World's Best Scientists 2026 revealed!

D-Index & Metrics

Materials Science

D-Index
56
Citations
16020
World Ranking
8138
National Ranking
2007

Research.com Recognitions

  • 1995 - Fellow of American Physical Society (APS) Citation For pioneering research in the fundamental properties of amorphous semiconductors, including seminal studies of the intrinsic electronic density of states and metastable mechanisms and processes, and for the application of photothermal deflection spectroscopy to address a wide range of problems in hydrogenated amorphous silicon

Overview

Warren B. Jackson is affiliated with the Palo Alto Research Center in the United States. Their research contributions span multiple aspects of computer science, particularly focusing on signal processing, computer vision and pattern recognition, and artificial intelligence.

Their work includes significant involvement in topics related to music and audio processing, speech and audio processing, music technology and sound studies, speech recognition and synthesis, generative adversarial networks and image synthesis, Gaussian processes and Bayesian inference, as well as advanced neural network applications.

Warren B. Jackson has published research in venues such as:

  • arXiv (Cornell University)
  • Zenodo (CERN European Organization for Nuclear Research)

Recent papers associated with or contributed to by this researcher are:

  • DDSP-based Singing Vocoders: A New Subtractive-based Synthesizer and A Comprehensive Evaluation, 2022, arXiv (Cornell University)
  • DDSP-based Singing Vocoders: A New Subtractive-based Synthesizer and A Comprehensive Evaluation, 2022, Zenodo (CERN European Organization for Nuclear Research)
  • Error Autocorrelation Objective Function for Improved System Modeling, 2020, arXiv (Cornell University)

Collaborations have included frequent coauthors such as:

  • Wen-Yi Hsiao
  • Furong Yang
  • Scott Bruzenak
  • Yi-Wen Liu
  • Yi-Hsuan Yang

The scholar's award history includes being named a Fellow of the American Physical Society in 1995. The citation for this honor references pioneering research in the fundamental properties of amorphous semiconductors, including studies on intrinsic electronic density of states, metastable mechanisms and processes, and the application of photothermal deflection spectroscopy to hydrogenated amorphous silicon.

Best Publications

  • PHOTOTHERMAL DEFLECTION SPECTROSCOPY AND DETECTION

    Warren B. Jackson;Nabil M. Amer;A. C. Boccara;D. Fournier

  • Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study.

    M. Stutzmann;W. B. Jackson;C. C. Tsai

  • A polymer/semiconductor write-once read-many-times memory

    Sven Möller;Craig Perlov;Warren Jackson;Carl Taussig

  • DIRECT MEASUREMENT OF GAP STATE ABSORPTION IN HYDROGENATED AMORPHOUS SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY

    Warren B. Jackson;Nabil M. Amer

  • Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon.

    J. Kakalios;R. A. Street;W. B. Jackson

  • Piezoelectric photoacoustic detection: Theory and experiment

    Warren Jackson;Nabil M. Amer

  • Sensitive photothermal deflection technique for measuring absorption in optically thin media

    A. C. Boccara;D. Fournier;Warren B. Jackson;Nabil M. Amer

  • Energy dependence of the optical matrix element in hydrogenated amorphous and crystalline silicon.

    W. B. Jackson;S. M. Kelso;C. C. Tsai;J. W. Allen

  • High-performance flexible zinc tin oxide field-effect transistors

    W. B. Jackson;R. L. Hoffman;G. S. Herman

  • Hydrogen diffusion in amorphous silicon

    R. A. Street;C. C. Tsai;James Kakalios;W. B. Jackson

  • Passivation kinetics of two types of defects in polysilicon TFT by plasma hydrogenation

    I.-W. Wu;T.-Y. Huang;W.B. Jackson;A.G. Lewis

  • Density of gap states of silicon grain boundaries determined by optical absorption

    Warren B. Jackson;N. M. Johnson;D. K. Biegelsen

  • Role of hydrogen in the formation of metastable defects in hydrogenated amorphous silicon

    W. B. Jackson;J. M. Marshall;M. D. Moyer

  • Electronic device with recovery layer proximate to active layer

    Warren B. Jackson;Michael Hack

  • An accurate locally active memristor model for S-type negative differential resistance in NbOx

    Gary A. Gibson;Srinitya Musunuru;Jiaming Zhang;Ken Vandenberghe

  • Hydrogen transport in amorphous silicon

    W. B. Jackson;C. C. Tsai

  • Mechanisms of thermal equilibration in doped amorphous silicon

    RA Street;M Hack;WB Jackson

  • Two dimensional object position sensor

    David K. Biegelsen;Bryan T. Preas;Lars-Erik Swartz;Warren B. Jackson

  • Hydrogen passivation of grain boundary defects in polycrystalline silicon thin films

    N. H. Nickel;N. M. Johnson;W. B. Jackson

  • Connection between the Meyer-Neldel relation and multiple-trapping transport.

    W. B. Jackson

Frequent Co-Authors

Robert A. Street
Robert A. Street Palo Alto Research Center
Martin Stutzmann
Martin Stutzmann Technical University of Munich
Tad Hogg
Tad Hogg Xerox (France)
Robert Nemanich
Robert Nemanich Arizona State University
James A. Walker
James A. Walker Harvard University
David K. Biegelsen
David K. Biegelsen Palo Alto Research Center
Shengbai Zhang
Shengbai Zhang Rensselaer Polytechnic Institute
R. Stanley Williams
R. Stanley Williams Texas A&M University
Michael Shur
Michael Shur Rensselaer Polytechnic Institute
Howard M. Branz
Howard M. Branz University of Colorado Boulder

If you think any of the details on this page are incorrect, let us know.

Report an issue

We appreciate your kind effort to assist us to improve this page, it would be helpful providing us with as much detail as possible in the text box below:

Best Scientists Citing Warren B. Jackson

Trending Scientists