D-Index & Metrics Best Publications

D-Index & Metrics D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines.

Discipline name D-index D-index (Discipline H-index) only includes papers and citation values for an examined discipline in contrast to General H-index which accounts for publications across all disciplines. Citations Publications World Ranking National Ranking
Materials Science D-index 52 Citations 14,123 165 World Ranking 5140 National Ranking 1444

Research.com Recognitions

Awards & Achievements

1995 - Fellow of American Physical Society (APS) Citation For pioneering research in the fundamental properties of amorphous semiconductors, including seminal studies of the intrinsic electronic density of states and metastable mechanisms and processes, and for the application of photothermal deflection spectroscopy to address a wide range of problems in hydrogenated amorphous silicon

Overview

What is he best known for?

The fields of study he is best known for:

  • Electron
  • Semiconductor
  • Artificial intelligence

Warren B. Jackson mainly investigates Optoelectronics, Amorphous silicon, Dangling bond, Silicon and Doping. His Optoelectronics study integrates concerns from other disciplines, such as Photothermal therapy, Optics and Conductive polymer. His research in the fields of Nanocrystalline silicon overlaps with other disciplines such as Metastability and Impurity.

His Dangling bond research includes elements of Crystallographic defect, Electron mobility, Condensed matter physics and Passivation. Warren B. Jackson has researched Silicon in several fields, including Staebler–Wronski effect, Band gap, Atomic physics and Photoconductivity. Warren B. Jackson combines subjects such as Fermi level, Chemical engineering, Silanes and Analytical chemistry with his study of Doping.

His most cited work include:

  • PHOTOTHERMAL DEFLECTION SPECTROSCOPY AND DETECTION (1110 citations)
  • Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study. (954 citations)
  • A polymer/semiconductor write-once read-many-times memory (643 citations)

What are the main themes of his work throughout his whole career to date?

His primary scientific interests are in Optoelectronics, Amorphous silicon, Silicon, Metastability and Analytical chemistry. His Optoelectronics research incorporates themes from Layer, Electrode, Thin-film transistor and Transistor, Voltage. His research in Transistor tackles topics such as Lithography which are related to areas like Nanotechnology.

His research integrates issues of Molecular physics, Annealing, Condensed matter physics and Dangling bond in his study of Amorphous silicon. His research in Dangling bond intersects with topics in Staebler–Wronski effect, Electron paramagnetic resonance, Doping and Atomic physics. His work deals with themes such as Chemical vapor deposition, Amorphous solid, Thin film, Mineralogy and Density of states, which intersect with Silicon.

He most often published in these fields:

  • Optoelectronics (25.00%)
  • Amorphous silicon (24.31%)
  • Silicon (17.01%)

What were the highlights of his more recent work (between 2007-2021)?

  • Optoelectronics (25.00%)
  • Transistor (5.90%)
  • Lithography (4.51%)

In recent papers he was focusing on the following fields of study:

His main research concerns Optoelectronics, Transistor, Lithography, Artificial intelligence and Roll-to-roll processing. Warren B. Jackson has included themes like Memristor, Electrode, Thin-film transistor, Amorphous solid and Communication channel in his Optoelectronics study. While working in this field, he studies both Transistor and Metastability.

The various areas that Warren B. Jackson examines in his Lithography study include X-ray lithography and Electronics. His studies in Silicon integrate themes in fields like Amorphous silicon, Work, Density of states and Hydrogen bond. His study in Amorphous silicon is interdisciplinary in nature, drawing from both Semimetal, Doping, Chemical physics and Antibonding molecular orbital.

Between 2007 and 2021, his most popular works were:

  • An accurate locally active memristor model for S-type negative differential resistance in NbOx (93 citations)
  • Trilayer Tunnel Selectors for Memristor Memory Cells (66 citations)
  • Roll‐to‐roll manufacturing of electronics on flexible substrates using self‐aligned imprint lithography (SAIL) (48 citations)

In his most recent research, the most cited papers focused on:

  • Electron
  • Semiconductor
  • Artificial intelligence

His scientific interests lie mostly in Transistor, Optoelectronics, Nanotechnology, Lithography and Roll-to-roll processing. The study incorporates disciplines such as Thin-film transistor, Annealing, Passivation, Semiconductor and Vacancy defect in addition to Transistor. His Optoelectronics research is multidisciplinary, incorporating perspectives in Voltage, Electronic engineering and Nonlinear system.

His Nonlinear system study integrates concerns from other disciplines, such as Silicon, Quantum tunnelling, Resistive random-access memory and Memory cell. As a part of the same scientific study, Warren B. Jackson usually deals with the Nanotechnology, concentrating on Memristor and frequently concerns with Electrode, Leakage, Poole–Frenkel effect, Crossbar switch and Electric potential. His study looks at the relationship between Lithography and topics such as Backplane, which overlap with Substrate, Flexible electronics, Mechanical engineering and Electronics.

This overview was generated by a machine learning system which analysed the scientist’s body of work. If you have any feedback, you can contact us here.

Best Publications

PHOTOTHERMAL DEFLECTION SPECTROSCOPY AND DETECTION

Warren B. Jackson;Nabil M. Amer;A. C. Boccara;D. Fournier.
Applied Optics (1981)

1689 Citations

Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study.

M. Stutzmann;W. B. Jackson;C. C. Tsai.
Physical Review B (1985)

1515 Citations

A polymer/semiconductor write-once read-many-times memory

Sven Möller;Craig Perlov;Warren Jackson;Carl Taussig.
Nature (2003)

963 Citations

DIRECT MEASUREMENT OF GAP STATE ABSORPTION IN HYDROGENATED AMORPHOUS SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY

Warren B. Jackson;Nabil M. Amer.
Physical Review B (1982)

762 Citations

Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon.

J. Kakalios;R. A. Street;W. B. Jackson.
Physical Review Letters (1987)

663 Citations

Piezoelectric photoacoustic detection: Theory and experiment

Warren Jackson;Nabil M. Amer.
Journal of Applied Physics (1980)

459 Citations

Sensitive photothermal deflection technique for measuring absorption in optically thin media

A. C. Boccara;D. Fournier;Warren B. Jackson;Nabil M. Amer.
Optics Letters (1980)

433 Citations

Energy dependence of the optical matrix element in hydrogenated amorphous and crystalline silicon.

W. B. Jackson;S. M. Kelso;C. C. Tsai;J. W. Allen.
Physical Review B (1985)

379 Citations

High-performance flexible zinc tin oxide field-effect transistors

W. B. Jackson;R. L. Hoffman;G. S. Herman.
Applied Physics Letters (2005)

314 Citations

Hydrogen diffusion in amorphous silicon

R. A. Street;C. C. Tsai;James Kakalios;W. B. Jackson.
Philosophical Magazine B-physics of Condensed Matter Statistical Mechanics Electronic Optical and Magnetic Properties (1987)

309 Citations

If you think any of the details on this page are incorrect, let us know.

Contact us

Best Scientists Citing Warren B. Jackson

Sigurd Wagner

Sigurd Wagner

Princeton University

Publications: 57

Martin Stutzmann

Martin Stutzmann

Technical University of Munich

Publications: 54

P. Roca i Cabarrocas

P. Roca i Cabarrocas

École Polytechnique

Publications: 47

Robert A. Street

Robert A. Street

Palo Alto Research Center

Publications: 40

Dureseti Chidambarrao

Dureseti Chidambarrao

IBM (United States)

Publications: 36

Wei Huang

Wei Huang

Nanjing Tech University

Publications: 35

Ibrahim A. Abbas

Ibrahim A. Abbas

Sohag University

Publications: 32

Howard M. Branz

Howard M. Branz

University of Colorado Boulder

Publications: 29

Jerzy Kanicki

Jerzy Kanicki

University of Michigan–Ann Arbor

Publications: 29

John Robertson

John Robertson

University of Cambridge

Publications: 29

Jianmei Lu

Jianmei Lu

Soochow University

Publications: 28

En-Tang Kang

En-Tang Kang

National University of Singapore

Publications: 28

Chunxiang Zhu

Chunxiang Zhu

National University of Singapore

Publications: 27

Akihisa Matsuda

Akihisa Matsuda

National Institute of Advanced Industrial Science and Technology

Publications: 27

Qingfeng Xu

Qingfeng Xu

Soochow University

Publications: 25

Hua Li

Hua Li

Soochow University

Publications: 25

Trending Scientists

Laurence Calzone

Laurence Calzone

PSL University

Luigi Fabbrizzi

Luigi Fabbrizzi

University of Pavia

Peter Grutter

Peter Grutter

McGill University

Zhengqin Xiong

Zhengqin Xiong

Nanjing Agricultural University

John B. Imboden

John B. Imboden

University of California, San Francisco

Paul A. Rosen

Paul A. Rosen

California Institute of Technology

Sergio Barbieri

Sergio Barbieri

Fondazione IRCCS Ca' Granda Ospedale Maggiore Policlinico

Kees P.J. Braun

Kees P.J. Braun

Utrecht University

Giuseppe Sartori

Giuseppe Sartori

University of Padua

Melinda A. Stanley

Melinda A. Stanley

Baylor College of Medicine

Richard Freeman

Richard Freeman

Tufts University

Karl Y. Bilimoria

Karl Y. Bilimoria

Northwestern University

Joseph E. Parisi

Joseph E. Parisi

Mayo Clinic

Mary Lee Vance

Mary Lee Vance

University of Virginia

Joseph M. Zmuda

Joseph M. Zmuda

University of Pittsburgh

Michael Bosnjak

Michael Bosnjak

Leibniz Association

Something went wrong. Please try again later.