World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
57
Citations
13341
World Ranking
1957
National Ranking
50

Materials Science

D-Index
57
Citations
13298
World Ranking
7902
National Ranking
334

Sanghun Jeon publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where Sanghun Jeon sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 286 publications — 54th percentile

54% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

Sanghun Jeon D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where Sanghun Jeon sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 57 D-Index — 72nd percentile

72% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Overview

Sanghun Jeon is affiliated with the Korea Advanced Institute of Science and Technology in South Korea. Their research primarily spans the fields of engineering and materials science, with a strong focus on electrical and electronic engineering as well as materials chemistry.

Their main topics of work include:

  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • MXene and MAX Phase Materials
  • Advanced Memory and Neural Computing
  • Ferroelectric and Piezoelectric Materials
  • Advanced Sensor and Energy Harvesting Materials
  • Advancements in Semiconductor Devices and Circuit Design

Frequent publication venues for Sanghun Jeon's work are:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • ACS Applied Materials & Interfaces
  • Journal of Materials Chemistry C
  • ACS Applied Electronic Materials

Some of the recent papers they have contributed to include:

  • The Influence of Top and Bottom Metal Electrodes on Ferroelectricity of Hafnia (2021) - IEEE Transactions on Electron Devices
  • Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode (2020) - Nanoscale
  • Ultra-thin Hf0.5Zr0.5O2 thin-film-based ferroelectric tunnel junction via stress induced crystallization (2020) - Applied Physics Letters
  • Insertion of HfO2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors (2020) - IEEE Transactions on Electron Devices
  • A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology (2022) - Nano Convergence

Frequent co-authors working alongside Sanghun Jeon have included:

  • Junghyeon Hwang
  • Giuk Kim
  • Hunbeom Shin
  • Jinho Ahn
  • Minhyun Jung

Best Publications

  • Highly Stretchable Resistive Pressure Sensors Using a Conductive Elastomeric Composite on a Micropyramid Array

    Chwee-Lin Choong;Mun-Bo Shim;Byoung-Sun Lee;Sanghun Jeon;Sanghun Jeon

  • Highly stretchable electric circuits from a composite material of silver nanoparticles and elastomeric fibres

    Minwoo Park;Jungkyun Im;Minkwan Shin;Yuho Min

  • High performance amorphous oxide thin film transistors with self-aligned top-gate structure

    Jae Chul Park;Sang Wook Kim;Sun Il Kim;Huaxiang Yin

  • Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays

    Sanghun Jeon;Seung-Eon Ahn;Ihun Song;Chang Jung Kim

  • A flexible bimodal sensor array for simultaneous sensing of pressure and temperature.

    Nguyen Thanh Tien;Sanghun Jeon;Sanghun Jeon;Do‐Il Kim;Tran Quang Trung

  • Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors

    Sungsik Lee;Khashayar Ghaffarzadeh;Arokia Nathan;John Robertson

  • HfZrO x -Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications

    Seungyeol Oh;Taeho Kim;Myunghoon Kwak;Jeonghwan Song

  • Hot Carrier Trapping Induced Negative Photoconductance in InAs Nanowires toward Novel Nonvolatile Memory

    Yiming Yang;Xingyue Peng;Hong-Seok Kim;Taeho Kim

  • Metal Oxide Thin Film Phototransistor for Remote Touch Interactive Displays

    Seung-Eon Ahn;Ihun Song;Sanghun Jeon;Youg Woo Jeon

  • Persistent photoconductivity in Hf–In–Zn–O thin film transistors

    Khashayar Ghaffarzadeh;Arokia Nathan;John Robertson;Sangwook Kim

  • Amorphous Oxide Semiconductor TFTs for Displays and Imaging

    Arokia Nathan;Sungsik Lee;Sanghun Jeon;John Robertson

  • The Influence of Top and Bottom Metal Electrodes on Ferroelectricity of Hafnia

    Yongsun Lee;Youngin Goh;Junghyeon Hwang;Dipjyoti Das

  • The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2.

    Youngin Goh;Sanghun Jeon

  • Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode

    Youngin Goh;Sung Hyun Cho;Sang-Hee Ko Park;Sanghun Jeon

  • Effect of hygroscopic nature on the electrical characteristics of lanthanide oxides (Pr2O3, Sm2O3, Gd2O3, and Dy2O3)

    Sanghun Jeon;Hyunsang Hwang

  • Instability in threshold voltage and subthreshold behavior in Hf–In–Zn–O thin film transistors induced by bias-and light-stress

    Khashayar Ghaffarzadeh;Arokia Nathan;John Robertson;Sangwook Kim

  • Ultra-thin Hf0.5Zr0.5O2 thin-film-based ferroelectric tunnel junction via stress induced crystallization

    Youngin Goh;Junghyeon Hwang;Yongsun Lee;Minki Kim

  • Low-voltage, high-sensitivity and high-reliability bimodal sensor array with fully inkjet-printed flexible conducting electrode for low power consumption electronic skin

    Kyungkwan Kim;Minhyun Jung;Bumjin Kim;Jihoon Kim

  • Insertion of HfO 2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors

    Vekateswarlu Gaddam;Dipjyoti Das;Sanghun Jeon

  • 180nm gate length amorphous InGaZnO thin film transistor for high density image sensor applications

    Sanghun Jeon;Sungho Park;Ihun Song;Ji-Hyun Hur

  • Paper-Based Bimodal Sensor for Electronic Skin Applications.

    Minhyun Jung;Kyungkwan Kim;Bumjin Kim;Haena Cheong

  • Transparent Semiconducting Oxide Technology for Touch Free Interactive Flexible Displays

    Sungsik Lee;Sanghun Jeon;Reza Chaji;Arokia Nathan

  • Electrical characteristics of ZrOxNy prepared by NH3 annealing of ZrO2

    Sanghun Jeon;Chel Jong Choi;Tae Yeon Seong;Hyunsang Hwang

  • Excellent electrical characteristics of lanthanide (Pr, Nd, Sm, Gd, and Dy) oxide and lanthanide-doped oxide for MOS gate dielectric applications

    Sanghun Jeon;Kiju Im;Hyundoek Yang;Hyelan Lee

Frequent Co-Authors

Chang-Jung Kim
Chang-Jung Kim Samsung (South Korea)
Hyunsang Hwang
Hyunsang Hwang Pohang University of Science and Technology
Seung-Eon Ahn
Seung-Eon Ahn Tech University of Korea
U-In Chung
U-In Chung Samsung (South Korea)
Arokia Nathan
Arokia Nathan University of Cambridge
Young Keun Kim
Young Keun Kim Korea University
John Robertson
John Robertson University of Cambridge
Kinam Kim
Kinam Kim Samsung (South Korea)
Sunil Kim
Sunil Kim Samsung (South Korea)

External Links

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Related Online Degrees & Career Pathways

For students interested in Electronics and Electrical Engineering, exploring related online degrees can provide flexibility and faster entry into the workforce. Many reputable institutions now offer online colleges with frequent start dates, allowing learners to begin their studies without waiting for traditional semester schedules.

Additionally, pursuing quick certifications that pay well can help supplement technical skills and boost employability in niche areas within the field, such as electronics maintenance or controls systems. These programs often suit those looking for rapid advancement or a career pivot.

For individuals who prefer independent work environments, engineering roles can align well with good paying jobs for introverts, offering opportunities to focus on design, analysis, or programming with minimal social interaction.

Finally, complementing technical expertise with leadership skills through the fastest online project management degree programs can open doors to management roles within engineering teams, merging practical and organizational strengths efficiently.

Best Scientists Citing Sanghun Jeon

Trending Scientists

Recently Published Articles