World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
43
Citations
8157
World Ranking
12262
National Ranking
2821

N. M. Johnson publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where N. M. Johnson sits on this spectrum.

50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50 publications 1,163+

This scientist: 157 publications — 16th percentile

16% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

N. M. Johnson D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where N. M. Johnson sits on this spectrum.

40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40 D-Index 165+

This scientist: 43 D-Index — 5th percentile

5% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

Overview

N. M. Johnson is a researcher affiliated with the Palo Alto Research Center in the United States, with a research focus spanning biochemistry, genetics, molecular biology, and medicine. Their work encompasses multiple subfields including molecular biology, physiology, epidemiology, oncology, and sensory systems. The primary areas of investigation include epigenetics and DNA methylation, autophagy in disease and therapy, telomeres, telomerase and senescence, renal and related cancers, pluripotent stem cell research, dietary effects on health, and cancer cells and metastasis.

Johnson has contributed to research published in several notable academic venues. Frequent publication platforms include:

  • bioRxiv (Cold Spring Harbor Laboratory)
  • Cellular and Molecular Gastroenterology and Hepatology
  • Science Immunology
  • EMBO Reports
  • Developmental Cell

Recent significant papers authored or coauthored by Johnson include:

  • "Activation of TRPA1 nociceptor promotes systemic adult mammalian skin regeneration," 2020, Science Immunology
  • "Autophagic state prospectively identifies facultative stem cells in the intestinal epithelium," 2022, EMBO Reports
  • "MTORC1 and the Rebirth of Stemness," 2020, Developmental Cell
  • "Patient-Induced Pluripotent Stem Cell-Derived Hepatostellate Organoids Establish a Basis for Liver Pathologies in Telomeropathies," 2023, Cellular and Molecular Gastroenterology and Hepatology
  • "High autophagic vesicle content marks facultative stem cells of the gut," 2023, Autophagy

Frequent collaborators in Johnson's research include Christopher J. Lengner, Zvi Cramer, Yuhua Tian, Louis R. Parham, and Stephanie Adams-Tzivelekidis. These coauthors have worked with Johnson on multiple projects across their respective shared fields.

The research profile of Johnson indicates a strong emphasis on cellular processes related to stem cells and autophagy, as well as the molecular underpinnings of aging and cancer. The range of publication venues reflects interdisciplinary engagement spanning immunology, developmental biology, and gastroenterology.

Best Publications

  • Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

    J. Y. Tsao;S. Chowdhury;M. A. Hollis;D. Jena

  • Advances in group III-nitride-based deep UV light-emitting diode technology

    M Kneissl;M Kneissl;T Kolbe;C Chua;V Kueller

  • Hydrogen interactions with defects in crystalline solids

    S. M. Myers;M. I. Baskes;H. K. Birnbaum;J. W. Corbett

  • Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition

    W. Götz;N. M. Johnson;J. Walker;D. P. Bour

  • Defects in single-crystal silicon induced by hydrogenation

    N. M. P Johnson;F. A. Ponce;R. A. Street;R. J. Nemanich

  • ACTIVATION ENERGIES OF SI DONORS IN GAN

    W. Götz;N. M. Johnson;C. Chen;H. Liu

  • Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off

    W. S. Wong;T. Sands;N. W. Cheung;M. Kneissl

  • Electronic traps and Pb centers at the Si/SiO2 interface: Band‐gap energy distribution

    Edward H. Poindexter;G. J. Gerardi;M.‐E. Rueckel;Philip J. Caplan

  • Interface traps and Pb centers in oxidized (100) silicon wafers

    Gary J. Gerardi;Edward H. Poindexter;Philip J. Caplan;Noble M. Johnson

  • Interstitial hydrogen and neutralization of shallow-donor impurities in single-crystal silicon.

    N. M. Johnson;C. Herring;D. J. Chadi

  • Self‐limiting oxidation for fabricating sub‐5 nm silicon nanowires

    H. I. Liu;D. K. Biegelsen;F. A. Ponce;N. M. Johnson

  • The localization and crystallographic dependence of Si suboxide species at the SiO2/Si interface

    P. J. Grunthaner;M. H. Hecht;F. J. Grunthaner;N. M. Johnson

  • Growth of gallium nitride by hydride vapor-phase epitaxy

    R.J. Molnar;W. Götz;L.T. Romano;N.M. Johnson

  • Unidirectional lasing from InGaN multiple-quantum-well spiral-shaped micropillars

    G. D. Chern;Hakan Engin Tureci;A. Douglas Stone;R. K. Chang

  • Deuterium passivation of grain-boundary dangling bonds in silicon thin films

    N. M. Johnson;D. K. Biegelsen;M. D. Moyer

  • Density of gap states of silicon grain boundaries determined by optical absorption

    Warren B. Jackson;N. M. Johnson;D. K. Biegelsen

  • LARGE BAND GAP BOWING OF INXGA1-XN ALLOYS

    M. D. McCluskey;C. G. Van de Walle;C. P. Master;L. T. Romano

  • Energy levels of isolated interstitial hydrogen in silicon

    Conyers Herring;N. M. Johnson;Chris G. Van de Walle

  • Deep level defects in n‐type GaN

    W. Götz;N. M. Johnson;H. Amano;I. Akasaki

  • PHASE SEPARATION IN InGaN/GaN MULTIPLE QUANTUM WELLS

    M. D. McCluskey;L. T. Romano;B. S. Krusor;D. P. Bour

  • Characteristic electronic defects at the Si‐SiO2 interface

    N. M. Johnson;D. K. Biegelsen;M. D. Moyer;S. T. Chang

  • Mechanism for hydrogen compensation of shallow-acceptor impurities in single-crystal silicon

    Unknown

  • Self‐limiting oxidation of Si nanowires

    H. I. Liu;D. K. Biegelsen;N. M. Johnson;F. A. Ponce

  • Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells

    J. E. Northrup;C. L. Chua;Z. Yang;T. Wunderer

  • Hydrogen passivation of grain boundary defects in polycrystalline silicon thin films

    N. H. Nickel;N. M. Johnson;W. B. Jackson

  • Light-enhanced hydrogen motion in a-Si:H.

    PV Santos;NM Johnson;RA Street

  • Laser‐induced crystallization of silicon islands on amorphous substrates: Multilayer structures

    D. K. Biegelsen;N. M. Johnson;D. J. Bartelink;M. D. Moyer

  • Photoemission capacitance transient spectroscopy of n‐type GaN

    W. Götz;N. M. Johnson;R. A. Street;H. Amano

  • Constant-capacitance DLTS measurement of defect-density profiles in semiconductors

    N. M. Johnson;D. J. Bartelink;R. B. Gold;J. F. Gibbons

  • Measurement of semiconductor–insulator interface states by constant‐capacitance deep‐level transient spectroscopy

    Unknown

  • Inverted order of acceptor and donor levels of monatomic hydrogen in silicon.

    N. M. Johnson;C. Herring;Chris G. van de Walle

  • Absence of oxygen diffusion during hydrogen passivation of shallow‐acceptor impurities in single‐crystal silicon

    Unknown

Frequent Co-Authors

James A. Walker
James A. Walker Harvard University
Michael Kneissl
Michael Kneissl Technical University of Berlin
David P. Bour
David P. Bour Google (United States)
Linda T. Romano
Linda T. Romano Palo Alto Research Center
Robert A. Street
Robert A. Street Palo Alto Research Center
Warren B. Jackson
Warren B. Jackson Palo Alto Research Center
David K. Biegelsen
David K. Biegelsen Palo Alto Research Center
Chris G. Van de Walle
Chris G. Van de Walle University of California, Santa Barbara
John E. Northrup
John E. Northrup Palo Alto Research Center

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