World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
71
Citations
25470
World Ranking
4166
National Ranking
169

Physics

D-Index
75
Citations
26980
World Ranking
3373
National Ranking
298

Laurence Eaves publication distribution in Physics in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Physics in 2026. The highlighted bar marks where Laurence Eaves sits on this spectrum.

103–122 publications: 7 scientists 123–142 publications: 10 scientists 143–162 publications: 31 scientists 163–182 publications: 35 scientists 183–202 publications: 53 scientists 203–222 publications: 81 scientists 223–242 publications: 85 scientists 243–262 publications: 112 scientists 263–282 publications: 114 scientists 283–302 publications: 126 scientists 303–322 publications: 136 scientists 323–342 publications: 162 scientists 343–362 publications: 155 scientists 363–382 publications: 156 scientists 383–402 publications: 134 scientists 403–422 publications: 145 scientists 423–442 publications: 147 scientists 443–462 publications: 131 scientists 463–482 publications: 131 scientists 483–502 publications: 116 scientists 503–522 publications: 106 scientists 523–542 publications: 103 scientists 543–562 publications: 87 scientists 563–582 publications: 84 scientists 583–602 publications: 94 scientists 603–622 publications: 70 scientists 623–642 publications: 76 scientists 643–662 publications: 60 scientists 663–682 publications: 54 scientists 683–702 publications: 60 scientists 703–722 publications: 48 scientists 723–742 publications: 64 scientists 743–762 publications: 48 scientists 763–782 publications: 37 scientists 783–802 publications: 43 scientists 803–822 publications: 34 scientists 823–842 publications: 36 scientists 843–862 publications: 32 scientists 863–882 publications: 32 scientists 883–902 publications: 31 scientists 903–922 publications: 25 scientists 923–942 publications: 15 scientists 943–962 publications: 24 scientists 963–982 publications: 13 scientists 983–1,002 publications: 21 scientists 1,003–1,022 publications: 21 scientists 1,023–1,042 publications: 16 scientists 1,043–1,062 publications: 9 scientists 1,063–1,082 publications: 19 scientists 1,083–1,102 publications: 11 scientists 1,103–1,122 publications: 17 scientists 1,123–1,142 publications: 11 scientists 1,143–1,162 publications: 7 scientists 1,163–1,182 publications: 4 scientists 1,183–1,202 publications: 10 scientists 1,203–1,222 publications: 8 scientists 1,223–1,242 publications: 16 scientists 1,243–1,262 publications: 4 scientists 1,263–1,282 publications: 10 scientists 1,283–1,302 publications: 5 scientists 1,303–1,322 publications: 7 scientists 1,323–1,342 publications: 4 scientists 1,343–1,362 publications: 8 scientists 1,363–1,382 publications: 6 scientists 1,383–1,402 publications: 7 scientists 1,403–1,422 publications: 3 scientists 1,423–1,442 publications: 4 scientists 1,443–1,462 publications: 4 scientists 1,463–1,468 publications: 3 scientists 1,469+ publications: 100 scientists
103 publications 1,469+

This scientist: 724 publications — 79th percentile

79% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,469 publications or more.

Laurence Eaves D-index placement in Physics in 2026

The chart shows the D-index (discipline H-index) distribution of Physics scientists ranked by Research.com in 2026. The highlighted bar marks where Laurence Eaves sits on this spectrum.

70–71 D-Index: 76 scientists 72–73 D-Index: 110 scientists 74–75 D-Index: 143 scientists 76–77 D-Index: 153 scientists 78–79 D-Index: 144 scientists 80–81 D-Index: 167 scientists 82–83 D-Index: 167 scientists 84–85 D-Index: 166 scientists 86–87 D-Index: 132 scientists 88–89 D-Index: 155 scientists 90–91 D-Index: 134 scientists 92–93 D-Index: 137 scientists 94–95 D-Index: 102 scientists 96–97 D-Index: 112 scientists 98–99 D-Index: 110 scientists 100–101 D-Index: 116 scientists 102–103 D-Index: 97 scientists 104–105 D-Index: 103 scientists 106–107 D-Index: 87 scientists 108–109 D-Index: 90 scientists 110–111 D-Index: 67 scientists 112–113 D-Index: 78 scientists 114–115 D-Index: 75 scientists 116–117 D-Index: 67 scientists 118–119 D-Index: 69 scientists 120–121 D-Index: 60 scientists 122–123 D-Index: 59 scientists 124–125 D-Index: 53 scientists 126–127 D-Index: 42 scientists 128–129 D-Index: 41 scientists 130–131 D-Index: 33 scientists 132–133 D-Index: 32 scientists 134–135 D-Index: 45 scientists 136–137 D-Index: 19 scientists 138–139 D-Index: 24 scientists 140–141 D-Index: 28 scientists 142–143 D-Index: 31 scientists 144–145 D-Index: 22 scientists 146–147 D-Index: 20 scientists 148–149 D-Index: 12 scientists 150–151 D-Index: 16 scientists 152–153 D-Index: 24 scientists 154–155 D-Index: 23 scientists 156–157 D-Index: 15 scientists 158–159 D-Index: 15 scientists 160–161 D-Index: 11 scientists 162–163 D-Index: 17 scientists 164–165 D-Index: 12 scientists 166–167 D-Index: 11 scientists 168–169 D-Index: 9 scientists 170–171 D-Index: 9 scientists 172–173 D-Index: 11 scientists 174–175 D-Index: 4 scientists 176–177 D-Index: 8 scientists 178–179 D-Index: 5 scientists 180–181 D-Index: 3 scientists 182–183 D-Index: 4 scientists 184 D-Index: 4 scientists 185+ D-Index: 99 scientists
70 D-Index 185+

This scientist: 75 D-Index — 9th percentile

9% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 185 D-Index or more.

Research.com Recognitions

  • 1997 - Fellow of the Royal Society, United Kingdom

Overview

Laurence Eaves is affiliated with the University of Nottingham in the United Kingdom. Their research primarily covers the fields of Materials Science and Physics and Astronomy, focusing on subfields such as Materials Chemistry, Atomic and Molecular Physics and Optics, Electrical and Electronic Engineering, Astronomy and Astrophysics, and Biomedical Engineering.

Their work addresses multiple scientific topics, including:

  • Graphene research and applications
  • 2D Materials and Applications
  • Quantum and electron transport phenomena
  • Topological Materials and Phenomena
  • Diamond and Carbon-based Materials Research
  • MXene and MAX Phase Materials
  • Nanowire Synthesis and Applications

Laurence Eaves has published papers in several prominent venues. Frequent publication outlets include:

  • Communications Physics
  • Nature Communications
  • 2D Materials
  • arXiv (Cornell University)
  • Physical Review B

Among recent publications, some of the notable papers are:

  • "Resonant tunnelling into the two-dimensional subbands of InSe layers," 2020, Communications Physics
  • "Epitaxy of boron nitride monolayers for graphene-based lateral heterostructures," 2021, 2D Materials
  • "Van der Waals SnSe2(1−x)S2x Alloys: Composition-Dependent Bowing Coefficient and Electron-Phonon Interaction," 2020, Advanced Functional Materials
  • "Step-flow growth of graphene-boron nitride lateral heterostructures by molecular beam epitaxy," 2020, 2D Materials
  • "Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride," 2022, Physical Review X

Their collaboration network includes frequent co-authors such as A. Patanè, M. T. Greenaway, O. Makarovsky, Peter H. Beton, and Z. R. Kudrynskyi.

Laurence Eaves received recognition as a Fellow of the Royal Society in the United Kingdom in 1997.

Best Publications

  • Field-effect tunneling transistor based on vertical graphene heterostructures.

    L. Britnell;R. V. Gorbachev;R. Jalil;B. D. Belle

  • Vertical field-effect transistor based on graphene?WS2 heterostructures for flexible and transparent electronics

    Thanasis Georgiou;Rashid Jalil;Branson D Belle;Liam Britnell

  • High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

    Denis A. Bandurin;Anastasia V. Tyurnina;Anastasia V. Tyurnina;Geliang L. Yu;Artem Mishchenko

  • Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers

    Liam Britnell;Roman V. Gorbachev;Rashid Jalil;Branson D. Belle

  • Atomically thin boron nitride : a tunnelling barrier for graphene devices

    Liam Britnell;R. V. Gorbachev;R. Jalil;B. D. Belle

  • Resonant tunnelling and negative differential conductance in graphene transistors

    L. Britnell;R.V. Gorbachev;A.K. Geim;L.A. Ponomarenko

  • Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement

    Garry W. Mudd;Simon A. Svatek;Tianhang Ren;Amalia Patanè

  • Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures

    A. Mishchenko;J. S. Tu;Yun Cao;Roman V Gorbachev

  • High Broad-Band Photoresponsivity of Mechanically Formed InSe–Graphene van der Waals Heterostructures

    Garry W. Mudd;Simon A. Svatek;Lee Hague;Oleg Makarovsky

  • Magnon-assisted tunnelling in van der Waals heterostructures based on CrBr3

    D. Ghazaryan;M.T. Greenaway;Z. Wang;V.H. Guarochico-Moreira;V.H. Guarochico-Moreira

  • Temperature dependence of the optical properties of InAs/Al y Ga 1-y As self-organized quantum dots

    A. Polimeni;A. Patane;M. Henini;L. Eaves

  • Probing the hole dispersion curves of a quantum well using resonant magnetotunneling spectroscopy.

    R. K. Hayden;R. K. Hayden;D. K. Maude;D. K. Maude;L. Eaves;L. Eaves;E. C. Valadares;E. C. Valadares

  • Resonant tunneling through the bound states of a single donor atom in a quantum well.

    M. W. Dellow;M. W. Dellow;P. H. Beton;P. H. Beton;C. J. G. M. Langerak;C. J. G. M. Langerak;T. J. Foster;T. J. Foster

  • Direct band-gap crossover in epitaxial monolayer boron nitride.

    C. Elias;P. Valvin;T. Pelini;A. Summerfield

  • Imaging the electron wave function in self-assembled quantum dots.

    E. E. Vdovin;A. Levin;A. Patanè;L. Eaves

  • Magnetic field studies of elastic scattering and optic-phonon emission in resonant-tunneling devices.

    Leadbeater Ml;Alves Es;Eaves L;Henini M

  • Fermi-edge singularity in resonant tunneling.

    A. K. Geim;P. C. Main;N. La Scala;L. Eaves

  • Fast, multicolor photodetection with graphene-contacted p-GaSe/n-InSe van der Waals heterostructures.

    Faguang Yan;Lixia Zhao;Amalia Patanè;PingAn Hu

  • The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals

    G.W. Mudd;M.R. Molas;X. Chen;V. Zólyomi

  • Electronic properties of multilayers and low-dimensional semiconductor structures

    J. M. Chamberlain;L. Eaves;J. C. Portal

  • Observation of 'scarred' wavefunctions in a quantum well with chaotic electron dynamics

    P. B. Wilkinson;T. M. Fromhold;L. Eaves;F. W. Sheard

Frequent Co-Authors

Amalia Patanè
Amalia Patanè University of Nottingham
Peter H. Beton
Peter H. Beton University of Nottingham
Andre K. Geim
Andre K. Geim University of Manchester
M. S. Skolnick
M. S. Skolnick University of Sheffield
C. D. W. Wilkinson
C. D. W. Wilkinson University of Glasgow
Artem Mishchenko
Artem Mishchenko University of Manchester
Jiannong Wang
Jiannong Wang Hong Kong University of Science and Technology
Alexander Belyaev
Alexander Belyaev University of Southampton
Thomas Ihn
Thomas Ihn Solid State Physics Laboratory
Mark Hopkinson
Mark Hopkinson University of Sheffield

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