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Warren B. Jackson

D-Index & Metrics

Discipline name D-Index World Ranking Current World Ranking National Ranking Current National Ranking Publications Citations
Materials Science 56 8136 7868 2005 1862 241 16020

Warren B. Jackson publications per year

The chart shows the history of publications by Warren B. Jackson between 1967 and 2022, highlighting the no. of papers published in each year and offering an overview of the publication velocity of this scholar. Warren B. Jackson published across 56 years, from 1967 to 2022, averaging 5.4 papers a year. Output peaked at 16 publications in 1998. 2 of the 304 publications appeared in the last two years.

No. of publications
5 10 15
Bar chart. Horizontal axis: year, 1967 to 2022. Vertical axis: number of publications, 0 to 16. Peak 16 publications in 1998. 1967: 1 publication 1968: 1 publication 1969: 0 publications 1970: 0 publications 1971: 0 publications 1972: 0 publications 1973: 0 publications 1974: 0 publications 1975: 0 publications 1976: 0 publications 1977: 0 publications 1978: 0 publications 1979: 0 publications 1980: 2 publications 1981: 7 publications 1982: 4 publications 1983: 11 publications 1984: 6 publications 1985: 11 publications 1986: 9 publications 1987: 12 publications 1988: 7 publications 1989: 11 publications 1990: 10 publications 1991: 15 publications 1992: 9 publications 1993: 12 publications 1994: 5 publications 1995: 7 publications 1996: 10 publications 1997: 4 publications 1998: 16 publications 1999: 9 publications 2000: 4 publications 2001: 8 publications 2002: 6 publications 2003: 11 publications 2004: 8 publications 2005: 15 publications 2006: 8 publications 2007: 8 publications 2008: 8 publications 2009: 4 publications 2010: 6 publications 2011: 7 publications 2012: 4 publications 2013: 2 publications 2014: 6 publications 2015: 1 publication 2016: 2 publications 2017: 0 publications 2018: 1 publication 2019: 4 publications 2020: 10 publications 2021: 0 publications 2022: 2 publications
1967 2022

304 publications in total across all disciplines

View publications per year as a table
Warren B. Jackson: publications per year, 1967 to 2022
Year Publications
1967 1
1968 1
1969 0
1970 0
1971 0
1972 0
1973 0
1974 0
1975 0
1976 0
1977 0
1978 0
1979 0
1980 2
1981 7
1982 4
1983 11
1984 6
1985 11
1986 9
1987 12
1988 7
1989 11
1990 10
1991 15
1992 9
1993 12
1994 5
1995 7
1996 10
1997 4
1998 16
1999 9
2000 4
2001 8
2002 6
2003 11
2004 8
2005 15
2006 8
2007 8
2008 8
2009 4
2010 6
2011 7
2012 4
2013 2
2014 6
2015 1
2016 2
2017 0
2018 1
2019 4
2020 10
2021 0
2022 2
Total 304
Download as CSV

Warren B. Jackson publication distribution in Materials Science in 2026

The chart shows the distribution of publications by all Research.com ranked scientists in the field of Materials Science in 2026. The highlighted bar marks where Warren B. Jackson sits on this spectrum.

No. of scientists
200 400 600 800
Bar chart with 57 bars. Horizontal axis: publications, 50–69 to 1,163+. Vertical axis: number of scientists, 0 to 891. Most scientists, 891, have 190–209 publications. The last bar groups every scientist with 1,163 publications or more. The highlighted bar, 230–249 publications, is where this scientist sits. 50–69 publications: 28 scientists 70–89 publications: 152 scientists 90–109 publications: 356 scientists 110–129 publications: 487 scientists 130–149 publications: 723 scientists 150–169 publications: 835 scientists 170–189 publications: 850 scientists 190–209 publications: 891 scientists 210–229 publications: 862 scientists 230–249 publications: 766 scientists 250–269 publications: 726 scientists 270–289 publications: 665 scientists 290–309 publications: 593 scientists 310–329 publications: 537 scientists 330–349 publications: 477 scientists 350–369 publications: 440 scientists 370–389 publications: 356 scientists 390–409 publications: 321 scientists 410–429 publications: 256 scientists 430–449 publications: 246 scientists 450–469 publications: 216 scientists 470–489 publications: 212 scientists 490–509 publications: 174 scientists 510–529 publications: 194 scientists 530–549 publications: 162 scientists 550–569 publications: 131 scientists 570–589 publications: 111 scientists 590–609 publications: 103 scientists 610–629 publications: 99 scientists 630–649 publications: 77 scientists 650–669 publications: 92 scientists 670–689 publications: 56 scientists 690–709 publications: 53 scientists 710–729 publications: 53 scientists 730–749 publications: 38 scientists 750–769 publications: 52 scientists 770–789 publications: 43 scientists 790–809 publications: 38 scientists 810–829 publications: 34 scientists 830–849 publications: 25 scientists 850–869 publications: 18 scientists 870–889 publications: 20 scientists 890–909 publications: 24 scientists 910–929 publications: 27 scientists 930–949 publications: 20 scientists 950–969 publications: 17 scientists 970–989 publications: 10 scientists 990–1,009 publications: 16 scientists 1,010–1,029 publications: 13 scientists 1,030–1,049 publications: 12 scientists 1,050–1,069 publications: 9 scientists 1,070–1,089 publications: 8 scientists 1,090–1,109 publications: 7 scientists 1,110–1,129 publications: 9 scientists 1,130–1,149 publications: 2 scientists 1,150–1,162 publications: 5 scientists 1,163+ publications: 100 scientists
50–69 publications 1,163+

This scientist: 241 publications — 44th percentile

44% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 1,163 publications or more.

View publications distribution as a table
Number of Materials Science scientists by publication count, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
Publications Scientists This scientist
50–69 28
70–89 152
90–109 356
110–129 487
130–149 723
150–169 835
170–189 850
190–209 891
210–229 862
230–249 766 241
250–269 726
270–289 665
290–309 593
310–329 537
330–349 477
350–369 440
370–389 356
390–409 321
410–429 256
430–449 246
450–469 216
470–489 212
490–509 174
510–529 194
530–549 162
550–569 131
570–589 111
590–609 103
610–629 99
630–649 77
650–669 92
670–689 56
690–709 53
710–729 53
730–749 38
750–769 52
770–789 43
790–809 38
810–829 34
830–849 25
850–869 18
870–889 20
890–909 24
910–929 27
930–949 20
950–969 17
970–989 10
990–1,009 16
1,010–1,029 13
1,030–1,049 12
1,050–1,069 9
1,070–1,089 8
1,090–1,109 7
1,110–1,129 9
1,130–1,149 2
1,150–1,162 5
1,163+ 100
Download as CSV

Warren B. Jackson D-index placement in Materials Science in 2026

The chart shows the D-index (discipline H-index) distribution of Materials Science scientists ranked by Research.com in 2026. The highlighted bar marks where Warren B. Jackson sits on this spectrum.

No. of scientists
200 400 600
Bar chart with 64 bars. Horizontal axis: D-Index, 40–41 to 165+. Vertical axis: number of scientists, 0 to 667. Most scientists, 667, have 52–53 D-Index. The last bar groups every scientist with 165 D-Index or more. The highlighted bar, 56–57 D-Index, is where this scientist sits. 40–41 D-Index: 211 scientists 42–43 D-Index: 450 scientists 44–45 D-Index: 612 scientists 46–47 D-Index: 612 scientists 48–49 D-Index: 598 scientists 50–51 D-Index: 657 scientists 52–53 D-Index: 667 scientists 54–55 D-Index: 621 scientists 56–57 D-Index: 597 scientists 58–59 D-Index: 610 scientists 60–61 D-Index: 587 scientists 62–63 D-Index: 606 scientists 64–65 D-Index: 533 scientists 66–67 D-Index: 490 scientists 68–69 D-Index: 469 scientists 70–71 D-Index: 378 scientists 72–73 D-Index: 421 scientists 74–75 D-Index: 359 scientists 76–77 D-Index: 323 scientists 78–79 D-Index: 299 scientists 80–81 D-Index: 230 scientists 82–83 D-Index: 210 scientists 84–85 D-Index: 195 scientists 86–87 D-Index: 203 scientists 88–89 D-Index: 175 scientists 90–91 D-Index: 175 scientists 92–93 D-Index: 142 scientists 94–95 D-Index: 121 scientists 96–97 D-Index: 117 scientists 98–99 D-Index: 107 scientists 100–101 D-Index: 88 scientists 102–103 D-Index: 85 scientists 104–105 D-Index: 68 scientists 106–107 D-Index: 62 scientists 108–109 D-Index: 57 scientists 110–111 D-Index: 45 scientists 112–113 D-Index: 49 scientists 114–115 D-Index: 50 scientists 116–117 D-Index: 34 scientists 118–119 D-Index: 38 scientists 120–121 D-Index: 37 scientists 122–123 D-Index: 29 scientists 124–125 D-Index: 28 scientists 126–127 D-Index: 24 scientists 128–129 D-Index: 33 scientists 130–131 D-Index: 28 scientists 132–133 D-Index: 21 scientists 134–135 D-Index: 20 scientists 136–137 D-Index: 23 scientists 138–139 D-Index: 17 scientists 140–141 D-Index: 12 scientists 142–143 D-Index: 17 scientists 144–145 D-Index: 21 scientists 146–147 D-Index: 13 scientists 148–149 D-Index: 11 scientists 150–151 D-Index: 14 scientists 152–153 D-Index: 13 scientists 154–155 D-Index: 9 scientists 156–157 D-Index: 10 scientists 158–159 D-Index: 7 scientists 160–161 D-Index: 4 scientists 162–163 D-Index: 4 scientists 164 D-Index: 3 scientists 165+ D-Index: 98 scientists
40–41 D-Index 165+

This scientist: 56 D-Index — 37th percentile

37% of scientists in this discipline score the same or lower.

The last bar groups every scientist with 165 D-Index or more.

View D-Index distribution as a table
Number of Materials Science scientists by D-index, Research.com 2026 ranking edition. Based on 12,847 ranked scientists.
D-Index Scientists This scientist
40–41 211
42–43 450
44–45 612
46–47 612
48–49 598
50–51 657
52–53 667
54–55 621
56–57 597 56
58–59 610
60–61 587
62–63 606
64–65 533
66–67 490
68–69 469
70–71 378
72–73 421
74–75 359
76–77 323
78–79 299
80–81 230
82–83 210
84–85 195
86–87 203
88–89 175
90–91 175
92–93 142
94–95 121
96–97 117
98–99 107
100–101 88
102–103 85
104–105 68
106–107 62
108–109 57
110–111 45
112–113 49
114–115 50
116–117 34
118–119 38
120–121 37
122–123 29
124–125 28
126–127 24
128–129 33
130–131 28
132–133 21
134–135 20
136–137 23
138–139 17
140–141 12
142–143 17
144–145 21
146–147 13
148–149 11
150–151 14
152–153 13
154–155 9
156–157 10
158–159 7
160–161 4
162–163 4
164 3
165+ 98
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Research.com Recognitions

  • 1995 - Fellow of American Physical Society (APS) Citation For pioneering research in the fundamental properties of amorphous semiconductors, including seminal studies of the intrinsic electronic density of states and metastable mechanisms and processes, and for the application of photothermal deflection spectroscopy to address a wide range of problems in hydrogenated amorphous silicon

Overview

Warren B. Jackson is affiliated with the Palo Alto Research Center in the United States. Their research contributions span multiple aspects of computer science, particularly focusing on signal processing, computer vision and pattern recognition, and artificial intelligence.

Their work includes significant involvement in topics related to music and audio processing, speech and audio processing, music technology and sound studies, speech recognition and synthesis, generative adversarial networks and image synthesis, Gaussian processes and Bayesian inference, as well as advanced neural network applications.

Warren B. Jackson has published research in venues such as:

  • arXiv (Cornell University)
  • Zenodo (CERN European Organization for Nuclear Research)

Recent papers associated with or contributed to by this researcher are:

  • DDSP-based Singing Vocoders: A New Subtractive-based Synthesizer and A Comprehensive Evaluation, 2022, arXiv (Cornell University)
  • DDSP-based Singing Vocoders: A New Subtractive-based Synthesizer and A Comprehensive Evaluation, 2022, Zenodo (CERN European Organization for Nuclear Research)
  • Error Autocorrelation Objective Function for Improved System Modeling, 2020, arXiv (Cornell University)

Collaborations have included frequent coauthors such as:

  • Wen-Yi Hsiao
  • Furong Yang
  • Scott Bruzenak
  • Yi-Wen Liu
  • Yi-Hsuan Yang

The scholar's award history includes being named a Fellow of the American Physical Society in 1995. The citation for this honor references pioneering research in the fundamental properties of amorphous semiconductors, including studies on intrinsic electronic density of states, metastable mechanisms and processes, and the application of photothermal deflection spectroscopy to hydrogenated amorphous silicon.

Best Publications

  • PHOTOTHERMAL DEFLECTION SPECTROSCOPY AND DETECTION

    Warren B. Jackson;Nabil M. Amer;A. C. Boccara;D. Fournier

  • Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study.

    M. Stutzmann;W. B. Jackson;C. C. Tsai

  • A polymer/semiconductor write-once read-many-times memory

    Sven Möller;Craig Perlov;Warren Jackson;Carl Taussig

  • DIRECT MEASUREMENT OF GAP STATE ABSORPTION IN HYDROGENATED AMORPHOUS SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY

    Warren B. Jackson;Nabil M. Amer

  • Stretched-exponential relaxation arising from dispersive diffusion of hydrogen in amorphous silicon.

    J. Kakalios;R. A. Street;W. B. Jackson

  • Piezoelectric photoacoustic detection: Theory and experiment

    Warren Jackson;Nabil M. Amer

  • Sensitive photothermal deflection technique for measuring absorption in optically thin media

    A. C. Boccara;D. Fournier;Warren B. Jackson;Nabil M. Amer

  • Energy dependence of the optical matrix element in hydrogenated amorphous and crystalline silicon.

    W. B. Jackson;S. M. Kelso;C. C. Tsai;J. W. Allen

  • High-performance flexible zinc tin oxide field-effect transistors

    W. B. Jackson;R. L. Hoffman;G. S. Herman

  • Hydrogen diffusion in amorphous silicon

    R. A. Street;C. C. Tsai;James Kakalios;W. B. Jackson

  • Passivation kinetics of two types of defects in polysilicon TFT by plasma hydrogenation

    I.-W. Wu;T.-Y. Huang;W.B. Jackson;A.G. Lewis

  • Density of gap states of silicon grain boundaries determined by optical absorption

    Warren B. Jackson;N. M. Johnson;D. K. Biegelsen

  • Role of hydrogen in the formation of metastable defects in hydrogenated amorphous silicon

    W. B. Jackson;J. M. Marshall;M. D. Moyer

  • Electronic device with recovery layer proximate to active layer

    Warren B. Jackson;Michael Hack

  • An accurate locally active memristor model for S-type negative differential resistance in NbOx

    Gary A. Gibson;Srinitya Musunuru;Jiaming Zhang;Ken Vandenberghe

  • Hydrogen transport in amorphous silicon

    W. B. Jackson;C. C. Tsai

  • Mechanisms of thermal equilibration in doped amorphous silicon

    RA Street;M Hack;WB Jackson

  • Two dimensional object position sensor

    David K. Biegelsen;Bryan T. Preas;Lars-Erik Swartz;Warren B. Jackson

  • Hydrogen passivation of grain boundary defects in polycrystalline silicon thin films

    N. H. Nickel;N. M. Johnson;W. B. Jackson

  • Connection between the Meyer-Neldel relation and multiple-trapping transport.

    W. B. Jackson

Frequent Co-Authors

Robert A. Street
Robert A. Street Palo Alto Research Center
Martin Stutzmann
Martin Stutzmann Technical University of Munich
Tad Hogg
Tad Hogg Xerox (France)
Robert Nemanich
Robert Nemanich Arizona State University
James A. Walker
James A. Walker Harvard University
David K. Biegelsen
David K. Biegelsen Palo Alto Research Center
Shengbai Zhang
Shengbai Zhang Rensselaer Polytechnic Institute
R. Stanley Williams
R. Stanley Williams Texas A&M University
Michael Shur
Michael Shur Rensselaer Polytechnic Institute
Howard M. Branz
Howard M. Branz University of Colorado Boulder

External Links

Personal website of Warren B. Jackson Google Scholar page

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