1997 - Fellow of the Royal Society, United Kingdom
Field-effect tunneling transistor based on vertical graphene heterostructures.
L. Britnell;R. V. Gorbachev;R. Jalil;B. D. Belle.
Vertical field-effect transistor based on graphene?WS2 heterostructures for flexible and transparent electronics
Thanasis Georgiou;Rashid Jalil;Branson D Belle;Liam Britnell.
Nature Nanotechnology (2013)
High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe
Denis A. Bandurin;Anastasia V. Tyurnina;Anastasia V. Tyurnina;Geliang L. Yu;Artem Mishchenko.
Nature Nanotechnology (2017)
Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers
Liam Britnell;Roman V. Gorbachev;Rashid Jalil;Branson D. Belle.
Nano Letters (2012)
Atomically thin boron nitride : a tunnelling barrier for graphene devices
Liam Britnell;R. V. Gorbachev;R. Jalil;B. D. Belle.
arXiv: Mesoscale and Nanoscale Physics (2012)
Resonant tunnelling and negative differential conductance in graphene transistors
L. Britnell;R.V. Gorbachev;A.K. Geim;L.A. Ponomarenko.
Nature Communications (2013)
Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement
Garry W. Mudd;Simon A. Svatek;Tianhang Ren;Amalia Patanè.
Advanced Materials (2013)
Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures
A. Mishchenko;J. S. Tu;Yun Cao;Roman V Gorbachev.
Nature Nanotechnology (2014)
High Broad-Band Photoresponsivity of Mechanically Formed InSe–Graphene van der Waals Heterostructures
Garry W. Mudd;Simon A. Svatek;Lee Hague;Oleg Makarovsky.
Advanced Materials (2015)
Temperature dependence of the optical properties of InAs/Al y Ga 1-y As self-organized quantum dots
A. Polimeni;A. Patane;M. Henini;L. Eaves.
Physical Review B (1999)
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