The scientist’s investigation covers issues in Optoelectronics, Electrical engineering, Thin-film transistor, Transistor and Threshold voltage. His is involved in several facets of Electrical engineering study, as is seen by his studies on MOSFET and CMOS. The concepts of his Thin-film transistor study are interwoven with issues in Field-effect transistor, Drain-induced barrier lowering, Polishing, Chemical-mechanical planarization and Electronic engineering.
His research integrates issues of Silicon and Capacitor in his study of Transistor. He has researched Threshold voltage in several fields, including Instability, Stress, Condensed matter physics, Dielectric and Deposition. His Liquid-crystal display research includes elements of Doping and Saturation.
Shengdong Zhang spends much of his time researching Optoelectronics, Thin-film transistor, Transistor, Threshold voltage and Electrical engineering. A large part of his Optoelectronics studies is devoted to Doping. His research in Thin-film transistor tackles topics such as Annealing which are related to areas like Analytical chemistry.
His work deals with themes such as Display device, Pixel, Zinc, Logic gate and Capacitor, which intersect with Transistor. His Threshold voltage research integrates issues from Electron mobility, Condensed matter physics, Field effect, Stress and Sputter deposition. His Electrical engineering study combines topics from a wide range of disciplines, such as Silicon on insulator, Silicon and Amorphous silicon.
Shengdong Zhang mainly focuses on Optoelectronics, Thin-film transistor, Transistor, AMOLED and Threshold voltage. His Optoelectronics study integrates concerns from other disciplines, such as Perovskite and Logic gate. His study in Thin-film transistor is interdisciplinary in nature, drawing from both Annealing, Leakage, Gate driver, Dielectric and Gate dielectric.
To a larger extent, Shengdong Zhang studies Voltage with the aim of understanding Transistor. His AMOLED research focuses on subjects like Pixel, which are linked to Analog-to-digital converter, Quantization, Linearity and Electronic engineering. The concepts of his Threshold voltage study are interwoven with issues in Aluminium and Saturation.
Shengdong Zhang mostly deals with Optoelectronics, Thin-film transistor, Transistor, Perovskite and Annealing. His research on Optoelectronics often connects related topics like Capacitor. His research in Thin-film transistor intersects with topics in Hard mask, Amorphous silicon, Dielectric, Analytical chemistry and Gate dielectric.
Shengdong Zhang studies Threshold voltage which is a part of Transistor. The study incorporates disciplines such as Photodiode, Photodetector, Responsivity, Band gap and Graphene in addition to Perovskite. Shengdong Zhang combines subjects such as Sheet resistance and Thermal stability with his study of Annealing.
This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.
A novel ultrathin elevated channel low-temperature poly-Si TFT
Shengdong Zhang;Chunxiang Zhu;J.K.O. Sin;P.K.T. Mok.
IEEE Electron Device Letters (1999)
A novel ultrathin elevated channel low-temperature poly-Si TFT
Shengdong Zhang;Chunxiang Zhu;J.K.O. Sin;P.K.T. Mok.
IEEE Electron Device Letters (1999)
Solution‐Processed MoS2/Organolead Trihalide Perovskite Photodetectors
Yan Wang;Yan Wang;Raymond Fullon;Muharrem Acerce;Christopher E. Petoukhoff.
Advanced Materials (2017)
Solution‐Processed MoS2/Organolead Trihalide Perovskite Photodetectors
Yan Wang;Yan Wang;Raymond Fullon;Muharrem Acerce;Christopher E. Petoukhoff.
Advanced Materials (2017)
Efficient quantum dot light-emitting diodes with a Zn0.85Mg0.15O interfacial modification layer
Yizhe Sun;Yibin Jiang;Huiren Peng;Jiangliu Wei.
Nanoscale (2017)
Efficient quantum dot light-emitting diodes with a Zn0.85Mg0.15O interfacial modification layer
Yizhe Sun;Yibin Jiang;Huiren Peng;Jiangliu Wei.
Nanoscale (2017)
3-Dimensional Integration for Interconnect Reduction in for Nano-CMOS Technologies
Mansun Chan;Shengdong Zhang;Xinnan Lin;Xusheng Wu.
ieee region 10 conference (2006)
3-Dimensional Integration for Interconnect Reduction in for Nano-CMOS Technologies
Mansun Chan;Shengdong Zhang;Xinnan Lin;Xusheng Wu.
ieee region 10 conference (2006)
Numerical modeling of linear doping profiles for high-voltage thin-film SOI devices
Shengdong Zhang;J.K.O. Sin;T.M.L. Lai;P.K. Ko.
IEEE Transactions on Electron Devices (1999)
Numerical modeling of linear doping profiles for high-voltage thin-film SOI devices
Shengdong Zhang;J.K.O. Sin;T.M.L. Lai;P.K. Ko.
IEEE Transactions on Electron Devices (1999)
If you think any of the details on this page are incorrect, let us know.
We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:
Hong Kong University of Science and Technology
National Sun Yat-sen University
Peking University
Southern University of Science and Technology
Sun Yat-sen University
National Sun Yat-sen University
Peking University
Chinese Academy of Sciences
Peking University
Southern University of Science and Technology
Bar-Ilan University
Purdue University West Lafayette
University of Chicago
Rutgers, The State University of New Jersey
Ghent University
University of Giessen
University of Tasmania
KU Leuven
Grenoble Alpes University
Woods Hole Oceanographic Institution
Norwegian Institute for Air Research
University of Massachusetts Amherst
The Ohio State University
University of British Columbia
University of Kansas
Northwestern University