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Materials Science

D-Index
43
Citations
8157
World Ranking
12265
National Ranking
2824

Overview

N. M. Johnson is a researcher affiliated with the Palo Alto Research Center in the United States, with a research focus spanning biochemistry, genetics, molecular biology, and medicine. Their work encompasses multiple subfields including molecular biology, physiology, epidemiology, oncology, and sensory systems. The primary areas of investigation include epigenetics and DNA methylation, autophagy in disease and therapy, telomeres, telomerase and senescence, renal and related cancers, pluripotent stem cell research, dietary effects on health, and cancer cells and metastasis.

Johnson has contributed to research published in several notable academic venues. Frequent publication platforms include:

  • bioRxiv (Cold Spring Harbor Laboratory)
  • Cellular and Molecular Gastroenterology and Hepatology
  • Science Immunology
  • EMBO Reports
  • Developmental Cell

Recent significant papers authored or coauthored by Johnson include:

  • "Activation of TRPA1 nociceptor promotes systemic adult mammalian skin regeneration," 2020, Science Immunology
  • "Autophagic state prospectively identifies facultative stem cells in the intestinal epithelium," 2022, EMBO Reports
  • "MTORC1 and the Rebirth of Stemness," 2020, Developmental Cell
  • "Patient-Induced Pluripotent Stem Cell-Derived Hepatostellate Organoids Establish a Basis for Liver Pathologies in Telomeropathies," 2023, Cellular and Molecular Gastroenterology and Hepatology
  • "High autophagic vesicle content marks facultative stem cells of the gut," 2023, Autophagy

Frequent collaborators in Johnson's research include Christopher J. Lengner, Zvi Cramer, Yuhua Tian, Louis R. Parham, and Stephanie Adams-Tzivelekidis. These coauthors have worked with Johnson on multiple projects across their respective shared fields.

The research profile of Johnson indicates a strong emphasis on cellular processes related to stem cells and autophagy, as well as the molecular underpinnings of aging and cancer. The range of publication venues reflects interdisciplinary engagement spanning immunology, developmental biology, and gastroenterology.

Best Publications

  • Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

    J. Y. Tsao;S. Chowdhury;M. A. Hollis;D. Jena

  • Advances in group III-nitride-based deep UV light-emitting diode technology

    M Kneissl;M Kneissl;T Kolbe;C Chua;V Kueller

  • Hydrogen interactions with defects in crystalline solids

    S. M. Myers;M. I. Baskes;H. K. Birnbaum;J. W. Corbett

  • Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition

    W. Götz;N. M. Johnson;J. Walker;D. P. Bour

  • Defects in single-crystal silicon induced by hydrogenation

    N. M. P Johnson;F. A. Ponce;R. A. Street;R. J. Nemanich

  • ACTIVATION ENERGIES OF SI DONORS IN GAN

    W. Götz;N. M. Johnson;C. Chen;H. Liu

  • Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off

    W. S. Wong;T. Sands;N. W. Cheung;M. Kneissl

  • Electronic traps and Pb centers at the Si/SiO2 interface: Band‐gap energy distribution

    Edward H. Poindexter;G. J. Gerardi;M.‐E. Rueckel;Philip J. Caplan

  • Interface traps and Pb centers in oxidized (100) silicon wafers

    Gary J. Gerardi;Edward H. Poindexter;Philip J. Caplan;Noble M. Johnson

  • Interstitial hydrogen and neutralization of shallow-donor impurities in single-crystal silicon.

    N. M. Johnson;C. Herring;D. J. Chadi

  • Self‐limiting oxidation for fabricating sub‐5 nm silicon nanowires

    H. I. Liu;D. K. Biegelsen;F. A. Ponce;N. M. Johnson

  • The localization and crystallographic dependence of Si suboxide species at the SiO2/Si interface

    P. J. Grunthaner;M. H. Hecht;F. J. Grunthaner;N. M. Johnson

  • Growth of gallium nitride by hydride vapor-phase epitaxy

    R.J. Molnar;W. Götz;L.T. Romano;N.M. Johnson

  • Unidirectional lasing from InGaN multiple-quantum-well spiral-shaped micropillars

    G. D. Chern;Hakan Engin Tureci;A. Douglas Stone;R. K. Chang

  • Deuterium passivation of grain-boundary dangling bonds in silicon thin films

    N. M. Johnson;D. K. Biegelsen;M. D. Moyer

  • Density of gap states of silicon grain boundaries determined by optical absorption

    Warren B. Jackson;N. M. Johnson;D. K. Biegelsen

  • LARGE BAND GAP BOWING OF INXGA1-XN ALLOYS

    M. D. McCluskey;C. G. Van de Walle;C. P. Master;L. T. Romano

  • Energy levels of isolated interstitial hydrogen in silicon

    Conyers Herring;N. M. Johnson;Chris G. Van de Walle

  • Deep level defects in n‐type GaN

    W. Götz;N. M. Johnson;H. Amano;I. Akasaki

  • PHASE SEPARATION IN InGaN/GaN MULTIPLE QUANTUM WELLS

    M. D. McCluskey;L. T. Romano;B. S. Krusor;D. P. Bour

  • Characteristic electronic defects at the Si‐SiO2 interface

    N. M. Johnson;D. K. Biegelsen;M. D. Moyer;S. T. Chang

  • Mechanism for hydrogen compensation of shallow-acceptor impurities in single-crystal silicon

    Unknown

  • Self‐limiting oxidation of Si nanowires

    H. I. Liu;D. K. Biegelsen;N. M. Johnson;F. A. Ponce

  • Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells

    J. E. Northrup;C. L. Chua;Z. Yang;T. Wunderer

  • Hydrogen passivation of grain boundary defects in polycrystalline silicon thin films

    N. H. Nickel;N. M. Johnson;W. B. Jackson

  • Light-enhanced hydrogen motion in a-Si:H.

    PV Santos;NM Johnson;RA Street

  • Laser‐induced crystallization of silicon islands on amorphous substrates: Multilayer structures

    D. K. Biegelsen;N. M. Johnson;D. J. Bartelink;M. D. Moyer

  • Photoemission capacitance transient spectroscopy of n‐type GaN

    W. Götz;N. M. Johnson;R. A. Street;H. Amano

  • Constant-capacitance DLTS measurement of defect-density profiles in semiconductors

    N. M. Johnson;D. J. Bartelink;R. B. Gold;J. F. Gibbons

  • Measurement of semiconductor–insulator interface states by constant‐capacitance deep‐level transient spectroscopy

    Unknown

  • Inverted order of acceptor and donor levels of monatomic hydrogen in silicon.

    N. M. Johnson;C. Herring;Chris G. van de Walle

  • Absence of oxygen diffusion during hydrogen passivation of shallow‐acceptor impurities in single‐crystal silicon

    Unknown

Frequent Co-Authors

James A. Walker
James A. Walker Harvard University
Michael Kneissl
Michael Kneissl Technical University of Berlin
David P. Bour
David P. Bour Google (United States)
Linda T. Romano
Linda T. Romano Palo Alto Research Center
Robert A. Street
Robert A. Street Palo Alto Research Center
Warren B. Jackson
Warren B. Jackson Palo Alto Research Center
David K. Biegelsen
David K. Biegelsen Palo Alto Research Center
Chris G. Van de Walle
Chris G. Van de Walle University of California, Santa Barbara
John E. Northrup
John E. Northrup Palo Alto Research Center

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