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Sanghun Jeon

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Electronics and Electrical Engineering 57 1957 1877 50 50 286 13341
Materials Science 57 7902 7640 334 331 284 13298

Sanghun Jeon publications per year

The chart shows the history of publications by Sanghun Jeon between 2000 and 2025, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Sanghun Jeon published across 26 years, from 2000 to 2025, averaging 13.2 papers a year. Output peaked at 25 publications in 2024. 40 of the 344 publications appeared in the last two years.

No. of publications
5 10 15 20 25
Bar chart. Horizontal axis: year, 2000 to 2025. Vertical axis: number of publications, 0 to 25. Peak 25 publications in 2024. 2000: 3 publications 2001: 7 publications 2002: 12 publications 2003: 5 publications 2004: 8 publications 2005: 13 publications 2006: 14 publications 2007: 7 publications 2008: 3 publications 2009: 5 publications 2010: 16 publications 2011: 21 publications 2012: 24 publications 2013: 15 publications 2014: 14 publications 2015: 20 publications 2016: 14 publications 2017: 18 publications 2018: 15 publications 2019: 9 publications 2020: 19 publications 2021: 16 publications 2022: 16 publications 2023: 10 publications 2024: 25 publications 2025: 15 publications
2000 2025

344 publications in total across all disciplines

View publications per year as a table
Sanghun Jeon: publications per year, 2000 to 2025
Year Publications
2000 3
2001 7
2002 12
2003 5
2004 8
2005 13
2006 14
2007 7
2008 3
2009 5
2010 16
2011 21
2012 24
2013 15
2014 14
2015 20
2016 14
2017 18
2018 15
2019 9
2020 19
2021 16
2022 16
2023 10
2024 25
2025 15
Total 344
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Sanghun Jeon publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Sanghun Jeon sits on this spectrum.

No. of scientists
100 200 300 400
Bar chart with 53 bars. Horizontal axis: publications, 34–53 to 1,065+. Vertical axis: number of scientists, 0 to 445. Most scientists, 445, have 174–193 publications. The last bar groups every scientist with 1,065 publications or more. The highlighted bar, 274–293 publications, is where this scientist sits. 34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34–53 publications 1,065+

This scientist: 286 publications — 54th percentile

54% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

View publications distribution as a table
Number of Electronics and Electrical Engineering scientists by publication count, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
Publications Scientists This scientist
34–53 24
54–73 52
74–93 114
94–113 203
114–133 269
134–153 355
154–173 403
174–193 445
194–213 430
214–233 431
234–253 399
254–273 366
274–293 335 286
294–313 300
314–333 276
334–353 250
354–373 214
374–393 187
394–413 152
414–433 169
434–453 147
454–473 111
474–493 117
494–513 103
514–533 99
534–553 92
554–573 75
574–593 58
594–613 69
614–633 50
634–653 62
654–673 54
674–693 44
694–713 37
714–733 28
734–753 26
754–773 26
774–793 19
794–813 23
814–833 20
834–853 16
854–873 20
874–893 11
894–913 11
914–933 16
934–953 13
954–973 10
974–993 11
994–1,013 9
1,014–1,033 9
1,034–1,053 10
1,054–1,064 6
1,065+ 99
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Sanghun Jeon D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Sanghun Jeon sits on this spectrum.

No. of scientists
50 100 150 200 250
Bar chart with 82 bars. Horizontal axis: D-Index, 30 to 111+. Vertical axis: number of scientists, 0 to 263. Most scientists, 263, have 32 D-Index. The last bar groups every scientist with 111 D-Index or more. The highlighted bar, 57 D-Index, is where this scientist sits. 30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 57 D-Index — 72nd percentile

72% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

View D-Index distribution as a table
Number of Electronics and Electrical Engineering scientists by D-index, Research.com 2026 ranking edition. Based on 6,875 ranked scientists.
D-Index Scientists This scientist
30 178
31 257
32 263
33 262
34 244
35 236
36 211
37 220
38 214
39 214
40 205
41 187
42 194
43 201
44 155
45 189
46 148
47 160
48 134
49 130
50 141
51 156
52 108
53 130
54 112
55 97
56 111
57 102 57
58 108
59 120
60 103
61 93
62 92
63 74
64 77
65 73
66 64
67 69
68 60
69 39
70 57
71 59
72 46
73 49
74 38
75 35
76 32
77 35
78 31
79 22
80 34
81 31
82 34
83 23
84 18
85 30
86 19
87 19
88 20
89 8
90 17
91 7
92 14
93 9
94 15
95 10
96 12
97 10
98 10
99 12
100 16
101 5
102 7
103 7
104 8
105 9
106 13
107 4
108 5
109 10
110 8
111+ 96
Download as CSV

Overview

Sanghun Jeon is affiliated with the Korea Advanced Institute of Science and Technology in South Korea. Their research primarily spans the fields of engineering and materials science, with a strong focus on electrical and electronic engineering as well as materials chemistry.

Their main topics of work include:

  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • MXene and MAX Phase Materials
  • Advanced Memory and Neural Computing
  • Ferroelectric and Piezoelectric Materials
  • Advanced Sensor and Energy Harvesting Materials
  • Advancements in Semiconductor Devices and Circuit Design

Frequent publication venues for Sanghun Jeon's work are:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • ACS Applied Materials & Interfaces
  • Journal of Materials Chemistry C
  • ACS Applied Electronic Materials

Some of the recent papers they have contributed to include:

  • The Influence of Top and Bottom Metal Electrodes on Ferroelectricity of Hafnia (2021) - IEEE Transactions on Electron Devices
  • Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode (2020) - Nanoscale
  • Ultra-thin Hf0.5Zr0.5O2 thin-film-based ferroelectric tunnel junction via stress induced crystallization (2020) - Applied Physics Letters
  • Insertion of HfO2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors (2020) - IEEE Transactions on Electron Devices
  • A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology (2022) - Nano Convergence

Frequent co-authors working alongside Sanghun Jeon have included:

  • Junghyeon Hwang
  • Giuk Kim
  • Hunbeom Shin
  • Jinho Ahn
  • Minhyun Jung

Best Publications

  • Highly Stretchable Resistive Pressure Sensors Using a Conductive Elastomeric Composite on a Micropyramid Array

    Chwee-Lin Choong;Mun-Bo Shim;Byoung-Sun Lee;Sanghun Jeon;Sanghun Jeon

  • Highly stretchable electric circuits from a composite material of silver nanoparticles and elastomeric fibres

    Minwoo Park;Jungkyun Im;Minkwan Shin;Yuho Min

  • High performance amorphous oxide thin film transistors with self-aligned top-gate structure

    Jae Chul Park;Sang Wook Kim;Sun Il Kim;Huaxiang Yin

  • Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays

    Sanghun Jeon;Seung-Eon Ahn;Ihun Song;Chang Jung Kim

  • A flexible bimodal sensor array for simultaneous sensing of pressure and temperature.

    Nguyen Thanh Tien;Sanghun Jeon;Sanghun Jeon;Do‐Il Kim;Tran Quang Trung

  • Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors

    Sungsik Lee;Khashayar Ghaffarzadeh;Arokia Nathan;John Robertson

  • HfZrO x -Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications

    Seungyeol Oh;Taeho Kim;Myunghoon Kwak;Jeonghwan Song

  • Hot Carrier Trapping Induced Negative Photoconductance in InAs Nanowires toward Novel Nonvolatile Memory

    Yiming Yang;Xingyue Peng;Hong-Seok Kim;Taeho Kim

  • Metal Oxide Thin Film Phototransistor for Remote Touch Interactive Displays

    Seung-Eon Ahn;Ihun Song;Sanghun Jeon;Youg Woo Jeon

  • Persistent photoconductivity in Hf–In–Zn–O thin film transistors

    Khashayar Ghaffarzadeh;Arokia Nathan;John Robertson;Sangwook Kim

  • Amorphous Oxide Semiconductor TFTs for Displays and Imaging

    Arokia Nathan;Sungsik Lee;Sanghun Jeon;John Robertson

  • The Influence of Top and Bottom Metal Electrodes on Ferroelectricity of Hafnia

    Yongsun Lee;Youngin Goh;Junghyeon Hwang;Dipjyoti Das

  • The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2.

    Youngin Goh;Sanghun Jeon

  • Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode

    Youngin Goh;Sung Hyun Cho;Sang-Hee Ko Park;Sanghun Jeon

  • Effect of hygroscopic nature on the electrical characteristics of lanthanide oxides (Pr2O3, Sm2O3, Gd2O3, and Dy2O3)

    Sanghun Jeon;Hyunsang Hwang

  • Instability in threshold voltage and subthreshold behavior in Hf–In–Zn–O thin film transistors induced by bias-and light-stress

    Khashayar Ghaffarzadeh;Arokia Nathan;John Robertson;Sangwook Kim

  • Ultra-thin Hf0.5Zr0.5O2 thin-film-based ferroelectric tunnel junction via stress induced crystallization

    Youngin Goh;Junghyeon Hwang;Yongsun Lee;Minki Kim

  • Low-voltage, high-sensitivity and high-reliability bimodal sensor array with fully inkjet-printed flexible conducting electrode for low power consumption electronic skin

    Kyungkwan Kim;Minhyun Jung;Bumjin Kim;Jihoon Kim

  • Insertion of HfO 2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors

    Vekateswarlu Gaddam;Dipjyoti Das;Sanghun Jeon

  • 180nm gate length amorphous InGaZnO thin film transistor for high density image sensor applications

    Sanghun Jeon;Sungho Park;Ihun Song;Ji-Hyun Hur

  • Paper-Based Bimodal Sensor for Electronic Skin Applications.

    Minhyun Jung;Kyungkwan Kim;Bumjin Kim;Haena Cheong

  • Transparent Semiconducting Oxide Technology for Touch Free Interactive Flexible Displays

    Sungsik Lee;Sanghun Jeon;Reza Chaji;Arokia Nathan

  • Electrical characteristics of ZrOxNy prepared by NH3 annealing of ZrO2

    Sanghun Jeon;Chel Jong Choi;Tae Yeon Seong;Hyunsang Hwang

  • Excellent electrical characteristics of lanthanide (Pr, Nd, Sm, Gd, and Dy) oxide and lanthanide-doped oxide for MOS gate dielectric applications

    Sanghun Jeon;Kiju Im;Hyundoek Yang;Hyelan Lee

Frequent Co-Authors

Chang-Jung Kim
Chang-Jung Kim Samsung (South Korea)
Hyunsang Hwang
Hyunsang Hwang Pohang University of Science and Technology
Seung-Eon Ahn
Seung-Eon Ahn Tech University of Korea
U-In Chung
U-In Chung Samsung (South Korea)
Arokia Nathan
Arokia Nathan University of Cambridge
Jung-Dal Choi
Jung-Dal Choi SK Hynix
Young Keun Kim
Young Keun Kim Korea University
John Robertson
John Robertson University of Cambridge
Kinam Kim
Kinam Kim Samsung (South Korea)
Sunil Kim
Sunil Kim Samsung (South Korea)

External Links

Google Scholar page

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Best Scientists Citing Sanghun Jeon

Shunpei Yamazaki

Shunpei Yamazaki

Semiconductor Energy Laboratory (Japan)

Publications: 254

Kie Y. Ahn

Kie Y. Ahn

Micron (United States)

Publications: 56

Leonard Forbes

Leonard Forbes

L. Forbes and Associates LLC

Publications: 55

Jun Koyama

Jun Koyama

Semiconductor Energy Laboratory (Japan)

Publications: 41

Arokia Nathan

Arokia Nathan

University of Cambridge

Publications: 30

Ting-Chang Chang

Ting-Chang Chang

National Sun Yat-sen University

Publications: 30

Shengdong Zhang

Shengdong Zhang

Peking University

Publications: 25

Zhenan Bao

Zhenan Bao

Stanford University

Publications: 24

Wenlong Cheng

Wenlong Cheng

Monash University

Publications: 24

Nae-Eung Lee

Nae-Eung Lee

Sungkyunkwan University

Publications: 23

Dong Myong Kim

Dong Myong Kim

Kookmin University

Publications: 23

Sung-Jin Choi

Sung-Jin Choi

Kookmin University

Publications: 18

Zhong Lin Wang

Zhong Lin Wang

Georgia Institute of Technology

Publications: 18

Jin-Seong Park

Jin-Seong Park

Hanyang University

Publications: 18

Shu Gong

Shu Gong

Monash University

Publications: 17

Hyunsang Hwang

Hyunsang Hwang

Pohang University of Science and Technology

Publications: 16

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