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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
57
Citations
13341
World Ranking
1957
National Ranking
50

Materials Science

D-Index
57
Citations
13298
World Ranking
7904
National Ranking
334

Overview

Sanghun Jeon is affiliated with the Korea Advanced Institute of Science and Technology in South Korea. Their research primarily spans the fields of engineering and materials science, with a strong focus on electrical and electronic engineering as well as materials chemistry.

Their main topics of work include:

  • Ferroelectric and Negative Capacitance Devices
  • Semiconductor materials and devices
  • MXene and MAX Phase Materials
  • Advanced Memory and Neural Computing
  • Ferroelectric and Piezoelectric Materials
  • Advanced Sensor and Energy Harvesting Materials
  • Advancements in Semiconductor Devices and Circuit Design

Frequent publication venues for Sanghun Jeon's work are:

  • IEEE Transactions on Electron Devices
  • IEEE Electron Device Letters
  • ACS Applied Materials & Interfaces
  • Journal of Materials Chemistry C
  • ACS Applied Electronic Materials

Some of the recent papers they have contributed to include:

  • The Influence of Top and Bottom Metal Electrodes on Ferroelectricity of Hafnia (2021) - IEEE Transactions on Electron Devices
  • Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode (2020) - Nanoscale
  • Ultra-thin Hf0.5Zr0.5O2 thin-film-based ferroelectric tunnel junction via stress induced crystallization (2020) - Applied Physics Letters
  • Insertion of HfO2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors (2020) - IEEE Transactions on Electron Devices
  • A review on morphotropic phase boundary in fluorite-structure hafnia towards DRAM technology (2022) - Nano Convergence

Frequent co-authors working alongside Sanghun Jeon have included:

  • Junghyeon Hwang
  • Giuk Kim
  • Hunbeom Shin
  • Jinho Ahn
  • Minhyun Jung

Best Publications

  • Highly Stretchable Resistive Pressure Sensors Using a Conductive Elastomeric Composite on a Micropyramid Array

    Chwee-Lin Choong;Mun-Bo Shim;Byoung-Sun Lee;Sanghun Jeon;Sanghun Jeon

  • Highly stretchable electric circuits from a composite material of silver nanoparticles and elastomeric fibres

    Minwoo Park;Jungkyun Im;Minkwan Shin;Yuho Min

  • High performance amorphous oxide thin film transistors with self-aligned top-gate structure

    Jae Chul Park;Sang Wook Kim;Sun Il Kim;Huaxiang Yin

  • Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays

    Sanghun Jeon;Seung-Eon Ahn;Ihun Song;Chang Jung Kim

  • A flexible bimodal sensor array for simultaneous sensing of pressure and temperature.

    Nguyen Thanh Tien;Sanghun Jeon;Sanghun Jeon;Do‐Il Kim;Tran Quang Trung

  • Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors

    Sungsik Lee;Khashayar Ghaffarzadeh;Arokia Nathan;John Robertson

  • HfZrO x -Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications

    Seungyeol Oh;Taeho Kim;Myunghoon Kwak;Jeonghwan Song

  • Hot Carrier Trapping Induced Negative Photoconductance in InAs Nanowires toward Novel Nonvolatile Memory

    Yiming Yang;Xingyue Peng;Hong-Seok Kim;Taeho Kim

  • Metal Oxide Thin Film Phototransistor for Remote Touch Interactive Displays

    Seung-Eon Ahn;Ihun Song;Sanghun Jeon;Youg Woo Jeon

  • Persistent photoconductivity in Hf–In–Zn–O thin film transistors

    Khashayar Ghaffarzadeh;Arokia Nathan;John Robertson;Sangwook Kim

  • Amorphous Oxide Semiconductor TFTs for Displays and Imaging

    Arokia Nathan;Sungsik Lee;Sanghun Jeon;John Robertson

  • The Influence of Top and Bottom Metal Electrodes on Ferroelectricity of Hafnia

    Yongsun Lee;Youngin Goh;Junghyeon Hwang;Dipjyoti Das

  • The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2.

    Youngin Goh;Sanghun Jeon

  • Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode

    Youngin Goh;Sung Hyun Cho;Sang-Hee Ko Park;Sanghun Jeon

  • Effect of hygroscopic nature on the electrical characteristics of lanthanide oxides (Pr2O3, Sm2O3, Gd2O3, and Dy2O3)

    Sanghun Jeon;Hyunsang Hwang

  • Instability in threshold voltage and subthreshold behavior in Hf–In–Zn–O thin film transistors induced by bias-and light-stress

    Khashayar Ghaffarzadeh;Arokia Nathan;John Robertson;Sangwook Kim

  • Ultra-thin Hf0.5Zr0.5O2 thin-film-based ferroelectric tunnel junction via stress induced crystallization

    Youngin Goh;Junghyeon Hwang;Yongsun Lee;Minki Kim

  • Low-voltage, high-sensitivity and high-reliability bimodal sensor array with fully inkjet-printed flexible conducting electrode for low power consumption electronic skin

    Kyungkwan Kim;Minhyun Jung;Bumjin Kim;Jihoon Kim

  • Insertion of HfO 2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors

    Vekateswarlu Gaddam;Dipjyoti Das;Sanghun Jeon

  • 180nm gate length amorphous InGaZnO thin film transistor for high density image sensor applications

    Sanghun Jeon;Sungho Park;Ihun Song;Ji-Hyun Hur

  • Paper-Based Bimodal Sensor for Electronic Skin Applications.

    Minhyun Jung;Kyungkwan Kim;Bumjin Kim;Haena Cheong

  • Transparent Semiconducting Oxide Technology for Touch Free Interactive Flexible Displays

    Sungsik Lee;Sanghun Jeon;Reza Chaji;Arokia Nathan

  • Electrical characteristics of ZrOxNy prepared by NH3 annealing of ZrO2

    Sanghun Jeon;Chel Jong Choi;Tae Yeon Seong;Hyunsang Hwang

  • Excellent electrical characteristics of lanthanide (Pr, Nd, Sm, Gd, and Dy) oxide and lanthanide-doped oxide for MOS gate dielectric applications

    Sanghun Jeon;Kiju Im;Hyundoek Yang;Hyelan Lee

Frequent Co-Authors

Chang-Jung Kim
Chang-Jung Kim Samsung (South Korea)
Hyunsang Hwang
Hyunsang Hwang Pohang University of Science and Technology
Seung-Eon Ahn
Seung-Eon Ahn Tech University of Korea
U-In Chung
U-In Chung Samsung (South Korea)
Arokia Nathan
Arokia Nathan University of Cambridge
Young Keun Kim
Young Keun Kim Korea University
John Robertson
John Robertson University of Cambridge
Kinam Kim
Kinam Kim Samsung (South Korea)
Sunil Kim
Sunil Kim Samsung (South Korea)

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