World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
51
Citations
12663
World Ranking
9769
National Ranking
2762

Jiannong Wang publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Jiannong Wang sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 349 publications — 70th percentile

70% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Jiannong Wang D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Jiannong Wang sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 51 D-Index — 24th percentile

24% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Jiannong Wang is affiliated with the Hong Kong University of Science and Technology in China. Their research primarily spans the fields of Materials Science and Engineering, with significant contributions to subfields such as Materials Chemistry, Electrical and Electronic Engineering, Atomic and Molecular Physics and Optics, Condensed Matter Physics, and Electronic, Optical and Magnetic Materials.

The scientist's work encompasses a variety of topics including 2D Materials and Applications, Perovskite Materials and Applications, Topological Materials and Phenomena, Graphene Research and Applications, Chalcogenide Semiconductor Thin Films, Conducting Polymers and Applications, and GaN-based Semiconductor Devices and Materials.

The recent research output of Jiannong Wang includes several notable papers:

  • Sub-10-nm graphene nanoribbons with atomically smooth edges from squashed carbon nanotubes, 2021, Nature Electronics
  • Interface property-functionality interplay suppresses bimolecular recombination facilitating above 18% efficiency organic solar cells embracing simplistic fabrication, 2023, Energy & Environmental Science
  • Expediting Hydrogen Evolution through Topological Surface States on Bi2Te3, 2020, ACS Catalysis
  • Below bandgap photoluminescence of an AlN crystal: Co-existence of two different charging states of a defect center, 2020, APL Materials
  • Temperature enhanced responsivity and speed in an AlGaN/GaN metal-heterostructure-metal photodetector, 2021, Applied Physics Letters

Frequent co-authors in Jiannong Wang's publications include:

  • Zijing Jin
  • Baikui Li
  • Hui Li
  • Chunyu Zhao
  • I. K. Sou

The scientist regularly publishes in venues such as arXiv (Cornell University), SSRN Electronic Journal, Applied Physics Letters, Advanced Functional Materials, and Chemical Engineering Journal.

Best Publications

  • Superconductivity in 4 angstrom single-walled carbon nanotubes.

    Zikang Tang;Lixia Zhang;Ning Wang;Xixiang Zhang

  • Highly monodisperse polymer-capped ZnO nanoparticles: Preparation and optical properties

    Lin Guo;Shihe Yang;Chunlei Yang;Ping Yu.

  • High-performance hole-extraction layer of sol-gel-processed NiO nanocrystals for inverted planar perovskite solar cells.

    Zonglong Zhu;Yang Bai;Teng Zhang;Zhike Liu

  • Impurity effect on weak antilocalization in the topological insulator Bi 2 Te 3

    Hong-Tao He;Gan Wang;Tao Zhang;Iam Keong Sou

  • Negative Magnetoresistance in Dirac Semimetal Cd3As2

    Hui Li;Hongtao He;Hai-Zhou Lu;Huachen Zhang

  • Carrier relaxation and thermal activation of localized excitons in self-organized InAs multilayers grown on GaAs substrates

    Zhongying Xu;Zhendong Lü;Xiaoping Yang;Zhiliang Yuan

  • Synthesis and Characterization of Poly(vinylpyrrolidone)-Modified Zinc Oxide Nanoparticles

    Lin Guo;Shihe Yang;Chunlei Yang;Ping Yu.

  • Cost-efficient clamping solar cells using candle soot for hole extraction from ambipolar perovskites

    Zhanhua Wei;Keyou Yan;Haining Chen;Ya Yi

  • 3D Arrays of 1024-Pixel Image Sensors based on Lead Halide Perovskite Nanowires.

    Leilei Gu;Mohammad Mahdi Tavakoli;Daquan Zhang;Qianpeng Zhang

  • Field emission from crystalline copper sulphide nanowire arrays

    Jun Chen;S. Z. Deng;N. S. Xu;Suhua Wang

  • High-Performance Graphene-Based Hole Conductor-Free Perovskite Solar Cells: Schottky Junction Enhanced Hole Extraction and Electron Blocking

    Keyou Yan;Keyou Yan;Zhanhua Wei;Jinkai Li;Haining Chen

  • Mono-sized single-wall carbon nanotubes formed in channels of AlPO4-5 single crystal

    Zikang Tang;Handong Sun;Jiannong Wang;Jiesheng Chen

  • The Van der Waals Epitaxy of Bi 2 Se 3 on the Vicinal Si(111) Surface: An Approach for Preparing High-quality Thin Films of a Topological Insulator

    Handong Li;Handong Li;Ziyan Wang;X. Kan;Xinli Guo

  • High‐Efficiency All‐Polymer Solar Cells Based on a Pair of Crystalline Low‐Bandgap Polymers

    Cheng Mu;Peng Liu;Wei Ma;Kui Jiang

  • Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator

    H.D. Li;Z.Y. Wang;X. Kan;X. Guo

  • Effective-mass theory for InAs/GaAs strained coupled quantum dots

    Shushen Li;Shushen Li;Jianbai Xia;Jianbai Xia;Zhiliang Yuan;Zhiliang Yuan;Zhongying Xu;Zhongying Xu

  • Polyfluorene Derivatives are High‐Performance Organic Hole‐Transporting Materials for Inorganic−Organic Hybrid Perovskite Solar Cells

    Zonglong Zhu;Yang Bai;Harrison Ka Hin Lee;Cheng Mu

  • Electron-concentration-dependent quantum-well luminescence: Evidence for a negatively charged exciton

    H. Buhmann;L. Mansouri;J. Wang;P. H. Beton

  • Spectral dependence of spin photocurrent and current-induced spin polarization in an InGaAs/InAlAs two-dimensional electron gas.

    Chunlei Yang;Hongtao He;Lu Ding;Lijie Cui;Lijie Cui

  • Enhanced ultraviolet emission and optical properties in polyvinyl pyrrolidone surface modified ZnO quantum dots

    Chunlei Yang;Jiannong Wang;Weikun Ge;Lin Guo

Frequent Co-Authors

Shihe Yang
Shihe Yang Hong Kong University of Science and Technology
Zikang Tang
Zikang Tang University of Macau
Peter H. Beton
Peter H. Beton University of Nottingham
Ning Wang
Ning Wang Hong Kong University of Science and Technology
Laurence Eaves
Laurence Eaves University of Nottingham
Ping Sheng
Ping Sheng Hong Kong University of Science and Technology
Che Ting Chan
Che Ting Chan Hong Kong University of Science and Technology
Kei May Lau
Kei May Lau Hong Kong University of Science and Technology
Maohai Xie
Maohai Xie University of Hong Kong
Kevin J. Chen
Kevin J. Chen Hong Kong University of Science and Technology

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