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D-Index & Metrics

Electronics and Electrical Engineering

D-Index
62
Citations
15527
World Ranking
1439
National Ranking
590

Research.com Recognitions

  • 2000 - IEEE Fellow For contributions to the development, material growth, and understanding of semiconductor quantum-well lasers.

Overview

David P. Bour is a researcher affiliated with Google in the United States, with a focus on physics and engineering disciplines. Their work primarily spans the fields of Physics and Astronomy as well as Engineering, with notable contributions in the subfields of Atomic and Molecular Physics and Optics, Condensed Matter Physics, Electrical and Electronic Engineering, Spectroscopy, and Biomedical Engineering.

The core topics covered in their research include Semiconductor Quantum Structures and Devices, GaN-based semiconductor devices and materials, Spectroscopy and Laser Applications, Advanced Fiber Laser Technologies, Photonic and Optical Devices, Nanowire Synthesis and Applications, and Semiconductor materials and devices.

David P. Bour has published multiple papers primarily in scientific journals such as Crystals, Photonics, Superlattices and Microstructures, and Micromachines. Frequent publication venues for their work include:

  • Crystals
  • Photonics
  • Superlattices and Microstructures
  • Micromachines

Some of their recent publications include:

  • Evidence of strong electron-phonon interaction in a GaN-based quantum cascade emitter, 2020, Superlattices and Microstructures
  • Proposal for Deep-UV Emission from a Near-Infrared AlN/GaN-Based Quantum Cascade Device Using Multiple Photon Up-Conversion, 2023, Crystals
  • Monolithically Integrated Michelson Interferometer Using an InGaAs/InAlAs Quantum Cascade Laser at λ = 4 µm, 2024, Photonics
  • AlGaN-Based 1.55 µm Phototransistor as a Crucial Building Block for Optical Computers, 2021, Crystals
  • Ultra-Short Lifetime of Intersubband Electrons in Resonance to GaN-Based LO-Phonons at 92 meV, 2023, Photonics

Frequent co-authors collaborating with David P. Bour include Daniel Hofstetter, Hans Beck, H. P. Beck, J. E. Epler, and Lutz Kirste.

David P. Bour was recognized as an IEEE Fellow in 2000 for contributions to the development, material growth, and understanding of semiconductor quantum-well lasers.

Best Publications

  • Nitride-based semiconductors for blue and green light-emitting devices

    F. A. Ponce;D. P. Bour

  • Spatial distribution of the luminescence in GaN thin films

    F. A. Ponce;D. P. Bour;W. Götz;P. J. Wright

  • Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off

    W. S. Wong;T. Sands;N. W. Cheung;M. Kneissl

  • Vertical Power p-n Diodes Based on Bulk GaN

    Isik C. Kizilyalli;Andrew P. Edwards;Ozgur Aktas;Thomas Prunty

  • Terabus: Terabit/Second-Class Card-Level Optical Interconnect Technologies

    L. Schares;J.A. Kash;F.E. Doany;C.L. Schow

  • Widely tunable single-mode quantum cascade laser source for mid-infrared spectroscopy

    Benjamin G. Lee;Mikhail A. Belkin;Ross Audet;Ross Audet;Jim MacArthur

  • Widely tunable mode-hop free external cavity quantum cascade lasers for high resolution spectroscopy and chemical sensing

    Gerard Wysocki;R. Lewicki;R. F. Curl;F. K. Tittel

  • High Voltage Vertical GaN p-n Diodes With Avalanche Capability

    Unknown

  • PHASE SEPARATION IN InGaN/GaN MULTIPLE QUANTUM WELLS

    M. D. McCluskey;L. T. Romano;B. S. Krusor;D. P. Bour

  • Multimode regimes in quantum cascade lasers: From coherent instabilities to spatial hole burning

    Ariel Gordon;Christine Y. Wang;L. Diehl;F. X. Kärtner

  • InxGa1−xN light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off

    W. S. Wong;T. Sands;N. W. Cheung;M. Kneissl

  • método para produzir uma estrutura semicondutora de cavidade ressonante à base de nitreto

    Christopher L Chua;David P Bour;Michael A Kneissl

  • Bowtie plasmonic quantum cascade laser antenna

    Nanfang Yu;Ertugrul Cubukcu;Laurent Diehl;David Bour

  • High-power quantum cascade lasers grown by low-pressure metal organic vapor-phase epitaxy operating in continuous wave above 400K

    L. Diehl;D. Bour;S. Corzine;J. Zhu

  • Coherent instabilities in a semiconductor laser with fast gain recovery

    Christine Y. Wang;L. Diehl;A. Gordon;C. Jirauschek

  • Strained Ga/sub x/In/sub 1-x/P/(AlGa)/sub 0.5/In/sub 0.5/P heterostructures and quantum-well laser diodes

    D.P. Bour;R.S. Geels;D.W. Treat;T.L. Paoli

  • Drift leakage current in AlGaInP quantum-well lasers

    D.P. Bour;D.W. Treat;R.L. Thornton;R.S. Geels

  • Multiband GaNAsP quaternary alloys

    K. M. Yu;W. Walukiewicz;J. W. Ager;D. Bour

  • Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition

    F. A. Ponce;D. P. Bour;W. Götz;N. M. Johnson

  • DFB Quantum Cascade Laser Arrays

    B.G. Lee;M.A. Belkin;C. Pflugl;L. Diehl

  • Design and characterization of 1.3-/spl mu/m AlGaInAs-InP multiple-quantum-well lasers

    S.R. Selmic;Tso-Min Chou;Jiehping Sih;J.B. Kirk

  • 1.5-kV and 2.2-m<inline-formula> <tex-math notation="TeX">\(\Omega \) </tex-math></inline-formula>-cm<inline-formula> <tex-math notation="TeX">\(^{2}\) </tex-math></inline-formula> Vertical GaN Transistors on Bulk-GaN Substrates

    Unknown

Frequent Co-Authors

Linda T. Romano
Linda T. Romano Palo Alto Research Center
Michael Kneissl
Michael Kneissl Technical University of Berlin
Scott W. Corzine
Scott W. Corzine Infinera (United States)
Federico Capasso
Federico Capasso Harvard University
N. M. Johnson
N. M. Johnson Palo Alto Research Center
Daniel Hofstetter
Daniel Hofstetter University of Neuchâtel
Fernando Ponce
Fernando Ponce Arizona State University
David F. Welch
David F. Welch Infinera (United States)
Mikhail A. Belkin
Mikhail A. Belkin Technical University of Munich
John E. Northrup
John E. Northrup Palo Alto Research Center

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