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Electronics and Electrical Engineering
Korea
2026

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
80
Citations
24432
World Ranking
532
National Ranking
8

Materials Science

D-Index
78
Citations
21633
World Ranking
2980
National Ranking
92

Research.com Recognitions

  • 2026 - Research.com Electronics and Electrical Engineering in Korea Leader Award
  • 2025 - Research.com Electronics and Electrical Engineering in Korea Leader Award
  • 2022 - Research.com Electronics and Electrical Engineering in Korea Leader Award

Overview

Hyunsang Hwang is affiliated with Pohang University of Science and Technology in South Korea. Their academic profile currently presents limited public data on specific research outputs, publications, and collaborative networks.

While no records of recent papers, frequent co-authors, or publication venues are documented, the affiliation with a prominent technical university suggests involvement in scientific research aligned with the institution's focus areas. No detailed fields or subfields of study, main research topics, or book publications have been specified.

There are no listed awards or recognitions attributed to this researcher at this time, and the scientist is currently active.

Best Publications

  • Neuromorphic computing using non-volatile memory

    Geoffrey W. Burr;Robert M. Shelby;Abu Sebastian;Sangbum Kim

  • Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element

    Geoffrey W. Burr;Robert M. Shelby;Severin Sidler;Carmelo di Nolfo

  • Organic core-sheath nanowire artificial synapses with femtojoule energy consumption.

    Wentao Xu;Sung-Yong Min;Hyunsang Hwang;Tae-Woo Lee

  • Improved Synaptic Behavior Under Identical Pulses Using AlO x /HfO 2 Bilayer RRAM Array for Neuromorphic Systems

    Jiyong Woo;Kibong Moon;Jeonghwan Song;Sangheon Lee

  • Access devices for 3D crosspoint memorya)

    Geoffrey W. Burr;Rohit S. Shenoy;Kumar Virwani;Pritish Narayanan

  • Optimization of Conductance Change in Pr 1– x Ca x MnO 3 -Based Synaptic Devices for Neuromorphic Systems

    Jun-Woo Jang;Sangsu Park;Geoffrey W. Burr;Hyunsang Hwang

  • Neuromorphic Hardware System for Visual Pattern Recognition With Memristor Array and CMOS Neuron

    Myonglae Chu;Byoungho Kim;Sangsu Park;Hyunsang Hwang

  • Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device

    Kyungah Seo;Insung Kim;Seungjae Jung;Minseok Jo

  • Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O

    Hyunsang Hwang;Wenchi Ting;Bikas Maiti;Dim Lee Kwong

  • Additional hardening in harmonic structured materials by strain partitioning and back stress

    Hyung Keun Park;Kei Ameyama;Jongmyung Yoo;Hyunsang Hwang

  • HfZrO x -Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications

    Seungyeol Oh;Taeho Kim;Myunghoon Kwak;Jeonghwan Song

  • Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications

    Myungwoo Son;Joonmyoung Lee;Jubong Park;Jungho Shin

  • Three-dimensional integration of organic resistive memory devices

    Sunghoon Song;Byungjin Cho;Tae Wook Kim;Yongsung Ji

  • TiO x -Based RRAM Synapse With 64-Levels of Conductance and Symmetric Conductance Change by Adopting a Hybrid Pulse Scheme for Neuromorphic Computing

    Jaesung Park;Myunghoon Kwak;Kibong Moon;Jiyong Woo

  • Reproducible hysteresis and resistive switching in metal-CuxO-metal heterostructures

    R. Dong;D. S. Lee;W. F. Xiang;S. J. Oh

  • RRAM-based synapse devices for neuromorphic systems

    K. Moon;S. Lim;J. Park;C. Sung

  • Experimental demonstration and tolerancing of a large-scale neural network (165,000 synapses), using phase-change memory as the synaptic weight element

    G.W. Burr;R.M. Shelby;C. di Nolfo;J.W. Jang

  • Ferroelectric materials for neuromorphic computing

    S. Oh;H. Hwang;I. K. Yoo

  • Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications

    Dongsoo Lee;Hyejung Choi;Hyunjun Sim;Dooho Choi

  • Rewritable Switching of One Diode–One Resistor Nonvolatile Organic Memory Devices

    Byungjin Cho;Tae-Wook Kim;Tae-Wook Kim;Sunghoon Song;Yongsung Ji

  • Electronic system with memristive synapses for pattern recognition

    Sangsu Park;Myonglae Chu;Jongin Kim;Jinwoo Noh

  • RRAM-based synapse for neuromorphic system with pattern recognition function

    S. Park;H. Kim;M. Choo;J. Noh

Frequent Co-Authors

Jiyong Woo
Jiyong Woo Kyungpook National University
Sanghun Jeon
Sanghun Jeon Korea Advanced Institute of Science and Technology
Takhee Lee
Takhee Lee Seoul National University
Jaesung Park
Jaesung Park Pohang University of Science and Technology
Byoung Hun Lee
Byoung Hun Lee Pohang University of Science and Technology
Tae-Wook Kim
Tae-Wook Kim Jeonbuk National University
Jack C. Lee
Jack C. Lee The University of Texas at Austin
Rino Choi
Rino Choi Inha University
Seong-Ju Park
Seong-Ju Park Gwangju Institute of Science and Technology
Geoffrey W. Burr
Geoffrey W. Burr IBM (United States)

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