World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
74
Citations
17454
World Ranking
728
National Ranking
118

Materials Science

D-Index
71
Citations
16711
World Ranking
4277
National Ranking
1342

Overview

Peng Zhou is affiliated with Fudan University in China and has contributed extensively to research in engineering and materials science, focusing primarily on electrical and electronic engineering as well as materials chemistry. Their work also spans biomedical engineering, cellular and molecular neuroscience, and artificial intelligence.

The scientist has published numerous papers across various specialized topics, including:

  • Advanced Memory and Neural Computing
  • 2D Materials and Applications
  • Ferroelectric and Negative Capacitance Devices
  • Graphene Research and Applications
  • Perovskite Materials and Applications
  • Nanowire Synthesis and Applications
  • MXene and MAX Phase Materials

Peng Zhou's frequent collaborators include Wenzhong Bao, Chunsen Liu, Weida Hu, Shuiyuan Wang, and Jing Wan.

The scientist has published extensively in several leading research venues, such as:

  • Nature Communications
  • Advanced Functional Materials
  • Advanced Materials
  • Nature Electronics
  • Advanced Science

Significant recent papers by Peng Zhou include:

  • "Two-dimensional materials for next-generation computing technologies," 2020, Nature Nanotechnology
  • "Unipolar barrier photodetectors based on van der Waals heterostructures," 2021, Nature Electronics
  • "All-in-one two-dimensional retinomorphic hardware device for motion detection and recognition," 2021, Nature Nanotechnology
  • "Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing," 2021, Nature Communications
  • "Two-dimensional devices and integration towards the silicon lines," 2022, Nature Materials

Peng Zhou's research focuses on advancing the integration and applications of two-dimensional materials, ferroelectric devices, and neural computing technologies. Their work contributes to the fields of next-generation electronics and memory devices by exploring new materials and device architectures.

Best Publications

  • Two-dimensional materials for next-generation computing technologies.

    Chunsen Liu;Huawei Chen;Shuiyuan Wang;Qi Liu;Qi Liu

  • Unipolar barrier photodetectors based on van der Waals heterostructures

    Yunfeng Chen;Yang Wang;Yang Wang;Zhen Wang;Yue Gu

  • All-in-one two-dimensional retinomorphic hardware device for motion detection and recognition.

    Zhenhan Zhang;Zhenhan Zhang;Shuiyuan Wang;Chunsen Liu;Runzhang Xie

  • A MoS 2 /PTCDA Hybrid Heterojunction Synapse with Efficient Photoelectric Dual Modulation and Versatility

    Shuiyuan Wang;Chunsheng Chen;Zhihao Yu;Yongli He

  • A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications.

    Chunsen Liu;Xiao Yan;Xiongfei Song;Shijin Ding

  • ReS2-Based Field-Effect Transistors and Photodetectors

    Enze Zhang;Yibo Jin;Xiang Yuan;Weiyi Wang

  • Tunable Ambipolar Polarization-Sensitive Photodetectors Based on High-Anisotropy ReSe2 Nanosheets.

    Enze Zhang;Peng Wang;Zhe Li;Haifeng Wang

  • Self‐Assembled Networked PbS Distribution Quantum Dots for Resistive Switching and Artificial Synapse Performance Boost of Memristors

    Xiaobing Yan;Xiaobing Yan;Yifei Pei;Huawei Chen;Jianhui Zhao

  • Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing.

    Shuiyuan Wang;Lan Liu;Lurong Gan;Huawei Chen

  • Graphene Oxide Quantum Dots Based Memristors with Progressive Conduction Tuning for Artificial Synaptic Learning

    Xiaobing Yan;Xiaobing Yan;Lei Zhang;Huawei Chen;Xiaoyan Li

  • Tunable charge-trap memory based on few-layer MoS2.

    Enze Zhang;Weiyi Wang;Cheng Zhang;Yibo Jin

  • Ultra-low power Hf0.5Zr0.5O2 based ferroelectric tunnel junction synapses for hardware neural network applications

    Lin Chen;Tian-Yu Wang;Ya-Wei Dai;Ming-Yang Cha

  • Study of structure and optical properties of silver oxide films by ellipsometry, XRD and XPS methods

    Xiao-Yong Gao;Song-You Wang;Jing Li;Yu-Xiang Zheng

  • Evolution of the band-gap and optical properties of graphene oxide with controllable reduction level

    Yan Shen;Songbo Yang;Peng Zhou;Qingqing Sun

  • Recent Advances on Neuromorphic Devices Based on Chalcogenide Phase-Change Materials

    Ming Xu;Xianliang Mai;Jun Lin;Wei Zhang

  • Reproducible unipolar resistance switching in stoichiometric ZrO2 films

    X. Wu;P. Zhou;J. Li;L. Y. Chen

  • Memory materials and devices: From concept to application

    Zhenhan Zhang;Zongwei Wang;Tuo Shi;Chong Bi

  • Ultrafast non-volatile flash memory based on van der Waals heterostructures

    Lan Liu;Yi Ding;Jiayi Li;Chunsen Liu

  • Small footprint transistor architecture for photoswitching logic and in situ memory.

    Chunsen Liu;Huawei Chen;Xiang Hou;Heng Zhang

  • A New Memristor with 2D Ti 3 C 2 T x MXene Flakes as an Artificial Bio-Synapse

    Xiaobing Yan;Xiaobing Yan;Kaiyang Wang;Jianhui Zhao;Zhenyu Zhou

  • Tunable SnSe2 /WSe2 Heterostructure Tunneling Field Effect Transistor.

    Xiao Yan;Chunsen Liu;Chao Li;Wenzhong Bao

  • New loci and coding variants confer risk for age-related macular degeneration in East Asians

    Ching Yu Cheng;Kenji Yamashiro;Li Jia Chen;Jee Yun Ahn

Frequent Co-Authors

David Wei Zhang
David Wei Zhang Fudan University
Shi-Jin Ding
Shi-Jin Ding Fudan University
Wenzhong Bao
Wenzhong Bao Fudan University
Weida Hu
Weida Hu Chinese Academy of Sciences
Jianlu Wang
Jianlu Wang Fudan University
Faxian Xiu
Faxian Xiu Fudan University
Hong-Liang Lu
Hong-Liang Lu Fudan University
Hangbing Lv
Hangbing Lv Chinese Academy of Sciences
Xudong Wang
Xudong Wang University of Wisconsin–Madison
Junhao Chu
Junhao Chu Chinese Academy of Sciences

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