World's Best Scientists 2026 revealed!
Faxian Xiu

Faxian Xiu

D-Index & Metrics

Materials Science

D-Index
64
Citations
12983
World Ranking
5969
National Ranking
1801

Faxian Xiu publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Faxian Xiu sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 228 publications — 40th percentile

40% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

Faxian Xiu D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Faxian Xiu sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 64 D-Index — 55th percentile

55% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

Faxian Xiu is affiliated with Fudan University in China, specializing in research within physics and materials science. Their scholarly work deeply engages with atomic and molecular physics, optics, materials chemistry, and electrical and electronic engineering, alongside condensed matter physics.

The scientist's academic focus covers several subfields, including:

  • Atomic and Molecular Physics, and Optics
  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Xiu's work addresses core topics such as topological materials and phenomena, two-dimensional materials and applications, graphene research, quantum and electron transport phenomena, terahertz technology, magnetic properties of thin films, and advanced condensed matter physics.

  • Topological Materials and Phenomena
  • 2D Materials and Applications
  • Graphene research and applications
  • Quantum and electron transport phenomena
  • Terahertz technology and applications
  • Magnetic properties of thin films
  • Advanced Condensed Matter Physics

A selection of recent papers by Faxian Xiu includes:

  • "Nonreciprocal superconducting NbSe2 antenna," 2020, Nature Communications
  • "Light-Tunable Ferromagnetism in Atomically Thin Fe3GeTe2 Driven by Femtosecond Laser Pulse," 2020, Physical Review Letters
  • "High Mobility 3D Dirac Semimetal (Cd3As2) for Ultrafast Photoactive Terahertz Photonics," 2021, Advanced Functional Materials
  • "Multiprincipal Element M2FeC (M = Ti,V,Nb,Ta,Zr) MAX Phases with Synergistic Effect of Dielectric and Magnetic Loss," 2023, Advanced Science
  • "The discovery of dynamic chiral anomaly in a Weyl semimetal NbAs," 2020, Nature Communications

Throughout their career, Xiu has published extensively in high-impact and frequently contributing venues, which include:

  • Nano Letters
  • arXiv (Cornell University)
  • Physical Review B
  • Nature Communications
  • National Science Review

Xiu collaborates frequently with a range of co-authors, including:

  • Yunkun Yang (35 joint publications)
  • Pengliang Leng (22 joint publications)
  • Enze Zhang (20 joint publications)
  • Linfeng Ai (20 joint publications)
  • Shanshan Liu (17 joint publications)

Best Publications

  • Manipulating surface states in topological insulator nanoribbons

    Faxian Xiu;Liang He;Yong Wang;Yong Wang;Lina Cheng

  • Photoluminescence investigation of the carrier recombination processes in ZnO quantum dots and nanocrystals

    Vladimir A. Fonoberov;Khan A. Alim;Alexander A. Balandin;Faxian Xiu

  • High-mobility Sb-doped p-type ZnO by molecular-beam epitaxy

    F. X. Xiu;Z. Yang;L. J. Mandalapu;D. T. Zhao

  • ReS2-Based Field-Effect Transistors and Photodetectors

    Enze Zhang;Yibo Jin;Xiang Yuan;Weiyi Wang

  • Tunable Ambipolar Polarization-Sensitive Photodetectors Based on High-Anisotropy ReSe2 Nanosheets.

    Enze Zhang;Peng Wang;Zhe Li;Haifeng Wang

  • Arrayed Van Der Waals Broadband Detectors for Dual-Band Detection

    Peng Wang;Peng Wang;Shanshan Liu;Wenjin Luo;Hehai Fang

  • Tunable charge-trap memory based on few-layer MoS2.

    Enze Zhang;Weiyi Wang;Cheng Zhang;Yibo Jin

  • Enhancing Perovskite Solar Cell Performance by Interface Engineering Using CH3NH3PbBr0.9I2.1 Quantum Dots

    Mingyang Cha;Peimei Da;Jun Wang;Weiyi Wang

  • Quantum Hall effect based on Weyl orbits in Cd 3 As 2

    Cheng Zhang;Yi Zhang;Xiang Yuan;Shiheng Lu

  • Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy

    F. X. Xiu;Z. Yang;L. J. Mandalapu;D. T. Zhao

  • Very large magnetoresistance in graphene nanoribbons

    Jingwei Bai;Rui Cheng;Faxian Xiu;Lei Liao

  • Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te

    Lihong Bao;Liang He;Nicholas Meyer;Xufeng Kou

  • A robust and tuneable mid-infrared optical switch enabled by bulk Dirac fermions

    Chunhui Zhu;Fengqiu Wang;Yafei Meng;Xiang Yuan

  • Wafer-scale two-dimensional ferromagnetic Fe 3 GeTe 2 thin films grown by molecular beam epitaxy

    Shanshan Liu;Xiang Yuan;Yichao Zou;Yu Sheng

  • Zeeman splitting and dynamical mass generation in Dirac semimetal ZrTe5

    Yanwen Liu;Xiang Yuan;Cheng Zhang;Zhao Jin

  • A stacked memory device on logic 3D technology for ultra-high-density data storage

    Jiyoung Kim;Augustin J. Hong;Sung Min Kim;Kyeong Sik Shin

  • Epitaxial growth of Bi2Se3 topological insulator thin films on Si (111)

    Liang He;Faxian Xiu;Yong Wang;Alexei V. Fedorov

  • Electric-field-controlled ferromagnetism in high-Curie-temperature Mn0.05Ge0.95 quantum dots.

    Faxian Xiu;Yong Wang;Jiyoung Kim;Augustin Hong

  • Arrayed van der Waals Vertical Heterostructures Based on 2D GaSe Grown by Molecular Beam Epitaxy

    Xiang Yuan;Lei Tang;Shanshan Liu;Peng Wang

  • Surface-Dominated Conduction in a 6 nm thick Bi2Se3 Thin Film

    Liang He;Faxian Xiu;Xinxin Yu;Marcus Teague

  • p-type ZnO films with solid-source phosphorus doping by molecular-beam epitaxy

    F. X. Xiu;Z. Yang;L. J. Mandalapu;J. L. Liu

Frequent Co-Authors

Kang L. Wang
Kang L. Wang University of California, Los Angeles
Jin Zou
Jin Zou University of Queensland
Zhigang Chen
Zhigang Chen Queensland University of Technology
Stefano Sanvito
Stefano Sanvito Trinity College Dublin
Jianlin Liu
Jianlin Liu University of California, Riverside
Peng Zhou
Peng Zhou Fudan University
Yi Shi
Yi Shi Nanjing University
Fengqiu Wang
Fengqiu Wang Nanjing University
Weida Hu
Weida Hu Chinese Academy of Sciences
Roland Kawakami
Roland Kawakami The Ohio State University

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