World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
74
Citations
17454
World Ranking
728
National Ranking
119

Materials Science

D-Index
71
Citations
16711
World Ranking
4275
National Ranking
1343

Peng Zhou publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Peng Zhou sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 262 publications — 48th percentile

48% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Peng Zhou D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Peng Zhou sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 74 D-Index — 90th percentile

90% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Peng Zhou is affiliated with Fudan University in China and has contributed extensively to research in engineering and materials science, focusing primarily on electrical and electronic engineering as well as materials chemistry. Their work also spans biomedical engineering, cellular and molecular neuroscience, and artificial intelligence.

The scientist has published numerous papers across various specialized topics, including:

  • Advanced Memory and Neural Computing
  • 2D Materials and Applications
  • Ferroelectric and Negative Capacitance Devices
  • Graphene Research and Applications
  • Perovskite Materials and Applications
  • Nanowire Synthesis and Applications
  • MXene and MAX Phase Materials

Peng Zhou's frequent collaborators include Wenzhong Bao, Chunsen Liu, Weida Hu, Shuiyuan Wang, and Jing Wan.

The scientist has published extensively in several leading research venues, such as:

  • Nature Communications
  • Advanced Functional Materials
  • Advanced Materials
  • Nature Electronics
  • Advanced Science

Significant recent papers by Peng Zhou include:

  • "Two-dimensional materials for next-generation computing technologies," 2020, Nature Nanotechnology
  • "Unipolar barrier photodetectors based on van der Waals heterostructures," 2021, Nature Electronics
  • "All-in-one two-dimensional retinomorphic hardware device for motion detection and recognition," 2021, Nature Nanotechnology
  • "Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing," 2021, Nature Communications
  • "Two-dimensional devices and integration towards the silicon lines," 2022, Nature Materials

Peng Zhou's research focuses on advancing the integration and applications of two-dimensional materials, ferroelectric devices, and neural computing technologies. Their work contributes to the fields of next-generation electronics and memory devices by exploring new materials and device architectures.

Best Publications

  • Two-dimensional materials for next-generation computing technologies.

    Chunsen Liu;Huawei Chen;Shuiyuan Wang;Qi Liu;Qi Liu

  • Unipolar barrier photodetectors based on van der Waals heterostructures

    Yunfeng Chen;Yang Wang;Yang Wang;Zhen Wang;Yue Gu

  • All-in-one two-dimensional retinomorphic hardware device for motion detection and recognition.

    Zhenhan Zhang;Zhenhan Zhang;Shuiyuan Wang;Chunsen Liu;Runzhang Xie

  • A MoS 2 /PTCDA Hybrid Heterojunction Synapse with Efficient Photoelectric Dual Modulation and Versatility

    Shuiyuan Wang;Chunsheng Chen;Zhihao Yu;Yongli He

  • A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications.

    Chunsen Liu;Xiao Yan;Xiongfei Song;Shijin Ding

  • ReS2-Based Field-Effect Transistors and Photodetectors

    Enze Zhang;Yibo Jin;Xiang Yuan;Weiyi Wang

  • Tunable Ambipolar Polarization-Sensitive Photodetectors Based on High-Anisotropy ReSe2 Nanosheets.

    Enze Zhang;Peng Wang;Zhe Li;Haifeng Wang

  • Self‐Assembled Networked PbS Distribution Quantum Dots for Resistive Switching and Artificial Synapse Performance Boost of Memristors

    Xiaobing Yan;Xiaobing Yan;Yifei Pei;Huawei Chen;Jianhui Zhao

  • Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing.

    Shuiyuan Wang;Lan Liu;Lurong Gan;Huawei Chen

  • Graphene Oxide Quantum Dots Based Memristors with Progressive Conduction Tuning for Artificial Synaptic Learning

    Xiaobing Yan;Xiaobing Yan;Lei Zhang;Huawei Chen;Xiaoyan Li

  • Tunable charge-trap memory based on few-layer MoS2.

    Enze Zhang;Weiyi Wang;Cheng Zhang;Yibo Jin

  • Ultra-low power Hf0.5Zr0.5O2 based ferroelectric tunnel junction synapses for hardware neural network applications

    Lin Chen;Tian-Yu Wang;Ya-Wei Dai;Ming-Yang Cha

  • Study of structure and optical properties of silver oxide films by ellipsometry, XRD and XPS methods

    Xiao-Yong Gao;Song-You Wang;Jing Li;Yu-Xiang Zheng

  • Evolution of the band-gap and optical properties of graphene oxide with controllable reduction level

    Yan Shen;Songbo Yang;Peng Zhou;Qingqing Sun

  • Recent Advances on Neuromorphic Devices Based on Chalcogenide Phase-Change Materials

    Ming Xu;Xianliang Mai;Jun Lin;Wei Zhang

  • Reproducible unipolar resistance switching in stoichiometric ZrO2 films

    X. Wu;P. Zhou;J. Li;L. Y. Chen

  • Memory materials and devices: From concept to application

    Zhenhan Zhang;Zongwei Wang;Tuo Shi;Chong Bi

  • Ultrafast non-volatile flash memory based on van der Waals heterostructures

    Lan Liu;Yi Ding;Jiayi Li;Chunsen Liu

  • Small footprint transistor architecture for photoswitching logic and in situ memory.

    Chunsen Liu;Huawei Chen;Xiang Hou;Heng Zhang

  • A New Memristor with 2D Ti 3 C 2 T x MXene Flakes as an Artificial Bio-Synapse

    Xiaobing Yan;Xiaobing Yan;Kaiyang Wang;Jianhui Zhao;Zhenyu Zhou

  • Tunable SnSe2 /WSe2 Heterostructure Tunneling Field Effect Transistor.

    Xiao Yan;Chunsen Liu;Chao Li;Wenzhong Bao

  • New loci and coding variants confer risk for age-related macular degeneration in East Asians

    Ching Yu Cheng;Kenji Yamashiro;Li Jia Chen;Jee Yun Ahn

Frequent Co-Authors

David Wei Zhang
David Wei Zhang Fudan University
Shi-Jin Ding
Shi-Jin Ding Fudan University
Wenzhong Bao
Wenzhong Bao Fudan University
Weida Hu
Weida Hu Chinese Academy of Sciences
Jianlu Wang
Jianlu Wang Fudan University
Faxian Xiu
Faxian Xiu Fudan University
Hong-Liang Lu
Hong-Liang Lu Fudan University
Hangbing Lv
Hangbing Lv Chinese Academy of Sciences
Xudong Wang
Xudong Wang University of Wisconsin–Madison
Junhao Chu
Junhao Chu Chinese Academy of Sciences

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