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Materials Science

D-Index
71
Citations
25470
World Ranking
4168
National Ranking
169

Physics

D-Index
75
Citations
26980
World Ranking
3373
National Ranking
298

Research.com Recognitions

  • 1997 - Fellow of the Royal Society, United Kingdom

Overview

Laurence Eaves is affiliated with the University of Nottingham in the United Kingdom. Their research primarily covers the fields of Materials Science and Physics and Astronomy, focusing on subfields such as Materials Chemistry, Atomic and Molecular Physics and Optics, Electrical and Electronic Engineering, Astronomy and Astrophysics, and Biomedical Engineering.

Their work addresses multiple scientific topics, including:

  • Graphene research and applications
  • 2D Materials and Applications
  • Quantum and electron transport phenomena
  • Topological Materials and Phenomena
  • Diamond and Carbon-based Materials Research
  • MXene and MAX Phase Materials
  • Nanowire Synthesis and Applications

Laurence Eaves has published papers in several prominent venues. Frequent publication outlets include:

  • Communications Physics
  • Nature Communications
  • 2D Materials
  • arXiv (Cornell University)
  • Physical Review B

Among recent publications, some of the notable papers are:

  • "Resonant tunnelling into the two-dimensional subbands of InSe layers," 2020, Communications Physics
  • "Epitaxy of boron nitride monolayers for graphene-based lateral heterostructures," 2021, 2D Materials
  • "Van der Waals SnSe2(1−x)S2x Alloys: Composition-Dependent Bowing Coefficient and Electron-Phonon Interaction," 2020, Advanced Functional Materials
  • "Step-flow growth of graphene-boron nitride lateral heterostructures by molecular beam epitaxy," 2020, 2D Materials
  • "Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride," 2022, Physical Review X

Their collaboration network includes frequent co-authors such as A. Patanè, M. T. Greenaway, O. Makarovsky, Peter H. Beton, and Z. R. Kudrynskyi.

Laurence Eaves received recognition as a Fellow of the Royal Society in the United Kingdom in 1997.

Best Publications

  • Field-effect tunneling transistor based on vertical graphene heterostructures.

    L. Britnell;R. V. Gorbachev;R. Jalil;B. D. Belle

  • Vertical field-effect transistor based on graphene?WS2 heterostructures for flexible and transparent electronics

    Thanasis Georgiou;Rashid Jalil;Branson D Belle;Liam Britnell

  • High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

    Denis A. Bandurin;Anastasia V. Tyurnina;Anastasia V. Tyurnina;Geliang L. Yu;Artem Mishchenko

  • Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers

    Liam Britnell;Roman V. Gorbachev;Rashid Jalil;Branson D. Belle

  • Atomically thin boron nitride : a tunnelling barrier for graphene devices

    Liam Britnell;R. V. Gorbachev;R. Jalil;B. D. Belle

  • Resonant tunnelling and negative differential conductance in graphene transistors

    L. Britnell;R.V. Gorbachev;A.K. Geim;L.A. Ponomarenko

  • Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement

    Garry W. Mudd;Simon A. Svatek;Tianhang Ren;Amalia Patanè

  • Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures

    A. Mishchenko;J. S. Tu;Yun Cao;Roman V Gorbachev

  • High Broad-Band Photoresponsivity of Mechanically Formed InSe–Graphene van der Waals Heterostructures

    Garry W. Mudd;Simon A. Svatek;Lee Hague;Oleg Makarovsky

  • Magnon-assisted tunnelling in van der Waals heterostructures based on CrBr3

    D. Ghazaryan;M.T. Greenaway;Z. Wang;V.H. Guarochico-Moreira;V.H. Guarochico-Moreira

  • Temperature dependence of the optical properties of InAs/Al y Ga 1-y As self-organized quantum dots

    A. Polimeni;A. Patane;M. Henini;L. Eaves

  • Probing the hole dispersion curves of a quantum well using resonant magnetotunneling spectroscopy.

    R. K. Hayden;R. K. Hayden;D. K. Maude;D. K. Maude;L. Eaves;L. Eaves;E. C. Valadares;E. C. Valadares

  • Resonant tunneling through the bound states of a single donor atom in a quantum well.

    M. W. Dellow;M. W. Dellow;P. H. Beton;P. H. Beton;C. J. G. M. Langerak;C. J. G. M. Langerak;T. J. Foster;T. J. Foster

  • Direct band-gap crossover in epitaxial monolayer boron nitride.

    C. Elias;P. Valvin;T. Pelini;A. Summerfield

  • Imaging the electron wave function in self-assembled quantum dots.

    E. E. Vdovin;A. Levin;A. Patanè;L. Eaves

  • Magnetic field studies of elastic scattering and optic-phonon emission in resonant-tunneling devices.

    Leadbeater Ml;Alves Es;Eaves L;Henini M

  • Fermi-edge singularity in resonant tunneling.

    A. K. Geim;P. C. Main;N. La Scala;L. Eaves

  • Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures.

    Faguang Yan;Lixia Zhao;Amalia Patanè;PingAn Hu

  • The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals

    G.W. Mudd;M.R. Molas;X. Chen;V. Zólyomi

  • Electronic properties of multilayers and low-dimensional semiconductor structures

    J. M. Chamberlain;L. Eaves;J. C. Portal

  • Observation of 'scarred' wavefunctions in a quantum well with chaotic electron dynamics

    P. B. Wilkinson;T. M. Fromhold;L. Eaves;F. W. Sheard

Frequent Co-Authors

Amalia Patanè
Amalia Patanè University of Nottingham
Peter H. Beton
Peter H. Beton University of Nottingham
Andre K. Geim
Andre K. Geim University of Manchester
M. S. Skolnick
M. S. Skolnick University of Sheffield
C. D. W. Wilkinson
C. D. W. Wilkinson University of Glasgow
Artem Mishchenko
Artem Mishchenko University of Manchester
Jiannong Wang
Jiannong Wang Hong Kong University of Science and Technology
Alexander Belyaev
Alexander Belyaev University of Southampton
Thomas Ihn
Thomas Ihn Solid State Physics Laboratory
Mark Hopkinson
Mark Hopkinson University of Sheffield

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