Sanghun Jeon mainly investigates Optoelectronics, Thin-film transistor, Transistor, Gate dielectric and Nanotechnology. Sanghun Jeon interconnects Layer and Electrical engineering in the investigation of issues within Optoelectronics. His Thin-film transistor study integrates concerns from other disciplines, such as Threshold voltage, Wide-bandgap semiconductor, Photodiode and Photodetector.
His research in Transistor intersects with topics in Thin film, Heterojunction, Organic semiconductor and Electronics. His Nanotechnology research is multidisciplinary, incorporating elements of Composite number, Resistive touchscreen and Elastomer. His study looks at the relationship between Composite number and topics such as Electrical conductor, which overlap with Substrate.
His scientific interests lie mostly in Optoelectronics, Transistor, Thin-film transistor, Layer and Electrical engineering. The concepts of his Optoelectronics study are interwoven with issues in Electronic engineering, Gate dielectric and Gate oxide. His Transistor research integrates issues from Photodetector, Pixel, Light sensing and Signal.
His Thin-film transistor research includes themes of Threshold voltage, Amorphous solid, Wide-bandgap semiconductor and Photoconductivity. His work in the fields of Substrate overlaps with other areas such as Communication channel. When carried out as part of a general Electrical engineering research project, his work on Voltage and Electronic circuit is frequently linked to work in Trap, therefore connecting diverse disciplines of study.
Sanghun Jeon mainly focuses on Optoelectronics, Ferroelectricity, Thin-film transistor, Dielectric and Transistor. His is doing research in Electronic skin, Tunnel junction, Semiconductor, Electron mobility and Photocurrent, both of which are found in Optoelectronics. Sanghun Jeon combines subjects such as Amorphous solid and Threshold voltage with his study of Thin-film transistor.
His Amorphous solid study combines topics from a wide range of disciplines, such as Composite material and Transient. His Dielectric research is multidisciplinary, relying on both Layer, Hafnium and Rapid thermal annealing. His work carried out in the field of Transistor brings together such families of science as Conductance, MNIST database, Neuromorphic engineering and Neural network simulator.
His primary scientific interests are in Optoelectronics, Ferroelectricity, Transistor, Electronic skin and Condensed matter physics. His Optoelectronics research includes elements of Electrical engineering and Thin-film transistor. Sanghun Jeon has researched Ferroelectricity in several fields, including Polarization, Composite material, Quantum tunnelling and Switching time.
His Transistor study combines topics in areas such as Artificial neural network, Neuromorphic engineering, MNIST database, Neural network simulator and Conductance. His Electronic skin study frequently draws connections to other fields, such as Layer. The Condensed matter physics study combines topics in areas such as Orthorhombic crystal system and Dielectric.
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Highly Stretchable Resistive Pressure Sensors Using a Conductive Elastomeric Composite on a Micropyramid Array
Chwee-Lin Choong;Mun-Bo Shim;Byoung-Sun Lee;Sanghun Jeon;Sanghun Jeon.
Advanced Materials (2014)
High performance amorphous oxide thin film transistors with self-aligned top-gate structure
Jae Chul Park;Sang Wook Kim;Sun Il Kim;Huaxiang Yin.
international electron devices meeting (2009)
Highly stretchable electric circuits from a composite material of silver nanoparticles and elastomeric fibres
Minwoo Park;Jungkyun Im;Minkwan Shin;Yuho Min.
Nature Nanotechnology (2012)
Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays
Sanghun Jeon;Seung-Eon Ahn;Ihun Song;Chang Jung Kim.
Nature Materials (2012)
A flexible bimodal sensor array for simultaneous sensing of pressure and temperature.
Nguyen Thanh Tien;Sanghun Jeon;Sanghun Jeon;Do‐Il Kim;Tran Quang Trung.
Advanced Materials (2014)
Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors
Sungsik Lee;Khashayar Ghaffarzadeh;Arokia Nathan;John Robertson.
Applied Physics Letters (2011)
HfZrO x -Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications
Seungyeol Oh;Taeho Kim;Myunghoon Kwak;Jeonghwan Song.
IEEE Electron Device Letters (2017)
Persistent photoconductivity in Hf–In–Zn–O thin film transistors
Khashayar Ghaffarzadeh;Arokia Nathan;John Robertson;Sangwook Kim.
Applied Physics Letters (2010)
Metal Oxide Thin Film Phototransistor for Remote Touch Interactive Displays
Seung-Eon Ahn;Ihun Song;Sanghun Jeon;Youg Woo Jeon.
Advanced Materials (2012)
Effect of hygroscopic nature on the electrical characteristics of lanthanide oxides (Pr2O3, Sm2O3, Gd2O3, and Dy2O3)
Sanghun Jeon;Hyunsang Hwang.
Journal of Applied Physics (2003)
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