1995 - Fellow of American Physical Society (APS) Citation For pioneering research in the fundamental properties of amorphous semiconductors, including seminal studies of the intrinsic electronic density of states and metastable mechanisms and processes, and for the application of photothermal deflection spectroscopy to address a wide range of problems in hydrogenated amorphous silicon
Warren B. Jackson mainly investigates Optoelectronics, Amorphous silicon, Dangling bond, Silicon and Doping. His Optoelectronics study integrates concerns from other disciplines, such as Photothermal therapy, Optics and Conductive polymer. His research in the fields of Nanocrystalline silicon overlaps with other disciplines such as Metastability and Impurity.
His Dangling bond research includes elements of Crystallographic defect, Electron mobility, Condensed matter physics and Passivation. Warren B. Jackson has researched Silicon in several fields, including Staebler–Wronski effect, Band gap, Atomic physics and Photoconductivity. Warren B. Jackson combines subjects such as Fermi level, Chemical engineering, Silanes and Analytical chemistry with his study of Doping.
His primary scientific interests are in Optoelectronics, Amorphous silicon, Silicon, Metastability and Analytical chemistry. His Optoelectronics research incorporates themes from Layer, Electrode, Thin-film transistor and Transistor, Voltage. His research in Transistor tackles topics such as Lithography which are related to areas like Nanotechnology.
His research integrates issues of Molecular physics, Annealing, Condensed matter physics and Dangling bond in his study of Amorphous silicon. His research in Dangling bond intersects with topics in Staebler–Wronski effect, Electron paramagnetic resonance, Doping and Atomic physics. His work deals with themes such as Chemical vapor deposition, Amorphous solid, Thin film, Mineralogy and Density of states, which intersect with Silicon.
His main research concerns Optoelectronics, Transistor, Lithography, Artificial intelligence and Roll-to-roll processing. Warren B. Jackson has included themes like Memristor, Electrode, Thin-film transistor, Amorphous solid and Communication channel in his Optoelectronics study. While working in this field, he studies both Transistor and Metastability.
The various areas that Warren B. Jackson examines in his Lithography study include X-ray lithography and Electronics. His studies in Silicon integrate themes in fields like Amorphous silicon, Work, Density of states and Hydrogen bond. His study in Amorphous silicon is interdisciplinary in nature, drawing from both Semimetal, Doping, Chemical physics and Antibonding molecular orbital.
His scientific interests lie mostly in Transistor, Optoelectronics, Nanotechnology, Lithography and Roll-to-roll processing. The study incorporates disciplines such as Thin-film transistor, Annealing, Passivation, Semiconductor and Vacancy defect in addition to Transistor. His Optoelectronics research is multidisciplinary, incorporating perspectives in Voltage, Electronic engineering and Nonlinear system.
His Nonlinear system study integrates concerns from other disciplines, such as Silicon, Quantum tunnelling, Resistive random-access memory and Memory cell. As a part of the same scientific study, Warren B. Jackson usually deals with the Nanotechnology, concentrating on Memristor and frequently concerns with Electrode, Leakage, Poole–Frenkel effect, Crossbar switch and Electric potential. His study looks at the relationship between Lithography and topics such as Backplane, which overlap with Substrate, Flexible electronics, Mechanical engineering and Electronics.
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PHOTOTHERMAL DEFLECTION SPECTROSCOPY AND DETECTION
Warren B. Jackson;Nabil M. Amer;A. C. Boccara;D. Fournier.
Applied Optics (1981)
Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study.
M. Stutzmann;W. B. Jackson;C. C. Tsai.
Physical Review B (1985)
A polymer/semiconductor write-once read-many-times memory
Sven Möller;Craig Perlov;Warren Jackson;Carl Taussig.
Nature (2003)
DIRECT MEASUREMENT OF GAP STATE ABSORPTION IN HYDROGENATED AMORPHOUS SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY
Warren B. Jackson;Nabil M. Amer.
Physical Review B (1982)
Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon.
J. Kakalios;R. A. Street;W. B. Jackson.
Physical Review Letters (1987)
Piezoelectric photoacoustic detection: Theory and experiment
Warren Jackson;Nabil M. Amer.
Journal of Applied Physics (1980)
Sensitive photothermal deflection technique for measuring absorption in optically thin media
A. C. Boccara;D. Fournier;Warren B. Jackson;Nabil M. Amer.
Optics Letters (1980)
Energy dependence of the optical matrix element in hydrogenated amorphous and crystalline silicon.
W. B. Jackson;S. M. Kelso;C. C. Tsai;J. W. Allen.
Physical Review B (1985)
High-performance flexible zinc tin oxide field-effect transistors
W. B. Jackson;R. L. Hoffman;G. S. Herman.
Applied Physics Letters (2005)
Hydrogen diffusion in amorphous silicon
R. A. Street;C. C. Tsai;James Kakalios;W. B. Jackson.
Philosophical Magazine B-physics of Condensed Matter Statistical Mechanics Electronic Optical and Magnetic Properties (1987)
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