World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
60
Citations
12629
World Ranking
1657
National Ranking
81

Mark Hopkinson publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Mark Hopkinson sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 649 publications — 92nd percentile

92% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Mark Hopkinson D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Mark Hopkinson sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 60 D-Index — 77th percentile

77% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Best Publications

  • Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots

    P W Fry;I E Itskevich;I E Itskevich;D J Mowbray;M S Skolnick

  • Improved performance of 1.3 μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer

    H. Y. Liu;I. R. Sellers;T. J. Badcock;D. J. Mowbray

  • Nature of the Stranski-Krastanow transition during epitaxy of InGaAs on GaAs.

    T. Walther;A. G. Cullis;D. J. Norris;M. Hopkinson

  • Electronic energy levels and energy relaxation mechanisms in self-organized InAs/GaAs quantum dots.

    M. J. Steer;D. J. Mowbray;W. R. Tribe;M. S. Skolnick

  • Optimizing the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure

    H. Y. Liu;M. Hopkinson;C. N. Harrison;M. J. Steer

  • Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers

    L. Harris;D. J. Mowbray;M. S. Skolnick;M. Hopkinson

  • Nuclear Spin Switch in Semiconductor Quantum Dots

    A. I. Tartakovskii;T. Wright;A. Russell;V. I. Falko

  • Fast optical preparation, control, and readout of a single quantum dot spin.

    A. J. Ramsay;S. J. Boyle;R. S. Kolodka;José Brás Barreto de Oliveira;José Brás Barreto de Oliveira

  • Experimental investigation of the effect of wetting-layer states on the gain–current characteristic of quantum-dot lasers

    Daniel Richard Matthews;Huw David Summers;Peter Michael Smowton;M. Hopkinson

  • High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents

    H.Y. Liu;D.T. Childs;T.J. Badcock;K.M. Groom

  • Mode structure of the L3 photonic crystal cavity

    A. R. A. Chalcraft;S. Lam;D. O'Brien;T. F. Krauss

  • Long-wavelength light emission and lasing from InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer

    H. Y. Liu;M. J. Steer;T. J. Badcock;D. J. Mowbray

  • Stranski-Krastanow transition and epitaxial island growth

    A. G. Cullis;D. J. Norris;T. Walther;M. A. Migliorato

  • 1.3 µm InAs/GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density

    I.R. Sellers;H.Y. Liu;K.M. Groom;D.T. Childs

  • InGaAs∕AlAsSb∕InP quantum cascade lasers operating at wavelengths close to 3μm

    D. G. Revin;J. W. Cockburn;M. J. Steer;R. J. Airey

  • Electric-field-dependent carrier capture and escape in self-assembled InAs/GaAs quantum dots

    P. W. Fry;J. J. Finley;L. R. Wilson;A. Lemaître

  • Intraband relaxation via polaron decay in InAs self-assembled quantum dots

    E. A. Zibik;L. R. Wilson;R. P. Green;G. Bastard

  • Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots

    P. W. Fry;I. E. Itskevich;S. R. Parnell;J. J. Finley

  • p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency

    H. Y. Liu;S. L. Liew;T. Badcock;D. J. Mowbray

  • Surface band-gap narrowing in quantized electron accumulation layers.

    P. D. C. King;T. D. Veal;C. F. McConville;J. Zúñiga-Pérez

  • Room-temperature 1.6-μm light emission from InAs/GaAs quantum dots with a thin GaAsSb cap layer

    H. Y. Liu;M. J. Steer;T. J. Badcock;D. J. Mowbray

  • Influences of the spacer layer growth temperature on multilayer InAs∕GaAs quantum dot structures

    H. Y. Liu;I. R. Sellers;M. Gutiérrez;K. M. Groom

  • Voltage enhancement in quantum well solar cells

    Keith Barnham;James Connolly;Paul Griffin;Guido Haarpaintner

Frequent Co-Authors

M. S. Skolnick
M. S. Skolnick University of Sheffield
Huiyun Liu
Huiyun Liu University College London
John P. R. David
John P. R. David University of Sheffield
Jonathan J. Finley
Jonathan J. Finley Technical University of Munich
Laurence Eaves
Laurence Eaves University of Nottingham
A. G. Cullis
A. G. Cullis University of Sheffield
Andrew A. Pitsillides
Andrew A. Pitsillides Royal Veterinary College
Amalia Patanè
Amalia Patanè University of Nottingham
Aristide Lemaître
Aristide Lemaître University of Paris-Saclay
Thomas F. Krauss
Thomas F. Krauss University of York

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