krauss

  166
  Citations

• Long-wavelength light emission and lasing from InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer

  H. Y. Liu;M. J. Steer;T. J. Badcock;D. J. Mowbray

  163
  Citations

• Stranski-Krastanow transition and epitaxial island growth

  A. G. Cullis;D. J. Norris;T. Walther;M. A. Migliorato

  160
  Citations

• 1.3 µm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density

  I.R. Sellers;H.Y. Liu;K.M. Groom;D.T. Childs

  154
  Citations

• InGaAs∕AlAsSb∕InP quantum cascade lasers operating at wavelengths close to 3μm

  D. G. Revin;J. W. Cockburn;M. J. Steer;R. J. Airey

  140
  Citations

• Electric-field-dependent carrier capture and escape in self-assembled InAs/GaAs quantum dots

  P. W. Fry;J. J. Finley;L. R. Wilson;A. Lemaître

  137
  Citations

• Intraband relaxation via polaron decay in InAs self-assembled quantum dots

  E. A. Zibik;L. R. Wilson;R. P. Green;G. Bastard

  137
  Citations

• Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots

  P. W. Fry;I. E. Itskevich;S. R. Parnell;J. J. Finley

  132
  Citations

• p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency

  H. Y. Liu;S. L. Liew;T. Badcock;D. J. Mowbray

  125
  Citations

• Surface band-gap narrowing in quantized electron accumulation layers.

  P. D. C. King;T. D. Veal;C. F. McConville;J. Zúñiga-Pérez

  122
  Citations

• Room-temperature 1.6-μm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer

  H. Y. Liu;M. J. Steer;T. J. Badcock;D. J. Mowbray

  121
  Citations

• Influences of the spacer layer growth temperature on multilayer InAs∕GaAs quantum dot structures

  H. Y. Liu;I. R. Sellers;M. Gutiérrez;K. M. Groom

  115
  Citations

• Voltage enhancement in quantum well solar cells

  Keith Barnham;James Connolly;Paul Griffin;Guido Haarpaintner

  114
  Citations