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N. M. Johnson

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 43 12262 11858 2821 2621 157 8157

N. M. Johnson publications per year

The chart shows the history of publications by N. M. Johnson between 1974 and 2024, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. N. M. Johnson published across 51 years, from 1974 to 2024, averaging 3.7 papers a year. Output peaked at 13 publications in 1995. 2 of the 187 publications appeared in the last two years.

No. of publications
5 10
Bar chart. Horizontal axis: year, 1974 to 2024. Vertical axis: number of publications, 0 to 13. Peak 13 publications in 1995. 1974: 2 publications 1975: 0 publications 1976: 1 publication 1977: 1 publication 1978: 1 publication 1979: 9 publications 1980: 5 publications 1981: 10 publications 1982: 10 publications 1983: 4 publications 1984: 7 publications 1985: 10 publications 1986: 7 publications 1987: 7 publications 1988: 4 publications 1989: 4 publications 1990: 1 publication 1991: 11 publications 1992: 9 publications 1993: 9 publications 1994: 8 publications 1995: 13 publications 1996: 6 publications 1997: 4 publications 1998: 2 publications 1999: 8 publications 2000: 4 publications 2001: 4 publications 2002: 1 publication 2003: 0 publications 2004: 0 publications 2005: 1 publication 2006: 2 publications 2007: 0 publications 2008: 2 publications 2009: 1 publication 2010: 0 publications 2011: 0 publications 2012: 2 publications 2013: 0 publications 2014: 1 publication 2015: 0 publications 2016: 2 publications 2017: 0 publications 2018: 2 publications 2019: 1 publication 2020: 3 publications 2021: 2 publications 2022: 4 publications 2023: 1 publication 2024: 1 publication
1974 2024

187 publications in total across all disciplines

View publications per year as a table
N. M. Johnson: publications per year, 1974 to 2024
Year Publications
1974 2
1975 0
1976 1
1977 1
1978 1
1979 9
1980 5
1981 10
1982 10
1983 4
1984 7
1985 10
1986 7
1987 7
1988 4
1989 4
1990 1
1991 11
1992 9
1993 9
1994 8
1995 13
1996 6
1997 4
1998 2
1999 8
2000 4
2001 4
2002 1
2003 0
2004 0
2005 1
2006 2
2007 0
2008 2
2009 1
2010 0
2011 0
2012 2
2013 0
2014 1
2015 0
2016 2
2017 0
2018 2
2019 1
2020 3
2021 2
2022 4
2023 1
2024 1
Total 187
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N. M. Johnson publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where N. M. Johnson sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 150–169 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 157 publications — 16th percentile

16% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835 157
170–189 850
190–209 891
210–229 862
230–249 766
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
Download as CSV

N. M. Johnson D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where N. M. Johnson sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 42–43 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 43 D-Index — 5th percentile

5% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450 43
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Overview

N. M. Johnson is a researcher affiliated with the Palo Alto Research Center in the United States, with a research focus spanning biochemistry, genetics, molecular biology, and medicine. Their work encompasses multiple subfields including molecular biology, physiology, epidemiology, oncology, and sensory systems. The primary areas of investigation include epigenetics and DNA methylation, autophagy in disease and therapy, telomeres, telomerase and senescence, renal and related cancers, pluripotent stem cell research, dietary effects on health, and cancer cells and metastasis.

Johnson has contributed to research published in several notable academic venues. Frequent publication platforms include:

  • bioRxiv (Cold Spring Harbor Laboratory)
  • Cellular and Molecular Gastroenterology and Hepatology
  • Science Immunology
  • EMBO Reports
  • Developmental Cell

Recent significant papers authored or coauthored by Johnson include:

  • "Activation of TRPA1 nociceptor promotes systemic adult mammalian skin regeneration," 2020, Science Immunology
  • "Autophagic state prospectively identifies facultative stem cells in the intestinal epithelium," 2022, EMBO Reports
  • "MTORC1 and the Rebirth of Stemness," 2020, Developmental Cell
  • "Patient-Induced Pluripotent Stem Cell-Derived Hepatostellate Organoids Establish a Basis for Liver Pathologies in Telomeropathies," 2023, Cellular and Molecular Gastroenterology and Hepatology
  • "High autophagic vesicle content marks facultative stem cells of the gut," 2023, Autophagy

Frequent collaborators in Johnson's research include Christopher J. Lengner, Zvi Cramer, Yuhua Tian, Louis R. Parham, and Stephanie Adams-Tzivelekidis. These coauthors have worked with Johnson on multiple projects across their respective shared fields.

The research profile of Johnson indicates a strong emphasis on cellular processes related to stem cells and autophagy, as well as the molecular underpinnings of aging and cancer. The range of publication venues reflects interdisciplinary engagement spanning immunology, developmental biology, and gastroenterology.

Best Publications

  • Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

    J. Y. Tsao;S. Chowdhury;M. A. Hollis;D. Jena

  • Advances in group III-nitride-based deep UV light-emitting diode technology

    M Kneissl;M Kneissl;T Kolbe;C Chua;V Kueller

  • Hydrogen interactions with defects in crystalline solids

    S. M. Myers;M. I. Baskes;H. K. Birnbaum;J. W. Corbett

  • Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition

    W. Götz;N. M. Johnson;J. Walker;D. P. Bour

  • Defects in single-crystal silicon induced by hydrogenation

    N. M. P Johnson;F. A. Ponce;R. A. Street;R. J. Nemanich

  • ACTIVATION ENERGIES OF SI DONORS IN GAN

    W. Götz;N. M. Johnson;C. Chen;H. Liu

  • Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off

    W. S. Wong;T. Sands;N. W. Cheung;M. Kneissl

  • Electronic traps and Pb centers at the Si/SiO2 interface: Band‐gap energy distribution

    Edward H. Poindexter;G. J. Gerardi;M.‐E. Rueckel;Philip J. Caplan

  • Interface traps and Pb centers in oxidized (100) silicon wafers

    Gary J. Gerardi;Edward H. Poindexter;Philip J. Caplan;Noble M. Johnson

  • Interstitial hydrogen and neutralization of shallow-donor impurities in single-crystal silicon.

    N. M. Johnson;C. Herring;D. J. Chadi

  • Self‐limiting oxidation for fabricating sub‐5 nm silicon nanowires

    H. I. Liu;D. K. Biegelsen;F. A. Ponce;N. M. Johnson

  • The localization and crystallographic dependence of Si suboxide species at the SiO2/Si interface

    P. J. Grunthaner;M. H. Hecht;F. J. Grunthaner;N. M. Johnson

  • Growth of gallium nitride by hydride vapor-phase epitaxy

    R.J. Molnar;W. Götz;L.T. Romano;N.M. Johnson

  • Unidirectional lasing from InGaN multiple-quantum-well spiral-shaped micropillars

    G. D. Chern;Hakan Engin Tureci;A. Douglas Stone;R. K. Chang

  • Deuterium passivation of grain-boundary dangling bonds in silicon thin films

    N. M. Johnson;D. K. Biegelsen;M. D. Moyer

  • Density of gap states of silicon grain boundaries determined by optical absorption

    Warren B. Jackson;N. M. Johnson;D. K. Biegelsen

  • LARGE BAND GAP BOWING OF INXGA1-XN ALLOYS

    M. D. McCluskey;C. G. Van de Walle;C. P. Master;L. T. Romano

  • Energy levels of isolated interstitial hydrogen in silicon

    Conyers Herring;N. M. Johnson;Chris G. Van de Walle

  • Deep level defects in n‐type GaN

    W. Götz;N. M. Johnson;H. Amano;I. Akasaki

  • PHASE SEPARATION IN InGaN/GaN MULTIPLE QUANTUM WELLS

    M. D. McCluskey;L. T. Romano;B. S. Krusor;D. P. Bour

  • Characteristic electronic defects at the Si‐SiO2 interface

    N. M. Johnson;D. K. Biegelsen;M. D. Moyer;S. T. Chang

  • Mechanism for hydrogen compensation of shallow-acceptor impurities in single-crystal silicon

    Unknown

  • Self‐limiting oxidation of Si nanowires

    H. I. Liu;D. K. Biegelsen;N. M. Johnson;F. A. Ponce

  • Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells

    J. E. Northrup;C. L. Chua;Z. Yang;T. Wunderer

  • Hydrogen passivation of grain boundary defects in polycrystalline silicon thin films

    N. H. Nickel;N. M. Johnson;W. B. Jackson

  • Light-enhanced hydrogen motion in a-Si:H.

    PV Santos;NM Johnson;RA Street

  • Laser‐induced crystallization of silicon islands on amorphous substrates: Multilayer structures

    D. K. Biegelsen;N. M. Johnson;D. J. Bartelink;M. D. Moyer

  • Photoemission capacitance transient spectroscopy of n‐type GaN

    W. Götz;N. M. Johnson;R. A. Street;H. Amano

  • Constant-capacitance DLTS measurement of defect-density profiles in semiconductors

    N. M. Johnson;D. J. Bartelink;R. B. Gold;J. F. Gibbons

  • Measurement of semiconductor–insulator interface states by constant‐capacitance deep‐level transient spectroscopy

    Unknown

  • Inverted order of acceptor and donor levels of monatomic hydrogen in silicon.

    N. M. Johnson;C. Herring;Chris G. van de Walle

  • Absence of oxygen diffusion during hydrogen passivation of shallow‐acceptor impurities in single‐crystal silicon

    Unknown

Frequent Co-Authors

James A. Walker
James A. Walker Harvard University
Michael Kneissl
Michael Kneissl Technical University of Berlin
David P. Bour
David P. Bour Google (United States)
Linda T. Romano
Linda T. Romano Palo Alto Research Center
Robert A. Street
Robert A. Street Palo Alto Research Center
Warren B. Jackson
Warren B. Jackson Palo Alto Research Center
David K. Biegelsen
David K. Biegelsen Palo Alto Research Center
Chris G. Van de Walle
Chris G. Van de Walle University of California, Santa Barbara
Richard J. Molnar
Richard J. Molnar MIT
John E. Northrup
John E. Northrup Palo Alto Research Center

External Links

Personal website of N. M. Johnson

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Best Scientists Citing N. M. Johnson

Michael Kneissl

Michael Kneissl

Technical University of Berlin

Publications: 98

Stephen J. Pearton

Stephen J. Pearton

University of Florida

Publications: 72

Steven P. DenBaars

Steven P. DenBaars

University of California, Santa Barbara

Publications: 67

James S. Speck

James S. Speck

University of California, Santa Barbara

Publications: 55

Hiroshi Amano

Hiroshi Amano

Nagoya University

Publications: 49

Zlatko Sitar

Zlatko Sitar

North Carolina State University

Publications: 45

Richard J. Molnar

Richard J. Molnar

MIT

Publications: 43

Markus Weyers

Markus Weyers

Ferdinand-Braun-Institut

Publications: 43

Bo Monemar

Bo Monemar

Linköping University

Publications: 42

Ramon Collazo

Ramon Collazo

North Carolina State University

Publications: 41

isamu akasaki

isamu akasaki

Meijo University

Publications: 40

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Shuji Nakamura

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Publications: 39

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Chris G. Van de Walle

University of California, Santa Barbara

Publications: 38

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Martin Stutzmann

Technical University of Munich

Publications: 37

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Fan Ren

University of Florida

Publications: 36

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