World's Best Scientists 2026 revealed!

D-Index & Metrics

Electronics and Electrical Engineering

D-Index
62
Citations
15527
World Ranking
1439
National Ranking
591

David P. Bour publication distribution in Electronics and Electrical Engineering in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Electronics and Electrical Engineering in 2026. The highlighted bar marks where David P. Bour sits on this spectrum.

34–53 publications: 24 scientists 54–73 publications: 52 scientists 74–93 publications: 114 scientists 94–113 publications: 203 scientists 114–133 publications: 269 scientists 134–153 publications: 355 scientists 154–173 publications: 403 scientists 174–193 publications: 445 scientists 194–213 publications: 430 scientists 214–233 publications: 431 scientists 234–253 publications: 399 scientists 254–273 publications: 366 scientists 274–293 publications: 335 scientists 294–313 publications: 300 scientists 314–333 publications: 276 scientists 334–353 publications: 250 scientists 354–373 publications: 214 scientists 374–393 publications: 187 scientists 394–413 publications: 152 scientists 414–433 publications: 169 scientists 434–453 publications: 147 scientists 454–473 publications: 111 scientists 474–493 publications: 117 scientists 494–513 publications: 103 scientists 514–533 publications: 99 scientists 534–553 publications: 92 scientists 554–573 publications: 75 scientists 574–593 publications: 58 scientists 594–613 publications: 69 scientists 614–633 publications: 50 scientists 634–653 publications: 62 scientists 654–673 publications: 54 scientists 674–693 publications: 44 scientists 694–713 publications: 37 scientists 714–733 publications: 28 scientists 734–753 publications: 26 scientists 754–773 publications: 26 scientists 774–793 publications: 19 scientists 794–813 publications: 23 scientists 814–833 publications: 20 scientists 834–853 publications: 16 scientists 854–873 publications: 20 scientists 874–893 publications: 11 scientists 894–913 publications: 11 scientists 914–933 publications: 16 scientists 934–953 publications: 13 scientists 954–973 publications: 10 scientists 974–993 publications: 11 scientists 994–1,013 publications: 9 scientists 1,014–1,033 publications: 9 scientists 1,034–1,053 publications: 10 scientists 1,054–1,064 publications: 6 scientists 1,065+ publications: 99 scientists
34 publications 1,065+

This scientist: 409 publications — 75th percentile

75% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,065 publications or more.

David P. Bour D-index placement in Electronics and Electrical Engineering in 2026

The chart shows the D-index (discipline H-index) distribution of Electronics and Electrical Engineering scientists ranked by Research.com in 2026. The highlighted bar marks where David P. Bour sits on this spectrum.

30 D-Index: 178 scientists 31 D-Index: 257 scientists 32 D-Index: 263 scientists 33 D-Index: 262 scientists 34 D-Index: 244 scientists 35 D-Index: 236 scientists 36 D-Index: 211 scientists 37 D-Index: 220 scientists 38 D-Index: 214 scientists 39 D-Index: 214 scientists 40 D-Index: 205 scientists 41 D-Index: 187 scientists 42 D-Index: 194 scientists 43 D-Index: 201 scientists 44 D-Index: 155 scientists 45 D-Index: 189 scientists 46 D-Index: 148 scientists 47 D-Index: 160 scientists 48 D-Index: 134 scientists 49 D-Index: 130 scientists 50 D-Index: 141 scientists 51 D-Index: 156 scientists 52 D-Index: 108 scientists 53 D-Index: 130 scientists 54 D-Index: 112 scientists 55 D-Index: 97 scientists 56 D-Index: 111 scientists 57 D-Index: 102 scientists 58 D-Index: 108 scientists 59 D-Index: 120 scientists 60 D-Index: 103 scientists 61 D-Index: 93 scientists 62 D-Index: 92 scientists 63 D-Index: 74 scientists 64 D-Index: 77 scientists 65 D-Index: 73 scientists 66 D-Index: 64 scientists 67 D-Index: 69 scientists 68 D-Index: 60 scientists 69 D-Index: 39 scientists 70 D-Index: 57 scientists 71 D-Index: 59 scientists 72 D-Index: 46 scientists 73 D-Index: 49 scientists 74 D-Index: 38 scientists 75 D-Index: 35 scientists 76 D-Index: 32 scientists 77 D-Index: 35 scientists 78 D-Index: 31 scientists 79 D-Index: 22 scientists 80 D-Index: 34 scientists 81 D-Index: 31 scientists 82 D-Index: 34 scientists 83 D-Index: 23 scientists 84 D-Index: 18 scientists 85 D-Index: 30 scientists 86 D-Index: 19 scientists 87 D-Index: 19 scientists 88 D-Index: 20 scientists 89 D-Index: 8 scientists 90 D-Index: 17 scientists 91 D-Index: 7 scientists 92 D-Index: 14 scientists 93 D-Index: 9 scientists 94 D-Index: 15 scientists 95 D-Index: 10 scientists 96 D-Index: 12 scientists 97 D-Index: 10 scientists 98 D-Index: 10 scientists 99 D-Index: 12 scientists 100 D-Index: 16 scientists 101 D-Index: 5 scientists 102 D-Index: 7 scientists 103 D-Index: 7 scientists 104 D-Index: 8 scientists 105 D-Index: 9 scientists 106 D-Index: 13 scientists 107 D-Index: 4 scientists 108 D-Index: 5 scientists 109 D-Index: 10 scientists 110 D-Index: 8 scientists 111+ D-Index: 96 scientists
30 D-Index 111+

This scientist: 62 D-Index — 80th percentile

80% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 111 D-Index or more.

Research.com Recognitions

  • 2000 - IEEE Fellow For contributions to the development, material growth, and understanding of semiconductor quantum-well lasers.

Overview

David P. Bour is a researcher affiliated with Google in the United States, with a focus on physics and engineering disciplines. Their work primarily spans the fields of Physics and Astronomy as well as Engineering, with notable contributions in the subfields of Atomic and Molecular Physics and Optics, Condensed Matter Physics, Electrical and Electronic Engineering, Spectroscopy, and Biomedical Engineering.

The core topics covered in their research include Semiconductor Quantum Structures and Devices, GaN-based semiconductor devices and materials, Spectroscopy and Laser Applications, Advanced Fiber Laser Technologies, Photonic and Optical Devices, Nanowire Synthesis and Applications, and Semiconductor materials and devices.

David P. Bour has published multiple papers primarily in scientific journals such as Crystals, Photonics, Superlattices and Microstructures, and Micromachines. Frequent publication venues for their work include:

  • Crystals
  • Photonics
  • Superlattices and Microstructures
  • Micromachines

Some of their recent publications include:

  • Evidence of strong electron-phonon interaction in a GaN-based quantum cascade emitter, 2020, Superlattices and Microstructures
  • Proposal for Deep-UV Emission from a Near-Infrared AlN/GaN-Based Quantum Cascade Device Using Multiple Photon Up-Conversion, 2023, Crystals
  • Monolithically Integrated Michelson Interferometer Using an InGaAs/InAlAs Quantum Cascade Laser at λ = 4 µm, 2024, Photonics
  • AlGaN-Based 1.55 µm Phototransistor as a Crucial Building Block for Optical Computers, 2021, Crystals
  • Ultra-Short Lifetime of Intersubband Electrons in Resonance to GaN-Based LO-Phonons at 92 meV, 2023, Photonics

Frequent co-authors collaborating with David P. Bour include Daniel Hofstetter, Hans Beck, H. P. Beck, J. E. Epler, and Lutz Kirste.

David P. Bour was recognized as an IEEE Fellow in 2000 for contributions to the development, material growth, and understanding of semiconductor quantum-well lasers.

Best Publications

  • Nitride-based semiconductors for blue and green light-emitting devices

    F. A. Ponce;D. P. Bour

  • Spatial distribution of the luminescence in GaN thin films

    F. A. Ponce;D. P. Bour;W. Götz;P. J. Wright

  • Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off

    W. S. Wong;T. Sands;N. W. Cheung;M. Kneissl

  • Vertical Power p-n Diodes Based on Bulk GaN

    Isik C. Kizilyalli;Andrew P. Edwards;Ozgur Aktas;Thomas Prunty

  • Terabus: Terabit/Second-Class Card-Level Optical Interconnect Technologies

    L. Schares;J.A. Kash;F.E. Doany;C.L. Schow

  • Widely tunable single-mode quantum cascade laser source for mid-infrared spectroscopy

    Benjamin G. Lee;Mikhail A. Belkin;Ross Audet;Ross Audet;Jim MacArthur

  • Widely tunable mode-hop free external cavity quantum cascade lasers for high resolution spectroscopy and chemical sensing

    Gerard Wysocki;R. Lewicki;R. F. Curl;F. K. Tittel

  • High Voltage Vertical GaN p-n Diodes With Avalanche Capability

    Unknown

  • PHASE SEPARATION IN InGaN/GaN MULTIPLE QUANTUM WELLS

    M. D. McCluskey;L. T. Romano;B. S. Krusor;D. P. Bour

  • Multimode regimes in quantum cascade lasers: From coherent instabilities to spatial hole burning

    Ariel Gordon;Christine Y. Wang;L. Diehl;F. X. Kärtner

  • InxGa1−xN light emitting diodes on Si substrates fabricated by Pd–In metal bonding and laser lift-off

    W. S. Wong;T. Sands;N. W. Cheung;M. Kneissl

  • método para produzir uma estrutura semicondutora de cavidade ressonante à base de nitreto

    Christopher L Chua;David P Bour;Michael A Kneissl

  • Bowtie plasmonic quantum cascade laser antenna

    Nanfang Yu;Ertugrul Cubukcu;Laurent Diehl;David Bour

  • High-power quantum cascade lasers grown by low-pressure metal organic vapor-phase epitaxy operating in continuous wave above 400K

    L. Diehl;D. Bour;S. Corzine;J. Zhu

  • Coherent instabilities in a semiconductor laser with fast gain recovery

    Christine Y. Wang;L. Diehl;A. Gordon;C. Jirauschek

  • Strained Ga/sub x/In/sub 1-x/P/(AlGa)/sub 0.5/In/sub 0.5/P heterostructures and quantum-well laser diodes

    D.P. Bour;R.S. Geels;D.W. Treat;T.L. Paoli

  • Drift leakage current in AlGaInP quantum-well lasers

    D.P. Bour;D.W. Treat;R.L. Thornton;R.S. Geels

  • Multiband GaNAsP quaternary alloys

    K. M. Yu;W. Walukiewicz;J. W. Ager;D. Bour

  • Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition

    F. A. Ponce;D. P. Bour;W. Götz;N. M. Johnson

  • DFB Quantum Cascade Laser Arrays

    B.G. Lee;M.A. Belkin;C. Pflugl;L. Diehl

  • Design and characterization of 1.3-/spl mu/m AlGaInAs-InP multiple-quantum-well lasers

    S.R. Selmic;Tso-Min Chou;Jiehping Sih;J.B. Kirk

  • 1.5-kV and 2.2-m<inline-formula> <tex-math notation="TeX">\(\Omega \) </tex-math></inline-formula>-cm<inline-formula> <tex-math notation="TeX">\(^{2}\) </tex-math></inline-formula> Vertical GaN Transistors on Bulk-GaN Substrates

    Unknown

Frequent Co-Authors

Linda T. Romano
Linda T. Romano Palo Alto Research Center
Michael Kneissl
Michael Kneissl Technical University of Berlin
Scott W. Corzine
Scott W. Corzine Infinera (United States)
Federico Capasso
Federico Capasso Harvard University
N. M. Johnson
N. M. Johnson Palo Alto Research Center
Daniel Hofstetter
Daniel Hofstetter University of Neuchâtel
Fernando Ponce
Fernando Ponce Arizona State University
David F. Welch
David F. Welch Infinera (United States)
Mikhail A. Belkin
Mikhail A. Belkin Technical University of Munich
John E. Northrup
John E. Northrup Palo Alto Research Center

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