2026 Robert Nemanich: Materials Science Researcher – H-Index, Publications & Awards

Discipline name	D-Index	World Ranking	Current World Ranking	National Ranking	Current National Ranking	Publications	Citations
Materials Science	89	1754	1688	536	501	726	33395

Discipline name

D-Index

World Ranking

Current World Ranking

National Ranking

Current National Ranking

Publications

Citations

Materials Science

1754

1688

536

501

726

33395

Research.com Recognitions

2009 - Fellow of the Materials Research Society
1993 - Fellow of American Physical Society (APS) Citation For his contributions to the application of Raman spectroscopy to the study of atomic structure is semiconducting thin films and interfaces

Overview

Robert Nemanich is affiliated with Arizona State University in the United States. Their research primarily spans the fields of engineering and materials science, with a particular focus on electrical and electronic engineering and materials chemistry as subfields. Their work also engages condensed matter physics, electronic, optical and magnetic materials, and mechanics of materials.

The main topics of Robert Nemanich's research include semiconductor materials and devices, diamond and carbon-based materials research, and GaN-based semiconductor devices and materials. Additional areas of interest include Ga2O3 and related materials, metal and thin film mechanics, advancements in semiconductor devices and circuit design, and the electronic and structural properties of oxides.

Some of their recent published papers are:

Electronic Conductance Resonance in Non-Redox-Active Proteins, 2020, Journal of the American Chemical Society
Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress, 2021, Materials Today
The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices, 2021, Applied Physics Letters
Schottky Barrier Height Analysis of Diamond SPIND Using High Temperature Operation up to 873 K, 2020, IEEE Journal of the Electron Devices Society
AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric, 2021, Applied Physics Letters

The venues where Robert Nemanich frequently publishes include Applied Physics Letters, Diamond and Related Materials, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, IEEE Transactions on Electron Devices, and MRS Communications.

The scientist has collaborated extensively with various frequent coauthors such as Franz A. Koeck, Stephen M. Goodnick, David J. Smith, Yuji Zhao, and Harshad Surdi.

Honors received by Robert Nemanich include the Fellowship of the Materials Research Society awarded in 2009, and the Fellowship of the American Physical Society in 1993, with the latter recognizing contributions to the application of Raman spectroscopy in studying the atomic structure of semiconducting thin films and interfaces.

Best Publications

First- and second-order Raman scattering from finite-size crystals of graphite

R. J. Nemanich;S. A. Solin

2659
Citations
Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

J. Y. Tsao;S. Chowdhury;M. A. Hollis;D. Jena

1496
Citations
Structural interpretation of the vibrational spectra of a-Si: H alloys

G. Lucovsky;R. J. Nemanich;J. C. Knights

1037
Citations
Multi-walled carbon nanotube interactions with human epidermal keratinocytes.

Nancy A. Monteiro-Riviere;Robert J. Nemanich;Alfred O. Inman;Yunyu Y. Wang

1021
Citations
Raman scattering characterization of carbon bonding in diamond and diamondlike thin films

R. J. Nemanich;J. T. Glass;G. Lucovsky;R. E. Shroder

932
Citations
Raman spectroscopy of diamond and doped diamond.

Steven Prawer;Robert J. Nemanich

777
Citations
Light scattering study of boron nitride microcrystals

R. J. Nemanich;S. A. Solin;Richard M. Martin

736
Citations
Analysis of the composite structures in diamond thin films by Raman spectroscopy.

R. E. Shroder;R. J. Nemanich;J. T. Glass

719
Citations
Defects in single-crystal silicon induced by hydrogenation

N. M. P Johnson;F. A. Ponce;R. A. Street;R. J. Nemanich

609
Citations
NEGATIVE-ELECTRON-AFFINITY EFFECTS ON THE DIAMOND (100) SURFACE

J. van der Weide;Z. Zhang;P. K. Baumann;M. G. Wensell

510
Citations
Cleaning of AlN and GaN surfaces

S. W. King;J. P. Barnak;M. D. Bremser;K. M. Tracy

409
Citations
Gold Schottky contacts on oxygen plasma-treated, n-type ZnO(0001̄)

B. J. Coppa;R. F. Davis;R. J. Nemanich

404
Citations
Piezoelectric measurements with atomic force microscopy

J. A. Christman;R. R. Woolcott;Angus I. Kingon;Robert Nemanich

372
Citations
Piezoelectric Measurements with Atomic Force Microscopy

J. A. Christman;H. Maiwa;S.-H. Kim;A. I. Kingon

356
Citations
Infrared active optical vibrations of graphite

R.J. Nemanich;G. Lucovsky;S.A. Solin

351
Citations
Defects in plasma-deposited a-Si: H

J.C. Knights;G. Lucovsky;R.J. Nemanich

298
Citations
Morphology and phase stability of TiSi2 on Si

Hyeongtag Jeon;C. A. Sukow;J. W. Honeycutt;G. A. Rozgonyi

298
Citations
Thermally induced effects in evaporated chalcogenide films. I. Structure

R. J. Nemanich;G. A. N. Connell;T. M. Hayes;R. A. Street

296
Citations
Mechanical stress effect on imprint behavior of integrated ferroelectric capacitors

Alexei Gruverman;B. J. Rodriguez;A. I. Kingon;R. J. Nemanich

290
Citations
Direct studies of domain switching dynamics in thin film ferroelectric capacitors

Alexei Gruverman;B. J. Rodriguez;C. Dehoff;C. Dehoff;J. D. Waldrep

290
Citations